© 2006 IXYS CORPORATION All rights reserved DS99712 (11/06)
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 175°C 100 V
VDGR TJ= 25°C to 175°C; RGS = 1 MΩ100 V
VGSM Transient ± 30 V
ID25 TC= 25°C 180 A
ILRMS Lead Current Limit, RMS 75 A
IDM TC= 25°C, pulse width limited by TJM 450 A
IAR TC= 25°C25A
EAS TC= 25°C 750 mJ
dv/dt IS≤ I
DM, di/dt ≤ 100 A/µs, VDD ≤ V
DSS 3 V/ns
TJ≤ 175°C, RG = 3.3 Ω
PDTC= 25°C 480 W
TJ-55 ... +175 °C
TJM 175 °C
Tstg -55 ... +175 °C
TL1.6 mm (0.062 in.) from case for 10 s 300 °C
TSOLD Plastic body for 10 seconds 260 °C
MdMounting torque 1.13 / 10 Nm/lb.in.
Weight TO-3P 5.5 g
TO-247 6 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0 V, ID = 250 µA 100 V
VGS(th) VDS = VGS, ID = 250 µA 2.5 4.5 V
IGSS VGS = ± 20 V, VDS = 0 V ± 200 nA
IDSS VDS = VDSS 5µA
VGS = 0 V TJ = 150°C 250 µA
RDS(on) VGS = 10 V, ID = 25 A, Notes 1, 2 5.4 6.4 m Ω
TrenchMVTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTH180N10T
IXTQ180N10T
VDSS = 100 V
ID25 = 180 A
RDS(on) ≤≤
≤≤
≤6.4 mΩΩ
ΩΩ
Ω
TO-3P (IXTQ)
Preliminary Technical Information
GDS
TO-247 (IXTH)
G
S
D
G = Gate D = Drain
S = Source TAB = Drain
(TAB)
(TAB)
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
Distributed Power Architechtures
and VRMs
Electronic Valve Train Systems
High Current Switching
Applications
High Voltage Synchronous Recifier
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTH180N10T
IXTQ180N10T
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
gfs VDS= 10 V; ID = 60 A, Note 1 70 110 S
Ciss 6900 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 923 pF
Crss 162 pF
td(on) Resistive Switching Times 33 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = 25 A 54 ns
td(off) RG = 3.3 Ω (External) 42 ns
tf31 ns
Qg(on) 151 nC
Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A 39 nC
Qgd 45 nC
RthJC 0.31°C/W
RthCS 0.25 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
TJ = 25°C unless otherwise specified) Min. Typ. Max.
ISVGS = 0 V 180 A
ISM Pulse width limited by TJM 450 A
VSD IF = 25 A, VGS = 0 V, Note 1 0.95 V
trr IF = 25 A, -di/dt = 100 A/µs 100 ns
VR = 50 V, VGS = 0 V
Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %;
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5 mm or less from the package body.
TO-3P (IXTQ) Outline
Pins: 1 - Gate 2 - Drain
3 - Source 4, TAB - Drain
TO-247AD Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
1 2 3
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2 7,071,537
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
© 2006 IXYS CORPORATION All rights reserved
IXTH180N10T
IXTQ180N10T
Fig. 1. Output Characteristics
@ 25ºC
0
20
40
60
80
100
120
140
160
180
0 0.2 0.4 0.6 0.8 1 1.2
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
6V
7V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
25
50
75
100
125
150
175
200
225
250
275
300
01234567
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
7V
6V
Fig. 3. Output Characteristics
@ 150ºC
0
20
40
60
80
100
120
140
160
180
0 0.4 0.8 1.2 1.6 2 2.4 2.8
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
6V
5V
7V
Fig. 4. R
DS(on)
Normalized to I
D
= 90A Value
vs. Junction Temperature
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 180A
I
D
= 90A
Fig. 5. R
DS(on)
Normalized to I
D
= 90A Value
vs. Drain Current
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
0 50 100 150 200 250 300
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
15V - - - -
T
J
= 175ºC
T
J
= 25ºC
Fig. 6. Drain Current vs. Case Temperature
0
20
40
60
80
100
120
140
-50 -25 0 25 50 75 100 125 150 175
T
C
- Degrees Centigrade
I
D
- Amperes
External Lead Current Limit for TO-263 (7-Lead)
External Lead Current Limit for TO-3P, TO-220, & TO-263
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTH180N10T
IXTQ180N10T
Fig. 7. Input Admittance
0
25
50
75
100
125
150
175
200
225
3.5 4 4.5 5 5.5 6 6.5 7 7.5
V
GS
- Volts
I
D
- Amperes
T
J
= 150ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
15
30
45
60
75
90
105
120
135
150
0 25 50 75 100 125 150 175 200 225 250
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
150ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
25
50
75
100
125
150
175
200
225
250
275
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
V
SD
- Volts
I
S
- Amperes
T
J
= 150ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140 160
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 50V
I
D
= 25A
I
G
= 10mA
Fig. 11. Capacitance
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Maximum Transient Thermal
Impedance
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Second
Z
(th)JC
- ºC / W
© 2006 IXYS CORPORATION All rights reserved
IXTH180N10T
IXTQ180N10T
IXYS REF:T_180N10T (61) 11-20-06-A.xls
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
10
15
20
25
30
35
40
45
50
55
60
65
70
24 26 28 30 32 34 36 38 40 42 44 46 48 50
I
D
- Amperes
t
r
- Nanosecond
s
R
G
= 3.3Ω
V
GS
= 10V
V
DS
= 50V
T
J
= 125ºC
T
J
= 25ºC
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
0
20
40
60
80
100
120
140
160
180
4 6 8 101214161820
R
G
- Ohms
t
r
- Nanosecond
s
30
35
40
45
50
55
60
65
70
75
t
d ( o n )
- Nanosecond
s
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 50V
I
D
= 50A
I
D
= 25A
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
30
31
32
33
34
35
36
37
38
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanosecond
s
40
43
46
49
52
55
58
61
64
t
d ( o f f )
- Nanosecond
s
t
f
t
d(off)
- - - -
R
G
= 3.3Ω, V
GS
= 10V
V
DS
= 50V
25A < I
D
< 50A
I
D
= 25A, 50A
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
30
31
32
33
34
35
36
37
38
25 30 35 40 45 50
I
D
- Amperes
t
f
- Nanoseconds
40
43
46
49
52
55
58
61
64
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 3.3Ω, V
GS
= 10V
V
DS
= 50V
T
J
= 125ºC
T
J
= 25ºC
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
10
15
20
25
30
35
40
45
50
55
60
65
70
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanosecond
s
R
G
= 3.3Ω
V
GS
= 10V
V
DS
= 50V
I
D
= 50A
I
D
= 25A
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
20
40
60
80
100
120
140
160
2 4 6 8 10 12 14 16 18 20
R
G
- Ohms
t
f
- Nanoseconds
40
70
100
130
160
190
220
250
t
d ( o f f )
- Nanosecond
s
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 50V
I
D
= 25A, 50A
25A < I
D
< 50A
