DATA SH EET
Product data sheet
Supersedes data of 2001 Jan 26 2001 Sep 21
DISCRETE SEMICONDUCTORS
PBSS5540Z
40 V low VCEsat PNP transistor
fpa
ge
M3D087
2001 Sep 21 2
NXP Semiconductors Product data sheet
40 V low VCEsat PNP transistor PBSS5540Z
FEATURES
•Low collector-emitter saturation voltage
•High current capability
•Improved device reliability due to reduced heat
generation.
APPLICATIONS
•Supply line switching circuits
•Battery manageme nt applications
•DC/DC converter applications
•Strobe flash units
•Heavy duty battery powered equipment (motor and lamp
drivers)
•MOSFET driver applications.
DESCRIPTION
PNP low VCEsat transistor in a SOT223 plastic pack age.
NPN complement: PBSS4540Z.
MARKING
TYPE NUMBER MARKING CODE
PBSS5540Z PB5540
PINNING
PIN DESCRIPTION
1base
2collector
3emitter
4collector
handbook, halfpage
4
123
MAM288
Top view
3
2, 4
1
Fig.1 Simplified outline (SOT223) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX UNIT
VCEO emitter-collector voltage −40 V
ICcollector current (DC) −5 A
ICM peak collector current −10 A
RCEsat equivalent on-resistance <80 mΩ
2001 Sep 21 3
NXP Semiconductors Pr oduct dat a shee t
40 V low VCEsat PNP transistor PBSS5540Z
LIMITING VALUES
In accordance with the Absolute Maximum Ratin g S ystem (IEC 60134).
Notes
1. Device mounted on a pr inted-circuit board, single-sided copper, tinplate d, mounting pad for collector 1 cm2.
2. Device mounted on a pr inted-circuit board, single-sided copper, tinplate d, mounting pad for collector 6 cm2.
For other mounting condition s, see “Thermal considerations for SOT223 in the General Pa rt of as sociated
Handbook”.
THERMAL CHARACTE RISTICS
Note
1. Device mounted on a pr inted-circuit board, single-sided copper, tinplate d, mounting pad for collector 1 cm2.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base volt a ge open emitter − −40 V
VCEO collector-emitter voltage open base − −40 V
VEBO emitter-base voltage open collector − −6 V
ICcollector current (DC) − −5 A
ICM peak collector current − −10 A
IBM peak base current − −2 A
Ptot total power dissipation Tamb ≤ 25 °C; note 1 −1.35 W
Tamb ≤ 25 °C; note 2 −2 W
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to
ambient in free air; note 1 92 K/W
2001 Sep 21 4
NXP Semiconductors Pr oduct dat a shee t
40 V low VCEsat PNP transistor PBSS5540Z
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector-base cut-off current VCB = −30 V; IE = 0 −−−100 nA
VCB = −30 V; IE = 0; Tj = 150 °C−−−50 μA
IEBO emitter-base cu t-off current VEB = −5 V; IC = 0 −−−100 nA
hFE DC current gain VCE = −2 V; IC = −500 mA 250 350 −
VCE = −2 V; IC = −1 A; note 1 200 300 −
VCE = −2 V; IC = −2 A; note 1 150 250 −
VCE = −2 V; IC = −5 A; note 1 50 150 −
VCEsat collector-emitter saturation voltage IC = −500 mA; IB = −5 mA − −80 −120 mV
IC = −1 A; IB = −10 mA − −120 −170 mV
IC = −2 A; IB = −200 mA − −110 −160 mV
RCEsat equivalent on-resistance IC = −2 A; IB = −200 mA; note 1 −<55 <80 mΩ
VCEsat collector-emitter saturation voltage IC = −5 A; IB = −500 mA − −250 −375 mV
VBEsat base-emitt er saturatio n voltage IC = −5 A; IB = −500 mA −−−1.3 V
VBEon base-emitter turn-on voltage VCE = −2 V; IC = −2 A − −0.8 −1.25 V
fTtransition frequen c y IC = −100 mA; VCE = −10 V;
f = 100 MHz 60 120 −MHz
Cccollector capacitance VCB = −10 V; IE = Ie = 0;
f = 1 MHz −90 105 pF
2001 Sep 21 5
NXP Semiconductors Pr oduct dat a shee t
40 V low VCEsat PNP transistor PBSS5540Z
handbook, halfpage
0
1000
200
400
600
800
MGU391
−1
hFE
IC (mA)
−10 −102−103−104
(1)
(2)
(3)
Fig.2 DC current gain as a fu nction of collector
current; ty pical values.
VCE = −2 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
handbook, halfpage
0
−1.2
−0.4
−0.8
MGU393
−10
−1
−1−10 −10
2
−10
3
−10
4
IC (mA)
VBE
(V)
(1)
(2)
(3)
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
VCE = −2 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
handbook, halfpage
−103
−102
−10
−1
−10−1
MGU395
−1−10 IC (mA)
VCEsat
(mV)
−102−103−104
(1)
(3)
(2)
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
handbook, halfpage
0
−1.2
−0.4
−0.8
MGU394
−10
−1
−1−10 −10
2
−10
3
−10
4
IC (mA)
VBEsat
(V)
(1)
(2)
(3)
Fig.5 Base-emitter saturation v oltage as a
function of collector current; typical values.
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
2001 Sep 21 6
NXP Semiconductors Pr oduct dat a shee t
40 V low VCEsat PNP transistor PBSS5540Z
handbook, halfpage
0
IC
(A)
VCE (V)
−2
−10
0
−2
−4
−6
−8
−0.4 −0.8 −1.2 −1.6
MGU392
(10)
(9)
(8)
(7)
(6)
(5)
(4)
(3)
(2)
(1)
Fig.6 Collector current as a function of
collector-emitter voltage; typical values.
(1) IB = −150 mA.
(2) IB = −135 mA.
(3) IB = −120 mA.
(4) IB = −105 mA.
(5) IB = −90 mA.
(6) IB = −75 mA.
(7) IB = −60 mA.
(8) IB = −45 mA.
(9) IB = −30 mA.
(10) IB = −15 mA.
Tamb = 25 °C.
handbook, halfpage
103
102
10
1
10−1
−10−1
MGU396
−1−10 IC (mA)
RCEsat
(Ω)
−102−103−104
(1)
(3) (2)
Fig.7 Collector-emitter equivale nt on-resistance
as a function of collector current; typical
values.
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
2001 Sep 21 7
NXP Semiconductors Pr oduct dat a shee t
40 V low VCEsat PNP transistor PBSS5540Z
PACKAGE OUTLINE
UNIT A1bpcDEe1HELpQywv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.10
0.01
1.8
1.5 0.80
0.60
b1
3.1
2.9 0.32
0.22 6.7
6.3 3.7
3.3 2.3
e
4.6 7.3
6.7 1.1
0.7 0.95
0.85 0.1 0.10.2
DIMENSIONS (mm are the original dimensions)
SOT223 SC-73 97-02-28
99-09-13
wM
bp
D
b1
e1
e
A
A1
Lp
Q
detail X
HE
E
vMA
AB
B
c
y
0 2 4 mm
scale
A
X
132
4
P
lastic surface mounted package; collector pad for good heat transfer; 4 leads SOT22
3
2001 Sep 21 8
NXP Semiconductors Pr oduct dat a shee t
40 V low VCEsat PNP transistor PBSS5540Z
DATA SHEET STATUS
Notes
1. Please consult the most rec en tly issued document before initiating or co mpleting a design.
2. The product s tatus of device(s ) described in this document may have changed since this do cument was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the produc t specification.
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does not give any representations or warranties,
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reserves the right to make changes to information
published in this doc ument, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
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equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in pe rs onal injury, death or seve re
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accepts no liability for inclusion and/or use of NXP
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modificati on .
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick refer ence data ⎯ The Quick reference data is an
extract of th e product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
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Customer notification
This data sheet was changed to reflect the new company name NXP Semicon ductors. No changes were
made to the content, except for the legal definitions and disclaimer s.
Printed in The Netherlands 613514/04/pp9 Date of release: 2001 Sep 21 Document orde r number: 9397 750 08434
