Mee ee TELEDYNE COMPONENTS >> 28 D mm A9u7402 OOObLN? 9 mm 7 O77? A GENERAL PURPOSE SILICON EPITAXIAL VARACTRON Wee cece VOLTAGE-VARIABLE CAPACITANCE DIODES e ALL EPITAXIAL GEOMETRY 415 ECHANI CONSTRUCTION (P--NN+) MECHANICAL DATA e DC(MWV) RATINGS Glass Body FROM 15-1 30 VOLTS Oumet Leads, ell e VERY LOW LEAKAGE pe! 0.096-0.011 DIA. e ABRUPT JUNCTION | ELECTRICAL DATA AS8SOLUTE MAXIMUM RATINGS PARAMETER . SYMBOL | MAXIMUM | UNITS cathode 0:765:40.035 Operating Temperature Tope 65 to +150 (wide calor band) femnemead Storage Temperature Taig 65 to +175 C Total Power Dissipation (@ 25C in free air} Po 400 mW (2.920.002 pte 10 MIN. Maximum Working Voltage MWV | as Specified* voc Tar , Bias voltage plus signal voltage should not exceed MWV All Dimensions la Inches ELECTRICAL CHARACTERISTICS Ta = 25C (UNLESS OTHERWISE STATED) DIODE (pf VOLTAGE (MWY) RANGE (pf Q@ 4vDC, 50 MC CURRENT (A DC) TYPE +20% @ 4V, IMC (@ 0.1V to MWY) MINIMUM TYPICAL Test Volts to _ NOTE: Capacitance values are + 20%. Tolerances of +10% and +5%, and matched pairs, are available upon request. Capacitance values can be modified to meet specific requirements. 4P TELEDYNE CRYSTALONICS 2 eee ee oe Sh 0.4196 | 4179 E-02 125 Fae ee ee TELEDYNE COMPONENTS 2a CAPACITANCE upf TUNING RATIO Co/C() 100 1 0 1N950 956 V20G 100G Continued VOL Coiore = Cy + C. G-KWV + 9) O41 1 4 10 REVERSE BIAS VOLTAGE (Vdc) D TYPICAL DIODE CAPACITANCE VS BIAS VOLTAGE CHARACTERISTICS AT 25C TYPICAL 4 VOLT CAPACITANCE 6.5uuf 100-20 30 40 50 60 70 80 90 REVERSE @IAS VOLTAGE (Vdc) RATIO OF DIODE CAPACITANCES AT ZERO AND REVERSE BIAS VOLTAGES AT 25C FOR TYPICAL DIODES 100 m8 8917602 OOObL44 O 600 S 500 _ 5 @ 400 ad = u, 300 w ti 200 = 9 ic 10 0 1 2 3456 10 20 30 405060 100 REVERSE BIAS VOLTAGE (Vdc) FIGURE OF MERIT (Q) VS BIAS VOLTAGE AT 25C 5 wa 25 zZ> 20 Eo 10 ges a <= Qo oO 3-5 5 i -10 ud #2 ez- a< X25 GS -40 ~20 0 20 40 60 80 100 120 140 TEMPERATURE (C) TEMPERATURE COEFFICIENT OF CAPACITANCE IN PERCENT CHANGE OF 25 VALUE Crystalonics 1N950-956 and V20G-100G Varactron Voltage-Variable Capacitance Diodes are designed for applications such as VHF-UHF frequency multiplication, harmonic generation, oscillator tuning, electronic tuning, frequency modulation, parametric amplifiers, auto- matic frequency control, limiting, and switching. These diodes are manufactured by Crystalonics exclusive Epitaxial Junction Process, which provides close parameter tolerances, high parameter stability, extreme ruggedness, and a high product of Q and Maximum Working Voltage. 4 TELEDYNE CRYSTALONICS. aicinistisretiacersstzene tw 710-320-4106 4180 E-03 126 eo f