MCC132-14io1
Phase leg
Thyristor Module
3 1 2
6 57 4
Part number
MCC132-14io1
Backside: isolated
TAV
T
V V1.08
RRM
130
1400
=
V=V
I=A
2x
Features / Advantages: Applications: Package:
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Direct Copper Bonded Al2O3-ceramic
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
Y4
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
● Isolation Voltage: V~
3600
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact the sales office, which is responsible for you.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
Terms Conditions of usage:
IXYS reserves the right to change limits, conditions and dimensions. 20160408bData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
MCC132-14io1
V = V
kA²s
kA²s
kA²s
kA²s
Symbol
Definition
Ratings
typ.
max.
I
V
IA
V
T
1.14
R0.23 K/W
min.
130
VV
200T = 25°C
VJ
T = °C
VJ
mA10V = V
T = 25°C
VJ
I = A
T
V
T = °C
C
85
P
tot
435 WT = 25°C
C
150
1400
forward voltage drop
total power dissipation
Conditions
1.36
T = 25°C
VJ
125
V
T0
V0.80T = °C
VJ
125
r
T
1.5 mΩ
V1.08T = °C
VJ
I = A
T
V
150
1.36
I = A300
I = A300
threshold voltage
slope resistance for power loss calculation only
µA
125
VV1400T = 25°C
VJ
IA300
P
GM
Wt = 30 µs 120
max. gate power dissipation
P
T = °C
C
125
Wt = 60
P
P
GAV
W8
average gate power dissipation
C
J
211
junction capacitance
V = V400 T = 25°Cf = 1 MHz
RVJ
pF
I
TSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
125
I²t T = 45°C
value for fusing
T = °C125
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
thJC
thermal resistance junction to case
T = °C
VJ
125
4.75
5.13
81.6
79.1
kA
kA
kA
kA
4.04
4.36
112.8
109.5
1400
500 µs
RMS forward current
T(RMS)
TAV
180° sine
average forward current
(di/dt)
cr
A/µs
150repetitive, I =T
VJ
= 125 °C; f = 50 Hz
critical rate of rise of current
V
GT
gate trigger voltage
V = 6 V T = °C25
(dv/dt) T = 125°C
critical rate of rise of voltage
A/µs500
V/µs
t = µs;
I A; V = ⅔ V
R = ∞; method 1 (linear voltage rise)
VJ
DVJ
500 A
T
P
G
= 0.5
di /dt A/µs;
G
=0.5
DRM
cr
V = ⅔ V
DRM
GK
1000
2.5 V
T = °C-40
VJ
I
GT
gate trigger current
V = 6 V T = °C25
DVJ
150 mA
T = °C-40
VJ
2.6 V
200 mA
V
GD
gate non-trigger voltage
T = °C
VJ
0.2 V
I
GD
gate non-trigger current
10 mA
V = ⅔ V
D DRM
125
latching current
T = °C
VJ
300 mA
I
L
25t µs
p
= 30
I A;
G
= 0.5 di /dt A/µs
G
= 0.5
holding current
T = °C
VJ
200 mA
I
H
25V = 6 V
D
R = ∞
GK
gate controlled delay time
T = °C
VJ
2 µs
t
gd
25
I A;
G
= 0.5 di /dt A/µs
G
= 0.5
V = ½ V
D DRM
turn-off time
T = °C
VJ
150 µs
t
q
di/dt = A/µs10 dv/dt = V/µs20
V =
R
100 V; I A;
T
= 160 V = ⅔ V
DRM
tµs
p
= 200
non-repet., I = 160 A
T
100
R
thCH
0.10
thermal resistance case to heatsink
K/W
Thyristor
1500
RRM/DRM
RSM/DSM
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
R/D
reverse current, drain current
T
T
R/D
R/D
200
IXYS reserves the right to change limits, conditions and dimensions. 20160408bData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
MCC132-14io1
Ratings
Part Number
yywwAA
Date Code +
Prod. Index
Lot.No: xxxxxx
Data Matrix: Typ (1-19), DC+Prod.Index (20-25), FKT# (26-31)
leer (33), lfd.# (33-36)
Circuit
Package
T
op
°C
M
D
Nm2.75
mounting torque
2.25
T
VJ
°C125
virtual junction temperature
-40
Weight g150
Symbol
Definition
typ.
max.
min.
Conditions
operation temperature
M
T
Nm5.5
terminal torque
4.5
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
14.0 10.0
16.0 16.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current
300 A
per terminal
100-40
terminal to terminal
Y4
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
MCC132-14io1 430560Box 6MCC132-14io1Standard
3600
ISOL
T
stg
°C125
storage temperature
-40
3000
threshold voltage
V0.8
mΩ
V
0 max
R
0 max
slope resistance *
0.8
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Thyristor
125 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20160408bData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
MCC132-14io1
g
C-C (1:1)
e
n
d
r
j
B-B (1:1)
b
DCB
A (3:1)
c
a
M6
p
f
2.8
/
0.8
A
o
k
h
1 2 3
4
56
7
n m l
1
1
1
0
8
9
q
i
C C
B
B
Dim. MIN
[mm]
MIN
[mm]
MIN
[inch]
MIN
[inch]
a 30.0 30.6 1.181 1.205
b
c 64.0 65.0 2.520 2.559
d 6.5 7.0 0.256 0.275
e 4.9 5.1 0.193 0.201
f 28.6 29.2 1.126 1.150
g 7.3 7.7 0.287 0.303
h 93.5 94.5 3.681 3.720
i 79.5 80.5 3.130 3.169
j 4.8 5.2 0.189 0.205
k 33.4 34.0 1.315 1.339
l 16.7 17.3 0.657 0.681
m 22.7 23.3 0.894 0.917
n 22.7 23.3 0.894 0.917
o 14.0 15.0 0.551 0.591
p
q 22.8 23.3 0.898 0.917
r 1.8 2.4 0.071 0.041
typ. 0.25 typ. 0.010
typ. 10.5 typ. 0.413
3 1 2
6 57 4
Outlines Y4
IXYS reserves the right to change limits, conditions and dimensions. 20160408bData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
MCC132-14io1
0 25 50 75 100 125 150
T
a
[°C]
T
C
[°C]
t [ms]t [s]
0.001 0.01 0.1 1
0
1000
2000
3000
4
0
00
011
10
4
10
5
10
6
0 25 50 75 100 125 150
0
40
80
120
160
200
240
280
3
20
I
TSM
[A]
I
TAVM
[A]
0 50 100 150 200 250
0
40
80
120
160
200
240
280
320
360
400
P
tot
[W]
I
TAVM
[A]
0 25 50 75 100 125 1500 100 200 300 400 500
0
200
400
600
800
1000
1200
1400
I
2
dt
[A
2
s]
T
VJ
= 45°C
180° sin
120°
60°
30°
DC
T
VJ
= 125°C
50 Hz
80% V
RRM
T
VJ
= 45°C
T
VJ
= 125°C
R
thKA
K/W
0.3
0.4
0.5
0.6
0.8
1.0
1.4
1.8
P
tot
[W]
I
dAVM
[A] T
a
[°C]
B6
Circuit
3xMCC132 or
3x MCD132
Fig. 1 Surge overload current I
TSM
,
I
FSM
: Crest value, t: duration
Fig. 2 I
2
t versus time (1-10 ms) Fig. 3 Max. forward current
at case temperature
Fig. 4 Power dissipation vs. on-state current & ambient temperature
(per thyristor or diode)
Fig. 5 Gate trigger characteristics
Fig. 6 Three phase rectifier bridge: Power dissipation versus direct
output current and ambient temperature
Fig. 7 Gate trigger delay time
180° sin
120°
60°
30°
DC
R
thKA
K/W
0.2
0.08
0.1
0.15
0.04
0.06
0.03
0.3
0.01 0.1 1 10
0.1
1
10
100
0.01 0.1 1 10
0.1
1
10
100
I
G
[A]
V
G
[V]
I
G
[A]
T
VJ
= 25°C
t
gd
[μs]
I
GT
(T
VJ
= -40°C)
I
GT
(T
VJ
= 0°C)
I
GT
(T
VJ
= 25°C)
125°C
25°C
limit
typ.
t
p
= 30 µs
t
p
= 500 µs
P
GM
= 120 W
60 W
P
GAV
= 8 W
I
GD
Thyristor
IXYS reserves the right to change limits, conditions and dimensions. 20160408bData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
MCC132-14io1
0 100 200 300 400
0
400
800
1200
1600
t [s]
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
0.0
0.1
0.2
0.3
0.4
0.5
Z
thJC
[K/
W]
I
RMS
[A]
P
tot
[
W]
0 25 50 75 100 125 150
T
a
[°C]
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.0
0.1
0.2
0.3
0.4
Circuit
W3
3xMCC132 or
3xMCD132
Z
thJK
[K/W]
t [s]
DC
180°
120°
60°
30°
Fig. 8 Three phase AC-controller: Power dissipation versus
RMS output current and ambient temperature
Fig. 9 Transient thermal impedance junction to case (per thyristor/diode)
F
i
g.
10
Transie
n
t
therma
l
im
p
edance
j
un
c
ti
o
n
to
he
a
ts
i
n
k
(
p
e
r
thyristor/di
o
de
)
R
thJC
for various conduction angles d:
d R
thJC
[K/W]
DC 0.230
180° 0.244
120° 0.255
60° 0.283
30° 0.321
Constants for Z
thJC
calculation:
i R
thi
[K/W] t
i
[s]
1 0.0095 0.001
2 0.0175 0.065
3 0.2030 0.400
R
thJK
for various conduction angles d:
d R
thJK
[K/W]
DC 0.330
180° 0.344
120° 0.355
60° 0.383
30° 0.421
Constants for Z
thJK
calculation:
i R
thi
[K/W] t
i
[s]
1 0.0095 0.001
2 0.0175 0.065
3 0.2030 0.400
4 0.1000 1.290
0.15
0.1
0.08
R
thKA
K/W
0.2
0.03
0.04
0.06
0.3
DC
180°
120°
60°
30°
Thyristor
IXYS reserves the right to change limits, conditions and dimensions. 20160408bData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved