AM81214-300 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG(A) The ASI AM81214-300 is Designed for 1200 - 1400 MHz, L-Band Applications. A 4x .062 x 45 2xB C F E D FEATURES: G * Internal Input/Output Matching Network * Common Base * PG = 6.5 db at 325 W/1400 MHz * OmnigoldTM Metalization System L N PDISS 55 V DIM M IN IM UM inches / m m inches / m m A .135 / 3.43 .145 / 3.68 B .100 / 2.54 .120 / 3.05 C .050 / 1.27 D .376 / 9.55 E .110 / 2.79 .130 / 3.30 F .395 / 10.03 .407 / 10.34 TSTG -65 C to +200 C JC 0.24 C/W CHARACTERISTICS .510 / 12.95 .100 / 2.54 J .690 / 17.53 .710 / 18.03 K .890 / 22.61 .910 / 23.11 L .003 / 0.08 .006 / 0.18 M .052 / 1.32 .072 / 1.83 N .118 / 3.00 .131 / 3.33 .230 / 5.84 P TC = 25 C NONETEST CONDITIONS SYMBOL .396 / 10.06 .490 / 12.45 I 730 W @ TC = 25 C M A XIM UM .193 / 4.90 G H -65 C to +250 C TJ P M 18.75 A VCC 2xR H J K I MAXIMUM RATINGS IC .040 x 45 MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 50 mA 65 V BVCES IC = 50 mA 65 V BVEBO IE = 15 mA 3.0 V ICES VCE = 50 V hFE VCE = 5.0 V PG C POUT VCC = 50 V IC = 5.0 A 10 PIN = 63 W 6.3 40 270 f = 1235 to 1365 MHz 6.8 45 300 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. 30 mA --- --dB % W REV. B 1/1