DS30817 Rev. 6 - 2 1 of 4
www.diodes.com BC847CDLP
© Diodes Incorporated
NEW PRODUCT
BC847CDLP
NPN DUAL SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly Processes
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Ultra Low Profile Package
Mechanical Data
Case: DFN1310H4-6
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating
94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish NiPdAu annealed over Copper
leadframe (Lead Free Plating). Solderable per MIL-
STD-202, Method 208
Marking Code Information: See Page 4
Ordering Information: See Page 4
Weight: 0.0015g (approximate)
* Dimensions D, K, L, N Repeat 4X
** Dimensions E, M, Z Repeat 2X
DFN1310H4-6
Dim Min Max Typ
A 1.25 1.38 1.30
B 0.95 1.08 1.00
C 0.20 0.30 0.25
D* - - 0.10
E** - - 0.20
G - 0.40 -
H 0 0.05 0.02
K* 0.10 0.20 0.15
L* 0.30 0.50 0.40
M** - - 0.35
N* - - 0.25
Z** - - 0.05
All Dimensions in mm
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 50 V
Collector-Emitter Voltage VCEO 45 V
Emitter-Base Voltage VEBO 6.0 V
Collector Current IC 100 mA
Power Dissipation (Note 3) Pd 350 mW
Thermal Resistance, Junction to Ambient (Note 3) RθJA 357 °C/W
Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB pad layout as shown on page 4.
4. Radiused pad feature is intended for device manufacturing control and should not be considered as a polarity indicator, or to suggest orientation of
the devices in the carrier tape.
C
B
BE
EC
In ternal Sc h ema ti c
(TO P VIEW)
Bottom View
Side View
GH
B
K
E
C
D
Top View
A
L
L
N
M
N
C
EBC
E
B
D
Z
Z
R0.150
Note 4
DS30817 Rev. 6 - 2 2 of 4
www.diodes.com BC847CDLP
© Diodes Incorporated
NEW PRODUCT
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage (Note 5) V(BR)CBO 50 V IC = 10µA, IB = 0
Collector-Emitter Breakdown Voltage (Note 5) V(BR)CEO 45 V IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage (Note 5) V(BR)EBO 6 V IE = 1µA, IC = 0
DC Current Gain (Note 5) hFE 420 650 800 VCE = 5.0V, IC = 2.0mA
Collector-Emitter Saturation Voltage (Note 5) VCE(SAT) 55
130 250
600 mV IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
Base-Emitter Saturation Voltage (Note 5) VBE(SAT) 700
900 mV IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
Base-Emitter Voltage (Note 5) VBE(ON) 580
660
700
770 mV VCE = 5.0V, IC = 2.0mA
VCE = 5.0V, IC = 10mA
Collector-Cutoff Current (Note 5) ICES
ICBO
ICBO
15
15
5.0
nA
nA
µA
VCE = 50V
VCB = 30V
VCE = 30V, TA = 150°C
Gain Bandwidth Product fT 100 MHz VCE = 5.0V, IC = 10mA,
f = 100MHz
Collector-Base Capacitance CCBO 2.0 pF VCB = 10V, f = 1MHz
Notes: 3. Device mounted on FR-5 PCB pad layout as shown on page 4.
5. Short duration test pulse used to minimize self-heating effect.
0
50
100
50 100 150
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERA TURE (°C)
Fig. 1, Power Dissipation vs. Ambient Temperature (Note 3)
A
150
200
250
0
300
350
25 75 125
I , COLLECTOR CURRENT (A)
C
V , COLLECTOR EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current vs. Collector Emitter Voltage
CE
0.00
0.05
0.10
0.15
0.20
0.25
0123456
DS30817 Rev. 6 - 2 3 of 4
www.diodes.com BC847CDLP
© Diodes Incorporated
NEW PRODUCT
0
200
400
600
800
1000
1200
1400
0.1 101100
h, D
C
C
U
R
R
EN
T
G
AIN
FE
I , COLLECTOR CURRENT (mA)
Fig. 3, Typical DC Current Gain vs. Collector Current
C
V= 5V
CE
T= -55°C
A
T= 85°C
A
T =150°C
A
T= 25°C
A
110100
V,
C
O
LLE
C
T
O
R
-E
M
I
T
T
E
R
SAT URATION VOLTAGE (V )
CE(SAT)
I , COLLECTOR CURRENT (mA)
C
0.00
0.05
0.10
0.15
0.20
0.25
0.1
0.01
Fig. 4, Typical Collector Emitter Saturation V oltage
vs. Collector Cu r r ent
110100
V , BASE EMI
T
T
E
R
TURN-ON VOLTAGE (V)
BE(ON)
I , COLLECTOR CURRENT (mA)
C
0.0 0.1
0.01
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Fig. 5, T ypical Base Emitter Turn-On Voltage
vs. Collector Current
110100
V , BASE EMI
T
T
E
R
SATURATION VOLTAGE (V)
BE(SAT)
I , COLLECTOR CURRENT (mA)
C
0.0 0.1
0.01
0.2
0.4
0.6
0.8
1.0
1.2
Fig. 6, Typical Base Emitter Saturation Voltage
vs. Collector Current
CAPAC ITANCE (pF)
V , REVERSE VOLT AGE (V)
Fig. 7, Typical Capacitance Characteristics
R
0
2
4
6
8
10
12
14
0 5 10 15 20 25
f = 1MHz
I , COLLECTOR CURRENT (mA)
Fig. 8, Typical Gain-Bandwidth Product vs. Collector Current
C
00
50
100
150
200
250
300
10 20 30 40 50 60 70
f,
G
AIN-BANDWID
T
H
P
R
O
D
U
C
T
(M
H
z)
T
DS30817 Rev. 6 - 2 4 of 4
www.diodes.com BC847CDLP
© Diodes Incorporated
NEW PRODUCT
1M
Ordering Information (Note 6)
Notes: 6. For packaging details, please go to our website at http://www.diodes.com/ap02007.pdf.
Marking Information (Note 7)
Note: 7. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated or mixed (both ways).
Suggested Pad Layout
X3 aX
Y
Y2
Y1
X1
X2
b
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume an y liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages. LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
Device Package Shipping
BC847CDLP-7 DFN1310H4-6 3000/Tape & Reel
DFN1310H4-6
Dim Value
X 0.52
Y 0.52
X1 0.20
Y1 0.375
X2 0.17
Y2 0.16
X3 0.15
a 0.09
b 0.06
All Dimensions in mm
1M = Product Type Marking Code
(TOP VIEW)