MCC132-14io1 Thyristor Module VRRM = 2x 1400 V I TAV = 130 A VT = 1.08 V Phase leg Part number MCC132-14io1 Backside: isolated 3 6 7 1 5 4 2 Features / Advantages: Applications: Package: Y4 Thyristor for line frequency Planar passivated chip Long-term stability Direct Copper Bonded Al2O3-ceramic Line rectifying 50/60 Hz Softstart AC motor control DC Motor control Power converter AC power control Lighting and temperature control Isolation Voltage: 3600 V~ Industry standard outline RoHS compliant Soldering pins for PCB mounting Base plate: DCB ceramic Reduced weight Advanced power cycling Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact the sales office, which is responsible for you. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. (c) 2016 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20160408b MCC132-14io1 Ratings Thyristor Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25C 1400 I R/D reverse current, drain current VT forward voltage drop min. typ. VR/D = 1400 V TVJ = 25C 200 A TVJ = 125C 10 mA I T = 150 A TVJ = 25C 1.14 V 1.36 V 1.08 V TVJ = 125 C I T = 150 A I T = 300 A I TAV average forward current TC = 85 C I T(RMS) RMS forward current 180 sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case for power loss calculation only RthCH thermal resistance case to heatsink total power dissipation I TSM max. forward surge current It value for fusing V VR/D = 1400 V I T = 300 A Ptot max. Unit 1500 V 1.36 V T VJ = 125 C 130 A 300 A TVJ = 125 C 0.80 V 1.5 m 0.23 K/W 0.10 K/W TC = 25C 435 W t = 10 ms; (50 Hz), sine TVJ = 45C 4.75 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 5.13 kA t = 10 ms; (50 Hz), sine TVJ = 125 C 4.04 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 4.36 kA t = 10 ms; (50 Hz), sine TVJ = 45C 112.8 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V 109.5 kAs t = 10 ms; (50 Hz), sine TVJ = 125 C t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25C PGM max. gate power dissipation t P = 30 s T C = 125 C 81.6 kAs 79.1 kAs 211 t P = 500 s pF 120 W 60 W 8 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 125 C; f = 50 Hz repetitive, IT = 500 A t P = 200 s; di G /dt = 0.5 A/s; (dv/dt)cr critical rate of rise of voltage V = VDRM VGT gate trigger voltage VD = 6 V TVJ = 25 C TVJ = -40 C 2.6 V I GT gate trigger current VD = 6 V TVJ = 25 C 150 mA TVJ = -40 C 200 mA VGD gate non-trigger voltage TVJ = 125C 0.2 V I GD gate non-trigger current 10 mA IL latching current TVJ = 25 C 300 mA IG = 0.5 A; V = VDRM 150 A/s non-repet., I T = 160 A 500 A/s 1000 V/s TVJ = 125C R GK = ; method 1 (linear voltage rise) VD = VDRM tp = 30 s IG = 0.5 A; di G /dt = 2.5 V 0.5 A/s IH holding current VD = 6 V R GK = TVJ = 25 C 200 mA t gd gate controlled delay time VD = 1/2 VDRM TVJ = 25 C 2 s tq turn-off time IG = 0.5 A; di G /dt = 0.5 A/s VR = 100 V; I T = 160 A; V = VDRM TVJ =100 C di/dt = 10 A/s dv/dt = IXYS reserves the right to change limits, conditions and dimensions. (c) 2016 IXYS all rights reserved 150 s 20 V/s t p = 200 s Data according to IEC 60747and per semiconductor unless otherwise specified 20160408b MCC132-14io1 Package Ratings Y4 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 300 Unit A -40 125 C -40 100 C 125 C 150 Weight MD mounting torque MT terminal torque d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL terminal to terminal 14.0 terminal to backside 16.0 t = 1 second isolation voltage t = 1 minute 50/60 Hz, RMS; IISOL 1 mA g 2.25 2.75 Nm 4.5 5.5 Nm 10.0 mm 16.0 mm 3600 V 3000 V Circuit Date Code + Prod. Index yywwAA Part Number Lot.No: xxxxxx Data Matrix: Typ (1-19), DC+Prod.Index (20-25), FKT# (26-31) leer (33), lfd.# (33-36) Ordering Standard Ordering Number MCC132-14io1 Equivalent Circuits for Simulation I V0 R0 Marking on Product MCC132-14io1 * on die level Delivery Mode Box Code No. 430560 T VJ = 125 C Thyristor V 0 max threshold voltage 0.8 V R0 max slope resistance * 0.8 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2016 IXYS all rights reserved Quantity 6 Data according to IEC 60747and per semiconductor unless otherwise specified 20160408b MCC132-14io1 Outlines Y4 M6 p a 2.8 / 0.8 Dim. MIN [mm] MIN [mm] MIN [inch] MIN [inch] a 30.0 30.6 1.181 1.205 b c f A h i 2 3 C k C l m A (3:1) c 64.0 65.0 2.520 2.559 d 6.5 7.0 0.256 0.275 e 4.9 5.1 0.193 0.201 f 28.6 29.2 1.126 1.150 g 7.3 7.7 0.287 0.303 h 93.5 94.5 3.681 3.720 i 79.5 80.5 3.130 3.169 j 4.8 5.2 0.189 0.205 k 33.4 34.0 1.315 1.339 B B-B (1:1) l 16.7 17.3 0.657 0.681 m 22.7 23.3 0.894 0.917 n 22.7 23.3 0.894 0.917 o 14.0 15.0 0.551 0.591 p 4 9 8 5 B n typ. 0.010 7 1 6 10 11 o q typ. 0.25 j typ. 10.5 typ. 0.413 q 22.8 23.3 0.898 0.917 r 1.8 2.4 0.071 0.041 C-C (1:1) r g b e DCB n 3 6 IXYS reserves the right to change limits, conditions and dimensions. (c) 2016 IXYS all rights reserved 7 1 5 d 4 2 Data according to IEC 60747and per semiconductor unless otherwise specified 20160408b MCC132-14io1 Thyristor 106 4000 320 DC 180 sin 120 60 30 280 3000 240 50 Hz 80% VRRM TVJ = 45C TVJ = 125C ITSM 2000 I2dt ITAVM 105 [A] 200 160 [A] TVJ = 45C [A2s] 120 TVJ = 125C 1000 80 40 104 0 0.001 0.01 0.1 1 0 1 10 0 75 100 125 150 Fig. 2 I t versus time (1-10 ms) Fig. 3 Max. forward current at case temperature 400 100 RthKA K/W 360 tp = 30 s tp = 500 s 0.3 0.4 0.5 0.6 0.8 1.0 1.4 1.8 320 280 Ptot 240 PGM = 120 W 60 W 10 P = 8 W GAV VG DC 180 sin 120 60 30 160 1 125C 120 [V] 80 40 0 0 50 100 150 200 250 0 25 50 ITAVM [A] 75 100 125 0.1 0.01 150 Ta [C] IGT (TVJ = -40C) IGT (TVJ = 0C) IGT (TVJ = 25C) 25C 200 [W] 50 TC [C] 2 Fig. 1 Surge overload current ITSM, IFSM: Crest value, t: duration 25 t [ms] t [s] IGD 0.1 1 10 IG [A] Fig. 4 Power dissipation vs. on-state current & ambient temperature (per thyristor or diode) Fig. 5 Gate trigger characteristics 100 1400 0.03 0.04 0.06 0.08 0.1 0.15 0.2 0.3 1200 Circuit B6 3xMCC132 or 1000 Ptot [W] TVJ = 25C RthKA K/W 3x MCD132 800 10 tgd [s] 600 limit 1 typ. 400 200 0 0 100 200 300 400 500 0 25 IdAVM [A] 50 75 100 125 T a [C] Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. (c) 2016 IXYS all rights reserved 150 0.1 0.01 0.1 1 10 IG [A] Fig. 7 Gate trigger delay time Data according to IEC 60747and per semiconductor unless otherwise specified 20160408b MCC132-14io1 Thyristor 1600 1200 Ptot RthKA K/W Circuit W3 3xMCC132 or 3xMCD132 0.03 0.04 0.06 0.08 0.1 0.15 0.2 0.3 800 [W] 400 0 0 100 200 300 400 0 25 50 IRMS [A] 75 100 125 150 Ta [C] Fig. 8 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature 0.4 RthJC for various conduction angles d: d RthJC [K/W] DC 0.230 180 0.244 120 0.255 60 0.283 30 0.321 0.3 ZthJC 0.2 30 60 120 180 DC [K/W] 0.1 0.0 10-3 10-2 10-1 100 101 Constants for ZthJC calculation: 102 i Rthi [K/W] 1 0.0095 2 0.0175 3 0.2030 ti [s] 0.001 0.065 0.400 t [s] Fig. 9 Transient thermal impedance junction to case (per thyristor/diode) 0.5 RthJK for various conduction angles d: d RthJK [K/W] DC 0.330 180 0.344 120 0.355 60 0.383 30 0.421 0.4 0.3 ZthJK 30 60 120 180 DC 0.2 [K/W] 0.1 0.0 10-3 10-2 10-1 100 101 Constants for ZthJK calculation: i Rthi [K/W] 1 0.0095 2 0.0175 3 0.2030 4 0.1000 102 ti [s] 0.001 0.065 0.400 1.290 103 t [s] Fig. 10 Transient thermal impedance junction to heatsink (per thyristor/diode) IXYS reserves the right to change limits, conditions and dimensions. (c) 2016 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20160408b