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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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MOC20xM, MOC21xM — 8-pin SOIC Single-Channel Phototransistor Output Optocoupler
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC20xM, MOC21xM Rev. 1.5
August 2015
MOC205M, MOC206M, MOC207M,
MOC211M, MOC212M, MOC213M, MOC216M, MOC217M
8-pin SOIC Single-Channel Phototransistor Output
Optocoupler
Features
Closely Matched Current Transfer Ratios
•Minimum BV
CEO of 70 V Guaranteed
– MOC205M, MOC206M, MOC207M
•Minimum BV
CEO of 30 V Guaranteed
– MOC211M, MOC212M, MOC213M, MOC216M,
MOC217M
Low LED Input Current Required for Easier Logic
Interfacing
– MOC216M, MOC217M
Convenient Plastic SOIC-8 Surface Mountable
Package Style , with 0.050 " Lead Spacing
Safety and Regulatory Approvals:
– UL1577, 2,500 VACRMS for 1 Minute
– DIN-EN/IEC60747-5-5, 565 V Peak Working
Insulation Voltage
Applications
Feedback Control Circuits
Interfacing and Coupling Systems of Different
Potentials and Impedances
General Purpose Switching Circuits
Monitor and Detection Circuits
Description
These devices consist of a gallium arsenide infrared
emitting diode optically coupled to a monolithic silicon
phototransistor detector, in a surface mountable, small
outline, plastic package. They are ideally suited for
high-density applications, and eliminate the need for
through-the-board mounting .
Schematic Package Outline
BASE
N/CANODE
CATHODE
1
2
3
45
6
7
8
EMITTER
COLLECTORN/C
N/C
Figure 1. Schematic
Figure 2. Package Outline
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC20xM, MOC21xM Rev. 1.5 2
MOC20xM, MOC21xM — 8-pin SOIC Single-Channel Phototransistor Output Optocoupler
Safety and Insulation Ratings
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only withi n the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Note:
1. Safety limit values – maximum values allowed in the event of a failure.
Parameter Characteristics
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage < 150 VRMS I–IV
< 300 VRMS I–III
Climatic Classification 55/100/21
Pollution Degree (DIN VDE 0110/1.89) 2
Comparative Tracking Index 175
Symbol Parameter Value Unit
VPR
Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR,
Type and Sample Test wi th tm = 10 s, Partial Discharge < 5 pC 904 Vpeak
Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR,
100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1060 Vpeak
VIORM Maximum Working Insulation Voltage 565 Vpeak
VIOTM Highest Allowable Over-Voltage 4000 Vpeak
External Creepage 4mm
External Clearance 4mm
DTI Distance Through Insulation (Insulation Thickness) 0.4 mm
TSCase Temperature(1) 150 °C
IS,INPUT Input Current(1) 200 mA
PS,OUTPUT Output Power(1) 300 mW
RIO Insulation Resistance at TS, VIO = 500 V(1) > 109Ω
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC20xM, MOC21xM Rev. 1.5 3
MOC20xM, MOC21xM — 8-pin SOIC Single-Channel Phototransistor Output Optocoupler
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exp osure to stresses above the reco mmended op erating conditions may affe ct device reliabil ity.
The absolute maximum ratings are stress ratings only. TA = 25°C unless otherwise specified.
Symbol Rating Value Unit
TOTAL DEVICE
TSTG Storage Temperature -40 to +125 °C
TAAmbient Operating Temperature -40 to +100 °C
TJJunction Temperature -40 to +125 °C
TSOL Lead Solder Temperature 260 for 10 seconds °C
PDTotal Device Power Dissipation @ TA = 25°C 240 mW
Derate above 25°C 2.94 mW/°C
EMITTER
IFContinuous Forward Current 60 mA
IF (pk) Forward Current – Peak (PW = 100 µs, 120 pps) 1.0 A
VRReverse Voltage 6.0 V
PDLED Power Dissipation @ TA = 25°C 90 mW
Derate above 25°C 0.8 mW/°C
DETECTOR
ICContinuous Collector Current 150 mA
VCEO Collector-Emitter Voltage 30 V
VECO Emitter-Collector Voltage 7 V
PDDetector Power Dissipation @ TA = 25°C 150 mW
Derate above 25°C 1.76 mW/°C
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC20xM, MOC21xM Rev. 1.5 4
MOC20xM, MOC21xM — 8-pin SOIC Single-Channel Phototransistor Output Optocoupler
Electrical Characteristics
TA = 25°C unless otherwise specified.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
EMITTER
VF
Input Forward Voltage
MOC216M, MOC217M IF = 1 mA 1.07 1.3 V
MOC205M, MOC206M, MOC207M
MOC211M, MOC212M, MOC213M IF = 10 mA 1.15 1.5 V
IRReverse Leakage Current VR = 6 V 0.001 100 µA
CIN Input Capacitance 18 pF
DETECTOR
ICEO1 Collector-Emitter Dark Current VCE = 10 V, TA = 25°C 1.0 50 nA
ICEO2 VCE = 10 V, TA = 100°C 1.0 µA
BVCEO
Collector-Emitter Breakdown Voltage
MOC205M, MOC206M, MOC207M IC = 100 µA 70 100 V
MOC211M, MOC212M, MOC213M,
MOC216M, MOC217M IC = 100 µA 30 100 V
BVCBO Collector-Base Breakdown Voltage IC = 10 µA 70 120 V
BVECO Emitter-Collector Breakdown Voltage IE = 100 µA 7 10 V
CCE Collector-Emitter Capacitance f = 1.0 MHz, VCE = 0 7 pF
COUPLED
CTR
Collector-Output Current
MOC205M IF = 10 mA, VCE = 10 V 40 80 %
MOC206M IF = 10 mA, VCE = 10 V 63 125 %
MOC207M IF = 10 mA, VCE = 10 V 100 200 %
MOC211M IF = 10 mA, VCE = 10 V 20 %
MOC212M IF = 10 mA, VCE = 10 V 50 %
MOC213M IF = 10 mA, VCE = 10 V 100 %
MOC216M IF = 1 mA, VCE = 5 V 50 %
MOC217M IF = 1 mA, VCE = 5 V 100 %
VCE(SAT)
Collector-Emitter Saturation Voltage
MOC205M, MOC206M, MOC207M
MOC211M, MOC212M, MOC213M IC = 2 mA, IF = 10 mA 0.4 V
MOC216M, MOC217M IC = 100 µA, IF = 1 mA 0.4 V
ton Turn-On Time IC = 2 mA, VCC = 10 V,
RL = 100 Ω (Figure 12) 7.5 µs
toff Turn-Off Time IC = 2 mA, VCC = 10 V,
RL = 100 Ω (Figure 12) 5.7 µs
trRise Time IC = 2 mA, VCC = 10 V,
RL = 100 Ω (Figure 12) 3.2 µs
tfFall Time IC = 2 mA, VCC = 10 V,
RL = 100 Ω (Figure 12) 4.7 µs
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC20xM, MOC21xM Rev. 1.5 5
MOC20xM, MOC21xM — 8-pin SOIC Single-Channel Phototransistor Output Optocoupler
Isolation Characteristics
Symbol Characteristic Test Conditions Min. Typ. Max. Unit
VISO Input-Output Isolation Voltage t = 1 Minute 2500 VACRMS
CISO Isolation Capacitance VI-O = 0 V, f = 1 MHz 0.2 pF
RISO Isolation Resistance VI-O = ±500 VDC, TA = 25°C 1011 Ω
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC20xM, MOC21xM Rev. 1.5 6
MOC20xM, MOC21xM — 8-pin SOIC Single-Channel Phototransistor Output Optocoupler
Typical Performance Curves
Figure 4. Output Curent vs. Input Current
I
F
– LED INPUT CURRENT (mA)
0.1 1 10 100
I
C
– OUTPUT COLLECTOR CURRENT (NORMALIZED)
0.01
0.1
1
10
V
CE
= 5 V
NORMALIZED TO I
F
= 10 mA
Figure 5. Output Current vs. Ambient Temperature
T
A
– AMBIENT TEMPERATURE (°C)
-80 -60 -40 -20 0 20 40 60 80 100 120
I
C
– OUTPUT COLLECTOR CURRENT (NORMALIZED)
0.1
1
10
NORMALIZED TO T
A
= 25°C
Figure 6. Output Current vs. Collector-Emitter Voltage
V
CE
– COLLECTOR-EMITTER VOLTAGE (V)
012345678910
I
C
– OUTPUT COLLECTOR CURRENT (NORMALIZED)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
I
F
= 10 mA
NORM ALIZED TO V
CE
= 5 V
Figure 7. Dark Current vs. Ambient Temperature Figure 8. CTR vs. R
BE
(Unsaturated)
T
A
– AMBIENT TEMPERATURE (°C)
020406080100
I
CEO
– COLLECTOR -EMITTER DARK CURRENT (nA)
0.1
1
10
100
1000
10000
V
CE
= 10 V
IF – LED FORWARD CURRENT (mA)
VF – FORWARD VOLTAGE (V)
Figure 3.
LED Forward Voltage vs. Forward Current
1 10 100
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
T
A
= –55°C
T
A
= 25°C
T
A
= 100°C
RBE BASE RESISTANCE (kΩ)
10 100 1000
NORMALIZED CTR
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
IF
IF =
IF
=
10 m A
= 5 mA
VCE = 5 V, TA = 25°C
Normalized to:
CTR at RBE = Open
20 mA
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC20xM, MOC21xM Rev. 1.5 7
MOC20xM, MOC21xM — 8-pin SOIC Single-Channel Phototransistor Output Optocoupler
Typical Performance Curves (Continued)
Figure 12. Switching Time Test Circuit and Waveforms
NORM
Figure 10. Normalized ton vs.
RBE
Figure 11. Normalized t
off
vs.
RBE
Figure 9. CTR vs. RBE (Saturated)
RBE RBE
BASE RESISTANCE (kΩ)
10 100 1000
NORMALIZED CTR
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
I
F
= 20 m A
I
F
= 10 m A
I
F
= 5 mA
V
CE
= 0.3 V, T
A
= 25°C
Normalized to:
CTR at R
BE
= Open
BASE RESISTANCE (MΩ )
(MΩ)
0.01 0.1 1 10 100
ALIZED ton
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VCC = 10 V
IC = 2 mA
RL = 100Ω
NORMALIZED TO :
ton AT RBE = OPEN
RBE BASE RESISTANCE
0.01 0.1 1 10 100
NORMALIZED tofff
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VCC = 10 V
IC = 2 mA
RL = 100 Ω
NORMALIZED TO :
tofff AT RBE = OPEN
OUTPUT PULSE
INPUT PULSE
TEST CIRCUIT
trtf
INPUT
IF RL
RBE
VCC = 10 V
OUTPUT
ton
10%
90%
toff
IC
Adjust IF to produce IC = 2 mA
WAVEFORMS
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC20xM, MOC21xM Rev. 1.5 8
MOC20xM, MOC21xM — 8-pin SOIC Single-Channel Phototransistor Output Optocoupler
Reflow Profile
Figure 13. Reflow Profile
Profile Freature Pb-Free Assembly Profile
Temperature Minimum (Tsmin) 150°C
Temperature Maximum (Tsmax) 200°C
Time (tS) from (Tsmin to Tsmax) 60–120 seconds
Ramp-up Rate (tL to tP) 3°C/second maximum
Liquidous Temperature (TL) 217°C
Time (tL) Maintained Above (TL) 60–150 seconds
Peak Body Package Temperature 260°C +0°C / –5°C
Time (tP) within 5°C of 260°C 30 seconds
Ramp-down Rate (TP to TL) 6°C/second maximum
Time 25°C to Peak Temperature 8 minutes maximum
Time (seconds)
Temperature (°C)
Time 25°C to Peak
260
240
220
200
180
160
140
120
100
80
60
40
20
0
T
L
t
s
t
L
t
P
T
P
Tsmax
Tsmin
120
Preheat Area
Max. Ramp-up Rate = 3°C/S
Max. Ramp-down Rate = 6°C/S
240 360
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOC20xM, MOC21xM Rev. 1.5 9
MOC20xM, MOC21xM — 8-pin SOIC Single-Channel Phototransistor Output Optocoupler
Ordering Information(2)
Note:
2. The product orderable part number system listed in this table also applies to the MOC20XM and MOC21XM products.
Marking Information
Figure 14. Top Mark
Table 1. Top Mark Definitions
Part Number Package Packing Method
MOC205M Small Outline 8-Pin Tube (100 Units)
MOC205R2M Small Outline 8-Pin Tape and Reel (2500 Units)
MOC205VM Small Outline 8-Pin, DIN EN/IEC60747-5-5 Option Tube (100 Units)
MOC205R2VM Small Outline 8-Pin, DIN EN/IEC60747-5-5 Option Tape and Reel (2500 Units)
1 Fairchild Logo
2 Device Number
3 DIN EN/IEC60747-5-5 Option (only appea rs on component ordered with this option)
4 One-Digit Year Code, e.g., “4”
5 Digit Work W eek, Ranging from “01” to “53”
6 Assembly Package Code
1
2
6
43 5
205
SYYXV
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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