Features
1 of 6
Optimum Technology
Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
InP HBT
LDMOS
RF MEMS
FMS2031-001
10W GaAs pHEMT SPDT SWITCH
The FMS2031-001 is a 10W, Single-pole, Double-throw, (SPDT) GaAs pHEMT reflec-
tive antenna switch. The switch offers excellent power handling capability and har-
monic performance. The FMS2031-001 is designed for use in WiMax, L-, S-, and C-
band wireless applications and WLAN access points where high linearity switching
is required.
31dB Isolation at 2.5GHz
0.5dB Insertion Loss at
2.5GHz
P0.1dB 41dBm at 2.3GHz
Less than 10μA Control Cur-
rent at 35dBm Input Power
Applications
WiMax
L-, S-, and C-band Applica-
tions
WLAN Applications
DS100331
9
Package: 3mmx3mm QFN
FMS2031-001
10W GaA s
pHEMT SPDT
Switch
Parameter Specification Unit Condition
Min. Typ. Max.
Electrical Specifications TAMBIENT=25°C, VCTRL =0V/2.7V, ZIN =ZOUT =50Ω
Insertion Loss 0.5 0.7 dB DC to 3GHz
1dB3GHz to 4GHz
0.9 dB 4GHz to 5GHz
Return Loss 20 dB DC to 4GHz
15 dB 4GHz to 5GHz
10 dB 4.9GHz to 5.9GHz
Isolation 30 32 dB DC to 3GHz
29 dB 3GHz to 4GHz
23 dB 4GHz to 5GHz
PIN at 0.1dB Compression Point 43 dBm 900MHz
41 dBm 2.3 GHz
2nd Harmonic -83 dBc 900MHz, 35dBm CW
-85 -73 dBc 1950MHz, 33dBm CW
3rd Harmonic -85 dBc 900MHz, 35dBm CW
-81 -73 dBc 1950MHz, 33dBm CW
EVM (Contribution Due to Switch) Δ0.5 % 35dBm at 5.9GHz (OFDM WLAN 54)
IIP3 60 dBm 1950MHz, 1MHz spacing, +20dBm per tone
IIP2 87 dBm 1950MHz, 1MHz spacing, +20dBm per tone
Switching Speed: TRISE, TFALL 90 ns 10% to 90% RF and 90% to 10% RF
Switching Speed: TON, TOFF 350 ns 50% control to 10% and 90% RF
Control Current <5 10 μA +35dBm RF input @ 0.96GHz