TLE7182EM
H-Bridge and Dual Half Bridge Driver IC
Data Sheet, Rev 1.1, Sept. 2010
Automotive Power
Data Sheet 2 Rev 1.1, 2010-09-30
H-Bridge and Dual Half Bridge Driver IC
TLE7182EM
Table of Contents
1 Overview 3
2 Block Diagram 4
3 Pin Configuration 5
3.1 Pin Assignment 5
3.2 Pin Definitions and Functions 5
4 General Product Characteristics 7
4.1 Absolute Maximum Ratings 7
4.2 Functional Range 8
4.3 Thermal Resistance 9
4.4 Default State of Inputs 9
5 Description and Electrical Characteristics 10
5.1 MOSFET Driver 10
5.1.1 Driving MOSFET Output Stages 10
5.1.2 MOSFET Output Stages 10
5.1.3 Dead Time and Shoot Through Protection 11
5.1.4 Bootstrap Principle 11
5.1.5 100% D.C. charge pumps 12
5.1.6 Reverse polarity protection of motor bridge 12
5.1.7 Sleep mode 12
5.1.8 Electrical Characteristics 12
5.2 Protection and Diagnostic Functions 16
5.2.1 Short Circuit Protection 16
5.2.2 SCDL Pin Open Detection 16
5.2.3 Vs and VDH Over Voltage Warning 16
5.2.4 VS Under Voltage Shutdown 16
5.2.5 VREG Under Voltage Warning 16
5.2.6 Over Temperature Warning 17
5.2.7 Over Current Warning 17
5.2.8 Passive Gxx Clamping 17
5.2.9 ERR Pin 17
5.2.10 Electrical Characteristics 19
5.3 Shunt Signal Conditioning 21
5.3.1 Electrical Characteristics 21
6 Application Information 23
6.1 Layout Guide Lines 25
6.2 Further Application Information 25
7 Package Outlines 26
8 Revision History 27
Table of Contents
PG-SSOP-24
Type Package Marking
TLE7182EM PG-SSOP-24 TLE7182EM
Data Sheet 3 Rev 1.1, 2010-09-30
H-Bridge and Dual Half Bridge Driver IC
TLE7182EM
1Overview
Features
• Drives 4 N-Channel Power MOSFETs
• Separate control input for each MOSFET
• Unlimited D.C. switch on time of Low and Highside MOSFETs
• 0 …95% at 20kHz & 100% Duty cycle of High Side MOSFETs
• 0 ... 100 % Duty cycle of Low Side MOSFETs
• Additional output to drive a reverse polarity protection N-MOSFET
• Current sense OPAMP
• Low quiescent current mode
• Internal shoot through protection and minimum internal dead time option
• 1 bit diagnosis / ERR
• Over current warning based on current sense OPAMP with fixed warning level
• Analog adjustable Short Circuit Protection levels via SCDL pin with open pin detection and SCD deactivation
• Over temperature warning
• Over voltage warning
• Under voltage warning and shutdown
• Green Product (RoHS compliant)
• AEC Qualified
Description
The TLE7182EM is a H-bridge driver IC dedicated to control 4 N-channel MOSFETs typically forming the converter
for a high current DC motor drives in the automotive sector. It incorporates several protection features such as
over current and short circuit detection as well as under-, over voltage and over temperature diagnosis.
The TLE7182EM perfectly fits for driving 2 valves or solenoids too.
Typical applications are fans, pumps and electric power steering. The TLE7182EM is designed for a 12V power
net.
Table 1 Product Summary
Specified operating voltage VSOP 7.0 V … 34 V
Junction temperature Tj-40 °C .. 150°C
Maximum output source resistance RSou 13.5 Ω
Maximum output sink resistance RSink 9 Ω
maximum quiescent current1)
1) typical value at Tj=25°CC
IQVS 8 µA
H-Bridge and Dual Half Bridge Driver IC
TLE7182EM
Block Diagram
Data Sheet 4 Rev 1.1, 2010-09-30
2 Block Diagram
Figure 1 Block diagram TLE7182EM
ENA
BH1
SH1
GH1
GL1
SH2
GH2
GL2
VREG
VREG
Floating HS driver
Short circuit detection
Floating LS driver
Short circuit detection
Floating HS driver
Short circuit detection
Floating LS driver
Short circuit detection
L
E
V
E
L
S
H
I
F
T
E
R
Diagnostic logic
Under voltage
Over voltage
Over current
Overtemperature
Short circuit
Reset
____
ERR
ISO
___
IH2
IL2
Input control
Shoot through
protection
dead time
SCDL
GND
BH2
VS
IL1
VDH
SL
ISP
ISN
Charge
pump
HS1
Charge
pump
HS2 RPP
___
IH1
RPP
Shunt signal conditioning
Over current detection
Data Sheet 5 Rev 1.1, 2010-09-30
H-Bridge and Dual Half Bridge Driver IC
TLE7182EM
Pin Configuration
3 Pin Configuration
3.1 Pin Assignment
Figure 2 Pin Configuration
3.2 Pin Definitions and Functions
# of
Pins
Symbol Function
1 BH2 Pin for + terminal of the bootstrap capacitor of phase 2
2 GH2 Output pin for gate of high side MOSFET 2
3 SH2 Pin for source connection of high side MOSFET 2
4 GL2 Output pin for gate of low side MOSFET 2
5 VDH Voltage input common drain high side for short circuit detection
6 RPP charge pump output for reverse polarity protection of the motor bridge
7 VS Pin for supply voltage
8 VREG Output of supply for driver output stage - connect to a capacitor
9 ENA Input pin for reset of ERR registers, active switch off of external MOSFETs and low
quiescent current mode, set HIGH to enable operation
10 ISN Input for OPAMP + terminal
11 ISP Input for OPAMP - terminal
12 ISO Output of OPAMP
13 IH2 Input for high side switch 2 (active low)
14 IL2 Input for low side switch 2 (active high)
15 IH1 Input for high side switch 1 (active low)
16 IL1 Input for low side switch 1 (active high)
BH1
GH1
SH1
GL1
SL
GND
SCDLVs
VREG
ENA
ISN
ISP
ISO
BH2
GH2
SH2
GL2
VDH
RPP
___
ERR
IL1
___
IH1
IL2
___
IH2
18
17
16
15
14
13
24
23
22
21
20
19
1
2
3
4
5
6
7
8
9
10
11
12
H-Bridge and Dual Half Bridge Driver IC
TLE7182EM
Pin Configuration
Data Sheet 6 Rev 1.1, 2010-09-30
17 ERR Push pull output stage
18 SCDL Input pin for adjustable Short Circuit Detection function and SCD deactivation
19 GND Ground pin
20 SL Pin for common source of lowside MOSFETs
21 GL1 Output pin for gate of low side MOSFET 1
22 SH1 Pin for source connection of high side MOSFET 1
23 GH1 Output pin for gate of high side MOSFET 1
24 BH1 Pin for + terminal of the bootstrap capacitor of phase 1
Tab Tab should be connected to GND
# of
Pins
Symbol Function
Data Sheet 7 Rev 1.1, 2010-09-30
H-Bridge and Dual Half Bridge Driver IC
TLE7182EM
General Product Characteristics
4 General Product Characteristics
4.1 Absolute Maximum Ratings
Absolute Maximum Ratings 1)
40 °C ≤ Tj ≤ 150 °C; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified)
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Max.
Voltages
4.1.1 Supply voltage at VS VVS -0.3 45 V –
4.1.2 Supply voltage at VS VVSRP -4.0 45 V RVS≥10Ω
4.1.3 Voltage range at VDH VVDH -0.3 55 V –
4.1.4 Voltage range at RPP VRPP -0.3 55 V –
4.1.5 maximum current at RPP IRPP -25 25 mA –
4.1.6 Voltage range at ENA VENA -0.3 45 V –
4.1.7 Voltage range at SCDL VSCDL -0.3 6 V –
4.1.8 Voltage range at IH1, IL1, IH2, IL2 VDPI -0.3 6 V –
4.1.9 Voltage range at ERR, ISO VDPO -0.3 6 V –
4.1.10 Voltage range at ISP, ISN VOPI -5.0 5.0 V –
4.1.11 Voltage range at VREG VVREG -0.3 15 V –
4.1.12 Voltage range at BHx VBH -0.3 55 V –
4.1.13 Voltage range at GHx VGH -0.3 55 V –
4.1.14 Voltage range at GHx VGHP -7.0 55 V tP<1µs; f=50kHz
4.1.15 Voltage range at SHx VSH -2.0 45 V –
4.1.16 Voltage range at SHx VSHP -7.0 45 V tP<1µs; f=50kHz
4.1.17 Voltage range at GLx VGL -0.3 18 V –
4.1.18 Voltage range at GLx VGLP -7.0 18 V tP<0.5µs;
f=50kHz
4.1.19 Voltage range at SL VSL -1.0 5.0 V –
4.1.20 Voltage range at SL VSLP -7.0 5.0 V tP<0.5µs;
f=50kHz;
CBS≥330nF
4.1.21 Voltage difference Gxx-Sxx VGS -0.3 15 V –
4.1.22 Voltage difference BHx-SHx VBS -0.3 15 V –
Temperatures
4.1.23 Junction temperature Tj-40 150 °C–
4.1.24 Storage temperature Tstg -55 150 °C–
4.1.25 Lead soldering temperature
(1/16’’ from body)
Tsol –260°C–
4.1.26 Peak reflow soldering temperature2) Tref –260°C–
Power Dissipation
4.1.27 Power Dissipation (DC) Ptot –2W–
ESD Susceptibility
4.1.28 ESD Resistivity3) VESD –2kV
H-Bridge and Dual Half Bridge Driver IC
TLE7182EM
General Product Characteristics
Data Sheet 8 Rev 1.1, 2010-09-30
Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are
not designed for continuous repetitive operation.
4.2 Functional Range
The PWM frequency is limited by thermal constraints and the maximum duty cycle (minimum charging time of
bootstrap capacitor).
4.1.29 CDM VCDM –1kV
1) Not subject to production test, specified by design.
2) Reflow profile IPC/JEDEC J-STD-020C
3) ESD susceptibility HBM according to EIA/JESD 22-A 114B
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Max.
4.2.1 Specified supply voltage range VVS1 7.0 34 V –
4.2.2 supply voltage range1)
1) operation above 34V limited by max. allowed power dissipation and max. ratings
VVS2 5.5 45 V VVS<7V reduced
functionality
4.2.3 Quiescent current at VS IQVS1 –8 µAVVS,VVDH=12V;
ENA=Low; Tj=25°C
4.2.4 Quiescent current at VS IQVS2 –10µAVVS,VVDH<15V;
ENA=Low; Tj≤85°C
4.2.5 Quiescent current at VDH IQVDH1 –8 µAVVS,VVDH=12V;
ENA=Low; Tj=25°C
4.2.6 Quiescent current at VDH IQVDH2 –10µAVVS,VVDH<15V;
ENA=Low; Tj≤85°C
4.2.7 Supply current at Vs (device
enabled)2)
2) Current can be higher, if driver output stages are unsupplied
IVs(1) – 22 mA no switching
4.2.8 Supply current at Vs (device
enabled)
IVs(2) –45mA4xQGSxfPWM≤20mA
; VVS=7.0..34V
4.2.9 D.C. switch on time of output
stages
DDC –∞s–
4.2.10 Duty cycle Highside output stage3)
3) max. limit of D.C. will increase, if fPWM or external gate charge of the MOSFETs is reduced
DHS 095%fPWM=20kHz;
continuous
operation;
CBS ≥330nF
4.2.11 Duty cycle Lowside output stage DLS 0100%–
Absolute Maximum Ratings (cont’d)1)
40 °C ≤ Tj ≤ 150 °C; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified)
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Max.
Data Sheet 9 Rev 1.1, 2010-09-30
H-Bridge and Dual Half Bridge Driver IC
TLE7182EM
General Product Characteristics
Note: Within the functional range the IC operates as described in the circuit description. The electrical
characteristics are specified within the conditions given in the related electrical characteristics table.
4.3 Thermal Resistance
Note: This thermal data was generated in accordance with JEDEC JESD51 standards. For more information, go
to www.jedec.org.
4.4 Default State of Inputs
Table 2 Default State of Inputs (if left open)
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Typ. Max.
4.3.1 Junction to Case1)
1) Not subject to production test, specified by design.
RthJC ––5K/W–
4.3.2 Junction to Ambient1) RthJA –35–K/W
2)
2) Exposed Heatslug Package use this sentence: Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural
convection on FR4 2s2p board; The Product (Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner
copper layers (2 x 70µm Cu, 2 x 35µm Cu). Where applicable a thermal via array under the exposed pad contacted the first
inner copper layer.
Characteristic State Remark
Default state of IHx High High side MOSFETs off
Default state of ILx Low Low side MOSFETs off
Default state of ENA Low Output stages disabled device in sleep
mode
Default state of SCDL OPEN Short circuit detection deactivation &
warning
H-Bridge and Dual Half Bridge Driver IC
TLE7182EM
Description and Electrical Characteristics
Data Sheet 10 Rev 1.1, 2010-09-30
5 Description and Electrical Characteristics
5.1 MOSFET Driver
5.1.1 Driving MOSFET Output Stages
The TLE7182EM incorporates 2 high side and low side output stages for 4 external MOSFETs.
Unlike other H-Bridge drivers the TLE7182EM offers 4 independent control inputs to control the MOSFETs
individually. However, the control inputs for the Highs Side MOSFETs IHx are inverted. Hence, the control inputs
for High Side IHx and Low Side MOSFETs ILx of the same half bridge can be tight together to control one half
bridge by one control signal. To avoid shoot through currents within the half bridges, a minimum dead time is
provided by the TLE7182EM. Minimum dead time is only generated, if the short circuit detection is activated.
If the TLE7182EM drives a load in between the high side MOSFET and the low side MOSFET or the driver is used
to drive 4 low side MOSFETs, the short circuit detection and the minimum dead time has to be deactivated by
pulling the SCDL pin to 5V.
For more details about the dead time please see Chapter 5.1.3.
Table 3 and Table 4 show the differed states of the output stages subject to the input conditions for activated and
deactivated shout through protection.
Table 3 Truth table (shoot through active)
Table 4 Truth table (shoot through inactive)
5.1.2 MOSFET Output Stages
The six push-pull MOSFET driver stages of the TLE7182EM are realized as separate floating blocks. This means
that the output stage is follows the individual MOSFET source voltages and so ensuring stable MOSFET driving
even in harsh electrical environment.
All 4 output stages have the same output power and thanks to the used bootstrap principle they can be switched
all up to high frequencies.
Each output stage has its own short circuit detection block. For more details about short circuit detection see
Chapter 5.2.1.
ENA IL1 IH1 IL2 IH2 Lowside switch1 Highside switch1 Lowside switch2 Highside switch2
0 x x x x OFF OFF OFF OFF
1 0 1 0 1 OFF OFF OFF OFF
1 0 0 0 0 OFF ON OFF ON
11100ON OFF OFF ON
1 0 0 1 1 OFF ON ON OFF
11111ON OFF ON OFF
ENA IL1 IH1 IL2 IH2 Lowside switch1 Highside switch1 Lowside switch2 Highside switch2
0 x x x x OFF OFF OFF OFF
1 0 1 0 1 OFF OFF OFF OFF
1 0 0 0 1 OFF ON OFF OFF
11001ON ON OFF OFF
1 0 1 0 0 OFF OFF OFF ON
10110OFF OFF ON ON
Data Sheet 11 Rev 1.1, 2010-09-30
H-Bridge and Dual Half Bridge Driver IC
TLE7182EM
Description and Electrical Characteristics
Figure 3 Block Diagram of Driver Stages including Short Circuit Detection
5.1.3 Dead Time and Shoot Through Protection
In bridge applications it has to be assured that the external high side and low side MOSFETs are not “on” at the
same time, connecting directly the battery voltage to GND.
In TLE7182EM a minimum dead time applied. It is fixed internally and can not be programmed.
If an exact dead time of the bridge is needed, the use of the µC PWM generation unit is recommended.
In addition to this dead time, the TLE7182EM provides a locking mechanism, avoiding that both external
MOSFETs of one half bridge can be switched on at the same time. This functionality is called shoot through
protection. If the command to switch on both high and low side switches in the same half bridge is given at the
input pins, the command will be ignored. The outputs will stay in the situation like before the conflicting input.
The Shoot through protection and the dead time of the TLE7182EM will be deactivated, if a voltage of 5V is applied
at pin SCDL. The deactivation of the shoot through protection is necessary to drive valves or solenoids which are
designed in between the Lowside and Highside MOSFET of one half bridge or 4 separate low side MOSFETs.
For more detailed information how to drive valves or solenoid in between one half bridge please see Figure 7.
5.1.4 Bootstrap Principle
The TLE7182EM provides a bootstrap based supply for its high side output stages.
The bootstrap capacitors are charged by switching on the external low side MOSFETs, connecting the bootstrap
capacitor to GND. Under this condition the bootstrap capacitor will be charged from the VREG capacitor via the
integrated bootstrap diode. If the low side MOSFET is switched off and the high side MOSFET is switched on, the
bootstrap capacitor will float together with the SHx voltage to the supply voltage of the bridge. Under this condition
the supply current of the high side output stage will discharge the bootstrap capacitor. This current is specified.
GHx
SHx
VDH
V
SCP
+
-
Level
shifter
Floating HS dri ver 2x
GLx
SL
V
SCP
+
-
Level
shifter
Floating LS dr iver 2x
VREG
Voltage regulator
BHx
VREG
ENAVS
Error logic
Reset
Power On Reset
____
ERR
short cir cuit fi lter
SCD SCD
SCD
Input Logic
Shoot Through
Protecti on
Dead Time
loc k /
unlock
IH1
IL2
ON / OFF
ON / OFF
GND
IL1
Shor t Ci rcui t
Detecti on Level
SCDL
VDH
VREG
blanki ng
IH2
Char ge pum p
RPP
H-Bridge and Dual Half Bridge Driver IC
TLE7182EM
Description and Electrical Characteristics
Data Sheet 12 Rev 1.1, 2010-09-30
The size of the capacitor together with this current will determine how long the high side MOSFET can be kept on
without recharging the bootstrap capacitor.
5.1.5 100% D.C. charge pumps
100% D.C. charge pumps are implemented for each high side output stage. Therefore the high side output stages
can be switch on for an unlimited time. These integrated charge pumps can handle leakage currents which will be
caused by external MOSFETs and the TLE7182EM itself. They are not strong enough to drive a 99% duty cycle
for a longer time. the charge pumps are running when the driver is not in sleep mode and assure that the bootstrap
capacitors are charged as long as the user does not apply critical duty cycle for a longer time.
5.1.6 Reverse polarity protection of motor bridge
The TLE7182EM provides an additional RPP pin to protect motor bridge for reverse polarity. This RPP pin can
drive an additional external N-channel power MOSFET designed in between battery and the motor bridge. The
RPP pin is internally supplied by the two integrated 100% D.C. charge pumps. They are especially designed to
handle additional current which is needed to drive a the gate charge of the reverse polarity MOSFET. The
guarantied output current of the charge pumps is specified.
5.1.7 Sleep mode
If ENA pin is set to low, the ERR flag will be set to low and the output stages will be switched off.
After ENA pin is kept low for tLQM the sleep mode of the Driver IC will be activated.
In Sleep mode the complete chip is deactivated. This means the internal supply structure of the TLE7182EM will
be switched off. This mode is designed for lowest current consumption from the power net of the car. The passive
clamping is active. For details see the description of passive clamping, see Chapter 5.2.8.
The TLE7182EM will wake up, if ENA is set to high.The ENA pin is 45V compatible, so ENA can be directly be
connected to the ignition key signal KL15.
5.1.8 Electrical Characteristics
Electrical Characteristics MOSFET Drivers
VS = 7.0 to 34V, Tj = -40 to +150°C all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Typ. Max.
Control inputs
5.1.1 Low level input voltage of Ixx VI_LL ––1.0V–
5.1.2 High level input voltage of Ixx VI_HL 2.0––V–
5.1.3 Input hysteresis of Ixx dVI 100 200 – mV –
5.1.4 ILx pull-down resistor to GND RIL 320 540 770 kΩVVS=0V and
VDH=0V or open
5.1.5 ILx pull-down resistor to GND RIL 19 32 50 kΩVVS or VDH >5.0V
5.1.6 IHx pull-up resistor to internal VDD RIH 30 – 80 kΩ–
5.1.7 Low level input voltage of ENA VE_LL – – 0.75 V –
5.1.8 High level input voltage of ENA VE_HL 2.1––V–
5.1.9 Input hysteresis of ENA dVE 50 200 – mV –
5.1.10 ENA pull-down resistor to GND RIL 70 125 200 kΩ–
Data Sheet 13 Rev 1.1, 2010-09-30
H-Bridge and Dual Half Bridge Driver IC
TLE7182EM
Description and Electrical Characteristics
MOSFET driver output
5.1.11 Output source resistance RSou 2–13.5ΩILoad=-20mA
5.1.12 Output sink resistance RSink 2–9.0ΩILoad=20mA
5.1.13 High level output voltage Gxx vs.
Sxx
VGxx1 –1115V13.5V≤VVS≤34V;
ILoad=0mA
5.1.14 High level output voltage Gxx vs.
Sxx
VGxx2 –1113.5V13.5V≤VVS≤34V;
CLoad=20nF;
D.C.=50%;
fPWM=20kHz
5.1.15 High level output voltage GHx vs.
SHx1)
VGHx3 –VVS-1.5 – V 7.0V<VVS<13.5V;
CLoad=20nF;
D.C.=50%;
fPWM=20kHz
5.1.16 High level output voltage GLx vs.
GND1)
VGLx3 –VVS-0.5 – V 7.0V<VVS<13.5V;
CLoad=20nF;
fPWM=20kHz &
D.C.=50%;
or D.C=100%
5.1.17 High level output voltage GHx vs.
SHx1)2)
VGHx4 5.0
+Vdiode
––VVVS=7.0V;
CLoad=20nF;
D.C.=95%;
fPWM=20kHz;
passive
freewheeling
5.1.18 High level output voltage GHx vs.
SHx1)
VGHx5 5.0––VVVS=7.0V;
CLoad=20nF;
D.C.=95%;
fPWM=20kHz
5.1.19 High level output voltage GLx vs.
SLx1)
VGLx5 6.0––VVVS=7.0V;
CLoad=20nF;
D.C.=95%;
fPWM=20kHz
5.1.20 High level output voltage GHx vs.
SHx1)
VGHx5 10 – – V 7.0V≤VVS≤13.5V;
CLoad=20nF;
D.C.=100%
5.1.21 High level output voltage GLx vs.
SLx1)
VGLx5 6.5––VVVS=7.0V;
CLoad=20nF;
D.C.=100%
5.1.22 Rise time trise –250–nsCLoad=11nF;
RLoad=1Ω;
VVS=7V;
20-80%
5.1.23 Fall time tfall – 200 – ns
Electrical Characteristics MOSFET Drivers
VS = 7.0 to 34V, Tj = -40 to +150°C all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Typ. Max.
H-Bridge and Dual Half Bridge Driver IC
TLE7182EM
Description and Electrical Characteristics
Data Sheet 14 Rev 1.1, 2010-09-30
5.1.24 High level output voltage (in
passive clamping)1)
VGxxUV – – 1.2 V Sleep mode or
VS_UVLO
5.1.25 Pull-down resistor at BHx to GND RBHUVx ––85kΩSleep mode or
VS_UVLO
5.1.26 Pull-down resistor at VREG to GND RVRUV ––30kΩSleep mode or
VS_UVLO
5.1.27 Bias current into BHx IBHx ––150µAVCBS>5V;
no switching
5.1.28 Bias current out of SHx ISHx –40–µAVSHx=VSL;
ENA=HIGH;
affected highside
output stage static
on;
VCBS>5V
5.1.29 Bias current out of SL ISL ––1.4mA0≤VSHx≤VVS+1V;
ENA=HIGH;
no switching;
VCBS>5V
Dead time & input propagation delay times
5.1.30 Min. internal dead time tDT_MIN 0.08 0.11 0.2 µs –
5.1.31 Dead time deviation between
channels
dtDT2 -15 – 15 % –
5.1.32 Dead time deviation between
channels LSoff -> HS on
dtDT2 -12 – 12 % –
5.1.33 Dead time deviation between
channels HSoff -> LS on
dtDT2 -12 – 12 % –
5.1.34 Input propagation time (low on) tP(ILN) 0 100 200 ns CLoad=10nF;
RLoad=1Ω
5.1.35 Input propagation time (low off) tP(ILF) 0 100 200 ns
5.1.36 Input propagation time (high on) tP(IHN) 0 100 200 ns
5.1.37 Input propagation time (high off) tP(IHF) 0 100 200 ns
5.1.38 Absolute input propagation time
difference between above
propagation times
tP(diff) – 50 100 ns
VREG
5.1.39 VREG output voltage VVREG 11 12.5 14 V VVS≥13.5V;
ILoad=-35mA
5.1.40 VREG over current limitation IVREGOCL 100 – 500 mA –3)
5.1.41 Voltage drop between Vs and
VREG
VVsVREG ––0.5VVVS≥7V;
ILoad=-35mA;
Ron operation
Electrical Characteristics MOSFET Drivers
VS = 7.0 to 34V, Tj = -40 to +150°C all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Typ. Max.
Data Sheet 15 Rev 1.1, 2010-09-30
H-Bridge and Dual Half Bridge Driver IC
TLE7182EM
Description and Electrical Characteristics
100% D.C. charge pump
5.1.42 Charge pump frequency1) fCP –21–MHz–
Motor bridge reverse polarity protection output
5.1.43 High level output voltage RPP vs.
VS
VRPP1 –1115VILoad=0µA
5.1.44 High level output voltage RPP vs.
VS
VRPP2 –1112.5VILoad≥-30µA
5.1.45 D.C. output current at RPP IRPP1 –-110-150µAVRPP≥10V;
Lowside on
5.1.46 Rise time1) tRPPrise –12msCLOAD=10nF
5.1.47 Rise time1) tRPPrise –1020µsCLOAD=100pF
ENA and Low quiescent current mode
5.1.48 ENA propagation time to output
stages switched off
tPENA_H-L –2.03.0µs–
5.1.49 Low time of ENA signal without
clearing error register
tRST0 ––1.2µs–
5.1.50 High time of ENA signal after ENA
rising edge for error logic active
tRST1 45.757µs–
5.1.51 go to sleep time tsleep 310 415 540 µs –
5.1.52 wake up time twake –50100µsCREG=2.2µF;
CBS=330nF
1) Not subject to production test, specified by design.
2) Vdiode is the bulk diode of the external low side MOSFET
3) normally no error flag; Error flag might by triggered by under voltage VREG caused by very high load current
Electrical Characteristics MOSFET Drivers
VS = 7.0 to 34V, Tj = -40 to +150°C all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Typ. Max.
H-Bridge and Dual Half Bridge Driver IC
TLE7182EM
Data Sheet 16 Rev 1.1, 2010-09-30
5.2 Protection and Diagnostic Functions
5.2.1 Short Circuit Protection
The TLE7182EM provides a short circuit protection for the external MOSFETs by monitoring the drain-source
voltage of the external MOSFETs.
This monitoring of the short circuit detection for a certain external MOSFET is active as soon as the corresponding
driver output stage is set to “on” and the dead time and the blanking time are expired.
The blanking time starts when the dead time has expired and assures that the switch on process of the MOSFET
is not taken into account. It is recommended to keep the switching times of the MOSFETs below the blanking time.
The short circuit detection level is adjustable in an analog way by the voltage setting at the SCDL pin. There is a
1:1 translation between the voltage applied to the SCDL pin and the drain-source voltage limit. E.g. to trigger the
SCD circuit at 1 V drain-source voltage, the SCDL pin must be set to 1 V. The drain-source voltage limit can be
chosen between 0.2 ... 2 V.
If after the expiration of the blanking time the drain source voltage of the observed MOSFET is still higher then the
SCDL level, the SCD filter time tSCP starts to run. A capacitor is charged with a current. If the capacitor voltage
reaches a specific level (filter time tSCP), the error signal is set and the IC goes into SCDL Error Mode. If the SCD
condition is removed before the SC is detected, the capacitor is discharged with the same current. The discharging
of the capacitor happens as well when the MOSFET is switched off. It has to be considered that the high side and
the low side output of one phase are working with the same capacitor.
The Short Circuit protection of the TLE7182EM will be deactivated, if 5V is applied at pin SCDL.
5.2.2 SCDL Pin Open Detection
An integrated structure at the SCDL pin assures that in case of an open pin the SCDL voltage is pulled to a medium
voltage level. The external MOSFETs are actively switched off and an ERR flag is set. This error is self-clearing.
5.2.3 Vs and VDH Over Voltage Warning
The TLE7182EM has an integrated over voltage warning to minimize risk of destruction of the IC at high supply
voltages caused by violation of the maximum ratings. For the over voltage warning the voltage is observed at the
pin VS and VDH. If the voltage level has reached, the fixed over voltage threshold VOVW for the filter time tOV, a
warning at ERR pin is set and TLE7182EM will go in normal operation with warning.
The over voltage warning is self clearing. If the voltage at pin VS and VDH returns into the specified voltage range,
the Error register will be cleared and TLE7182EM returns to normal operation mode.
It is the decision of the user, if and how to react on the over voltage warning.
5.2.4 VS Under Voltage Shutdown
The TLE7182EM has an integrated VS Under Voltage Shutdown, to assure that the behavior of the complete IC
is predictable in all supply voltage ranges. As soon as the under voltage threshold VUVVR is reached for a specified
filter time the TLE7181EM is in VS_UVLO error mode. The error signal will be set and output stages, voltage
regulator and charge pump will be switched off so the IC will go into sleep mode. An enable is necessary to restart
the TLE7181EM.
5.2.5 VREG Under Voltage Warning
The TLE7182EM has an integrated under voltage warning detection at VREG. If the supply voltage at VREG
reaches the VREG under voltage threshold VUVVR, a warning at ERR pin is set and the TLE7182EM will go into
VREG error mode. In case of VREG error mode all output stages will actively switched off to prevent low gate
source voltages at the power MOSFETs causing high RDSon. If supply voltage at the VREG pin recovers; the
error flag will be cleared and the TLE7182EM will return in normal operation mode.
Data Sheet 17 Rev 1.1, 2010-09-30
H-Bridge and Dual Half Bridge Driver IC
TLE7182EM
5.2.6 Over Temperature Warning
The TLE7182EM provides an integrated digital over temperature warning to minimize risk of destruction of the IC
at high temperature. The temperature will be detected by a embedded sensor. During over temperature warning
the ERR signal is set and the TLE7182EM is in normal operation mode with warning.
The over temperature warning is self clearing. So if temperature is below Tj(PW) -dTj(OW), the warning will be cleared
and TLE7182EM returns to normal operation mode.
It is the decision of the user to react on the over temperature warning.
5.2.7 Over Current Warning
The TLE7182EM offers an integrated over current detection. The output signal of the current sense OpAmp will
be monitored. If the output signal reaches the specified voltage threshold VOCTH for a certain time, over current will
be detected. After the comparator the filter time tOC is implemented to avoid false triggering caused by overswing
of the current sense signal. The ERR pin will be set to low and the TLE7182EM will go into normal operation mode
with warning.
The error signal disappears as soon as the current decreases below the over current threshold VOCTH. The error
signal disappears as well when the current commutates from the low side MOSFET to the associated high side
MOSFET and is no longer flowing over the shunt resistor.
It is the decision of the user to react on the over current signal by modifying input patterns.
5.2.8 Passive Gxx Clamping
If VS Under Voltage shutdown is detected or the device is in Sleep Mode, a passive clamping is active as long as
the voltage at VS or VDH is higher than 3V. Even below 3V it is assured that the MOSFET driver stage will not
switch on the MOSFET actively.
The passive clamping means that the BHx and the VREG pin are pulled to GND with specified pull down resistors.
Together with the intrinsic diode of the push stage of the output stages which connect the gate output to BHx
respectively VREG, this assures that the gate of the external MOSFETs are not floating undefined.
5.2.9 ERR Pin
The TLE7182EM has a status pin to provide diagnostic feedback to the µC. The logical output of this pin is a push
pull output stage with an integrated pull-down resistor to GND (see Figure 4).
Reset of error registers and Disable
The TLE7182EM can be reset by the enable pin ENA. If the ENA pin is pulled to low for a specified minimum time,
the error registers are cleared. ERR output is still set to low. After the next rising edge at ENA pin ERR pin will be
set to high and no error condition is applied.
H-Bridge and Dual Half Bridge Driver IC
TLE7182EM
Data Sheet 18 Rev 1.1, 2010-09-30
Figure 4 Structure of ERR output
Table 5 Overview of error condition
Table 6 Prioritization of Errors
Error
Logic
µC
Interface_ µC
GND
internal
Internal
5V
ERR
GND
TLE718xEM
ERR Driver conditions Driver action Restart
High no errors Fully functional –
Low Over temperature Warning only Self clearing
Low Over voltage VS/VDH Warning only Self clearing
Low Over current OPAMP Warning only Self clearing
Low Under voltage error VREG All MOSFETs actively
switched off
Self clearing
Low Under voltage shutdown based
on VS
MOSFET, charge pump,
Vreg switched off
Self clearing
restart when enable high1)
Low SCDL open pin All MOSFETs actively
switched off
Self clearing
Low Short circuit detection All MOSFETs actively
switched off
Reset at ENA needed
Low Go to sleep mode All MOSFETs actively
switched off
immediate restart when
ENA goes high
Low Wake up mode start up –
1) When SC detected, reset with ENA necessary
Priority Errors and Warnings
0 Under voltage lockout at Vs (VS_UVLO)
1 Short circuit detection error (SCD)
SCDL pin open warning (SCDLPOD)
2 Under voltage detection VREG (UV_VREG)
Over voltage detection warning (OVD)
Over temperature warning (OTD)
Over current warning (OCD)
Data Sheet 19 Rev 1.1, 2010-09-30
H-Bridge and Dual Half Bridge Driver IC
TLE7182EM
5.2.10 Electrical Characteristics
Electrical Characteristics - Protection and diagnostic functions
VS = 7.0 to 34V, Tj = -40 to +150°C, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Typ. Max.
Short circuit protection
5.2.1 Short circuit protection detection
level input range
VSCDL 0.2 – 2.0 V programmed by
SCDL pin
5.2.2 Short circuit protection detection
accuracy
ASCP1 -50 – +50 % 0.2V≤ VSCDL≤0.3V
5.2.3 Short circuit protection detection
accuracy
ASCP2 -30 – +30 % 0.3V≤ VSCDL≤1.2V
5.2.4 Short circuit protection detection
accuracy
ASCP3 -10 – +10 % 1.2V≤ VSCDL≤2.0V
5.2.5 Filter time of short circuit protection tSCP(off) 2.5 3.5 4.5 µs –
5.2.6 Filter time and blanking time of
short circuit protection
tSCPBT 468µs–
5.2.7 Internal pull-up resistor SCDL to 3V RSCDL 180 300 475 kΩ–
5.2.8 SCDL open pin detection level VSCPOP 2.1 – 3.2 V –
5.2.9 Filter time of SCDL open pin
detection
tSCPOP 1.5 2.5 3.5 µs –
5.2.10 SCDL open pin detection level
hysteresis1)
VSCOPH –0.3–V–
5.2.11 Threshold voltage for deactivation
of:
- SC detection
- dead-time generation
- shoot-through protection
VSCPDIS 4.5––V–
5.2.12 Filter time of SCD deactivation tSCPDIS 1.0 2.0 3.1 µs –
Over- and under voltage monitoring
5.2.13 Over voltage warning at Vs and/or
VDH
VOVW 34.5 36.5 38.5 V VVS and/or VVDH
increasing
5.2.14 Over voltage warning hysteresis for
Vs and/or VDH
VOVWhys 2.1 3.1 4.1 V –
5.2.15 Over voltage warning filter time for
Vs and/or VDH
tOV 13 19 25 µs –
5.2.16 Under voltage shutdown at Vs VUVVR 4.5 5.0 5.5 V VVS decreasing
5.2.17 Under voltage shutdown filter time
for VS1)
tUVLO –20–µs–
5.2.18 Under voltage warning at VREG VUVVR 5.5 6.0 6.5 V VVS decreasing
5.2.19 Under voltage diagnosis filter time
for VREG
tUVVR 10 – 30 µs –
5.2.20 Under voltage hysteresis at VREG VUWRhys –0.5–V–
H-Bridge and Dual Half Bridge Driver IC
TLE7182EM
Data Sheet 20 Rev 1.1, 2010-09-30
Temperature monitoring
5.2.21 Over temperature warning Tj(PW) 160 170 180 °C –
5.2.22 Hysteresis for over temperature
warning
dTj(OW) 10 – 20 °C –
Over current detection
5.2.23 Over current detection level VOCTH 4.5 – 4.99 V –
5.2.24 Filter time for over current detection tOC 2.3 – 4.3 µs –
ERR pin2)
5.2.25 ERR output voltage VERR 4.6––VVVS=7V;
5.2.26 Rise time ERR (20 - 80% of internal
5V)
tf(ERR) ––3µsCLOAD=1nF;
5.2.27 Internal pull-down resistor ERR to
GND
Rf(ERR) 60 100 170 kΩ–
1) Not subject to production test, specified by design.
2) ERR pin and Reset & Enable functional between VVS=6 ... 7V, but characteristics might be out of specified range
Electrical Characteristics - Protection and diagnostic functions (cont’d)
VS = 7.0 to 34V, Tj = -40 to +150°C, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Typ. Max.
Data Sheet 21 Rev 1.1, 2010-09-30
H-Bridge and Dual Half Bridge Driver IC
TLE7182EM
5.3 Shunt Signal Conditioning
The TLE7182EM incorporates a fast and precise operational amplifier for conditioning and amplification of the
current sense shunt signal. The gain of the OpAmp is adjustable by external resistors within a range higher than 5.
The usage of higher gains in the application might be limited by required settling time and band width.
It is recommended to apply a small offset to the OpAmp, to avoid operation in the lower rail at low currents.
The output of the OpAmp ISO is not short-circuit proof.
Figure 5 Shunt Signal Conditioning Block Diagram and Over Current Limitation
Over current warning see Chapter 5.2.7.
5.3.1 Electrical Characteristics
Electrical Characteristics - Current sense signal conditioning
VS = 7.0 to 36V, Tj = -40 to +150°C, gain = 5 to 75, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Typ. Max.
5.3.1 Series resistors RS100 500 1000 Ω–
5.3.2 Feedback resistor
Limited by the output voltage
dynamic range
Rfb 2000 7500 – Ω–
5.3.3 Resistor ratio (gain ratio) Rfb/RS 5––––
5.3.4 Steady state differential input
voltage range across VIN
VIN(ss) -400 – 400 mV –
5.3.5 Input differential voltage (ISP - ISN) VIDR -800 – 800 mV –
5.3.6 Input voltage (Both Inputs - GND)
(ISP - GND) or (ISN -GND)
VLL -800 – 2000 mV –
5.3.7 Input offset voltage of the I-DC link
OpAmp, including temperature drift
VIO – – +/-2 mV RS=500Ω; VCM=0V;
VISO=1.65V;
5.3.8 Input bias current (ISN,ISP to GND) IIB -300 – – µA VCM=0V; VISO=open
5.3.9 Low level output voltage of ISO VOL -0.1 – 0.2 V IOH=3mA
external
RS1
RS2
TLE718xEM
-
+
-
+
VOCTH
ERR
RREF1
RFB
Rshunt
VDD
ISN
ISP ISO
RREF2
RFB=(RREF1 ||RREF2 )
H-Bridge and Dual Half Bridge Driver IC
TLE7182EM
Data Sheet 22 Rev 1.1, 2010-09-30
5.3.10 High level output voltage of ISO VOH 4.75 – 5.2 V IOH=-3mA
5.3.11 Output short circuit current ISCOP 5––mA–
5.3.12 Differential input resistance1) RI100––kΩ–
5.3.13 Common mode input capacitance1) CCM – – 10 pF 10kHz
5.3.14 Common mode rejection ratio at
DC
CMRR =
20*Log((Vout_diff/Vin_diff) *
(Vin_CM/Vout_CM))
CMRR 80 100 – dB –
5.3.15 Common mode suppression2) with
CMS = 20*Log(Vout_CM/Vin_CM)
Freq =100kHz
Freq = 1MHz
Freq = 10MHz
CMS –
62
43
23
–dB
VIN=360mV*
sin(2*π*freq*t);
Rs=500Ω;
Rfb=7500Ω
5.3.16 Slew rate dV/dt –10–V/µsGain≥ 5;
RL=1.0kΩ;
CL=500pF
5.3.17 Large signal open loop voltage gain
(DC)
AOL 80 100 – dB –
5.3.18 Unity gain bandwidth1) GBW 10 20 – MHz RL=1kΩ; CL=100pF
5.3.19 Phase margin 1) FM–50–°Gain≥ 5;
RL=1kΩ; CL=100pF
5.3.20 Gain margin 1) AM–12–dBRL=1kΩ; CL=100pF
5.3.21 Bandwidth BWG 0.7 1.3 – MHz Gain=15;
RL=1kΩ;
CL=500pF;
Rs=500Ω
5.3.22 Output settle time to 98% tset1 – 1 1.8 µs Gain=15;
RL=1kΩ;
CL=500pF;
0.3<VISO< 4.8V;
Rs=500Ω
5.3.23 Output settle time to 98%1) tset2 – 4.6 – µs Gain=75;
RL=1kΩ;
CL=500pF;
0.3<VISO< 4.8V;
Rs=500Ω
1) Not subjected to production test; specified by design
2) Without considering any offsets such as input offset voltage, internal mismatch and assuming no tolerance error in external
resistors.
Electrical Characteristics - Current sense signal conditioning (cont’d)
VS = 7.0 to 36V, Tj = -40 to +150°C, gain = 5 to 75, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Typ. Max.
Data Sheet 23 Rev 1.1, 2010-09-30
H-Bridge and Dual Half Bridge Driver IC
TLE7182EM
Application Information
6 Application Information
Note: The following information is given as a hint for the implementation of the device only and shall not be
regarded as a description or warranty of a certain functionality, condition or quality of the device.
This is the description how the IC is used in its environment…
Figure 6 Application Diagram 1: DC-Brush motor controlled by TLE7182EM
SH1
VBAT
µC
e.g.:
XC2xxx
GH1
GL1
VS
IL1
___
IH1
CVS1
2,2µF
RVS
GND
ISP
IL2
___
IH2
GND
VREG
TLE
7182EM
PGND
____
ERR
ISO
Shunt
RS2
RS1
RFB
ENA
ISN
BH1 CBS1
330nF
RGH1
SH2
GH2
BH2
RGH2
CBS2
330nF
RGL1
GL2
RGL2
L
2,2µH
GND
SL
RREF2
GND
GND
VDH
CREG1
2,2µF
RVDH
SCDL
RREF1
TLS 2
TLS 1
THS2
THS1
RSC1
RSC2
CVS2
10nF
VDD
Vref
CSNH1
RSNH1
CSNL1
RSNL1
CSNL2
RSNL2
CSNH2
RSNH2
CB2
CC2
+
CB1
CC1
+
PGND
PGND
PGND
PGND
RPP
RRPS
4.7kΩ
GND
M
RG
RFB= (RREF1||RREF2)
CIS
50pF
RISO CISO
100pF
CREG2
10nF
H-Bridge and Dual Half Bridge Driver IC
TLE7182EM
Application Information
Data Sheet 24 Rev 1.1, 2010-09-30
Figure 7 Application Diagram 2: 2 inductive loads driven by TLE7182EM
Note: This are very simplified examples of an application circuit. The function must be verified in the real
application.
SH1
VBAT
µC
e.g.:
XC2xxx
GH1
GL1
VS
IL1
___
IH1
CVS1
2,2µF
RVS
GND
ISP
IL2
___
IH2
GND
VREG
TLE
7182EM
PGND
____
ERR
ISO
Shunt
RS2
RS1
RFB
ENA
ISN
BH1 CBS1
330nF
RGH1
SH2
GH2
BH2
RGH2
CBS2
330nF
RGL1
GL2
RGL2
L
2,2µH
GND
SL
RREF2
GND
GND
VDH
CREG1
2,2µF
RVDH
SCDL
RREF1
TLS 2
TLS 1
THS2
THS1
RSC1
RSC2
CVS2
10nF
VDD
Vref
V
CSNH1
RSNH1
CSNL1
RSNL1
CSNL2
RSNL2
CSNH2
RSNH2
CB2
CC2
+
CB1
CC1 +
PGND
PGND
PGND
PGND
V
RPP
GND
RG
RFB= (RREF1||RREF2)
RISO CISO
100pF
CIS
50pF
CREG2
10nF
RRPS
4.7kΩ
Data Sheet 25 Rev 1.1, 2010-09-30
H-Bridge and Dual Half Bridge Driver IC
TLE7182EM
Application Information
6.1 Layout Guide Lines
Please refer also to the simplified application example.
• Two separated bulk capacitors CB should be used - one per half bridge
• Two separated ceramic capacitors CC should be used - one per half bridge
• Each of the two bulk capacitors CB and each of the two ceramic capacitors CC should be assigned to one of
the half bridges and should be placed very close to it
• The components within one half bridge should be placed close to each other: high side MOSFET, low side
MOSFET, bulk capacitor CB and ceramic capacitor CC (CB and CC are in parallel) and the shunt resistor form
a loop that should be as small and tight as possible. The traces should be short and wide
• The connection between the source of the high side MOSFET and the drain of the low side MOSFET should
be as low inductive and as low resistive as possible.
• VDH is the sense pin used for short circuit detection; VDH should be routed (via Rvdh) to the common point
of the drains of the high side MOSFETs to sense the voltage present on drain high side
• SL is the sense pin used for short circuit detection; SL should be routed o the common point of the source of
the low side MOSFETs to sense the voltage present on source low side
• Additional R-C snubber circuits (R and C in series) can be placed to attenuate/suppress oscillations during
switching of the MOSFETs, there may be one or two snubber circuits per half bridge, R (several Ohm) and C
(several nF) must be low inductive in terms of routing and packaging (ceramic capacitors)
• if available the exposed pad on the backside of the package should be connected to GND
6.2 Further Application Information
• For further information you may contact http://www.infineon.com/
H-Bridge and Dual Half Bridge Driver IC
TLE7182EM
Package Outlines
Data Sheet 26 Rev 1.1, 2010-09-30
7 Package Outlines
Figure 8 PG-SSOP-24-4
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e
Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
For further information on alternative packages, please visit our website:
http://www.infineon.com/packages.Dimensions in mm
Data Sheet 27 Rev 1.1, 2010-09-30
H-Bridge and Dual Half Bridge Driver IC
TLE7182EM
Revision History
8 Revision History
Revision Date Changes
1.1 2010-09-30 Datasheet
Max rating of current at RPP pin increased
1.0 2010-09-29 Datasheet
Thermal resistance of package adjusted
Output rise time adjusted
Pull up and pull down resistor values adapted
Dead time values centered
Go to sleep time modified
Filter time of short circuit detection adjusted
SCDL pin open detection description improved
Overview of error condition table improved
Filter time and blanking time of short circuit detection adjusted
SCDL open pin detection level added
Filter time of SCDL open pin detection adjusted
Over voltage warning at Vs and/or VDH centered
Over voltage warning hysteresis for Vs and/or VDH centered
Over voltage warning filter time for Vs and/or VDH centered
ERR output voltage added
OpAmp bandwidth adjusted
0.8 2010-08-31 Preliminary Datasheet
0.7 2009-11-19 Target data sheet
0.6 2008-30-10 Target data sheet
Edition 2010-09-30
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.