NSR0520V2T1G Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc-dc converter, clamping and protection applications in portable devices. NSR0520V2 in a SOD-523 miniature package enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. Features * * * * * * * http://onsemi.com 20 VOLT SCHOTTKY BARRIER DIODE Very Low Forward Voltage Drop - 325 mV @ 100 mA Low Reverse Current - 8.0 mA @ 10 V Continuous Forward Current - 500 mA Power Dissipation with Minimum Trace - 170 mW Very High Switching Speed - 12 ns @ 10 mA Low Capacitance - 35 pF @ 1.0 V This is a Pb-Free Device 1 CATHODE 2 Typical Applications * * * * * LCD and Keypad Backlighting Camera Photo Flash Buck and Boost dc-dc Converters Reverse Voltage and Current Protection Clamping and Protection 1 SOD-523 CASE 502 PLASTIC MARKING DIAGRAM Markets * * * * * 2 ANODE Mobile Handsets MP3 Players Digital Camera and Camcorders Notebook PCs & PDAs GPS 1 Symbol Value Unit Reverse Voltage VR 20 Vdc Forward Continuous Current (DC) IF 500 mA IFSM 2.0 A Non-Repetitive Peak Forward Surge Current ESD Rating: Human Body Model Machine Model ESD Class 3B Class C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. (c) Semiconductor Components Industries, LLC, 2008 July, 2008 - Rev. 1 2 AA = Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) MAXIMUM RATINGS Rating AA M G G 1 *Date Code orientation position may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping NSR0520V2T1G SOD-523* (Pb-Free) 3000/Tape & Reel *This package is inherently Pb-Free. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NSR0520V2T1/D NSR0520V2T1G THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction-to-Ambient (Note 1) Total Power Dissipation @ TA = 25C RqJA PD 600 170 C/W mW Thermal Resistance Junction-to-Ambient (Note 2) Total Power Dissipation @ TA = 25C RqJA PD 300 340 C/W mW TJ, Tstg -55 to +125 C Junction and Storage Temperature Range 1. Mounted onto a 4 in square FR-4 board 10 mm sq. 1 oz. Cu 0.06" thick single-sided. Operating to steady state. 2. Mounted onto a 4 in square FR-4 board 1 in sq. 1 oz. Cu 0.06" thick single-sided. Operating to steady state. ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max 8.0 75 30 255 325 410 320 390 480 Unit Reverse Leakage (VR = 10 V) (VR = 20 V) IR Forward Voltage (IF = 10 mA) (IF = 100 mA) (IF = 500 mA) VF Total Capacitance (VR = 1.0 V, f = 1 MHz) CT 35 pF Reverse Recovery Time (IF = IR = 10 mA, IR = 1.0 mA) trr 12.0 ns DC Current Source + - 750 mH 50 W Output Pulse Generator 0.1 mF 0V IF tr 10% 90% VR 0.1 mF tp Pulse Generator Output IF DUT Adjust for IRM trr RL = 50 W IRM Current Transformer 50 W Input Oscilloscope 1. 2. 3. 4. 5. iR(REC) = 1 mA Output Pulse (IF = IRM = 10 mA; measured at iR(REC) = 1 mA) DC Current Source is adjusted for a Forward Current (IF) of 10 mA. Pulse Generator Output is adjusted for a Peak Reverse Recovery Current IRM of 10 mA. Pulse Generator transition time << trr. IR(REC) is measured at 1 mA. Typically 0.1 X IRM or 0.25 X IRM. tp trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 2 mA mV NSR0520V2T1G 100000 IR, REVERSE CURRENT (mA) 10000 100 1 25C 10 85C 1 0.1 0 0.05 0.1 25C 0.15 0.2 -40C 0.25 0.3 0.35 0.4 1 25C 1000 85C 100 10 25C 1 0.1 0.01 -40C 0.001 0.0001 0 0.45 0.5 2 4 6 8 10 12 14 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 2. Figure 3. 60 Ct, TOTAL CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 1000 55 50 45 40 35 30 25 20 15 10 0 2 4 6 8 10 12 14 VR, REVERSE VOLTAGE (V) Figure 4. http://onsemi.com 3 16 18 20 16 18 20 NSR0520V2T1G PACKAGE DIMENSIONS SOD-523 CASE 502-01 ISSUE C -X- A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. -Y- B 1 2 D 2 PL 0.08 (0.003) M DIM A B C D J K S T X Y C J MILLIMETERS MIN NOM MAX 1.10 1.20 1.30 0.70 0.80 0.90 0.50 0.60 0.70 0.25 0.30 0.35 0.07 0.14 0.20 0.15 0.20 0.25 1.50 1.60 1.70 MIN 0.043 0.028 0.020 0.010 0.0028 0.006 0.059 INCHES NOM MAX 0.047 0.051 0.032 0.035 0.024 0.028 0.012 0.014 0.0055 0.0079 0.008 0.010 0.063 0.067 -T- K SEATING PLANE S SOLDERING FOOTPRINT* 1.40 0.0547 0.40 0.0157 0.40 0.0157 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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