LT3800
18
3800f
Effective grounding can be achieved by considering switch
current in the ground plane, and the return current paths
of each respective bypass capacitor. The V
IN
bypass
return, V
CC
bypass return, and the source of the synchro-
nous FET carry PGND currents. SGND originates at the
negative terminal of the V
OUT
bypass capacitor, and is the
small signal reference for the LT3800.
Don’t be tempted to run small traces to separate ground
paths. A good ground plane is important as always, but
PGND referred bypass elements must be oriented such
that transient currents in these return paths do not
corrupt the SGND reference.
During the dead-time between switch conduction, the
body diode of the synchronous FET conducts inductor
current. Commutating this diode requires a significant
charge contribution from the main switch. At the instant
the body diode commutates, a current discontinuity is
created and parasitic inductance causes the switch node
to fly up in response to this discontinuity. High currents
and excessive parasitic inductance can generate extremely
fast dV/dt rise times. This phenomenon can cause
avalanche breakdown in the synchronous FET body di-
ode, significant inductive overshoot on the switch node,
and shoot-through currents via parasitic turn-on of the
synchronous FET. Layout practices and component ori-
entations that minimize parasitic inductance on this node
is critical for reducing these effects.
Ringing waveforms in a converter circuit can lead to
device failure, excessive EMI, or instability. In many cases,
you can damp a ringing waveform with a series RC
network across the offending device. In LT3800 applica-
tions, any ringing will typically occur on the switch node,
which can usually be reduced by placing a snubber across
the synchronous FET. Use of a snubber network, however,
should be considered a last resort. Effective layout prac-
tices typically reduce ringing and overshoot, and will
eliminate the need for such solutions.
Effective grounding techniques are critical for successful
DC/DC converter layouts. Orient power path components
such that current paths in the ground plane do not cross
through signal ground areas. Signal ground refers to the
Exposed Pad on the backside of the LT3800 IC. SGND is
referenced to the (–) terminal of the V
OUT
decoupling
capacitor and is used as the converter voltage feedback
reference. Power ground currents are controlled on the
LT3800 via the PGND pin, and this ground references the
high current synchronous switch drive components, as
well as the local V
CC
supply. It is important to keep PGND
and SGND voltages consistent with each other, so sepa-
rating these grounds with thin traces is not recommended.
When the synchronous FET is turned on, gate drive surge
currents return to the LT3800 PGND pin from the FET
source. The BOOST supply refresh surge currents also
return through this same path. The synchronous FET must
be oriented such that these PGND return currents do not
corrupt the SGND reference. Problems caused by the
PGND return path are generally recognized during heavy
load conditions, and are typically evidenced as multiple
switch pulses occurring during a single 5µs switch cycle.
This behavior indicates that SGND is being corrupted and
grounding should be improved. SGND corruption can
often be eliminated, however, by adding a small capacitor
(100pF-200pF) across the synchronous switch FET from
drain to source.
The high di/dt loop formed by the switch MOSFETs and the
input capacitor (C
IN
) should have short wide traces to
minimize high frequency noise and voltage stress from
inductive ringing. Surface mount components are pre-
ferred to reduce parasitic inductances from component
leads. Connect the drain of the main switch MOSFET
directly to the (+) plate of C
IN
, and connect the source of
the synchronous switch MOSFET directly to the (–) termi-
nal of C
IN
. This capacitor provides the AC current to the
switch MOSFETs. Switch path currents can be controlled
by orienting switch FETs, the switched inductor, and input
and output decoupling capacitors in close proximity to
each other.
Locate the V
CC
and BOOST decoupling capacitors in close
proximity to the IC. These capacitors carry the MOSFET
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