SCT20N120H - STMICROELECTRONICS - Datasheet.Directory

TAB

H2PAK-2

D(TAB)

G(1)

S(2,3)

NCHG1DTABS23

Features

• Very tight variation of on-resistance vs. temperature

• Very high operating junction temperature capability (TJ = 200 °C)

• Very fast and robust intrinsic body diode

• Low capacitance

Applications

• Solar inverters, UPS

• Motor drives

• High voltage DC-DC converters

• Switch mode power supplies

Description

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative

properties of wide bandgap materials. This results in unsurpassed on-resistance per

unit area and very good switching performance almost independent of temperature.

The outstanding thermal properties of the SiC material allow designers to use an

industry-standard outline with significantly improved thermal capability. These

features render the device perfectly suitable for high-efficiency and high power

density applications.

Product status link

SCT20N120H

Product summary

Order code SCT20N120H

Marking SCT20N120

Package H2PAK-2

Packing Tape and reel

Silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ

(typ., TJ=150 °C), in an H²PAK-2 package

SCT20N120H

Datasheet

DS13094 - Rev 1 - September 2019

For further information contact your local STMicroelectronics sales office.

www.st.com

1Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VDS Drain-source voltage 1200 V

VGS Gate-source voltage -10 to 25 V

IDDrain current (continuous) at TC = 25 °C 20 A

IDDrain current (continuous) at TC = 100 °C 16 A

IDM (1) Drain current (pulsed) 45 A

PTOT Total power dissipation at TC = 25 °C 175 W

Tstg Storage temperature range

-55 to 200

°C

TjOperating junction temperature range °C

1. Pulse width limited by safe operating area.

Table 2. Thermal data

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case 1 °C/W

Rthj-pcb (1) Thermal resistance junction-pcb 35 °C/W

1. When mounted on 1 inch² FR-4 board, 2 oz Cu.

SCT20N120H

Electrical ratings

DS13094 - Rev 1 page 2/16

2Electrical characteristics

(TCASE = 25 °C unless otherwise specified).

Table 3. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

IDSS Zero gate voltage drain

current

VGS = 0 V, VDS = 1200 V 100

µA

VGS = 0 V, VDS = 1200 V, TJ = 200 °C 50

IGSS Gate-body leakage current VDS = 0 V, VGS = -10 to 22 V 100 nA

VGS(th) Gate threshold voltage VDS = VGS, ID = 1 mA 2 3.5 V

RDS(on) Static drain-source on-

resistance

VGS = 20 V, ID = 10 A 169 239

mΩ

VGS = 20 V, ID = 10 A, TJ = 150 °C 189

VGS = 20 V, ID = 10 A, TJ = 200 °C 220

Table 4. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitance

VDS = 400 V, f = 1 MHz, VGS = 0 V

- 650 - pF

Coss Output capacitance - 65 - pF

Crss Reverse transfer capacitance - 14 - pF

QgTotal gate charge

VDD = 800 V, ID = 10 A,

VGS = 0 to 20 V

- 45 - nC

Qgs Gate-source charge - 7 - nC

Qgd Gate-drain charge - 11.7 - nC

RgGate input resistance f=1 MHz, ID = 0 A - 7 - Ω

Table 5. Switching energy (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

Eon Turn-on switching energy VDD = 800 V, ID = 10 A

RG= 6.8 Ω, VGS = -2 to 20 V

- 160 - µJ

Eoff Turn-off switching energy - 90 - µJ

Eon Turn-on switching energy VDD = 800 V, ID = 10 A

RG= 6.8 Ω, VGS = -2 to 20 V,

TJ= 150 °C

- 165 - µJ

Eoff Turn-off switching energy - 100 - µJ

SCT20N120H

Electrical characteristics

DS13094 - Rev 1 page 3/16

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on)V Turn-on delay time

VDD = 800 V, ID = 10 A, RG = 0 Ω,

VGS = 0 to 20 V

- 10 - ns

tf(V) Fall time - 17 - ns

td(off)V Turn-off delay time - 27 - ns

tr(V) Rise time - 16 - ns

Table 7. Reverse SiC diode characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

VSD Diode forward voltage IF = 5 A, VGS = -5 V - 3.6 - V

trr Reverse recovery time

ISD =10 A, VGS = -5 V, VR = 800 V,

dif/dt = 1650 A/µs

- 15 - ns

Qrr Reverse recovery charge - 75 - nC

Irrm Peak reverse recovery

current - 8 - A

SCT20N120H

Electrical characteristics

DS13094 - Rev 1 page 4/16

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area

0.1 1100 VDS(V)

(A)

Operation in this area is

Limited by max RDS(on)

100µs

1ms

10ms

Single pulse

0.1

GIPD051020141115FSR

Figure 2. Typical thermal impedance

°C/W

0.2

10-6 tp(s)

0.0

0.1

0.3

0.4

0.5

0.6

0.7

0.8

10-5 10-4 10-3 10-2 10-1 100

Single pulse

GIPD051120141138FSR

Figure 3. Output characteristics @ TJ = 25 °C

0VDS(V)

(A)

VGS= 20 V

18V

14V

10V

12V

16V

GIPD311020141112FSR

Figure 4. Output characteristics @ TJ = 200 °C

0VDS(V)

(A)

VGS= 20 V

18V

14V

10V

12V

16V

GIPD311020141129FSR

Figure 5. Transfer characteristics

0VGS(V)

(A)

VDS = 12 V

12 16

TJ = 200 °C

TJ = 25 °C

GIPD311020141137FSR

Figure 6. Body diode characteristics @ TJ = -50 °C

IDS

-5

VDS(V) -1

(A)

VGS = -5 V

-2

-10

-15

-3

-4

-5

VGS = 0 V

VGS = -2 V

GIPD311020141159FSR

SCT20N120H

Electrical characteristics (curves)

DS13094 - Rev 1 page 5/16

Figure 7. Body diode characteristics @ TJ = 25 °C

IDS

-5

VDS(V) -1

(A)

VGS = -5 V

-2

-10

-15

-3

-4

-5

VGS = 0 V

VGS = -2 V

GIPD311020141335FSR

Figure 8. Body diode characteristics @ TJ = 150 °C

IDS

-5

VDS(V) -1

(A)

VGS = -5 V

-2

-10

-15

-3

-4

-5

VGS = 0 V

VGS = -2 V

GIPD311020141338FSR

Figure 9. 3rd quadrant characteristics @ TJ = -50 °C

-20

VDS(V) 0

(A)

VGS = 5 V

-1

-30

-40

-2

-3

TJ = -50 °C

-4

VGS = 15 V

VGS = 0 V

-5

-10

VGS = 20 V

VGS = 10 V

GIPD311020141343FSR

Figure 10. 3rd quadrant characteristics @ TJ = 25 °C

-20

VDS(V) 0

(A)

VGS = 5 V

-1

-30

-40

-2

-3

TJ = 25 °C

-4

VGS = 15 V

VGS = 0 V

-5

-10

VGS = 20 V

VGS = 10 V

GIPD311020141352FSR

Figure 11. 3rd quadrant characteristics @ TJ = 150 °C

-20

VDS(V) 0

(A)

VGS = 5 V

-1

-30

-40

-2

-3

TJ = 150 °C

-4

VGS = 15 V

VGS = 0 V

-5

-10

VGS = 20 V

VGS = 10 V

GIPD311020141405FSR

Figure 12. Normalized gate threshold vs. temperature

VGS(th)

0.8

-50 0 50 Tj(°C)

(norm)

0.4 100

0.6

1.0

1.2

150

ID = 1 mA

GIPD311020141411FSR

SCT20N120H

Electrical characteristics (curves)

DS13094 - Rev 1 page 6/16

Figure 13. Normalized RDS(on) vs. temperature

RDS(on)

0.95

25 50 100 Tj(°C)

(norm)

0.85 125

0.90

1.00

1.05

1.10

150 175

1.15

VGS = 20 V

GIPD051120141148FSR

Figure 14. Capacitances variation

0.1 1 100 VDS(V)10

(pF)

100

1000 Ciss

Coss

Crss

f = 1 MHz

GIPD311020141419FSR

SCT20N120H

Electrical characteristics (curves)

DS13094 - Rev 1 page 7/16

3Test circuits

Figure 15. Switching test waveforms for transition times

GIPD101020141511FSR

Figure 16. Clamped inductive switching waveform

VDS

VDS On

td (Off) tr

tOff

90%

tOn

td (On) tf

VGS

VGS Off

GS On

VDS Off

10%

90%

10%

GIPD101020141502FSR

SCT20N120H

Test circuits

DS13094 - Rev 1 page 8/16

4Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,

depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product

status are available at: www.st.com. ECOPACK is an ST trademark.

SCT20N120H

Package information

DS13094 - Rev 1 page 9/16

4.1 H²PAK-2 package information

Figure 17. H²PAK-2 package outline

8159712_8

SCT20N120H

H²PAK-2 package information

DS13094 - Rev 1 page 10/16

Table 8. H²PAK-2 package mechanical data

Dim.

Min. Typ. Max.

A 4.30

4.70

A1 0.03 0.20

C 1.17 1.37

e 4.98 5.18

E 0.50 0.90

F 0.78 0.85

H 10.00 10.40

H1 7.40 7.80

L 15.30 15.80

L1 1.27 1.40

L2 4.93 5.23

L3 6.85 7.25

L4 1.5 1.7

M 2.6 2.9

R 0.20 0.60

V 0° 8°

Figure 18. H²PAK-2 recommended footprint

8159712_8

Note: Dimensions are in mm.

SCT20N120H

H²PAK-2 package information

DS13094 - Rev 1 page 11/16

4.2 Packing information

Figure 19. Tape outline

A0 D1

User direction of feed

10 pitches cumulative

tolerance on tape +/- 0.2 mm

User direction of feed

Bending radius

Top cover

tape

AM08852v2

SCT20N120H

Packing information

DS13094 - Rev 1 page 12/16

Figure 20. Reel outline

Full radius

Tape slot

In core for

Tape start

G measured

At hub

REEL DIMENSIONS

40 mm min.

Access hole

At slot location

Table 9. Tape and reel mechanical data

Tape Reel

Dim.

Min. Max. Min. Max.

A0 10.5 10.7 A 330

B0 15.7 15.9 B 1.5

D 1.5 1.6 C 12.8 13.2

D1 1.59 1.61 D 20.2

E 1.65 1.85 G 24.4 26.4

F 11.4 11.6 N 100

K0 4.8 5.0 T 30.4

P0 3.9 4.1

P1 11.9 12.1 Base quantity 1000

P2 1.9 2.1 Bulk quantity 1000

R 50

T 0.25 0.35

W 23.7 24.3

SCT20N120H

Packing information

DS13094 - Rev 1 page 13/16

Revision history

Table 10. Document revision history

Date Revision Changes

11-Sep-2019 1 First release.

SCT20N120H

DS13094 - Rev 1 page 14/16

Contents

1Electrical ratings ..................................................................2

2Electrical characteristics...........................................................3

2.1 Electrical characteristics (curves) .................................................5

3Test circuits .......................................................................8

4Package information...............................................................9

4.1 H²PAK-2 package information ....................................................9

4.2 Packing information ...........................................................11

Revision history .......................................................................14

SCT20N120H

Contents

DS13094 - Rev 1 page 15/16

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SCT20N120H

DS13094 - Rev 1 page 16/16