Preliminary Technical Information IXTH180N10T IXTQ180N10T TrenchMVTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated = 100 V = 180 A 6.4 m TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25 C to 175 C TJ = 25 C to 175 C; RGS = 1 M 100 100 V V VGSM Transient 30 V ID25 ILRMS IDM TC = 25 C Lead Current Limit, RMS TC = 25 C, pulse width limited by TJM 180 75 450 A A A IAR E AS TC = 25 C TC = 25 C 25 750 A mJ dv/dt IS IDM, di/dt 100 A/s, VDD VDSS TJ 175 C, RG = 3.3 3 V/ns PD TC = 25 C 480 W -55 ... +175 175 -55 ... +175 C C C 300 260 C C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Md Mounting torque Weight TO-3P TO-247 1.13 / 10 Nm/lb.in. 5.5 6 Symbol Test Conditions (TJ = 25 C unless otherwise specified) g g Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 A 100 VGS(th) VDS = VGS, ID = 250 A 2.5 IGSS VGS = 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 25 A, Notes 1, 2 V TJ = 150 C (c) 2006 IXYS CORPORATION All rights reserved 5.4 4.5 V 200 nA 5 250 A A 6.4 m G D (TAB) S TO-3P (IXTQ) G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems Distributed Power Architechtures and VRMs Electronic Valve Train Systems High Current Switching Applications High Voltage Synchronous Recifier DS99712 (11/06) IXTH180N10T IXTQ180N10T Symbol Test Conditions Characteristic Values (TJ = 25 C unless otherwise specified) gfs VDS= 10 V; ID = 60 A, Note 1 Typ. 70 110 S 6900 pF Ciss Coss TO-247AD Outline Min. VGS = 0 V, VDS = 25 V, f = 1 MHz Crss Max. 923 pF 162 pF 33 ns td(on) Resistive Switching Times tr VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A 54 ns td(off) RG = 3.3 (External) 42 ns 31 ns 151 nC 39 nC 45 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A Qgd 1 RthCS Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Source-Drain Diode Symbol Test Conditions TJ = 25 C unless otherwise specified) Min. Characteristic Values Typ. Max. IS VGS = 0 V 180 A ISM Pulse width limited by TJM 450 A VSD IF = 25 A, VGS = 0 V, Note 1 0.95 V t rr IF = 25 A, -di/dt = 100 A/s 100 ns 2 - Drain Tab - Drain Dim. C/W 0.25 3 Terminals: 1 - Gate 3 - Source 0.31 C/W RthJC 2 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-3P (IXTQ) Outline VR = 50 V, VGS = 0 V Notes: 1. Pulse test, t 300 s, duty cycle d 2 %; 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5 mm or less from the package body. Pins: PRELIMINARY TECHNICAL INFORMATION 1 - Gate 3 - Source 2 - Drain 4, TAB - Drain The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a preproduction design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 7,005,734 B2 7,063,975 B2 7,071,537 IXTH180N10T IXTQ180N10T Fig. 1. Output Characteristics @ 25C Fig. 2. Extended Output Characteristics @ 25C 300 180 VGS = 10V 9V 8V 160 250 140 225 120 100 ID - Amperes ID - Amperes VGS = 10V 9V 8V 275 7V 80 200 175 150 7V 125 100 60 6V 75 40 50 20 6V 25 0 0 0 0.2 0.4 0.6 0.8 1 0 1.2 1 2 3 Fig. 3. Output Characteristics @ 150C 2.6 7 VGS = 10V 2.4 RDS(on) - Normalized 140 I D - Amperes 6 2.8 VGS = 10V 9V 8V 120 7V 100 80 5 Fig. 4. RDS(on) Normalized to ID = 90A Value vs. Junction Temperature 180 160 4 VDS - Volts VDS - Volts 6V 60 2.2 2 I D = 180A 1.8 1.6 I D = 90A 1.4 1.2 1 40 0.8 20 0.6 5V 0 0.4 0 0.4 0.8 1.2 1.6 2 2.4 2.8 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 90A Value vs. Drain Current 50 75 100 125 150 175 Fig. 6. Drain Current vs. Case Temperature 3 140 External Lead Current Limit for TO-263 (7-Lead) 2.8 2.6 120 TJ = 175C 2.4 100 2.2 I D - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade 2 VGS = 10V 15V - - - - 1.8 1.6 1.4 60 40 TJ = 25C 1.2 External Lead Current Limit for TO-3P, TO-220, & TO-263 80 1 20 0.8 0 0.6 0 50 100 150 200 I D - Amperes (c) 2006 IXYS CORPORATION All rights reserved 250 300 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTH180N10T IXTQ180N10T Fig. 8. Transconductance 150 200 135 175 120 150 g f s - Siemens ID - Amperes Fig. 7. Input Admittance 225 125 100 TJ = 150C 25C - 40C 75 50 TJ = - 40C 25C 105 90 75 150C 60 45 30 25 15 0 0 3.5 4 4.5 5 5.5 6 6.5 7 7.5 0 25 50 75 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 125 150 175 200 225 250 Fig. 10. Gate Charge 275 10 250 9 225 VDS = 50V I D = 25A 8 200 I G = 10mA 7 175 VGS - Volts I S - Amperes 100 I D - Amperes 150 125 100 6 5 4 3 75 TJ = 150C 50 2 25 1 TJ = 25C 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 20 40 VSD - Volts 60 80 100 120 140 160 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 10,000 1.00 Capacitance - PicoFarads Z(th)JC - C / W Ciss f = 1 MHz C oss 1,000 0.10 C rss 100 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Second 1 10 IXTH180N10T IXTQ180N10T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 70 65 RG = 3.3 65 60 VGS = 10V 60 55 VDS = 50V 55 t r - Nanoseconds t r - Nanoseconds 70 50 45 40 I D = 50A 35 30 I D = 25A 25 TJ = 25C 50 45 RG = 3.3 40 VGS = 10V 35 VDS = 50V 30 25 20 20 15 15 10 TJ = 125C 10 25 35 45 55 65 75 85 95 105 115 125 24 26 28 30 32 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 75 60 100 55 50 I D = 25A 33 49 32 46 35 31 30 30 16 18 58 52 20 14 20 25 35 45 55 37 61 115 40 125 td(off) - - - - 55 RG = 3.3, VGS = 10V VDS = 50V 52 33 49 32 46 TJ = 25C 31 30 40 45 I D - Amperes (c) 2006 IXYS CORPORATION All rights reserved 50 220 120 190 100 160 25A < I D < 50A 80 130 I D = 25A, 50A 60 100 43 40 70 40 20 t d ( o f f ) - Nanoseconds 58 TJ = 125C, VGS = 10V VDS = 50V t d ( o f f ) - Nanoseconds 36 t f - Nanoseconds 105 250 140 t f - Nanoseconds TJ = 125C 35 95 td(off) - - - - tf 30 85 160 64 25 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 38 34 65 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current tf 43 I D = 25A, 50A RG - Ohms 35 50 61 25A < I D < 50A VDS = 50V 34 40 12 48 55 40 10 46 35 45 0 RG = 3.3, VGS = 10V 36 60 8 44 64 37 t d ( o n ) - Nanoseconds 120 6 42 td(off) - - - - tf 65 I D = 50A 4 40 t d ( o f f ) - Nanoseconds VDS = 50V 80 38 38 70 TJ = 125C, VGS = 10V 140 t r - Nanoseconds td(on) - - - - t f - Nanoseconds 160 36 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 180 tr 34 I D - Amperes 40 2 4 6 8 10 12 14 16 18 20 RG - Ohms IXYS REF:T_180N10T (61) 11-20-06-A.xls