Microsemi
Page 1
Copyright 2005
Rev. 0, 2006-03-13
WWW.Microsemi .COM
UM6000 / UM6200/UM6600
POWER PIN DIODES
DESCRIPTION
These series of PIN diodes are designed for
applications requiring small package size
and moderate average power handling
capability. The low capacitance of the
UM6000 and UM6600 allows them to be
used as series switching elements to 1 GHz.
The low resistance of the UM6200 is useful
in applications where forward bias current
must be minimized.
Because of its thick I-region width and long
lifetime the UM6000 and UM6600 have
been used in distortion sensitive and high
peak power applications, including receiver
protectors, TACN, and IFF equipment.
Their low capacitance allows them to be
useful as attenuator diodes at frequencies
greater than 1 GHz. The UM6200 has been
used successfully in switches in which low
insertion loss at low bias current is required.
The “A” style package for this series is the
smallest Microsemi PIN diode package. It has
been used successfully in many microwave
applications using coaxial, microstrip, and
stripline techniques at frequencies beyond X-
Band. The “B” and “E” style leaded packages
offer the highest available power dissipation for a
package this small. They have been used
extensively as series switch elements in
microstrip circuits. The “C” style package
duplicates the physical outline available in
conventional ceramic-metal packages but
incorporates the many reliability advantages of
the Microsemi construction.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Package
Condition
UM6000/UM6600 UM6200
PD θ PD θ
A & C 25 OC Pin Temperature 6 W 25 OC/W 4 W 37.5 oC/W
B & E
½ in. total length to 25 OC Contact
Free Air
2.5 W 60 OC/W
0.5 W
2.0 W 75 oC/W
0.5 W
SM 25
OC End Cap Temperature 4.5 W 27.5OC/W 3.0 W 42.5 oC/W
All 1 us pulse (Single)
UM6000 25 kW
UM6600 13 kW
10 kW
VOLTAGE RATINGS
Reverse Voltage @ 10 uA
100 UM6001 UM6201 UM6601
200 UM6002 UM6202 UM6602
400 - UM6204 -
800 UM6006 - UM6606
1000 UM6010 - UM6610
KEY FEATURES
Voltage ratings to 1000V
Average power dissipation to 6 W
Series resistance as low as 0.4 Ω
Carrier lifetime greater than 1.0 µs
Non cavity design
Thermally matched configuration
Low capacitance at 0 V bias
Low conductance at 0 V bias
Compatible with automatic insertion
equipment
APPLICATIONS/BENEFITS
Isolated stud package available
Surface mount package available
RoHS compliant packaging
available: use UMX6001B, etc.
U
UM
M6
60
00
00
0/
/U
UM
M6
62
20
00
00
0/
/U
UM
M6
66
60
00
0
Microsemi
Page 2
Copyright 2005
Rev. 0, 2006-03-13
WWW.Microsemi .COM
UM6000 / UM6200/UM6600
POWER PIN DIODES
Style “B” Style “SM”
UM6000/UM6200/UM6600
-6
10 -5
10 -4
10 -3
10 -2
10 -1
10 0
10
If (A)
-1
10
0
10
1
10
2
10
3
10
4
10
5
10
Rs (Ohms)
Rs versus If
f = 100 MHz
UM6000
UM6200
UM6600
ELECTRICAL PARAMETERS @ 25°C (unless otherwise specified)
Parameter Symbol Conditions UM6600 UM6000 UM6200 Units
Reverse Current (Max) IR At rated voltage 10 10 10 uA
Series Resistance(Max) RS If = 100 mA, F= 100 MHz 2.5 1.7 0.4 Ohms
Capacitance (Max) CT VR = 100 V, F = 1 MHZ 0.4 0.5 1.1 pF
Parallel Resistance(Min) Rp VR = 100 V, F = 100 MHz 300k 300k 350k Ohms
Carrier Lifetime(Min) τ IF = 10 mA 1.0 1.0 0.6 us
I-Region Width (Min) W - 150 150 40 um
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Microsemi
Page 3
Copyright 2005
Rev. 0, 2006-03-13
WWW.Microsemi .COM
UM6000 / UM6200/UM6600
POWER PIN DIODES
UM6000/UM6200/UM6600
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
FORWARD VOLTAGE
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
FORWARD CURRENT (A)
FORWARD VOLTAGE versus CURRENT
UM6000
UM6200
UM6600
UM6000/UM6600
0
10 1
10 2
10 3
10
Vr (Volts)
0
10
1
10
2
10
3
10
Rp (kOhms)
Rp versus Vr
f = 100 MHz
f = 500 MHz
f = 1 GHz
f = 3 GHz
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Microsemi
Page 4
Copyright 2005
Rev. 0, 2006-03-13
WWW.Microsemi .COM
UM6000 / UM6200/UM6600
POWER PIN DIODES
UM6200
0
10 1
10 2
10 3
10
Vr (Volts)
0
10
1
10
2
10
3
10
Rp (kOhms)
Rp versus Vr
f = 100 MHz
f = 500 MHz
f = 1 GHz
f = 3 GHz
UM6000
2501 10 100
Vr (Volts)
0.0
0.5
1.0
1.5
Ct (pF)
Ct versus Vr
f = 1 MHz
f = 5 MHz
f = 10 MHz
f => 100 MHz
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Microsemi
Page 5
Copyright 2005
Rev. 0, 2006-03-13
WWW.Microsemi .COM
UM6000 / UM6200/UM6600
POWER PIN DIODES
UM6200
1 10 100
Vr (Volts)
0.8
0.9
1.0
1.1
1.2
1.3
1.4
Ct (pF)
Ct versus Vr
f = 1 MHz
f = 10 MHz
f = 100 MHz
f = 500 MHz
UM6600
1 10 100
Vr (Volts)
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Ct (pF)
Ct versus Vr
f = 1 MHz
f = 5 MHz
f = 10 MHz
f = 100 MHz
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Page 6
Copyright 2005
Rev. 0, 2006-03-13
WWW.Microsemi .COM
UM6000 / UM6200/UM6600
POWER PIN DIODES
UM6000/UM6200
0 25 50 75 100 125 150 175
T LEAD TEMPERATURE ( C)
0.0
1.0
2.0
3.0
4.0
5.0
MAX POWER DISSIPATION (W)
MAX POWER DISSIPATION versus LEAD TEMPERATURE
L = 1/4"
L = 3/8"
L = 1/2"
L = 5/8"
L = 3/4"
Lo
UM6600
0 25 50 75 100 125 150 175
T LEAD TEMPERATURE ( C)
0.0
1.0
2.0
3.0
4.0
5.0
MAX POWER DISSIPATION (W)
MAX POWER DISSIPATION versus LEAD TEMPERATURE
L = 1/4"
L = 3/8"
L = 1/2"
L = 5/8"
L = 3/4"
Lo
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Microsemi
Page 7
Copyright 2005
Rev. 0, 2006-03-13
WWW.Microsemi .COM
UM6000 / UM6200/UM6600
POWER PIN DIODES
UM6000/UM6200/UM6600
-50 -25 0 25 50 75 100 125 150 175
TEMPERATURE ( C) (OFONE METAL PIN)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
AVERGE POWER DISSIPATION (W)
AVERGE POWER DISSIPATION versus TEMPERATURE
UM6000 AND
UM6200 SERIES
UM6600
o
UM6000/UM6200/UM6600
-6
10 -5
10 -4
10 -3
10 -2
10 -1
10 0
10
PULSE WIDTH (SEC)
-2
10
-1
10
0
10
1
10
2
10
PULSE THERMAL IMPEDANCE ( C/W)
PULSE THERMAL IMPEDANCE VS PULSE WIDTH
UM6200
UM6000
------UM6600
o
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Microsemi
Page 8
Copyright 2005
Rev. 0, 2006-03-13
WWW.Microsemi .COM
UM6000 / UM6200/UM6600
POWER PIN DIODES
STYLE “A” STYLE “B”
STYLE “C” STYLE “E”
STYLE “D”
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Microsemi
Page 9
Copyright 2005
Rev. 0, 2006-03-13
WWW.Microsemi .COM
UM6000 / UM6200/UM6600
POWER PIN DIODES
UM6000/UM6200/UM6600
UM6000/UM6200/UM6600 STYLE “SM” FOOTPRINT
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Microsemi
Page 10
Copyright 2005
Rev. 0, 2006-03-13
WWW.Microsemi .COM
UM6000 / UM6200/UM6600
POWER PIN DIODES
NOTES:
1. These dimensions will match the terminals and provide for additional solder fillets at the outboard ends at
least as wide as the terminals themselves, assuming accuracy of placement within 0.005”
2. If the mounting method chosen requires use of an adhesive separate from the solder compound, a round
(or square) spot of cement as shown should be centrally located.
NOTES:
N
NO
OT
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ES
S
