NSR0520V2T1G - ON Semiconductor - Datasheet.Directory

July, 2008 − Rev. 1

1Publication Order Number:

NSR0520V2T1/D

NSR0520V2T1G

Schottky Barrier Diode

Schottky barrier diodes are optimized for very low forward voltage

drop and low leakage current and are used in a wide range of dc−dc

converter, clamping and protection applications in portable devices.

NSR0520V2 in a SOD−523 miniature package enables designers to

meet the challenging task of achieving higher efficiency and meeting

reduced space requirements.

Features

•Very Low Forward Voltage Drop − 325 mV @ 100 mA

•Low Reverse Current − 8.0 mA @ 10 V

•Continuous Forward Current − 500 mA

•Power Dissipation with Minimum Trace − 170 mW

•Very High Switching Speed − 12 ns @ 10 mA

•Low Capacitance − 35 pF @ 1.0 V

•This is a Pb−Free Device

Typical Applications

•LCD and Keypad Backlighting

•Camera Photo Flash

•Buck and Boost dc−dc Converters

•Reverse Voltage and Current Protection

•Clamping and Protection

Markets

•Mobile Handsets

•MP3 Players

•Digital Camera and Camcorders

•Notebook PCs & PDAs

•GPS

MAXIMUM RATINGS

Rating Symbol Value Unit

Reverse Voltage VR20 Vdc

Forward Continuous Current (DC) IF500 mA

Non−Repetitive Peak Forward Surge

Current

IFSM 2.0 A

ESD Rating: Human Body Model

Machine Model

ESD Class 3B

Class C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

20 VOLT SCHOTTKY

BARRIER DIODE

Device Package Shipping†

ORDERING INFORMATION

CATHODE

ANODE

NSR0520V2T1G SOD−523*

(Pb−Free)

3000/Tape & Reel

http://onsemi.com

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

SOD−523

CASE 502

PLASTIC

MARKING DIAGRAM

*This package is inherently Pb−Free.

AA = Device Code

M = Date Code*

G= Pb−Free Package

*Date Code orientation position may vary depending

upon manufacturing location.

(Note: Microdot may be in either location)

AA MG

NSR0520V2T1G

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THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance

Junction−to−Ambient (Note 1)

Total Power Dissipation @ TA = 25°C

RqJA

600

170

°C/W

Thermal Resistance

Junction−to−Ambient (Note 2)

Total Power Dissipation @ TA = 25°C

RqJA

300

340

°C/W

Junction and Storage Temperature Range TJ, Tstg −55 to +125 °C

1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state.

2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

Reverse Leakage

(VR = 10 V)

(VR = 20 V)

IR8.0

Forward Voltage

(IF = 10 mA)

(IF = 100 mA)

(IF = 500 mA)

VF255

325

410

320

390

480

Total Capacitance

(VR = 1.0 V, f = 1 MHz) CT 35 pF

Reverse Recovery Time

(IF = IR = 10 mA, IR = 1.0 mA)

trr 12.0 ns

1. DC Current Source is adjusted for a Forward Current (IF) of 10 mA.

2. Pulse Generator Output is adjusted for a Peak Reverse Recovery Current IRM of 10 mA.

3. Pulse Generator transition time << trr.

4. IR(REC) is measured at 1 mA. Typically 0.1 X IRM or 0.25 X IRM.

5. tp » trr

RL = 50 W

Current

Transformer

DUT

750 mH

0.1 mF

50 W Output

Pulse

Generator

trtp

10%

90%

IRM

trr

iR(REC) = 1 mA

Output Pulse

(IF = IRM = 10 mA; measured

at iR(REC) = 1 mA)

Pulse Generator

Output

Figure 1. Recovery Time Equivalent Test Circuit

50 W Input

Oscilloscope

0.1 mF

0 V

DC Current

Source

Adjust for IRM

+−

NSR0520V2T1G

http://onsemi.com

0.1

100

1000

0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5

−40°C

85°C25°C

125°C

, FORWARD CURRENT (mA)

, FORWARD VOLTAGE (V)

Figure 2.

0.0001

0.001

0.01

0.1

100

1000

10000

100000

0 2 4 6 8 10121416182

−40°C

25°C

85°C

125°C

VR, REVERSE VOLTAGE (V)

Figure 3.

IR, REVERSE CURRENT (mA)

02468101214161820

VR, REVERSE VOLTAGE (V)

Figure 4.

Ct, TOTAL CAPACITANCE (pF)

NSR0520V2T1G

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PACKAGE DIMENSIONS

SOD−523

CASE 502−01

ISSUE C

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,

1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH

THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM

THICKNESS OF BASE MATERIAL.

−T−

SEATING

PLANE

−X−

−Y−

D2 PL

0.08 (0.003) X Y

DIM MIN NOM MAX

MILLIMETERS

A1.10 1.20 1.30

B0.70 0.80 0.90

C0.50 0.60 0.70

D0.25 0.30 0.35

J0.07 0.14 0.20

K0.15 0.20 0.25

S1.50 1.60 1.70

0.043 0.047 0.051

0.028 0.032 0.035

0.020 0.024 0.028

0.010 0.012 0.014

0.0028 0.0055 0.0079

0.006 0.008 0.010

0.059 0.063 0.067

MIN NOM MAX

INCHES

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

0.40

0.0157

0.40

0.0157

1.40

0.0547

ǒmm

inchesǓ

SCALE 10:1

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent

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applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.

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NSR0520V2T1/D

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