HITFETa BSP 75N Smart Lowside Power Switch Preliminary Data Sheet V1.0 Features * * * * * * * Logic Level Input Input protection (ESD) Thermal shutdown with auto restart Overload protection Short circuit protection Overvoltage protection Current limitation SOT-223 Application * All kinds of resistive, inductive and capacitive loads in switching applications * C compatible power switch for 12 V and 24 V DC applications and for 42 Volt Powernet * Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart Power Technology. Fully protected by embedded protection functions. Type Ordering Code Package HITFETa BSP 75N Q67060-S7215 P-SOT223-4-7 Product Summary Parameter Symbol Value Unit Continuous drain source voltage VDS RDS(ON) ID(lim) ID(Nom) EAS 60 V 550 m 1 A 0.7 A 550 mJ On-state resistance Current limitation Nominal load current Clamping energy Preliminary Data Sheet V1.0 1 2001-10-26 HITFETa BSP 75N Vbb + LOAD M Drain 2 HITFET (R) Overvoltage Protection 1 IN dv/dt Limitation Short Circuit Protection Overtemperature Protection ESD Current Limitation Source 3 TAB 4 Figure 1 EHA07505 Block Diagram Pin Definitions and Functions Pin Symbol Function 1 IN Input 2 DRAIN Output to the load 3 + TAB SOURCE Ground (internally connected) Preliminary Data Sheet V1.0 2 2001-10-26 HITFETa BSP 75N Circuit Description The BSP 75N is a monolithic power switch in Smart Power Technology (SPT) with a logic level input, an open drain DMOS output stage and integrated protection functions. It is designed for all kind of resistive and inductive loads (relays, solenoid) in automotive and industrial applications. Protection Functions * Overvoltage protection: An internal clamp limits the output voltage at VDS(AZ) (min 60V) when inductive loads are switched off. * Current limitation: By means of an internal current measurement the drain current is limited at ID(lim) (1.4 - 1.5 A typ.). If the current limitation is active the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. This operation leads to an increasing junction temperature until the overtemperature threshold is reached. * Overtemperature and short circuit protection: This protection is based on sensing the chip temperature. The location of the sensor ensures a fast and accurate junction temperature detection. Overtemperature shutdown occurs at minimum 150 C. A hysteresis of typ. 10 K enables an automatical restart by cooling. The device is ESD protected according Human Body Model (4 kV) and load dump protected (see Maximum Ratings). Preliminary Data Sheet V1.0 3 2001-10-26 HITFETa BSP 75N Absolute Maximum Ratings Tj = 25 C, unless otherwise specified Parameter Symbol Values Unit Remarks Continuous drain source voltage (overvoltage protection see page 3) VDS 60 V - Drain source voltage for short circuit protection VDS 32 V - Load dump protection IN = low or high (8 V); RL = 50 IN = high (8 V); RL = 22 VLoadDump1) V VLoadDump = VP + VS; VP = 13.5 V RI2) = 2 ; td = 400 ms; 80 47 VIN VIN Peak input voltage Tj Operating temperature range Storage temperature range Tstg Ptot Power dissipation (DC) Unclamped single pulse inductive energy EAS Electrostatic discharge voltage (Human VESD Continuous input voltage -0.2 ... +10 V - -0.2 ... +20 V - -40 ... +150 C -55 ... +150 C - 1.8 W - 550 mJ ID(ISO) = 0.7 A 4000 V - Body Model) according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 DIN humidity category, DIN 40 040 - E - - IEC climatic category, DIN IEC 68-1 - 40/150/56 - - RthJS RthJA 10 K/W - 70 K/W - Thermal Resistance Junction soldering point Junction - ambient3) 1) VLoadDump is setup without DUT connected to the generator per ISO 7637-1 and DIN 40 839. 2) RI = internal resistance of the load dump test pulse generator LD200. 3) Device on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm2 copper area for pin 4 connection. Preliminary Data Sheet V1.0 4 2001-10-26 HITFETa BSP 75N Electrical Characteristics Tj = 25 C, unless otherwise specified Parameter Symbol Limit Values min. typ. Unit Test Conditions max. Static Characteristics Drain source clamp voltage VDS(AZ) 60 - 75 V Off state drain current IDSS - 5 A Input threshold voltage VIN(th) 1 1.7 2.5 V Input current: normal operation, ID < ID(lim): IIN(1) current limitation mode, ID = ID(lim): IIN(2) After thermal shutdown, ID = 0 A: IIN(3) On-state resistance Tj = 25 C Tj = 150 C On-state resistance Tj = 25 C Tj = 150 C - A ID = 10 mA, Tj = -40 ... +150 C VIN = 0 V, VDS = 32 V, Tj = -40 ... +150 C ID = 10 mA VIN = 5 V - 100 200 - 200 300 1000 1500 2000 RDS(on) - - 550 850 675 1350 RDS(on) - - 475 750 550 1000 m ID = 0.7 A, VIN = 5 V m ID = 0.7 A, VIN = 10 V Nominal load current ID(Nom) 0.7 - - A Current limit ID(lim) 1 1.5 1.9 A VBB = 12 V, VDS = 0.5 V, TS = 85 C, Tj < 150 C VIN = 10 V, VDS = 12 V Dynamic Characteristics Turn-on time VIN to 90% ID: ton - 10 20 s Turn-off time VIN to 10% ID: toff - 10 20 s Preliminary Data Sheet V1.0 5 RL = 22 , VIN = 0 to 10 V, VBB = 12 V RL = 22 , VIN = 10 to 0 V, VBB = 12 V 2001-10-26 HITFETa BSP 75N Electrical Characteristics (cont'd) Tj = 25 C, unless otherwise specified Parameter Symbol Limit Values min. typ. Unit Test Conditions max. Slew rate on 70 to 50% VBB: -dVDS/ - dton 4 10 V/ s Slew rate off 50 to 70% VBB: dVDS/ dtoff - 4 10 V/ s RL = 22 , VIN = 0 to 10 V, VBB = 12 V RL = 22 , VIN = 10 to 0 V, VBB = 12 V Protection Functions1) Thermal overload trip temperature Tjt 150 165 180 C - Thermal hysteresis Tjt - 10 - - mJ ID(ISO) = 0.7 A, VBB = 32 V V VIN = 0 V, -ID = 2 x 0.7 A Unclamped single pulse inductive EAS Tj = 25 C energy Tj = 150 C 550 200 - - - - - 1 - Inverse Diode Continuous source drain voltage 1) VSD Integrated protection functions are designed to prevent IC destruction under fault conditions described in the datasheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous, repetitive operation. Preliminary Data Sheet V1.0 6 2001-10-26 HITFETa BSP 75N Block Diagram IIN RL 1 IN D 2 VIN Vbb ID HITFET (R) S VDS 3 EHA07506 Figure 2 Terms IN ESD-ZD I Source EHA07507 Figure 3 Input Circuit (ESD protection) ESD zener diodes are not designed for DC current. Preliminary Data Sheet V1.0 7 2001-10-26 HITFETa BSP 75N HITFET (R) D VZ S EHA07508 VIN VDS(AZ) VDS VRR t EHA07509 Figure 4 Inductive and Overvoltage Output Clamp VIN ID ID(lim) t EHA07510 Figure 5 Turn on into Overload or short Circuit Shut down by overtemperature and restart by cooling. Current internally limited at ID(lim). Preliminary Data Sheet V1.0 8 2001-10-26 HITFETa BSP 75N On-state Resistance RON = f(Tj); ID = 0.7 A; VIN = 10 V Maximum allowable Power Dissipation Ptot = f(TC) EHA07511 2.0 EHA07513 1000 m Ptot W R ON 1.6 800 1.4 700 1.2 600 1.0 500 0.8 400 0.6 300 0.4 200 0.2 100 max. 0 typ. 0 25 50 75 100 0 -50 -25 0 C 150 25 50 75 100 Tj TC On-state Resistance RON = f(Tj); ID = 0.7 A; VIN = 5 V Typ. input Threshold Voltage VIN(th) = f(Tj); ID = 10 mA; VDS = 12 V EHA07512 VIN(th) [V] 1400 m C 150 R ON 2,5 2 1000 max. 1,5 800 600 1 typ. 400 0,5 200 0 -50 -25 0 25 50 75 100 0 C 150 -50 -25 Tj Preliminary Data Sheet V1.0 9 0 25 50 75 100 125 150 Tj [C] 2001-10-26 HITFETa BSP 75N Typ. Current Limitation ID(lim) = f(Tj); VDS = 12 V, VIN = 10 V 2000 ID(lim) [A] RON [mOhm] Typ. On-state Resistance RON = f(VIN); ID = 0.7 A; Tj = 25 C 1800 1600 1400 1,6 1,5 1,4 1200 1,3 1000 800 1,2 600 400 1,1 200 0 1 0 2 4 6 8 -50 -25 10 VIN [V] 25 50 75 100 125 150 Tj [C] Max. Transient Thermal Impendance ZthJA = f(tp) @ 6cm; Parameter: D = tp/T 1,8 Zth(JA) [K/W] ID(SC) [A] Typ. Short Circuit Current ID(SC) = f(VIN); VDS = 12 V, Tj = 25 C 0 1,6 1,4 100 D=0.5 0.2 10 0.1 1,2 0.05 1 0.02 1 0.01 0,8 0,6 0,1 0,4 0,2 Single pulse 0 0 2 4 Preliminary Data Sheet V1.0 6 8 0,01 1E-6 10 VIN [V] 10 1E-3 1E0 1E3 tp [sec] 2001-10-26 HITFETa BSP 75N Package Outlines P-SOT223-4-7 (Small Outline Transistor) 1.6 0.1 6.5 0.2 0.1 max +0.2 acc. to DIN 6784 1 2 3.5 0.2 4 0.5 min B 7 0.3 3 0.1 15max A 3 0.28 0.04 2.3 0.7 0.1 4.6 M 0.25 A M B GPS05560 0.25 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information" SMD = Surface Mounted Device Preliminary Data Sheet V1.0 11 Dimensions in mm 2001-10-26 HITFETa BSP 75N Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 76, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Tech-nologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are in-tended to be implanted in the human body, or to support and/ or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Preliminary Data Sheet V1.0 12 2001-10-26