V
RRM
= 50 V - 600 V
I
F
= 12 A
Features
• High Surge Capability DO-4 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter Symbol
1N1199A(R) 1N1200A(R) 1N1204A(R) 1N1206A(R)
Unit
Repetitive peak reverse
• Types from 50 V to 600 V V
RRM
1N1199A thru 1N1206AR
1N1202A(R)
Maximum ratings, at T
j
= 25 °C, unless otherwise specified
Silicon Standard
Recover
Diode
2. Reverse polarity (R): Stud is anode.
Conditions
voltage
RRM
RMS reverse voltage V
RMS
35 70 280 420 V
DC blocking voltage V
DC
50 100 400 600 V
Continuous forward current I
F
12 12 12 12 A
Operating temperature T
j
-55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
Storage temperature T
stg
-55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
Parameter Symbol
1N1199A(R) 1N1200A(R) 1N1204A(R) 1N1206A(R)
Unit
Diode forward voltage 1.1 1.1 1.1 1.1
10 10 10 10 μA
15 15 15 15 mA
Thermal characteristics
Thermal resistance, junction -
case R
thJC
2.00 2.00 2.00 2.00 °C/W
200
A
Reverse current I
R
V
F
240 240 240
-55 to 150
T
C
= 25 °C, t
p
= 8.3 ms
Surge non-repetitive forward
current, Half Sine Wave I
F,SM
V
R
= 50 V, T
j
= 25 °C
I
F
= 12 A, T
j
= 25 °C
T
C
≤ 150 °C
Conditions
140
240 240
-55 to 150
12
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
10
1N1202A(R)
2.00
V
R
= 50 V, T
j
= 175 °C
1.1 V
15
Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
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