High Voltage IGBT IXGN100N170 VCES = 1700V = 95A IC90 VCE(sat) 3.0V E Symbol Test Conditions VCES VCGR TJ = 25C to 150C TJ = 25C to 150C, RGE = 1M VGES VGEM SOT-227B, miniBLOC E153432 Maximum Ratings 1700 1700 V V Continuous Transient 20 30 V V IC25 IC90 ICM TC = 25C TC = 90C TC = 25C, 1ms 160 95 600 A A A SSOA (RBSOA) VGE = 15V, TVJ = 125C, RG = 1 Clamped Inductive Load ICM = 200 @0.8 * VCES A tsc (SCSOA) VGE = 15V, VCE = 1250V, TJ = 125C RG = 10, Non Repetitive 10 s PC TC = 25C 735 W -55 ... +150 150 -55 ... +150 C C C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g TJ TJM Tstg VISOL 50/60Hz IISOL 1mA Md Mounting Torque Terminal Connection Torque t = 1min t = 1s Weight Ec G Ec C G = Gate, C = Collector, E = Emitter c either emitter terminal can be used as Main or Kelvin Emitter Features z z z z z Advantages z z Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 3mA, VGE = 0V VGE(th) IC = 8mA, VCE = VGE ICES VCE = VCES, VGE = 0V 5.0 VCE = 0V, VGE = 20V VCE(sat) IC = 100A, VGE = 15V, Note 1 (c) 2012 IXYS CORPORATION, All Rights Reserved V 50 A 3 mA TJ = 125C IGES z V 3.0 2.5 High Power Density Low Gate Drive Requirement Applications Characteristic Values Min. Typ. Max. 1700 Optimized for Low Conduction and Switching Losses Isolation Voltage 2500V~ Short Circuit Capability International Standard Package High Current Handling Capability 200 nA 3.0 V z z z z z Power Inverters UPS Motor Drives SMPS PFC Circuits Welding Machines DS100091A(01/12) IXGN100N170 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 36 IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg Qge Qgc IC = 100A, VGE = 15V, VCE = 0.5 * VCES td(on) tr td(off) tf td(on) tr td(off) tf Resistive load, TJ = 25C IC = 100A, VGE = 15V VCE = 0.5 * VCES, RG = 1 Resistive load, TJ = 125C IC = 100A, VGE = 15V VCE = 0.5 * VCES, RG = 1 RthJC RthCS Note: SOT-227B miniBLOC (IXGN) 64 S 9200 455 150 pF pF pF 425 65 186 nC nC nC 35 192 285 395 ns ns ns ns 35 250 ns ns 285 435 ns ns 0.05 0.17 C/W C/W 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGN100N170 Fig. 1. Output Characteristics @ T J = 25C Fig. 2. Extended Output Characteristics @ T J = 25C 350 200 VGE = 15V 13V 11V 150 250 IC - Amperes 9V IC - Amperes VGE = 15V 13V 11V 300 100 7V 9V 200 150 100 50 7V 50 5V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 2 3 5 6 7 8 Fig. 3. Output Characteristics @ T J = 125C Fig. 4. Dependence of VCE(sat) on Junction Temperature 9 10 2.0 VGE = 15V 13V 11V VGE = 15V 1.8 I VCE(sat) - Normalized 150 9V 100 7V 50 1.6 C =200A 1.4 I 1.2 C = 100A 1.0 0.8 5V I 0 C = 50A 0.6 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -50 5 -25 0 VCE - Volts 25 50 75 100 125 150 7.0 7.5 8.0 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 180 6.5 160 TJ = 25C 5.5 140 4.5 I 3.5 C IC - Amperes VCE - Volts 4 VCE - Volts 200 IC - Amperes 1 VCE - Volts = 200A 100A 120 100 80 TJ = - 40C 25C 125C 60 40 2.5 50A 20 1.5 0 5 6 7 8 9 10 11 12 VGE - Volts (c) 2012 IXYS CORPORATION, All Rights Reserved 13 14 15 4.0 4.5 5.0 5.5 6.0 VGE - Volts 6.5 IXGN100N170 Fig. 8. Gate Charge Fig. 7. Transconductance 110 16 100 TJ = - 40C VCE = 850V 14 I C = 100A 90 70 125C 60 I G = 10mA 12 25C VGE - Volts g f s - Siemens 80 50 40 30 10 8 6 4 20 2 10 0 0 0 20 40 60 80 100 120 140 160 180 200 0 50 100 150 IC - Amperes 200 250 300 350 400 450 QG - NanoCoulombs Fig. 9. Reverse-Bias Safe Operating Area Fig. 10. Capacitance 100,000 f = 1 MHz Capacitance - PicoFarads 200 IC - Amperes 160 120 80 TJ = 125C 40 Cies 10,000 1,000 Coes RG = 1 dv / dt < 10V / ns Cres 0 200 100 400 600 800 1000 1200 1400 1600 1800 0 5 10 15 20 25 30 35 40 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - C / W 1 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 IXGN100N170 Fig. 13. Resistive Turn-on Rise Time vs. Collector Current Fig. 12. Resistive Turn-on Rise Time vs. Junction Temperature 320 320 RG = 1, VGE = 15V RG = 1, VGE = 15V 280 VCE = 850V VCE = 850V 240 I C t r - Nanoseconds t r - Nanoseconds 280 = 100A 200 160 240 TJ = 125C 200 160 TJ = 25C 120 120 I 80 C = 50A 80 40 40 25 35 45 55 65 75 85 95 105 115 50 125 55 60 65 70 450 tr td(on) - - - - 1000 60 900 55 800 50 45 I C = 100A 200 40 I C = 50A 150 35 t f - Nanoseconds t r - Nanoseconds 300 t d(on) - Nanoseconds VCE = 850V 250 85 90 95 100 400 tf td(off) - - - - 380 RG = 1, VGE = 15V VCE = 850V 360 700 340 I C = 50A 600 320 500 300 400 280 t d(off) - Nanoseconds 65 TJ = 125C, VGE = 15V 350 80 Fig. 15. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 14. Resistive Turn-on Switching Times vs. Gate Resistance 400 75 IC - Amperes TJ - Degrees Centigrade I C = 100A 100 50 1 2 3 4 5 6 7 8 9 30 300 25 200 260 25 10 35 45 55 65 RG - Ohms 1000 420 1100 400 1000 700 360 600 340 TJ = 125C 500 320 TJ = 25C 300 300 200 55 60 65 70 75 115 240 125 80 85 IC - Amperes (c) 2012 IXYS CORPORATION, All Rights Reserved 90 900 tf td(off) - - - - 800 95 VCE = 850V 900 700 800 600 700 500 I C = 50A 600 400 I 500 280 400 260 100 300 C = 100A 300 t d(off) - Nanoseconds 380 VCE = 850V 50 105 TJ = 125C, VGE = 15V t d(off) - Nanoseconds t f - Nanoseconds td(off) - - - - RG = 1, VGE = 15V 400 95 Fig. 17. Resistive Turn-off Switching Times vs. Gate Resistance t f - Nanoseconds tf 800 85 TJ - Degrees Centigrade Fig. 16. Resistive Turn-off Switching Times vs. Collector Current 900 75 200 100 1 2 3 4 5 6 7 8 9 10 RG - Ohms IXYS REF: IXG_100N170(9P)01-26-12-A