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5/4/00
IRF830AS/L
SMPS MOSFET
HEXFET® Power MOSFET
lSwitch Mode Power Supply (SMPS)
lUninterruptable Power Supply
lHigh Speed Power Switching
Benefits
Applications
lLow Gate Charge Qg Results in Simple
Drive Requirement
lImproved Gate, Avalanche and Dynamic
dv/dt Ruggedness
lFully Characterized Capacitance and
Avalanche Voltage and Current
lEffective Coss specified (See AN 1001)
VDSS RDS(on) max ID
500V 1.40Ω5.0A
Typical SMPS Topologies:
l Two Transistor Forward
l Half Bridge and Full Bridge
PD- 92006A
Notes through are on page 10
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V5.0
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V3.2 A
IDM Pulsed Drain Current 20
PD @TA = 25°C Power Dissipation 3.1 W
PD @TC = 25°C Power Dissipation 74
Linear Derating Factor 0.59 W/°C
VGS Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt 5.3 V/ns
TJOperating Junction and -55 to + 150
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C
Absolute Maximum Ratings
D2Pak TO-262
IRF830AS/L
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Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 2.8 ––– ––– S VDS = 50V, ID = 3.0A
QgTotal Gate Charge –– – –– – 2 4 ID = 5.0A
Qgs Gate-to-Source Charge ––– ––– 6.3 nC VDS = 400V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 11 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 10 ––– VDD = 250V
trRise Time ––– 21 ––– ID = 5.0A
td(off) Turn-Off Delay Time ––– 21 ––– RG = 14Ω
tfFall Time ––– 15 ––– RD = 49Ω,See Fig. 10
Ciss Input Capacitance ––– 620 ––– VGS = 0V
Coss Output Capacitance ––– 93 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 4.3 –– – pF ƒ = 1.0MHz, See Fig. 5
Coss Output Capacitance ––– 8 86 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 27 ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 39 ––– VGS = 0V, VDS = 0V to 400V
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy ––– 230 mJ
IAR Avalanche Current ––– 5.0 A
EAR Repetitive Avalanche Energy––– 7.4 mJ
Avalanche Characteristics
S
D
G
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode) ––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 5.0A, VGS = 0V
trr Reverse Recovery Time ––– 430 650 ns TJ = 25°C, IF = 5.0A
Qrr Reverse RecoveryCharge ––– 2 .0 3. 0 µC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Diode Characteristics
5.0
20 A
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 50 0 – –– – –– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.60 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 1.4 ΩVGS = 10V, ID = 3.0A
VGS(th) Gate Threshold Voltage 2.0 ––– 4 .5 V VDS = VGS, ID = 250µA
––– ––– 25 µA VDS = 500V, VGS = 0V
––– ––– 250 VDS = 400V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– – –– 100 VGS = 30V
Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -30V
IGSS
IDSS Drain-to-Source Leakage Current
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.7 °C/W
RθJA Junction-to-Ambient ( PCB Mounted, steady-state)* –– – 40
Thermal Resistance
IRF830AS/L
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Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.01
0.1
1
10
100
0.1 1 10 100
20
µ
s PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
0.1
1
10
100
1 10 100
20
µ
s PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Volta
g
e (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
0.1
1
10
100
4.0 5.0 6.0 7.0 8.0
V = 50V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
5.0A
IRF830AS/L
4www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
04812 16 20 24
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
5.0A
V = 100V
DS
V = 250V
DS
V = 400V
DS
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2
V ,Source-to-Drain Volta
g
e (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
0.1
1
10
100
10 100 1000 10000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Sin
g
le Pulse
T
T = 150 C
= 25 C
°°
J
C
V , Drain-to-Source Volta
g
e (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
1
10
100
1000
10000
1 10 100 1000
C, Ca pacitance (pF)
DS
V , Drain-to-Source Volta
g
e
(
V
)
A
V = 0V
,
f = 1MHz
C = C + C
,
C SHORTED
C = C
C = C + C
GS
iss
g
s
g
d d s
rss
g
d
os s ds
g
d
C
iss
C
oss
C
rss
IRF830AS/L
www.irf.com 5
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RGD.U.T.
10V
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150
0.0
1.0
2.0
3.0
4.0
5.0
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
IRF830AS/L
6www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
25 50 75 100 125 150
0
100
200
300
400
500
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
2.2A
3.2A
5.0A
Fig 12d. Typical Drain-to-Source Voltage
Vs. Avalanche Current
770
775
780
785
790
0.0 1.0 2.0 3.0 4.0 5.0
A
DSav
av
I , A valanc he Current (A)
V , Avalanche Voltage (V )
IRF830AS/L
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P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFET® Power MOSFET
* VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
IRF830AS/L
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D2Pak Package Outline
D2Pak
Part Marking Information
10.16 (.400)
REF.
6.47 (.255 )
6.18 (.243 )
2.61 (.1 03 )
2.32 (.0 91 )
8.89 (.350)
REF.
- B -
1.32 (.052)
1.22 (.048)
2.79 (.110)
2.29 (.090)
1.39 (.055)
1.14 (.045)
5.28 (.2 08 )
4.78 (.1 88 )
4.69 (.185)
4.20 (.165)
10.54 (.415)
10.29 (.405)
- A -
2
1 3 15.49 (.610)
14.73 (.580)
3X 0.93 (.037)
0.69 (.027)
5 .08 (.20 0)
3X 1.40 (.055)
1.14 (.045)
1.78 (.070)
1.27 (.050)
1.40 (.055)
MAX .
NOTES:
1 DIM ENSIONS A FTER SOLDER DIP.
2 DIM ENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
3 CONTROLLING DIM ENSION : INCH.
4 HEATSINK & LEAD DIM ENSIONS DO NOT INCLUDE BURRS .
0.55 (.022)
0.46 (.018)
0.2 5 ( .0 1 0) M B A M MINIMUM RECOMMENDED FOOTPRINT
11.43 (.450)
8 .89 (.35 0)
17 .78 (.70 0)
3.81 (.15 0)
2.08 (.082)
2X
LEAD AS SIGN MEN TS
1 - GATE
2 - DR AIN
3 - SOURCE
2.54 (.100)
2X
PAR T N UM BER
INTERNATIONAL
RE CTIFIER
L O G O DATE CODE
(YYW W )
YY = YEAR
WW = WEEK
A S SEMBLY
LOT COD E
F530S
9B 1M
9246
A
IRF830AS/L
www.irf.com 9
TO-262
Pa r t Marking Infor mation
Package Outline
TO-262 Outline
IRF830AS/L
10 www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ 5.0A, di/dt ≤ 370A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
Starting TJ = 25°C, L = 18mH
RG = 25Ω, IAS = 5.0A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Tape & Reel Information
D2Pak
3
4
4
TRR
FEED D IRE CTION
1 .85 (.0 73)
1 .65 (.0 65)
1 .60 (.0 63)
1 .50 (.0 59)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421) 16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532 )
12.80 (.504 )
330.00
(14.173)
MAX.
2 7.4 0 (1.079)
2 3.9 0 (.9 41)
60.00 (2.362)
MIN .
30.40 (1.197)
MA X .
26 .40 (1.03 9)
24 .40 (.9 61)
NO TES :
1. CO MFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ O UTER EDGE.
Uses IRF830A data and test conditions
* When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 5/00
