DMG6602SVTQ-7 - DIODES INC - Datasheet.Directory

DMG6602SVTQ

Document number: DS37643 Rev. 1 - 2

1 of 10

www.diodes.com

December 2014

DMG6602SVTQ

ADVANCE INFO R MA T I O N

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Product Summary

Device

V(BR)DSS

RDS(on)

ID

TA = +25°C

Q1

30V

60mΩ @ VGS = 10V

3.4A

100mΩ @ VGS = 4.5V

2.7A

Q2

-30V

95mΩ @ VGS = -10V

-2.8A

140mΩ @ VGS = -4.5V

-2.3A

Description and Applications

This new generation MOSFET is designed to minimize the on-state

resistance (RDS(on)) and yet maintain superior switching performance,

making it ideal for high efficiency power management applications.

 Backlighting

 DC-DC Converters

 Power Management Functions

Features and Benefits

 Low On-Resistance

 Low Input Capacitance

 Fast Switching Speed

 Low Input/Output Leakage

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

 PPAP Capable (Note 4)

Mechanical Data

 Case: TSOT26

 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals Connections: See Diagram

 Terminals: Finish – Matte Tin Annealed over Copper Leadframe.

Solderable per MIL-STD-202, Method 208

 Weight: 0.013 grams (Approximate)

Ordering Information (Note 5)

Part Number

Case

Packaging

DMG6602SVTQ-7

TSOT26

3,000 / Tape & Reel

DMG6602SVTQ-13

TSOT26

10,000 / Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally

the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year

2010

2011

2012

2013

2014

2015

2016

2017

2018

2019

2020

Code

X

Y

Z

A

B

C

D

E

F

G

H

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

1

2

3

4

5

6

7

8

9

O

N

D

TSOT26

Top View

1

2

3

6

5

4

D1

S1

D2

G1

S2

G2

N-Channel

P-Channel

D1

S1

G1

Q1 D2

S2

G2

Q2

66C = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: X = 2010)

M = Month (ex: 9 = September)

66C

YM

DMG6602SVTQ

Document number: DS37643 Rev. 1 - 2

2 of 10

www.diodes.com

December 2014

DMG6602SVTQ

ADVANCE INFO R MA T I O N

Maximum Ratings – Q1 (@TA = +25°C unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

30

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current (Note 7) VGS = 10V

Steady

State

TA = +25°C

TA = +70°C

ID

3.4

2.7

A

Continuous Drain Current (Note 7) VGS = 4.5V

Steady

State

TA = +25°C

TA = +70°C

ID

2.7

2.2

A

Maximum Continuous Body Diode Forward Current (Note 5)

IS

1.5

A

Pulsed Drain Current (Note 5)

IDM

25

A

Maximum Ratings – Q2 (@TA = +25°C unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

-30

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current (Note 7) VGS = -10V

Steady

State

TA = +25°C

TA = +70°C

ID

-2.8

-2.4

A

Continuous Drain Current (Note 7) VGS = -4.5V

Steady

State

TA = +25°C

TA = +70°C

ID

-2.3

-2.1

A

Maximum Continuous Body Diode Forward Current (Note 7)

IS

-1.5

A

Pulsed Drain Current (Note 7)

ID

-20

A

Thermal Characteristics

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 6)

TA = +25°C

PD

0.84

W

TA = +70°C

0.52

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RJA

155

°C/W

t<10s

109

Total Power Dissipation (Note 7)

TA = +25°C

PD

1.27

W

TA = +70°C

0.8

Thermal Resistance, Junction to Ambient (Note 7)

Steady State

RJA

102

°C/W

t<10s

71

Thermal Resistance, Junction to Case (Note 7)

RJC

34

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

DMG6602SVTQ

Document number: DS37643 Rev. 1 - 2

3 of 10

www.diodes.com

December 2014

DMG6602SVTQ

ADVANCE INFO R MA T I O N

Electrical Characteristics – Q1 NMOS (@ TA = +25°C unless otherwise stated.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

30

-

V

VGS = 0V, ID = 250µA

Zero Gate Voltage Drain Current

IDSS

-

1.0

µA

VDS = 24V, VGS = 0V

Gate-Source Leakage

IGSS

-

±100

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(th)

1.0

-

2.3

V

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS (ON)

-

38

55

60

100

mΩ

VGS = 10V, ID = 3.1A

VGS = 4.5V, ID = 2A

Forward Transfer Admittance

|Yfs|

-

4

-

S

VDS = 5V, ID = 3.1A

Diode Forward Voltage

VSD

-

0.8

1

V

VGS = 0V, IS = 1A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss

-

290

400

pF

VDS = 15V, VGS = 0V,

f = 1.2MHz

Output Capacitance

Coss

-

40

80

Reverse Transfer Capacitance

Crss

-

40

80

Gate Resistance

Rg

-

1.4

-

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 4.5V)

Qg

-

4

6

nC

VDS = 15V, VGS = 4.5V, ID = 3.1A

Total Gate Charge (VGS = 10V)

Qg

-

9

13

VDS = 15V, VGS = 10V, ID = 3A

Gate-Source Charge

Qgs

-

1.2

-

Gate-Drain Charge

Qgd

-

1.5

-

Turn-On Delay Time

tD(on)

-

3

-

ns

VGS = 10V, VDS = 15V,

RG = 3Ω, RL = 4.7Ω

Turn-On Rise Time

tr

-

5

-

Turn-Off Delay Time

tD(off)

-

13

-

Turn-Off Fall Time

tf

-

3

-

Notes: 8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

V , DRAIN -SOURCE VOLTAGE(V)

Fig. 1 Typical Output Characteristics

DS

I , DRAIN CURRENT (A)

D

0.0

2.0

4.0

6.0

8.0

10.0

V , GATE SOURCE VOLTAGE(V)

Fig. 2 Typical Transfer Characteristics

GS

I , DRAIN CURRENT (A)

D

0

2

4

6

8

10

0 1 2 3 4 5

V = 5.0V

DS

DMG6602SVTQ

Document number: DS37643 Rev. 1 - 2

4 of 10

www.diodes.com

December 2014

DMG6602SVTQ

ADVANCE INFO R MA T I O N

I , DRAIN SOURCE CURRENT

Fig. 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

D

R ,DRAIN-SOURCE ON-RESISTANCE( )

DS(ON) 

0.01

0.1

1

0 4 8 12 16 20

R ( ) Ave @ V =4.5V

DS(ON) G



R ( ) Ave @ V =10V

DS(ON) G



I , DRAIN SOURCE CURRENT (A)

Fig. 4 Typical On-Resistance vs.

Drain Current and Temperature

D

R , DRAIN-SOURCE ON-RESISTANCE( )

DS(ON) 

0

0.04

0.08

0.12

0.16

0 2 4 6 8 10

V = 4.5V

GS

Ave R ( ) @ 150°C

DS(ON) 

Ave R ( ) @ -55°C

DS(ON) 

Ave R ( ) @ 25°C

DS(ON) 

Ave R ( ) @ 85°C

DS(ON) 

Ave R ( ) @ 125°C

DS(ON) 

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE ( C)

J

Fig. 5 On-Resistance Variation with Temperature

R , DRAIN-SOURCE ON-RESISTANCE

(Normalized)

DS(ON)

0.6

0.8

1

1.2

1.4

1.6

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE ( C)

J

Fig. 6 On-Resistance Variation with Temperature

R , DRAIN-SOURCE ON-RESISTANCE

DS(ON)

0

0.02

0.04

0.06

0.08

0.1

0

0.4

0.8

1.6

1.2

2.4

-50 -25 0 25 50 75 100 125 150

V , GATE THRESHOLD VOLTAGE (V)

GS(th)

T , JUNCTION TEMPERATURE ( C)

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

J

I = 250 A

D

I = 1mA

D

2.0

I , SOURCE CURRENT (A)

S

0 0.2 0.4 0.6 0.8 1.0 1.2

V , SOURCE-DRAIN VOLTAGE (V)

Fig. 8 Diode Forward Voltage vs. Current

SD

0

2

4

6

8

10

V (V) @ V =0V T = 25 C

SD DS A 

DMG6602SVTQ

Document number: DS37643 Rev. 1 - 2

5 of 10

www.diodes.com

December 2014

DMG6602SVTQ

ADVANCE INFO R MA T I O N

f = 1MHz

V , DRAIN-SOURCE VOLTAGE (V)

Fig. 9 Typical Junction Capacitance

DS

C , JUNCTION CAPACITANCE (pF)

T

C Ave (pF)

RSS

10

100

1000

0 5 10 15 20 25 30

C Ave (pF)

ISS

C Ave (pF)

OSS

0

2

4

6

8

10

0 2 4 6 8 10

V = 10V

I = 3.0A

DS

D

Q (nC)

g, TOTAL GATE CHARGE

Fig. 10 Gate Charge

V GATE THRESHOLD VOLTAGE (V)

GS

0.1 1 10 100

V , DRAIN-SOURCE VOLTAGE (V)

Fig. 11 SOA, Safe Operation Area

DS

0.01

0.1

1

10

100

I , DRAIN CURRENT (A)

D

R

Limited

DS(on)

T = 150°C

T = 25°C

J(max)

A

V = 10V

Single Pulse

GS

DUT on 1 * MRP Board

DC

P = 10s

WP = 1s

W

P = 100ms

WP = 10ms

W P = 1ms

W

P = 100µs

W

DMG6602SVTQ

Document number: DS37643 Rev. 1 - 2

6 of 10

www.diodes.com

December 2014

DMG6602SVTQ

ADVANCE INFO R MA T I O N

Electrical Characteristics – Q2 PMOS (@ TA = +25°C unless otherwise stated.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

-30

-

V

VGS = 0V, ID = -250µA

Zero Gate Voltage Drain Current

IDSS

-

-1.0

µA

VDS = -24V, VGS = 0V

Gate-Source Leakage

IGSS

-

±100

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(th)

-1.0

-

-2.3

V

VDS = VGS, ID = -250μA

Static Drain-Source On-Resistance

RDS (ON)

-

73

99

95

140

mΩ

VGS = -10V, ID = -2.7A

VGS = -4.5V, ID = -2A

Forward Transfer Admittance

|Yfs|

-

6

-

S

VDS = -5V, ID = -2.7A

Diode Forward Voltage

VSD

-

-0.8

-1.0

V

VGS = 0V, IS = -1A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss

-

350

420

pF

VDS = -15V, VGS = 0V,

f = 1.2MHz

Output Capacitance

Coss

-

50

100

Reverse Transfer Capacitance

Crss

-

45

80

Gate Resistance

Rg

-

17.1

-

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = -4.5V)

Qg

-

4

6

nC

VDS = -15V, VGS = -4.5V, ID = -3A

Total Gate Charge (VGS = -10V)

Qg

-

7

9

VDS = -15V, VGS = -10V, ID = -3A

Gate-Source Charge

Qgs

-

0.9

-

Gate-Drain Charge

Qgd

-

1.2

-

Turn-On Delay Time

tD(on)

-

4.8

-

ns

VGS = -10V, VDS = -15V,

RG = 6Ω, RL = 15Ω

Turn-On Rise Time

tr

-

7.3

-

Turn-Off Delay Time

tD(off)

-

20

-

Turn-Off Fall Time

tf

-

13

-

Notes: 8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to production testing.

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

V , DRAIN -SOURCE VOLTAGE(V)

Fig. 12 Typical Output Characteristics

DS

0.0

2.0

4.0

6.0

8.0

I , DRAIN CURRENT

D

V , GATE SOURCE VOLTAGE(V)

Fig. 13 Typical Transfer Characteristics

GS

I , DRAIN CURRENT (A)

D

0

2

4

6

8

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

DMG6602SVTQ

Document number: DS37643 Rev. 1 - 2

7 of 10

www.diodes.com

December 2014

DMG6602SVTQ

ADVANCE INFO R MA T I O N

I , DRAIN SOURCE CURRENT

Fig. 14 Typical On-Resistance vs.

Drain Current and Gate Voltage

D

R ,DRAIN-SOURCE ON-RESISTANCE( )

DS(ON) 

0

0.05

0.1

0.15

0.2

0.25

0.3

0.35

0.4

0 2

R ( ) Ave @ V =2.5V

DS(ON) G



R ( ) Ave @ V =4.5V

DS(ON) G



R ( ) Ave @ V =10V

DS(ON) G



4 86

0 2 4 6 8

I , DRAIN SOURCE CURRENT (A)

Fig. 15 Typical On-Resistance vs.

Drain Current and Temperature

D

R , DRAIN-SOURCE ON-RESISTANCE( )

DS(ON) 

V = 4.5V

GS

0

0.04

0.08

0.12

0.16

0.2

Ave R ( ) @ 150°C

DS(ON) 

Ave R ( ) @ -55°C

DS(ON) 

Ave R ( ) @ 25°C

DS(ON) 

Ave R ( ) @ 85°C

DS(ON) 

Ave R ( ) @ 125°C

DS(ON) 

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE ( C)

J

Fig. 16 On-Resistance Variation with Temperature

R , DRAIN-SOURCE ON-RESISTANCE

(Normalized)

DS(ON)

0.6

0.8

1

1.2

1.4

1.6

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE ( C)

J

Fig. 17 On-Resistance Variation with Temperature

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON) 

0

0.04

0.08

0.12

0.16

0.2

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE ( C)

J

Fig. 18 Gate Threshold Variation vs. Ambient Temperature

0

0.4

0.8

1.2

1.6

2

V , GATE THRESHOLD VOLTAGE (V)

GS(TH)

V , SOURCE -DRAIN VOLTAGE (V)

SD

Fig. 19 Diode Forward Voltage vs. Current

I , SOURCE CURRENT (V)

S

0

2

4

6

8

0 0.2 0.4 0.6 0.8 1 1.2 1.4

DMG6602SVTQ

Document number: DS37643 Rev. 1 - 2

8 of 10

www.diodes.com

December 2014

DMG6602SVTQ

ADVANCE INFO R MA T I O N

-V , DRAIN-SOURCE VOLTAGE (V)

Fig. 20 Typical Junction Capacitance

DS

C , JUNCTION CAPACITANCE (pF)

T

10

100

1000

0 5 10 15 20 25 30

f = 1MHz

C Ave(pF)

ISS

C Ave(pF)

OSS

C Ave(pF)

RSS

0

2

4

6

8

10

0 2 4 6 8 10

V = -15

I = -3A

DS

D

Q (nC)

g, TOTAL GATE CHARGE

Fig. 21 Gate Charge

-V GATE THRESHOLD VOLTAGE (V)

GS

0.1 1 10 100

-V , DRAIN-SOURCE VOLTAGE (V)

Fig. 22 SOA, Safe Operation Area

DS

0.01

0.1

1

10

100

-I , DRAIN CURRENT (A)

D

R

Limited

DS(on)

T = 150°C

T = 25°C

J(max)

A

V = -10V

Single Pulse

GS

DUT on 1 * MRP Board

DC

P = 10s

WP = 1s

W

P = 100ms

WP = 10ms

W P = 1ms

W

P = 100µs

W

0.001

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

t1, PULSE DURATION TIME (sec)

Fig. 23 Transient Thermal Resistance

r(t), TRANSIENT THERMAL RESISTANCE

D = 0.9

D = 0.7

D = 0.5

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

Single Pulse

R (t) = r(t) * R

R = 164C/W

Duty Cycle, D = t1/ t2

JA

JA JA

DMG6602SVTQ

Document number: DS37643 Rev. 1 - 2

9 of 10

www.diodes.com

December 2014

DMG6602SVTQ

ADVANCE INFO R MA T I O N

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

TSOT26

Dim

Min

Max

Typ

A



1.00



A1

0.01

0.10



A2

0.84

0.90



D



2.90

E



2.80

E1



1.60

b

0.30

0.45



c

0.12

0.20



e



0.95

e1



1.90

L

0.30

0.50

L2



0.25

θ

0°

8°

4°

θ1

4°

12°



All Dimensions in mm

Dimensions

Value (in mm)

C

0.950

X

0.700

Y

1.000

Y1

3.199

Y1

C C

X (6x)

Y (6x)

c

A1

L

E1 E

A2

D

e1

e6x b



4x 1

L2

A

DMG6602SVTQ

Document number: DS37643 Rev. 1 - 2

10 of 10

www.diodes.com

December 2014

DMG6602SVTQ

ADVANCE INFO R MA T I O N

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for

use provided in the labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com