IXGN100N160A - IXYS - Datasheet.Directory

IXGN100N170

DS100091A(01/12)

SOT-227B, miniBLOC

G = Gate, C = Collector, E = Emitter

c either emitter terminal can be used as

Main or Kelvin Emitter

G

E c

C

E153432

E

High Voltage

IGBT

VCES = 1700V

IC90 = 95A

VCE(sat) ≤ ≤

≤ ≤

≤

3.0V

Symbol Test Conditions Maximum Ratings

VCES TJ= 25°C to 150°C 1700 V

VCGR TJ= 25°C to 150°C, RGE = 1MΩ 1700 V

VGES Continuous ±20 V

VGEM Transient ±30 V

IC25 TC = 25°C 160 A

IC90 TC= 90°C 95 A

ICM TC= 25°C, 1ms 600 A

SSOA VGE = 15V, TVJ = 125°C, RG = 1Ω ICM = 200 A

(RBSOA) Clamped Inductive Load @0.8 • VCES

tsc VGE = 15V, VCE = 1250V, TJ = 125°C 10 μs

(SCSOA) RG = 10Ω, Non Repetitive

PCTC= 25°C 735 W

TJ-55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

VISOL 50/60Hz t = 1min 2500 V~

IISOL ≤ 1mA t = 1s 3000 V~

MdMounting Torque 1.5/13 Nm/lb.in.

Terminal Connection Torque 1.3/11.5 Nm/lb.in.

Weight 30 g

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

BVCES IC = 3mA, VGE = 0V 1700 V

VGE(th) IC= 8mA, VCE = VGE 3.0 5.0 V

ICES VCE = VCES, VGE = 0V 50 μA

TJ = 125°C 3 mA

IGES VCE = 0V, VGE = ±20V ±200 nA

VCE(sat) IC= 100A, VGE = 15V, Note 1 2.5 3.0 V

Features

zOptimized for Low Conduction and

Switching Losses

zIsolation Voltage 2500V~

zShort Circuit Capability

zInternational Standard Package

zHigh Current Handling Capability

Advantages

zHigh Power Density

zLow Gate Drive Requirement

Applications

zPower Inverters

zUPS

zMotor Drives

zSMPS

zPFC Circuits

zWelding Machines

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXGN100N170

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

SOT-227B miniBLOC (IXGN)

Symbol Test Conditions Characteristic Values

(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.

gfs IC = 60A, VCE = 10V, Note 1 36 64 S

Cies 9200 pF

Coes VCE = 25V, VGE = 0V, f = 1MHz 455 pF

Cres 150 pF

Qg 425 nC

Qge IC = 100A, VGE = 15V, VCE = 0.5 • VCES 65 nC

Qgc 186 nC

td(on) 35 ns

tr 192 ns

td(off) 285 ns

tf 395 ns

td(on) 35 ns

tr 250 ns

td(off) 285 ns

tf 435 ns

RthJC 0.17 °C/W

RthCS 0.05 °C/W

Resistive load, TJ = 25°C

IC = 100A, VGE = 15V

VCE = 0.5 • VCES, RG = 1Ω

Resistive load, TJ = 125°C

IC = 100A, VGE = 15V

VCE = 0.5 • VCES, RG = 1Ω

Note: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

IXGN100N170

Fi g . 1. Ou tp u t C h ar acter i sti cs @ T

J

= 25ºC

0

50

100

150

200

0 0.5 1 1.5 2 2.5 3 3.5 4

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

11V

7V

5V

9V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

50

100

150

200

250

300

350

012345678910

V

CE

- Volts

I

C

-

Amperes

V

GE

= 15V

13V

11V

7V

5V

9V

Fi g . 3. Ou tp u t C h ar acter i sti cs @ T

J

= 125ºC

0

50

100

150

200

00.511.522.533.544.55

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

11V

7V

5V

9V

Fig. 4. Dependence of V

CE(sat)

on

Junction T emperature

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 50A

I

C

=200A

I

C

= 100A

Fi g . 5. C o l l ecto r -to -Emi tter Vo l tag e

vs. Gate-to -Emi tter Vo l tag e

1.5

2.5

3.5

4.5

5.5

6.5

5 6 7 8 9 10 11 12 13 14 15

V

GE

- Volts

V

CE

- Volts

I

C

= 200A

T

J

= 25ºC

100A

50A

Fig. 6. Input Adm ittance

0

20

40

60

80

100

120

140

160

180

4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0

V

GE

- Volts

I

C

-

Amperes

T

J

= - 40ºC

25ºC

125ºC

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXGN100N170

Fi g. 7. Transc o n d u c tan ce

0

10

20

30

40

50

60

70

80

90

100

110

0 20 40 60 80 100 120 140 160 180 200

I

C

- Amperes

g

f s

-

Siemens

T

J

= - 40ºC

125ºC

25ºC

Fig. 8. Gate Charge

0

2

4

6

8

10

12

14

16

0 50 100 150 200 250 300 350 400 450

Q

G

- NanoCoulombs

V

GE

- Volts

V

CE

= 850V

I

C

= 100A

I

G

= 10mA

Fi g. 9. Rever se-Bi as Safe Operati n g Area

0

40

80

120

160

200

200 400 600 800 1000 1200 1400 1600 1800

V

CE

- Volts

I

C

- Amperes

T

J

= 125ºC

R

G

= 1Ω

dv / dt < 10V / ns

Fig. 10. Capacitance

100

1,000

10,000

100,000

0 5 10 15 20 25 30 35 40

V

CE

- Volts

Capacitance - PicoFarads

f

= 1 MHz

Cies

Coes

Cres

Fi g . 11. Maximu m Tran sien t Thermal I mp edan ce

0.001

0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- ºC / W

IXGN100N170

Fi g . 13. R esi sti ve Tur n -o n R i se Time

vs. Co llec to r C ur ren t

40

80

120

160

200

240

280

320

50 55 60 65 70 75 80 85 90 95 100

I

C

- Amperes

t

r

- Nanoseconds

R

G

= 1Ω, V

GE

= 15V

V

CE

= 850V

T

J

= 125ºC

T

J

= 25ºC

Fi g . 14. R esisti ve Tur n -o n Swi tch i n g Times

vs. Gate R esistan ce

50

100

150

200

250

300

350

400

450

12345678910

R

G

- Ohms

t

r

- Nanoseconds

25

30

35

40

45

50

55

60

65

t

d

(

on

)

- Nanoseconds

t

r

t

d(on

)

- - - -

T

J

= 125ºC, V

GE

= 15V

V

CE

= 850V

I

C

= 100A

I

C

= 50A

Fi g . 15. R esi sti ve Tur n -o ff Swi tc hi n g Times

vs. Junction T emperature

200

300

400

500

600

700

800

900

1000

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

f

- Nanoseconds

240

260

280

300

320

340

360

380

400

t

d

(

off

)

- Nanoseconds

t

f

t

d(off)

- - - -

R

G

= 1Ω, V

GE

= 15V

V

CE

= 850V

I

C

= 100A

I

C

= 50A

Fi g . 16. R esistive Tur n-o ff Switch i ng Ti mes

vs. Collector Current

200

300

400

500

600

700

800

900

1000

50 55 60 65 70 75 80 85 90 95 100

I

C

- Amperes

t

f

- Nanoseconds

260

280

300

320

340

360

380

400

420

t

d

(

off

)

- Nanoseconds

t

f

t

d(off

)

- - - -

R

G

= 1Ω, V

GE

= 15V

V

CE

= 850V

T

J

= 125ºC

T

J

= 25ºC

Fig . 12. R es i stive Turn -on Ri se Ti me

vs. Junction T emperature

40

80

120

160

200

240

280

320

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

r

- Nanoseconds

R

G

= 1Ω, V

GE

= 15V

V

CE

= 850V

I

C

= 100A

I

C

= 50A

Fi g . 17. R esisti ve Tur n-o ff Switch i ng Times

vs. Gate Resi st an ce

300

400

500

600

700

800

900

1000

1100

12345678910

R

G

- Ohms

t

f

- Nanoseconds

100

200

300

400

500

600

700

800

900

t

d

(

off

)

- Nanoseconds

t

f

t

d(off

)

- - - -

T

J

= 125ºC, V

GE

= 15V

V

CE

= 850V

I

C

= 50A

I

C

= 100A

IXYS REF: IXG_100N170(9P)01-26-12-A