Features
Center amplifying gate
Hermetic metal case with ceramic insulator
(Also available with glass-metal seal up to 1200V)
International standard case TO-209AB (TO-93)
Compression Bonded Encapsulation for heavy duty
operations such as severe thermal cycling
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
IT(AV) 200 A
@ TC85 °C
IT(RMS) 314 A
ITSM @ 50Hz 5000 A
@ 60Hz 5230 A
I2t@
50Hz 125 KA2s
@ 60Hz 114 KA2s
VDRM/VRRM 400 to 2000 V
tqtypical 100 µ s
TJ- 40 to 125 °C
Parameters ST180S Units
Major Ratings and Characteristics
case style
TO-209AB (TO-93)
200A
PHASE CONTROL THYRISTORS Stud Version
ST180S SERIES
Bulletin I25165 rev. C 03/03
Document Number: 93720
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1
ST180S Series
Bulletin I25165 rev. C 03/03
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V DRM/VRRM, max. repetitive VRSM , maximum non- I DRM/IRRM max.
Type number Code peak and off-state voltage repetitive peak voltage @ TJ = TJ max
VVmA
04 400 500
08 800 900
12 1200 1300
16 1600 1700
20 2000 2100
ST180S 30
IT(AV) Max. average on-state current 200 A 180° conduction, half sine wave
@ Case temperature 85 °C
IT(RMS) Max. RMS on-state current 314 A DC @ 76°C case temperature
ITSM Max. peak, one-cycle 5000 t = 10ms No voltage
non-repetitive surge current 5230 t = 8.3ms reapplied
4200 t = 10ms 100% VRRM
4400 t = 8.3ms reapplied Sinusoidal half wave,
I2t Maximum I2t for fusing 125 t = 10ms No voltage Initial TJ = TJ max.
114 t = 8.3ms reapplied
88 t = 10ms 100% VRRM
81 t = 8.3ms reapplied
I2√t Maximum I2√t for fusing 1250 KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold
voltage
VT(TO)2High level value of threshold
voltage
rt1 Low level value of on-state
slope resistance
rt2 High level value of on-state
slope resistance
VTM Max. on-state voltage 1.75 V Ipk= 570A, TJ = 125°C, tp = 10ms sine pulse
IHMaximum holding current 600
ILMax. (typical) latching current 1000 (300)
1.08 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
1.18 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
1.14 (I > π x IT(AV)),TJ = TJ max.
Parameter ST180S Units Conditions
1.14 (I > π x IT(AV)),TJ = TJ max.
On-state Conduction
KA2s
V
mΩ
mA TJ = TJ max, anode supply 12V resistive load
A
di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω, tr ≤ 1µs
of turned-on current TJ = TJ max, anode voltage ≤ 80% VDRM
Gate current 1A, di g/dt = 1A/µs
Vd = 0.67% VDRM, TJ = 25°C
ITM = 300A, TJ = TJ max, di/dt = 20A/µs, V R = 50V
dv/dt = 20V/µ s, Gate 0V 100Ω, tp = 500µs
Parameter ST180S Units Conditions
tdTypical delay time 1.0
Switching
tqTypical turn-off time 100 µs
1000 A/µs
Document Number: 93720
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2
ST180S Series
Bulletin I25165 rev. C 03/03
dv/dt Maximum critical rate of rise of
off-state voltage
IDRM Max. peak reverse and off-state
IRRM leakage current
Blocking
500 V/µs TJ = TJ max linear to 80% rated VDRM
Parameter ST180S Units Conditions
30 mA TJ = TJ max, rated VDRM/VRRM applied
PGM Maximum peak gate power 10 TJ = TJ max, tp ≤ 5ms
PG(AV) Maximum average gate power 2.0 TJ = TJ max, f = 50Hz, d% = 50
IGM Max. peak positive gate current 3.0 A TJ = TJ max, tp ≤ 5ms
+VGM Maximum peak positive
gate voltage
-VGM Maximum peak negative
gate voltage
IGT DC gate current required TJ = - 40°C
to trigger mA T J = 25°C
TJ = 125°C
VGT DC gate voltage required TJ = - 40°C
to trigger V TJ = 25°C
TJ = 125°C
IGD DC gate current not to trigger 1 0 m A
Parameter ST180S Units Conditions
20
5.0
Triggering
VGD DC gate voltage not to trigger 0.25 V TJ = TJ max
TYP. MAX.
180 -
90 150
40 -
2.9 -
1.8 3.0
1.2 -
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
W
VT
J = TJ max, tp ≤ 5ms
TJMax. operating temperature range -40 to 125
Tstg Max. storage temperature range -40 to 150
RthJC Max. thermal resistance,
junction to case
RthCS Max. thermal resistance,
case to heatsink
T Mounting torque, ± 10% 31
(275)
24.5
(210)
wt Approximate weight 280 g
Case style TO - 209AB (TO-93) See Outline Table
Parameter ST180S Units Conditions
0.105 DC operation
0.04 Mounting surface, smooth, flat and greased
Thermal and Mechanical Specification
°C
K/W
Nm
(lbf-in) Lubricated threads
Non lubricated threads
Document Number: 93720
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3
ST180S Series
Bulletin I25165 rev. C 03/03
∆RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
180° 0.015 0.012 TJ = TJ max.
120° 0.019 0.020
90° 0.025 0.027 K/W
60° 0.036 0.037
30° 0.060 0.060
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
Ordering Information Table
1- Thyristor
2- Essential part number
3-0 = Converter grade
4-S = Compression bonding Stud
5- Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
6- P = Stud base 3/4"-16UNF2A threads
7- 0 = Eyelet terminals (Gate and Auxiliary Cathode Leads)
1 = Fast - on terminals (Gate and Auxiliary Cathode Leads)
8- V = Glass-metal seal (only up to 1200V)
None = Ceramic housing (over 1200V)
NOTE: For Metric device M16 x 1.5 Contact factory
Device Code
5
1234
ST 18 0 S 20 P 0
7
68
Document Number: 93720
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4
ST180S Series
Bulletin I25165 rev. C 03/03
Fast-on Terminals
Case Style TO-209AB (TO-93)
All dimensions in millimeters (inches)
Outline Table
2
WHITE SHRINK
RED SHRINK
RED CATHODE
RED SILICON RUBBER
+I
210 (8.26) 10 (0.39)
C.S. 0.4mm
(0.0006 s.i.)
MAX.
90 (3.54) M IN.
4.3 (0.17) DIA.
19 (0.75) MAX.
38.5 (1.52)
MAX.
16 (0. 63) MAX.
8.5 (0.33) DIA.
+
-
GLASS METAL SEAL
28.5 (1.12) MAX. DIA.
220 (8.66) 10 (0.39)
SW 32
C.S. 25mm2
(0.039 s.i.)
FLEXIBLE LEAD
4 (0.16) MAX.
22 (0.86) MIN.
35 (1.38) MAX.
3/4"-16UNF-2A *
27.5 (1.0 8)
9.5 (0.37) MIN.
WHITE GATE
2
WHITE SHRINK
RED SHRINK
RED CATHODE
RED SILICON RUBBER
+I
210 (8.26) 10 (0.39)
C.S. 0.4mm
(0.0006 s.i.)
38.5 (1.52)
MAX.
+
-
220 (8.66) 10 (0.39)
CERAMIC HOUSING
90 (3.54) MIN.
4.3 (0.17) DIA.
19 (0.75) MAX.
8.5 (0.33) DIA.
C.S. 25mm 2
(0.039 s.i.)
FLEXIBLE LEAD
4 (0.16) MAX.
22 (0.86) MIN.
MAX.
35 (1.38) MAX.
3/4"-16UNF-2A *
27.5 (1.08)
SW 32
27.5 (1.08) MAX. DIA.
WHITE GATE
9.5 (0.37) MIN.
16 (0.6 3) MAX.
AMP. 280000-1
REF-250
* FOR METRIC DEVICE: M16 X 1.5 - LENGHT 21 (0.83) MAX.
CONTACT FACTORY
* FOR METRIC DEVICE: M16 X 1.5 - LENGHT 21 (0.83) MAX.
CONTACT FACTORY
Document Number: 93720
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5
ST180S Series
Bulletin I25165 rev. C 03/03
Fig. 4 - On-state Power Loss Characteristics
Fig. 3 - On-state Power Loss Characteristics
80
90
100
110
120
130
0 40 80 120 160 200 240
Maximum A llo wable Case Tem p erature (° C )
30° 60° 90° 120° 180°
Average On-state Cu rr ent (A )
Conduction Angle
ST180S Series
R (DC) = 0.1 0 5 K/W
thJC
70
80
90
100
110
120
130
0 50 100 150 200 250 300 350
DC
30° 60°90°120° 180°
A v erage On-state Cu rrent (A )
Maximu m Allowable Case Te mperatu re (°C)
Conduction Period
ST180S Se rie s
R (DC) = 0.105 K/W
thJC
Fig. 2 - Current Ratings Characteristics
Fig. 1 - Current Ratings Characteristics
25 50 75 100 125
Maxi mum A ll owabl e A mbie nt Temperatu re (°C)
R = 0.08 K/W - Delta R
thSA
0.1 K/W
0.16 K/W
0.2 K/W
0.3 K/W
0.4 K/W
0.5 K/W
0.8 K/W
1.2 K/ W
0
50
100
150
200
250
300
350
0 40 80 120 160 200 240
180°
120°
90°
60°
30°
RMS Lim it
Conduction Angle
M aximu m A v erage On- state Power Loss (W)
Average On-state Cu rr e nt ( A )
ST180S Se rie s
T = 125°C
J
25 50 75 100 125
Maxi mum A ll owabl e A m bient Temperatu re (°C)
R = 0.08 K/W - Delta R
thS
A
0.1 K/W
0.16 K/W
0.2 K/W
0.3 K/W
0.4 K/W
0.5 K/W
0.8 K/W
1.2 K/W
0
50
100
150
200
250
300
350
400
450
500
0 40 80 120 160 200 240 280 320
DC
180°
120°
90°
60°
30°
RMS Lim it
Conducti on Per i od
Maxi m u m A v erage On -state Power Loss (W)
A v erage On-state Curr ent ( A)
ST180S Series
T = 125°C
J
Document Number: 93720
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6
ST180S Series
Bulletin I25165 rev. C 03/03
2000
2400
2800
3200
3600
4000
4400
4800
110100
Number O f Equ al A mplitu de Hal f Cy cl e Cu rren t Pulses (N)
Peak Half Sine W ave On-state Current (A)
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
ST180S Series
At Any Rated Load Condi tion And W i th
Rate d V A p plie d Follow in g Surge.
RRM
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
2000
2500
3000
3500
4000
4500
5000
5500
0.01 0.1 1
Pulse T rain Durat ion (s)
V er sus Pulse Trai n Dur ation. Control
Peak Ha lf Sine Wav e On -state Curr ent (A)
Initial T = 125°C
No Voltage Re ap plied
Rated V Reappli ed
RRM
J
ST180S Series
Maxi mum Non Repeti tive Surge Cu rren t
Of Conduction May N ot Be Maintai ned.
100
1000
10000
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
T = 25°C
J
Instant aneous On-st ate C urren t (A)
Instantaneou s On-state V oltage (V)
T = 125°C
J
ST180S Series
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10
Squ are Wave Pu lse D u ration ( s)
thJC
Transient Thermal Impe dance Z (K/W)
ST180S Series
St e a d y St a t e V a lue
R = 0 .1 05 K/W
(D C Operati on)
thJC
Fig. 8 - Thermal Impedance ZthJC Characteristic
Fig. 7 - On-state Voltage Drop Characteristics
Document Number: 93720
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7
ST180S Series
Bulletin I25165 rev. C 03/03
Fig. 9 - Gate Characteristics
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD IGD
(b)
(a)
Tj=25 °C
Tj=125 °C
Tj=-40 °C
(1) (2) (3)
Instantane ous Gate Current ( A)
Insta nt aneous Ga t e Volt a ge (V)
Rectan gular gate pulse
a) Recommended load lin e fo r
b) Recommended l oad lin e for
<= 3 0 % rated di/dt : 1 0V, 1 0 ohms
Frequency Limi ted by PG(AV)
r ated di/dt : 20V, 10 ohms; tr<= 1 µs
tr< =1 µs
(1 ) PGM = 10 W, tp = 4ms
(2 ) PGM = 20 W, tp = 2ms
(3 ) PGM = 40 W, tp = 1ms
(4) P GM = 60W, tp = 0.66ms
Device: ST180S Series
(4)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
03/03
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
Document Number: 93720
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8
Legal Disclaimer Notice
Vishay
Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier®, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN®
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.
