Datasheet
RL78/G12
RENESAS MCU
True Low Power Platform (as low as 63 μA/MHz), 1.8V to 5.5V operation,
2 to 16 Kbyte Flash, 31 DMIPS at 24MHz, for General Purpose Applications
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 1 of 106
R01DS0193EJ0220
Rev.2.20
Oct 31, 2018
1. OUTLINE
1.1 Features
Ultra-low power consumption technology
V
DD = single power supply voltage of 1.8 to 5.5 V which
can operate at a low voltage
HALT mode
STOP mode
SNOOZE mode
RL78 CPU core
CISC architecture with 3-stage pipeline
Minimum instruction execution time: Can be changed
from high speed (0.04167 s: @ 24 MHz operation with
high-speed on-chip oscillator) to ultra-low speed (1 s:
@ 1 MHz operation)
Address space: 1 MB
General-purpose registers: (8-bit register x 8) x 4 banks
On-chip RAM: 256 B to 2 KB
Code flash memory
Code flash memory: 2 to 16 KB
Block size: 1 KB
Prohibition of block erase and rewriting (security
function)
On-chip debug function
Self-programming (with flash shield window function)
Data flash memory Note
Data flash memory: 2 KB
Back ground operation (BGO): Instructions are
executed from the program memory while rewriting the
data flash memory.
Number of rewrites: 1,000,000 times (TYP.)
Voltage of rewrites: VDD = 1.8 to 5.5 V
High-speed on-chip oscillator
Select from 24 MHz, 16 MHz, 12 MHz, 8 MHz, 6 MHz,
4 MHz, 3 MHz, 2 MHz, and 1 MHz
High accuracy: +/- 1.0 % (VDD = 1.8 to 5.5 V, TA = -20
to +85 °C)
Operating ambient temperature
T
A = -40 to +85 °C (A: Consumer applications, D:
Industrial applications)
T
A = -40 to +105 °C (G: Industrial applications) Note
Power management and reset function
On-chip power-on-reset (POR) circuit
On-chip voltage detector (LVD) (Select interrupt and
reset from 12 levels)
DMA (Direct Memory Access) controller Note
2 channels
Number of clocks during transfer between 8/16-bit SFR
and internal RAM: 2 clocks
Multiplier and divider/multiply-accumulator
16 bits x 16 bits = 32 bits (Unsigned or signed)
32 bits x 32 bits = 32 bits (Unsigned)
16 bits x 16 bits + 32 bits = 32 bits (Unsigned or
signed)
Serial interface
CSI : 1 to 3 channels
UART : 1 to 3 channels
Simplified I2C communication : 0 to 3 channels
I
2C communication : 1 channel
Timer
16-bit timer : 4 to 8 channels
12-bit interval timer : 1 channel
Watchdog timer : 1 channel (operable with the
dedicated low-speed on-chip
oscillator)
A/D converter
8/10-bit resolution A/D converter (VDD = 1.8 to 5.5 V)
8 to 11 channels, internal reference voltage (1.45 V),
and temperature sensor Note
I/O port
I/O port: 18 to 26
(N-ch open drain I/O [withstand voltage of 6 V]: 2,
N-ch open drain I/O [VDD withstand voltage]: 4 to 9)
Can be set to N-ch open drain, TTL input buffer, and
on-chip pull-up resistor
Different potential interface: Can connect to a 1.8/2.5/3
V device
On-chip key interrupt function
On-chip clock output/buzzer output controller
Others
On-chip BCD (binary-coded decimal) correction circuit
Note Can be selected only in HS (high-speed main)
mode.
Remark The functions mounted depend on the product.
See 1.7 Outline of Functions.
RL78/G12 1. OUTLINE
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 2 of 106
Օ ROM, RAM capacities
Code flash Data flash RAM 20 pins 24 pins 30 pins
16 KB 2 KB 2 KB R5F102AA
R5F103AA
2 KB 1.5 KB R5F1026A Note 1 R5F1027A Note 1
R5F1036A Note 1 R5F1037A Note 1
12 KB 2KB 1 KB R5F10269 Note 1 R5F10279 Note 1 R5F102A9
R5F10369 Note 1 R5F10379 Note 1 R5F103A9
8 KB 2 KB 768 B R5F10268 Note 1 R5F10278 Note 1 R5F102A8
R5F10368 Note 1 R5F10378 Note 1 R5F103A8
4 KB 2KB 512 B R5F10267 R5F10277 R5F102A7
R5F10367 R5F10377 R5F103A7
2 KB 2 KB 256 B R5F10266 Note 2
R5F10366 Note 2
Notes 1. This is 640 bytes when the self-programming function or data flash function is used. (For details, see
CHAPTER 3 CPU ARCHITECTURE in the RL78/G12 User’s Manual.)
2. The self-programming function cannot be used for R5F10266 and R5F10366.
Caution When the flash memory is rewritten via a user program, the code flash area and RAM area are used
because each library is used. When using the library, refer to RL78 Family Flash Self Programming
Library Type01 User's Manual and RL78 Family Data Flash Library Type04 User's Manual.
RL78/G12 1. OUTLINE
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 3 of 106
1.2 List of Part Numbers
Figure 1-1. Part Number, Memory Size, and Package of RL78/G12
Part No. R 5 F 1 0 2 A A A x x x S P #V0
Package type:
ROM number (Omitted with blank products)
ROM capacity:
RL78/G12 group
Renesas MCU
Renesas semiconductor product
SP : LSSOP, 0.65 mm pitch
NA : HWQFN, 0.50 mm pitch
#U5
#V0, #V5
#W5
#X0, #X5
6 : 2 KB
7 : 4 KB
8 : 8 KB
9 : 12 KB
A : 16 KB
Pin count:
6: 20-pin
7: 24-pin
A : 30-pin
Classification:
A : Consumer applications, TA = -40°C to +85°C
D : Industrial applications, TA = -40°C to +85°C
G : Industrial applications, TA = -40°C to +105°C
Memory type:
F : Flash memory
Packaging specifications:
102Note 1
103Notes 1, 2
: Tray (HWQFN)
: Tray (LSSOP30), Tube (LSSOP20)
: Embossed Tape (HWQFN)
: Embossed Tape (LSSOP30, LSSOP20)
Notes 1. For details about the differences between the R5F102 products and the R5F103 products of RL78/G12,
see 1.1 Differences between the R5F102 Products and the R5F103 Products.
2. Products only for “A: Consumer applications (TA = -40 to +85°C)” and “D: Industrial applications (TA = -40 to
+85°C)”
RL78/G12 1. OUTLINE
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 4 of 106
Table 1-1. List of Ordering Part Numbers
Pin
count
Package Data flash Fields of
Application
Note
Part Number
20
pins
20-pin plastic
LSSOP
(4.4 × 6.5 mm,
0.65 mm pitch)
Mounted A R5F1026AASP#V5, R5F10269ASP#V5, R5F10268ASP#V5, R5F10267ASP#V5,
R5F10266ASP#V5
R5F1026AASP#X5, R5F10269ASP#X5, R5F10268ASP#X5, R5F10267ASP#X5,
R5F10266ASP#X5
D R5F1026ADSP#V5, R5F10269DSP#V5, R5F10268DSP#V5, R5F10267DSP#V5,
R5F10266DSP#V5
R5F1026ADSP#X5, R5F10269DSP#X5, R5F10268DSP#X5, R5F10267DSP#X5,
R5F10266DSP#X5
G R5F1026AGSP#V5, R5F10269GSP#V5, R5F10268GSP#V5, R5F10267GSP#V5,
R5F10266GSP#V5
R5F1026AGSP#X5, R5F10269GSP#X5, R5F10268GSP#X5, R5F10267GSP#X5,
R5F10266GSP#X5
Not mounted A R5F1036AASP#V5, R5F10369ASP#V5, R5F10368ASP#V5, R5F10367ASP#V5,
R5F10366ASP#V5
R5F1036AASP#X5, R5F10369ASP#X5, R5F10368ASP#X5, R5F10367ASP#X5,
R5F10366ASP#X5
D R5F1036ADSP#V5, R5F10369DSP#V5, R5F10368DSP#V5, R5F10367DSP#V5,
R5F10366DSP#V5
R5F1036ADSP#X5, R5F10369DSP#X5, R5F10368DSP#X5, R5F10367DSP#X5,
R5F10366DSP#X5
24
pins
24-pin plastic
HWQFN
(4 × 4 mm, 0.5
mm pitch)
Mounted A R5F1027AANA#U5, R5F10279ANA#U5, R5F10278ANA#U5, R5F10277ANA#U5
R5F1027AANA#W5, R5F10279ANA#W5, R5F10278ANA#W5,
R5F10277ANA#W5
D R5F1027ADNA#U5, R5F10279DNA#U5, R5F10278DNA#U5, R5F10277DNA#U5
R5F1027ADNA#W5, R5F10279DNA#W5, R5F10278DNA#W5,
R5F10277DNA#W5
G R5F1027AGNA#U5, R5F10279GNA#U5, R5F10278GNA#U5,
R5F10277GNA#U5
R5F1027AGNA#W5, R5F10279GNA#W5, R5F10278GNA#W5,
R5F10277GNA#W5
Not mounted A R5F1037AANA#U5, R5F10379ANA#U5, R5F10378ANA#U5,
R5F10377ANA#U5, R5F1037AANA#W5, R5F10379ANA#W5,
R5F10378ANA#W5, R5F10377ANA#W5
D R5F1037ADNA#U5, R5F10379DNA#U5, R5F10378DNA#U5,
R5F10377DNA#U5, R5F1037ADNA#W5, R5F10379DNA#W5,
R5F10378DNA#W5, R5F10377DNA#W5
30
pins
30-pin plastic
LSSOP
(7.62 mm
(300), 0.65 mm
pitch )
Mounted A R5F102AAASP#V0, R5F102A9ASP#V0, R5F102A8ASP#V0, R5F102A7ASP#V0
R5F102AAASP#X0, R5F102A9ASP#X0, R5F102A8ASP#X0, R5F102A7ASP#X0
D R5F102AADSP#V0, R5F102A9DSP#V0, R5F102A8DSP#V0, R5F102A7DSP#V0
R5F102AADSP#X0, R5F102A9DSP#X0, R5F102A8DSP#X0, R5F102A7DSP#X0
G R5F102AAGSP#V0, R5F102A9GSP#V0, R5F102A8GSP#V0,
R5F102A7GSP#V0
R5F102AAGSP#X0, R5F102A9GSP#X0, R5F102A8GSP#X0,
R5F102A7GSP#X0
Not mounted A R5F103AAASP#V0, R5F103A9ASP#V0, R5F103A8ASP#V0, R5F103A7ASP#V0
R5F103AAASP#X0, R5F103A9ASP#X0, R5F103A8ASP#X0, R5F103A7ASP#X0
D R5F103AADSP#V0, R5F103A9DSP#V0, R5F103A8DSP#V0, R5F103A7DSP#V0
R5F103AADSP#X0, R5F103A9DSP#X0, R5F103A8DSP#X0, R5F103A7DSP#X0
Note For fields of application, see Figure 1-1 Part Number, Memory Size, and Package of RL78/G12.
Caution The ordering part numbers represent the numbers at the time of publication. For the latest ordering
part numbers, refer to the target product page of the Renesas Electronics website.
<R>
RL78/G12 1. OUTLINE
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 5 of 106
1.3 Differences between the R5F102 Products and the R5F103 Products
The following are differences between the R5F102 products and the R5F103 products.
Օ Whether the data flash memory is mounted or not
Օ High-speed on-chip oscillator oscillation frequency accuracy
Օ Number of channels in serial interface
Օ Whether the DMA function is mounted or not
Օ Whether a part of the safety functions are mounted or not
1.3.1 Data Flash
The data flash memory of 2 KB is mounted on the R5F102 products, but not on the R5F103 products.
Product Data Flash
R5F102 products
R5F1026A, R5F1027A, R5F102AA,
R5F10269, R5F10279, R5F102A9,
R5F10268, R5F10278, R5F102A8,
R5F10267, R5F10277, R5F102A7,
R5F10266 Note
2 KB
R5F103 products
R5F1036A, R5F1037A, R5F103AA,
R5F10369, R5F10379, R5F103A9,
R5F10368, R5F10378 R5F103A8,
R5F10367, R5F10377, R5F103A7,
R5F10366
Not mounted
Note The RAM in the R5F10266 has capacity as small as 256 bytes. Depending on the customer's program
specification, the stack area to execute the data flash library may not be kept and data may not be written to or
erased from the data flash memory.
Caution When the flash memory is rewritten via a user program, the code flash area and RAM area are used
because each library is used. When using the library, refer to RL78 Family Flash Self Programming
Library Type01 User's Manual and RL78 Family Data Flash Library Type04 User's Manual.
RL78/G12 1. OUTLINE
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 6 of 106
1.3.2 On-chip oscillator characteristics
(1) High-speed on-chip oscillator oscillation frequency of the R5F102 products
Oscillator Condition MIN MAX Unit
High-speed on-chip
oscillator oscillation
frequency accuracy
TA = -20 to +85°C -1.0 +1.0 %
TA = -40 to -20°C -1.5 +1.5
TA = +85 to +105°C -2.0 +2.0
(2) High-speed on-chip oscillator oscillation frequency of the R5F103 products
Oscillato
r
Condition MIN MAX Unit
High-speed on-chip
oscillator oscillation
frequency accuracy
TA = -40 to + 85°C -5.0 +5.0 %
1.3.3 Peripheral Functions
The following are differences in peripheral functions between the R5F102 products and the R5F103 products.
RL78/G12
R5F102 product R5F103 product
20, 24 pin
product
30 pin product 20, 24 pin
product
30 pin
product
Serial interface UART 1 channel 3 channels 1 channel
CSI 2 channels 3 channels 1 channel
Simplified I2C 2 channels 3 channels None
DMA function 2 channels None
Safety function CRC operation Yes None
RAM guard Yes None
SFR guard Yes None
RL78/G12 1. OUTLINE
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 7 of 106
1.4 Pin Configuration (Top View)
1.4.1 20-pin products
20-pin plastic LSSOP (4.4 × 6.5 mm, 0.65 mm pitch)
20
19
18
17
16
15
14
13
12
11
1
2
3
4
5
6
7
8
9
10
P21/ANI1/AV
REFM
P22/ANI2
P23/ANI3
P10/ANI16/PCLBUZ0/SCK00/SCL00
P11/ANI17/SI00/RxD0/SDA00 /TOOLRxD
P12/ANI18/SO00/TxD0/TOOLTxD
P13/ANI19/TI00/TO00/INTP2
P14/ANI20/TI01/TO01/INTP3
P61/KR5/SDAA0/(RxD0)
P60/KR4/SCLA0/(TxD0)
P20/ANI0/AV
REFP
P40/KR0/TOOL0
P137/INTP0
P122/KR2/X2/EXCLK/(TI02)/(INTP2)
P121/KR3/X1/(TI03)/(INTP3)
V
SS
V
DD
P42/ANI21/SCK01 /SCL01
NoteNote
/TI03/TO03
P41/ANI22/SO01 /SDA01
NoteNote
/TI02/TO02/INTP1
P125/KR1/SI01 /RESET
Note
Note
Note
RL78/G12
(Top View)
Note Provided only in the R5F102 products.
Remarks 1. For pin identification, see 1.5 Pin Identification.
2. Functions in parentheses in the above figure can be assigned via settings in the peripheral I/O redirection
register (PIOR). See Figure 4-8 Format of Peripheral I/O Redirection Register (PIOR) in the
RL78/G12 User’s Manual.
<R>
RL78/G12 1. OUTLINE
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 8 of 106
1.4.2 24-pin products
24-pin plastic HWQFN (4 × 4 mm, 0.5 mm pitch)
12 34 5 6
12
11
10
9
8
7
18 17 16 15 14 13
19
20
21
22
23
24
P61/KR5/SDAA0/(RxD0)
P60/KR4/SCLA0/(TxD0)
P03/KR9
P02/KR8/(SCK01)
Note
/(SCL01)
Not
e
P01/KR7/(SO01)
Note
/(SDA01)
Note
P00/KR6/(SI01)
Note
P22/ANI2
P21/ANI1/AV
REFM
P20/ANI0/AV
REFP
P42/ANI21/SCK01
Note
/SCL01
Note
/TI03/TO03
P41/ANI22/SO01
Note
/SDA01
Note
/TI02/TO02/INTP1
P40/KR0/TOOL0
INDEX MARK
exposed die pad
V
DD
V
SS
P122/KR2/X2/EXCLK/(TI02)/(INTP2)
P121/KR3/X1/(TI03)/(INTP3)
P137/INTP0
P125/KR1/SI01
Note
/RESET
P14/ANI20/TO01/INTP3
P13/ANI19/TO00/INTP2
P11/ANI17/SI00/RxD0/SDA00
Note
/TOOLRx
D
P12/ANI18/SO00/TxD0/TOOLTxD
P10/ANI16/PCLBUZ0/SCK00/SCL00
Note
P23/ANI3
RL78/G12
(Top View)
Note Provided only in the R5F102 products.
Remarks 1. For pin identification, see 1.5 Pin Identification.
2. Functions in parentheses in the above figure can be assigned via settings in the peripheral I/O redirection
register (PIOR). See Figure 4-8 Format of Peripheral I/O Redirection Register (PIOR) in the
RL78/G12 User’s Manual.
3. It is recommended to connect an exposed die pad to Vss.
RL78/G12 1. OUTLINE
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 9 of 106
1.4.3 30-pin products
30-pin plastic LSSOP (7.62 mm (300), 0.65 mm pitch)
30
29
28
27
26
25
24
23
22
21
20
19
18
17
16
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
P20/ANI0/AV
REFP
P01/ANI16/TO00/RxD1
Note
P00/ANI17/TI00/TxD1
Note
P120/ANI19
P40/TOOL0
RESET
P137/INTP0
P122/X2/EXCLK
P121/X1
REGC
V
SS
V
DD
P60/SCLA0
P61/SDAA0
P31/TI03/TO03/INTP4/PCLBUZ0
P21/ANI1/AV
REFM
P22/ANI2
P23/ANI3
P147/ANI18
P10/SCK00/SCL00
Note
/(TI07/TO07)
P11/SI00/RxD0/TOOLRxD/SDA00
Note
/(TI06/TO06)
P13/TxD2
Note
/SO20
Note
/(SDAA0)
Note
/(TI04/TO04)
P14/RxD2
Note
/SI20
Note
/SDA20
Note
/(SCLA0)
Note
/(TI03/TO03
)
P15/PCLBUZ1/SCK20
Note
/SCL20
Note
/(TI02/TO02)
P12/SO00/TxD0/TOOLTxD/(TI05/TO05)
P16/TI01/TO01/INTP5/(RxD0)
P17/TI02/TO02/(TxD0)
P30/INTP3/SCK11
Note
/SCL11
Note
P50/INTP1/SI11
Note
/SDA11
Note
P51/INTP2/SO11
Note
RL78/G12
(Top View)
Note Provided only in the R5F102 products.
Caution Connect the REGC pin to VSS via capacitor (0.47 to 1 µF).
Remarks 1. For pin identification, see 1.5 Pin Identification.
2. Functions in parentheses in the above figure can be assigned via settings in the peripheral I/O redirection
register (PIOR). See Figure 4-8 Format of Peripheral I/O Redirection Register (PIOR) in the
RL78/G12 User’s Manual.
RL78/G12 1. OUTLINE
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 10 of 106
1.5 Pin Identification
A
NI0 to ANI3,
A
NI16 to ANI22:
A
nalog input
REGC:
RESET:
Regulator Capacitance
Reset
A
VREFM:
nalog Reference Voltage Minus RxD0 to RxD2:
SCK00, SCK01, SCK11,
Receive Data
A
VREFP:
A
nalog reference voltage plus
EXCLK: External Clock Input
(Main System Clock)
SCK20:
SCL00, SCL01,
Serial Clock Input/Output
INTP0 to INTP5 Interrupt Request From Peripheral SCL11, SCL20, SCLA0:
SDA00, SDA01, SDA11,
Serial Clock Input/Output
KR0 to KR9: Key Return
P00 to P03: Port 0 SDA20, SDAA0: Serial Data Input/Output
P10 to P17: Port 1 SI00, SI01, SI11, SI20: Serial Data Input
P20 to P23: Port 2 SO00, SO01, SO11,
P30 to P31: Port 3 SO20: Serial Data Output
P40 to P42: Port 4 TI00 to TI07: Timer Input
P50, P51: Port 5 TO00 to TO07: Timer Output
P60, P61: Port 6 TOOL0: Data Input/Output for Tool
P120 to P122, P125: Port 12 TOOLRxD, TOOLTxD: Data Input/Output for External
Device P137: Port 13
P147: Port 14 TxD0 to TxD2: Transmit Data
PCLBUZ0, PCLBUZ1: Programmable Clock Output/
Buzzer Output
V
DD: Power supply
V
SS: Ground
X1, X2: Crystal Oscillator (Main System
Clock)
RL78/G12 1. OUTLINE
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 11 of 106
1.6 Block Diagram
1.6.1 20-pin products
PORT 1 P10 to P14
PORT 2 P20 to P23
4
PORT 4 P40 to P42
2
PORT 6
PORT 12
5
CRC
Note
PCLBUZ0
P60, P61
P121, P122, P125
RESET
Low Speed
On-chip
oscillator
15 kHz
9
6
4
KR0 to KR5
INTP0 to INTP3
ANI2, ANI3, ANI16 to ANI22
ANI0/AV
REFP
ANI1/AV
REFM
PORT 13 P137
3
3
Multiplier & divider
multiply-
accumulator
On-chip debug
BCD adjustment
IICA0
TOOL0
SCLA0
SDAA0
Power-on
reset/voltage
detector
Clock Generator
+
Reset Generator
High-Speed
on-chip oscillator
1 to 24 MHz
TOOL
TxD
TOOL
RxD
RL78
CPU
core
Buzzer/clock
output control
Key return
6ch
Interrupt control
4ch
Window watchdog
timer
12-bit Intervaltimer
10-bit A/D converter
11ch
RAM
1.5 KB
Interrupt control
DMA
Note
2ch
Code flash: 16 KB
Data flash: 2 KB
Note
SAU0 (2ch)
UART0
CSI00
CSI01
Note
IIC00
Note
IIC01
Note
TI00/TO00
TAU0 (4ch)
ch00
ch01
ch02
ch03
TI01/TO01
TI02/TO02
TI03/TO03
RxD0
TxD0
SCK00
SI00
SO00
SCK01
SI01
SO01
SCL00
SDA00
SCL01
SDA01
Main OSC
1 to 20 MHz
V
DD
V
SS
X1 X2/EXCLK
Note Provided only in the R5F102 products.
RL78/G12 1. OUTLINE
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 12 of 106
1.6.2 24-pin products
4
2
5
9
10
4
4
3
3
Code flash: 16 KB
Data flash: 2 KB
Note
TAU0 (4ch)
ch01
ch00
Interrupt control
RL78
CPU
core
Low Speed
On-chip
oscillator
15 KHz
DMA
Note
2ch
RAM
1.5 KB
Poer-on
reset/voltage
detector
High-Speed
On-chip
oscillator
1 to 24 MHz
Clock Generator
+
Reset Generator
ch02
ch03
UART0
SAU0 (2ch)
CSI00
IICA0
On-chip debug
Multiplier &
divider/
multiply-
accumulator
BCD adjustment
CSI01
Note
IIC00
Note
IIC01
Note
TI00/TO00
TI01/TO01
TI02/TO02
TI03/TO03
RxD0
TxD0
SCK00
SI00
SO00
SCK01
SI01
SO01
SCL00
SDA00
SCL01
SDA01
SCLA0
SDAA0
TOOL0
V
DD
V
SS
Port 0 P00 to P03
P10 to P14
P20 to P23
P40 to P42
P60, P61
P137
PCLBUZ0
KR0 to KR9
INTP0 to INTP3
ANI2, ANI3, ANI16 to ANI22
10-bit
A/D converter
11ch
12-bit Interval timer
Window watchdog
timer
CRC
Note
ANI0/AV
REFP
ANI1/AV
REFM
P121, P122, 125
Port 1
Port 2
Port 4
Port 6
Port 12
Key return
10ch
Interrupt control
4ch
Buzzer/clock
output control
Port 13
RESET
Main OSC
1to 20 MHz
X1 X2/EXCLK
TOOL
TxD
TOOL
RxD
IICA0
Note Provided only in the R5F102 products.
RL78/G12 1. OUTLINE
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 13 of 106
1.6.3 30-pin products
4
2
8
6
2
6
2
2
2
2
VOLTAGE
REGULATOR REGC
ANI0/AV
REFP
ANI1/AV
REFM
ANI2, ANI3,
ANI16 to ANI19
TAU (8 ch)
TI00
TO00
RxD0
TxD0
RxD2
TxD2
TOOL0
IICA0
On-chip debug
BCD adjustment
SCLA0
SDAA0
SCL20
SDA20
SCK20
SI20
SO20
SCL00
SDA00
SCL11
SDA11
RxD1
TxD1
SCK00
SI00
SO00
SCK11
SI11
SO11
TI01/TO01
TI02/TO02
TI03/TO03
(TI04/TO04)
(TI05/TO05)
(TI06/TO06)
(TI07/TO07)
ch0
ch1
ch2
ch3
ch4
ch5
ch6
ch7
SAU0 (4ch)
SAU0 (2ch)
Note
UART2
CSI20
IIC20
UART0
UART1
Note
CSI00
CSI11
Note
IIC00
Note
IIC11
Note
Low Speed
On-chip
oscillator
15 KHz
P00, P01
P10 to P17
P20 to P23
P30, P31
P40
P50, P51
P60, P61
P120
P121, P122
P137
P147
PCLBUZ0, PCLBUZ1
INTP0 to INTP5
Port 1
Port 0
Port 2
Port 3
Port 4
Port 5
Port 6
Port 12
Port 13
Port 14
Multiplier &
divider/
multiply-
accumulator
Code flash: 16 KB
Data flash: 2 KB
Note
Interrupt control
RL78
CPU
core
DMA
Note
2ch
RAM
2 KB
Poer-on
reset/voltage
detector
High-Speed
On-chip
oscillator
1 to 24 MHz
Clock Generator
+
Reset Generator
V
DD
V
SS
RESET
Main OSC
1 to 20 MHz
X1 X2/EXCLK
TOOL
TxD
TOOL
RxD
10-bit
A/D converter
8ch
12-bit Interval timer
Window watchdog
timer
CRC
Note
Interrupt control
6ch
Buzzer/clock
output control
Note Provided only in the R5F102 products.
Remark Functions in parentheses in the above figure can be assigned via settings in the peripheral I/O redirection
register (PIOR). See Figure 4-8 Format of Peripheral I/O Redirection Register (PIOR) in the RL78/G12
User’s Manual.
RL78/G12 1. OUTLINE
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 14 of 106
1.7 Outline of Functions
This outline describes the function at the time when Peripheral I/O redirection register (PIOR) is set to 00H.
(1/2)
Item 20-pin 24-pin 30-pin
R5F1026x R5F1036x R5F1027x R5F1037x R5F102Ax R5F103Ax
Code flash memory 2 to 16 KB Note 1 4 to 16 KB
Data flash memory 2 KB 2 KB 2 KB
RAM 256 B to 1.5 KB 512 B to 1.5 KB 512 B to 2KB
Address space 1 MB
Main
system
clock
High-speed system clock X1 (crystal/ceramic) oscillation, external main system clock input (EXCLK)
HS (High-speed main) mode : 1 to 20 MHz (VDD = 2.7 to 5.5 V),
HS (High-speed main) mode : 1 to 16 MHz (VDD = 2.4 to 5.5 V),
LS (Low-speed main) mode : 1 to 8 MHz (VDD = 1.8 to 5.5 V)
High-speed on-chip
oscillator clock
HS (High-speed main) mode : 1 to 24 MHz (VDD = 2.7 to 5.5 V),
HS (High-speed main) mode : 1 to 16 MHz (VDD = 2.4 to 5.5 V),
LS (Low-speed main) mode : 1 to 8 MHz (VDD = 1.8 to 5.5 V)
Low-speed on-chip oscillator clock 15 kHz (TYP)
General-purpose register (8-bit register × 8) × 4 banks
Minimum instruction execution time 0.04167 µs (High-speed on-chip oscillator clock: fIH = 24 MHz operation)
0.05 µs (High-speed system clock: fMX = 20 MHz operation)
Instruction set ● Data transfer (8/16 bits)
● Adder and subtractor/logical operation (8/16 bits)
● Multiplication (8 bits × 8 bits)
● Rotate, barrel shift, and bit manipulation (set, reset, test, and Boolean operation), etc.
I/O port Total 18 22 26
CMOS I/O 12
(N-ch O.D. I/O
[VDD withstand voltage]: 4)
16
(N-ch O.D. I/O
[VDD withstand voltage]: 5)
21
(N-ch O.D. I/O
[VDD withstand voltage]: 9)
CMOS input 4 4 3
N-ch open-drain I/O
(6 V tolerance)
2
Timer 16-bit timer 4 channels 8 channels
Watchdog timer 1 channel
12-bit Interval timer 1 channel
Timer output 4 channels
(PWM outputs: 3 Note 3)
8 channels
(PWM outputs: 7 Notes 2, 3)
Notes 1. The self-programming function cannot be used in the R5F10266 and R5F10366.
2. The maximum number of channels when PIOR0 is set to 1.
3. The number of PWM outputs varies depending on the setting of channels in use (the number of masters and
slaves). (See 6.9.3 Operation as multiple PWM output function in the RL78/G12 User’s Manual.)
Caution When the flash memory is rewritten via a user program, the code flash area and RAM area are used
because each library is used. When using the library, refer to RL78 Family Flash Self Programming
Library Type01 User's Manual and RL78 Family Data Flash Library Type04 User's Manual.
RL78/G12 1. OUTLINE
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 15 of 106
(2/2)
Item 20-pin 24-pin 30-pin
R5F1026x R5F1036x R5F1027x R5F1037x R5F102Ax R5F103Ax
Clock output/buzzer output 1 2
2.44 kHz to 10 MHz: (Peripheral hardware clock: fMAIN = 20 MHz operation)
8/10-bit resolution A/D converter 11 channels 8 channels
Serial interface [R5F1026x (20-pin), R5F1027x (24-pin)]
● CSI: 2 channels/Simplified I2C: 2 channels/UART: 1 channel
[R5F102Ax (30-pin)]
● CSI: 1 channel/Simplified I2C: 1 channel/UART: 1 channel
● CSI: 1 channel/Simplified I2C: 1 channel/UART: 1 channel
● CSI: 1 channel/Simplified I2C: 1 channel/UART: 1 channel
[R5F1036x (20-pin), R5F1037x (24-pin)]
● CSI: 1 channel/Simplified I2C: 0 channel/UART: 1 channel
[R5F103Ax (30-pin)]
● CSI: 1 channel/Simplified I2C: 0 channel/UART: 1 channel
I
2C bus 1 channel
Multiplier and divider/multiply-
accumulator
● 16 bits × 16 bits = 32 bits (unsigned or signed)
● 32 bits × 32 bits = 32 bits (unsigned)
● 16 bits × 16 bits + 32 bits = 32 bits (unsigned or signed)
DMA controller 2 channels 2 channels 2 channels
Vectored interrupt
sources
Internal 18 16 18 16 26 19
External 5 6
Key interrupt 6 10
Reset ● Reset by RESET pin
● Internal reset by watchdog timer
● Internal reset by power-on-reset
● Internal reset by voltage detector
● Internal reset by illegal instruction execution Note
● Internal reset by RAM parity error
● Internal reset by illegal-memory access
Power-on-reset circuit ● Power-on-reset: 1.51 V (TYP)
● Power-down-reset: 1.50 V (TYP)
Voltage detector ● Rising edge : 1.88 to 4.06 V (12 stages)
● Falling edge : 1.84 to 3.98 V (12 stages)
On-chip debug function Provided
Power supply voltage VDD = 1.8 to 5.5 V
Operating ambient temperature TA = –40 to +85°C (A: Consumer applications, D: Industrial applications), TA = –40 to +105°C
(G: Industrial applications)
Note The illegal instruction is generated when instruction code FFH is executed.
Reset by the illegal instruction execution not issued by emulation with the in-circuit emulator or on-chip debug
emulator.
RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 16 of 106
2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C)
This chapter describes the following electrical specifications.
Target products A: Consumer applications TA = -40 to +85°C
R5F102xxAxx, R5F103xxAxx
D: Industrial applications TA = -40 to +85°C
R5F102xxDxx, R5F103xxDxx
G: Industrial applications when TA = -40 to +105°C products is used in the range of TA = -40 to +85°C
R5F102xxGxx
Cautions 1. The RL78 microcontrollers have an on-chip debug function, which is provided for development and
evaluation. Do not use the on-chip debug function in products designated for mass production,
because the guaranteed number of rewritable times of the flash memory may be exceeded when this
function is used, and product reliability therefore cannot be guaranteed. Renesas Electronics is not
liable for problems occurring when the on-chip debug function is used.
2. The pins mounted depend on the product. Refer to 2.1 Port Functions to 2.2.1 Functions for each
product in the RL78/G12 User’s Manual.
RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 17 of 106
2.1 Absolute Maximum Ratings
Absolute Maximum Ratings (TA = 25°C)
Parameter Symbols Conditions Ratings Unit
Supply Voltage VDD –0.5 to + 6.5 V
REGC terminal input
voltageNote1
VIREGC REGC –0.3 to +2
and –0.3 to VDD + 0.3
Note 2
V
Input Voltage VI1 Other than P60, P61 –0.3 to VDD + 0.3Note 3 V
VI2 P60, P61 (N-ch open drain) –0.3 to 6.5 V
Output Voltage VO –0.3 to VDD + 0.3Note 3 V
Analog input voltage VAI 20-, 24-pin products: ANI0 to ANI3, ANI16 to ANI22
30-pin products: ANI0 to ANI3, ANI16 to ANI19
–0.3 to VDD + 0.3
and –0.3 to
AVREF(+)+0.3 Notes 3, 4
V
Output current, high
IOH1 Per pin Other than P20 to P23 –40 mA
Total of all pins All the terminals other than P20 to P23 –170 mA
20-, 24-pin products: P40 to P42
30-pin products: P00, P01, P40, P120
–70 mA
20-, 24-pin products: P00 to P03Note 5,
P10 to P14
30-pin products: P10 to P17, P30, P31,
P50, P51, P147
–100 mA
IOH2 Per pin P20 to P23 –0.5 mA
Total of all pins –2 mA
Output current, low IOL1 Per pin Other than P20 to P23 40 mA
Total of all pins All the terminals other than P20 to P23 170 mA
20-, 24-pin products: P40 to P42
30-pin products: P00, P01, P40, P120
70 mA
20-, 24-pin products: P00 to P03Note 5,
P10 to P14, P60, P61
30-pin products: P10 to P17, P30, P31,
P50, P51, P60, P61, P147
100 mA
IOL2 Per pin P20 to P23 1 mA
Total of all pins 5 mA
Operating ambient
temperature
TA –40 to +85 °C
Storage temperature Tstg –65 to +150 °C
Notes 1. 30-pin product only.
2. Connect the REGC pin to VSS via a capacitor (0.47 to 1 µF). This value determines the absolute maximum
rating of the REGC pin. Do not use it with voltage applied.
3. Must be 6.5 V or lower.
4. Do not exceed AVREF(+) + 0.3 V in case of A/D conversion target pin.
5. 24-pin products only.
Caution Product quality may suffer if the absolute maximum rating is exceeded even momentarily for any
parameter. That is, the absolute maximum ratings are rated values at which the product is on the
verge of suffering physical damage, and therefore the product must be used under conditions that
ensure that the absolute maximum ratings are not exceeded.
Remarks 1. Unless specified otherwise, the characteristics of alternate-function pins are the same as those of the port
pins.
2. AV
REF(+) : + side reference voltage of the A/D converter.
3. V
SS : Reference voltage
RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 18 of 106
2.2 Oscillator Characteristics
2.2.1 X1 oscillator characteristics
(TA = –40 to +85°C, 1.8 V ≤ VDD ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter Resonator Conditions MIN. TYP. MAX. Unit
X1 clock oscillation
frequency (fX)Note
Ceramic resonator /
crystal oscillator
2.7 V ≤ VDD ≤ 5.5 V 1.0 20.0 MHz
1.8 V ≤ VDD < 2.7 V 1.0 8.0
Note Indicates only permissible oscillator frequency ranges. Refer to AC Characteristics for instruction execution
time. Request evaluation by the manufacturer of the oscillator circuit mounted on a board to check the
oscillator characteristics.
Caution Since the CPU is started by the high-speed on-chip oscillator clock after a reset release, check the
X1 clock oscillation stabilization time using the oscillation stabilization time counter status register
(OSTC) by the user. Determine the oscillation stabilization time of the OSTC register and the
oscillation stabilization time select register (OSTS) after sufficiently evaluating the oscillation
stabilization time with the resonator to be used.
Remark When using the X1 oscillator, refer to 5.4 System Clock Oscillator in the RL78/G12 User’s Manual.
2.2.2 On-chip oscillator characteristics
(TA = –40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Oscillators Parameters Conditions MIN. TYP. MAX. Unit
High-speed on-chip oscillator
clock frequency Notes 1, 2
fIH 1 24 MHz
High-speed on-chip oscillator
clock frequency accuracy R5F102 products TA = –20 to +85°C -1.0 +1.0 %
TA = –40 to –20°C -1.5 +1.5 %
R5F103 products -5.0 +5.0 %
Low-speed on-chip oscillator
clock frequency
fIL 15 kHz
Low-speed on-chip oscillator
clock frequency accuracy
-15 +15 %
Notes 1. High-speed on-chip oscillator frequency is selected by bits 0 to 3 of option byte (000C2H) and bits 0 to 2 of
HOCODIV register.
2. This only indicates the oscillator characteristics. Refer to AC Characteristics for instruction execution time.
RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 19 of 106
2.3 DC Characteristics
2.3.1 Pin characteristics
(TA = –40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V) (1/4)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Output current, highNote 1 IOH1 20-, 24-pin products:
Per pin for P00 to P03Note 4,
P10 to P14, P40 to P42
30-pin products:
Per pin for P00, P01, P10 to P17, P30,
P31, P40, P50, P51, P120, P147
–10.0
Note 2
mA
20-, 24-pin products:
Total of P40 to P42
30-pin products:
Total of P00, P01, P40, P120
(When duty ≤ 70% Note 3)
4.0 V ≤ VDD ≤ 5.5 V
–30.0 mA
2.7 V ≤ VDD < 4.0 V
–6.0 mA
1.8 V ≤ VDD < 2.7 V –4.5 mA
20-, 24-pin products:
Total of P00 to P03Note 4, P10 to P14
30-pin products:
Total of P10 to P17, P30, P31,
P50, P51, P147
(When duty ≤ 70% Note 3)
4.0 V ≤ VDD ≤ 5.5 V
–80.0 mA
2.7 V ≤ VDD < 4.0 V
–18.0 mA
1.8 V ≤ VDD < 2.7 V –10.0 mA
Total of all pins (When duty ≤ 70%Note 3)
–100 mA
IOH2 Per pin for P20 to P23 –0.1 mA
Total of all pins –0.4 mA
Notes 1. value of current at which the device operation is guaranteed even if the current flows from the VDD pin to an
output pin.
2. However, do not exceed the total current value.
3. The output current value under conditions where the duty factor ≤ 70%.
If duty factor > 70%: The output current value can be calculated with the following expression (where n
represents the duty factor as a percentage).
Total output current of pins = (IOH × 0.7)/(n × 0.01)
<Example> Where n = 80% and IOH = –10.0 mA
Total output current of pins = (–10.0 × 0.7)/(80 × 0.01) –8.7 mA
However, the current that is allowed to flow into one pin does not vary depending on the duty factor. A
current higher than the absolute maximum rating must not flow into one pin.
4. 24-pin products only.
Caution P10 to P12 and P41 for 20-pin products, P01, P10 to P12, and P41 for 24-pin products, and P00, P10
to P15, P17, and P50 for 30-pin products do not output high level in N-ch open-drain mode.
Remark Unless specified otherwise, the characteristics of alternate-function pins are the same as those of the port
pins.
RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 20 of 106
(TA = –40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V) (2/4)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Output current, lowNote 1 IOL1 20-, 24-pin products:
Per pin for P00 to P03Note 4,
P10 to P14, P40 to P42
30-pin products:
Per pin for P00, P01, P10 to P17, P30,
P31, P40, P50, P51, P120, P147
20.0
Note 2
mA
Per pin for P60, P61
15.0
Note 2
mA
20-, 24-pin products:
Total of P40 to P42
30-pin products:
Total of P00, P01, P40, P120
(When duty ≤ 70% Note 3)
4.0 V ≤ VDD ≤ 5.5 V
60.0 mA
2.7 V ≤ VDD < 4.0 V
9.0 mA
1.8 V ≤ VDD < 2.7 V 1.8 mA
20-, 24-pin products:
Total of P00 to P03Note 4,
P10 to P14, P60, P61
30-pin products:
Total of P10 to P17, P30, P31, P50,
P51, P60, P61, P147
(When duty ≤ 70% Note 3)
4.0 V ≤ VDD ≤ 5.5 V 80.0 mA
2.7 V ≤ VDD < 4.0 V 27.0 mA
1.8 V ≤ VDD < 2.7 V 5.4 mA
Total of all pins (When duty ≤ 70%Note 3)
140 mA
IOL2 Per pin for P20 to P23 0.4 mA
Total of all pins 1.6 mA
Notes 1. Value of current at which the device operation is guaranteed even if the current flows from an output pin to
the VSS pin.
2. However, do not exceed the total current value.
3. The output current value under conditions where the duty factor ≤ 70%.
If duty factor > 70%: The output current value can be calculated with the following expression (where n
represents the duty factor as a percentage).
Total output current of pins = (IOL × 0.7)/(n × 0.01)
<Example> Where n = 80% and IOL = 10.0 mA
Total output current of pins = (10.0 × 0.7)/(80 × 0.01) 8.7 mA
However, the current that is allowed to flow into one pin does not vary depending on the duty factor. A
current higher than the absolute maximum rating must not flow into one pin.
4. 24-pin products only.
Remark Unless specified otherwise, the characteristics of alternate-function pins are the same as those of the port
pins.
RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 21 of 106
(TA = –40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V) (3/4)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Input voltage, high VIH1 Normal input buffer
20-, 24-pin products: P00 to P03Note 2, P10 to P14,
P40 to P42
30-pin products: P00, P01, P10 to P17, P30, P31,
P40, P50, P51, P120, P147
0.8VDD VDD V
VIH2 TTL input buffer
20-, 24-pin products: P10, P11
30-pin products: P01, P10,
P11, P13 to P17
4.0 V ≤ VDD ≤ 5.5 V 2.2 VDD V
3.3 V ≤ VDD < 4.0 V 2.0 VDD V
1.8 V ≤ VDD < 3.3 V 1.5 VDD V
VIH3 P20 to P23 0.7VDD VDD V
VIH4 P60, P61 0.7VDD 6.0 V
VIH5 P121, P122, P125Note 1, P137, EXCLK, RESET 0.8VDD VDD V
Input voltage, low VIL1 Normal input buffer
20-, 24-pin products: P00 to P03Note 2, P10 to P14,
P40 to P42
30-pin products: P00, P01, P10 to P17, P30, P31,
P40, P50, P51, P120, P147
0 0.2VDD V
VIL2 TTL input buffer
20-, 24-pin products: P10, P11
30-pin products: P01, P10,
P11, P13 to P17
4.0 V ≤ VDD ≤ 5.5 V 0 0.8 V
3.3 V ≤ VDD < 4.0 V 0 0.5 V
1.8 V ≤ VDD < 3.3 V 0 0.32 V
VIL3 P20 to P23 0 0.3VDD V
VIL4 P60, P61 0 0.3VDD V
VIL5 P121, P122, P125Note 1, P137, EXCLK, RESET 0 0.2VDD V
Output voltage, high VOH1 20-, 24-pin products:
P00 to P03Note 2, P10 to P14,
P40 to P42
30-pin products:
P00, P01, P10 to P17, P30,
P31, P40, P50, P51, P120,
P147
4.0 V ≤ VDD ≤ 5.5 V,
IOH1 = –10.0 mA
VDD–1.5 V
4.0 V ≤ VDD ≤ 5.5 V,
IOH1 = –3.0 mA
VDD–0.7 V
2.7 V ≤ VDD ≤ 5.5 V,
IOH1 = –2.0 mA
VDD–0.6 V
1.8 V ≤ VDD ≤ 5.5 V,
IOH1 = –1.5 mA
VDD–0.5 V
VOH2 P20 to P23 IOH2 = –100 µA VDD–0.5 V
Notes 1. 20, 24-pin products only.
2. 24-pin products only.
Caution The maximum value of VIH of pins P10 to P12 and P41 for 20-pin products, P01, P10 to P12, and P41
for 24-pin products, and P00, P10 to P15, P17, and P50 for 30-pin products is VDD even in N-ch open-
drain mode.
High level is not output in the N-ch open-drain mode.
Remark Unless specified otherwise, the characteristics of alternate-function pins are the same as those of the port
pins.
RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 22 of 106
(TA = –40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V) (4/4)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Output voltage, low VOL1 20-, 24-pin products:
P00 to P03Note, P10 to P14,
P40 to P42
30-pin products: P00, P01,
P10 to P17, P30, P31, P40,
P50, P51, P120, P147
4.0 V ≤ VDD ≤ 5.5 V,
IOL1 = 20.0 mA
1.3 V
4.0 V ≤ VDD ≤ 5.5 V,
IOL1 = 8.5 mA
0.7 V
2.7 V ≤ VDD ≤ 5.5 V,
IOL1 = 3.0 mA
0.6 V
2.7 V ≤ VDD ≤ 5.5 V,
IOL1 = 1.5 mA
0.4 V
1.8 V ≤ VDD ≤ 5.5 V,
IOL1 = 0.6 mA
0.4 V
VOL2 P20 to P23 IOL2 = 400 µA 0.4 V
VOL3 P60, P61 4.0 V ≤ VDD ≤ 5.5 V,
IOL1 = 15.0 mA
2.0 V
4.0 V ≤ VDD ≤ 5.5 V,
IOL1 = 5.0 mA
0.4 V
2.7 V ≤ VDD ≤ 5.5 V,
IOL1 = 3.0 mA
0.4 V
1.8 V ≤ VDD ≤ 5.5 V,
IOL1 = 2.0 mA
0.4 V
Input leakage current,
high
ILIH1 Other than P121,
P122
VI = VDD 1 µA
ILIH2 P121, P122
(X1, X2/EXCLK)
VI = VDD Input port or external
clock input
1 µA
When resonator
connected
10 µA
Input leakage current,
low
ILIL1 Other than P121,
P122
VI = VSS –1 µA
ILIL2 P121, P122
(X1, X2/EXCLK)
VI = VSS Input port or external
clock input
–1 µA
When resonator
connected
–10 µA
On-chip pull-up
resistance
RU 20-, 24-pin products:
P00 to P03Note, P10 to P14,
P40 to P42, P125, RESET
30-pin products: P00, P01,
P10 to P17, P30, P31, P40,
P50, P51, P120, P147
VI = VSS, input port 10 20 100
Note 24-pin products only.
Remark Unless specified otherwise, the characteristics of alternate-function pins are the same as those of the port
pins.
RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 23 of 106
2.3.2 Supply current characteristics
(1) 20-, 24-pin products
(TA = 40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V) (1/2)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Supply
currentNote 1
IDD1 Operating
mode
HS(High-speed
main) mode
Note 4
f
IH
= 24 MHz
Note 3
Basic
operation
VDD = 5.0 V 1.5 mA
VDD = 3.0 V 1.5
Normal
operation
VDD = 5.0 V 3.3 5.0 mA
VDD = 3.0 V 3.3 5.0
fIH = 16 MHzNote 3 VDD = 5.0 V 2.5 3.7 mA
VDD = 3.0 V 2.5 3.7
LS(Low-speed
main) mode
Note 4
fIH = 8 MHzNote 3 VDD = 3.0 V 1.2 1.8 mA
VDD = 2.0 V 1.2 1.8
HS(High-speed
main) mode
Note4
fMX = 20 MHzNote 2,
VDD = 5.0 V
Square wave input 2.8 4.4 mA
Resonator connection 3.0 4.6
fMX = 20 MHzNote 2,
VDD = 3.0 V
Square wave input 2.8 4.4 mA
Resonator connection 3.0 4.6
fMX = 10 MHzNote 2,
VDD = 5.0 V
Square wave input 1.8 2.6 mA
Resonator connection 1.8 2.6
fMX = 10 MHzNote 2,
VDD = 3.0 V
Square wave input 1.8 2.6 mA
Resonator connection 1.8 2.6
LS(Low-speed
main) mode
Note 4
fMX = 8 MHzNote 2,
VDD = 3.0 V
Square wave input 1.1 1.7 mA
Resonator connection 1.1 1.7
fMX = 8 MHzNote 2,
VDD = 2.0 V
Square wave input 1.1 1.7 mA
Resonator connection 1.1 1.7
Notes 1. Total current flowing into VDD, including the input leakage current flowing when the level of the input pin is
fixed to VDD or VSS. The values below the MAX. column include the peripheral operation current. However,
not including the current flowing into the A/D converter, LVD circuit, I/O port, and on-chip pull-up/pull-down
resistors and the current flowing during data flash rewrite.
2. When high-speed on-chip oscillator clock is stopped.
3. When high-speed system clock is stopped
4. Relationship between operation voltage width, operation frequency of CPU and operation mode is as
follows.
HS (High speed main) mode: VDD = 2.7 V to 5.5 V @1 MHz to 24 MHz
V
DD = 2.4 V to 5.5 V @1 MHz to 16 MHz
LS (Low speed main) mode: VDD = 1.8 V to 5.5 V @1 MHz to 8 MHz
Remarks 1. f
MX: High-speed system clock frequency (X1 clock oscillation frequency or external main system clock
frequency)
2. f
IH: high-speed on-chip oscillator clock frequency
3. Temperature condition of the TYP. value is TA = 25°C.
RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 24 of 106
(1) 20-, 24-pin products
(TA = 40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V) (2/2)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Supply
current Note 1
IDD2Note 2 HALT
mode
HS (High-speed
main) modeNote 6
fIH = 24 MHzNote 4
VDD = 5.0 V 440 1210 µA
VDD = 3.0 V 440 1210
fIH = 16 MHzNote 4 VDD = 5.0 V 400 950 µA
VDD = 3.0 V 400 950
LS (Low-speed
main) modeNote 6
fIH = 8 MHzNote 4 VDD = 3.0 V 270 542 µA
VDD = 2.0 V 270 542
HS (High-speed
main) modeNote 6
fMX = 20 MHzNote 3,
VDD = 5.0 V
Square wave input 280 1000 µA
Resonator connection 450 1170
fMX = 20 MHzNote 3,
VDD = 3.0 V
Square wave input 280 1000 µA
Resonator connection 450 1170
fMX = 10 MHzNote 3,
VDD = 5.0 V
Square wave input 190 590 µA
Resonator connection 260 660
fMX = 10 MHzNote 3,
VDD = 3.0 V
Square wave input 190 590 µA
Resonator connection 260 660
LS (Low-speed
main) modeNote 6
fMX = 8 MHzNote 3,
VDD = 3.0 V
Square wave input 110 360 µA
Resonator connection 150 416
fMX = 8 MHzNote 3,
VDD = 2.0 V
Square wave input 110 360 µA
Resonator connection 150 416
IDD3Note 5 STOP
mode
TA = –40°C 0.19 0.50 µA
TA = +25°C 0.24 0.50
TA = +50°C 0.32 0.80
TA = +70°C 0.48 1.20
TA = +85°C 0.74 2.20
Notes 1. Total current flowing into VDD, including the input leakage current flowing when the level of the input pin is
fixed to VDD or VSS. The values below the MAX. column include the peripheral operation current. However,
not including the current flowing into the A/D converter, LVD circuit, I/O port, and on-chip pull-up/pull-down
resistors and the current flowing during data flash rewrite.
2. During HALT instruction execution by flash memory.
3. When high-speed on-chip oscillator clock is stopped.
4. When high-speed system clock is stopped.
5. Not including the current flowing into the 12-bit interval timer and watchdog timer.
6. Relationship between operation voltage width, operation frequency of CPU and operation mode is as
follows.
HS (High speed main) mode: VDD = 2.7 V to 5.5 V @1 MHz to 24 MHz
VDD = 2.4 V to 5.5 V @1 MHz to 16 MHz
LS (Low speed main) mode: VDD = 1.8 V to 5.5 V @1 MHz to 8 MHz
Remarks 1. f
MX: High-speed system clock frequency (X1 clock oscillation frequency or external main system clock
frequency)
2. f
IH: high-speed on-chip oscillator clock frequency
3. Except temperature condition of the TYP. value is TA = 25°C, other than STOP mode
RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 25 of 106
(2) 30-pin products
(TA = 40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V) (1/2)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Supply
currentNote 1
IDD1 Operating
mode
HS (High-speed
main) mode
Note 4
f
IH
= 24 MHz
Note 3
Basic
operation
VDD = 5.0 V 1.5 mA
VDD = 3.0 V 1.5
Normal
operation
VDD = 5.0 V 3.7 5.5 mA
VDD = 3.0 V 3.7 5.5
f
IH
= 16 MHz
Note 3
VDD = 5.0 V 2.7 4.0 mA
VDD = 3.0 V 2.7 4.0
LS (Low-speed
main) mode
Note 4
f
IH
= 8 MHz
Note 3
VDD = 3.0 V 1.2 1.8 mA
VDD = 2.0 V 1.2 1.8
HS (High-speed
main) mode
Note 4
f
MX
= 20 MHz
Note 2
,
V
DD
= 5.0 V
Square wave input 3.0 4.6 mA
Resonator connection 3.2 4.8
f
MX
= 20 MHz
Note 2
,
V
DD
= 3.0 V
Square wave input 3.0 4.6 mA
Resonator connection 3.2 4.8
f
MX
= 10 MHz
Note 2
,
V
DD
= 5.0 V
Square wave input 1.9 2.7 mA
Resonator connection 1.9 2.7
f
MX
= 10 MHz
Note 2
,
V
DD
= 3.0 V
Square wave input 1.9 2.7 mA
Resonator connection 1.9 2.7
LS (Low-speed
main) mode
Note 4
f
MX
= 8 MHz
Note 2
,
V
DD
= 3.0 V
Square wave input 1.1 1.7 mA
Resonator connection 1.1 1.7
f
MX
= 8 MHz
Note 2
,
V
DD
= 2.0 V
Square wave input 1.1 1.7 mA
Resonator connection 1.1 1.7
Notes 1. Total current flowing into VDD, including the input leakage current flowing when the level of the input pin is
fixed to VDD or VSS. The values below the MAX. column include the peripheral operation current. However,
not including the current flowing into the A/D converter, LVD circuit, I/O port, and on-chip pull-up/pull-down
resistors and the current flowing during data flash rewrite.
2. When high-speed on-chip oscillator clock is stopped.
3. When high-speed system clock is stopped
4. Relationship between operation voltage width, operation frequency of CPU and operation mode is as
follows.
HS (High speed main) mode: VDD = 2.7 V to 5.5 V @1 MHz to 24 MHz
V
DD = 2.4 V to 5.5 V @1 MHz to 16 MHz
LS (Low speed main) mode: VDD = 1.8 V to 5.5 V @1 MHz to 8 MHz
Remarks 1. f
MX: High-speed system clock frequency (X1 clock oscillation frequency or external main system clock
frequency)
2. f
IH: high-speed on-chip oscillator clock frequency
3. Temperature condition of the TYP. value is TA = 25°C.
RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 26 of 106
(2) 30-pin products
(TA = 40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V) (2/2)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Supply
currentNote 1
IDD2Note 2 HALT
mode
HS (High-speed
main) mode
Note 6
fIH = 24 MHzNote 4
VDD = 5.0 V 440 1280 µA
VDD = 3.0 V 440 1280
fIH = 16 MHzNote 4 VDD = 5.0 V 400 1000 µA
VDD = 3.0 V 400 1000
LS (Low-speed
main) mode
Note 6
fIH = 8 MHzNote 4 VDD = 3.0 V 260 530 µA
VDD = 2.0 V 260 530
HS (High-speed
main) mode
Note 6
fMX = 20 MHzNote 3,
VDD = 5.0 V
Square wave input 280 1000 µA
Resonator connection 450 1170
fMX = 20 MHzNote 3,
VDD = 3.0 V
Square wave input 280 1000 µA
Resonator connection 450 1170
fMX = 10 MHzNote 3,
VDD = 5.0 V
Square wave input 190 600 µA
Resonator connection 260 670
fMX = 10 MHzNote 3,
VDD = 3.0 V
Square wave input 190 600 µA
Resonator connection 260 670
LS (Low-speed
main) mode
Note 6
fMX = 8 MHzNote 3,
VDD = 3.0 V
Square wave input 95 330 µA
Resonator connection 145 380
fMX = 8 MHz Note 3,
VDD = 2.0 V
Square wave input 95 330 µA
Resonator connection 145 380
IDD3Note 5 STOP
mode
TA = –40°C 0.18 0.50 µA
TA = +25°C 0.23 0.50
TA = +50°C 0.30 1.10
TA = +70°C 0.46 1.90
TA = +85°C 0.75 3.30
Notes 1. Total current flowing into VDD, including the input leakage current flowing when the level of the input pin is
fixed to VDD or VSS. The values below the MAX. column include the peripheral operation current. However,
not including the current flowing into the A/D converter, LVD circuit, I/O port, and on-chip pull-up/pull-down
resistors and the current flowing during data flash rewrite.
2. During HALT instruction execution by flash memory.
3. When high-speed on-chip oscillator clock is stopped.
4. When high-speed system clock is stopped.
5. Not including the current flowing into the 12-bit interval timer and watchdog timer.
6. Relationship between operation voltage width, operation frequency of CPU and operation mode is as
follows.
HS (High speed main) mode: VDD = 2.7 V to 5.5 V @1 MHz to 24 MHz
VDD = 2.4 V to 5.5 V @1 MHz to 16 MHz
LS (Low speed main) mode: VDD = 1.8 V to 5.5 V @1 MHz to 8 MHz
Remarks 1. f
MX: High-speed system clock frequency (X1 clock oscillation frequency or external main system clock
frequency)
2. f
IH: high-speed on-chip oscillator clock frequency
3. Except STOP mode, temperature condition of the TYP. value is TA = 25°C.
RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 27 of 106
(3) Peripheral functions (Common to all products)
(TA = –40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Low-speed
onchip oscillator
operating current
IFIL Note 1 0.20 µA
12-bit interval
timer operating
current
ITMKA
Notes 1, 2, 3
0.02 µA
Watchdog timer
operating current
IWDT
Notes 1, 2, 4
fIL = 15 kHz 0.22 µA
A/D converter
operating current
IADCNotes 1, 5 When conversion at
maximum speed
Normal mode, AVREFP = VDD = 5.0 V 1.30 1.70 mA
Low voltage mode, AVREFP = VDD = 3.0 V 0.50 0.70 mA
A/D converter
reference voltage
operating current
IADREF Note 1 75.0 µA
Temperature
sensor operating
current
ITMPS Note 1 75.0 µA
LVD operating
current
ILVD Notes 1, 6 0.08 µA
Self-
programming
operating current
IFSP Notes 1, 8 2.00 12.20 mA
BGO operating
current
IBGO Notes 1, 7 2.00 12.20 mA
SNOOZE
operating current
ISNOZ Note 1 ADC operation The mode is performed Note 9 0.50 0.60 mA
The A/D conversion operations are
performed, Low voltage mode,
AVREFP = VDD = 3.0 V
1.20 1.44 mA
CSI/UART operation 0.70 0.84 mA
Notes 1. Current flowing to the VDD.
2. When high speed on-chip oscillator and high-speed system clock are stopped.
3. Current flowing only to the 12-bit interval timer (excluding the operating current of the low-speed on-chip
oscillator). The current value of the RL78 microcontrollers is the sum of IDD1, IDD2 or IDD3, and IFIL and ITMKA when
the 12-bit interval timer operates.
4. Current flowing only to the watchdog timer (including the operating current of the low-speed on-chip oscillator).
The current value of the RL78 microcontrollers is the sum of IDD1, IDD2 or IDD3 and IWDT when the watchdog timer
operates.
5. Current flowing only to the A/D converter. The current value of the RL78 microcontrollers is the sum of IDD1 or
IDD2 and IADC when the A/D converter operates in an operation mode or the HALT mode.
6. Current flowing only to the LVD circuit. The current value of the RL78 microcontrollers is the sum of IDD1, IDD2 or
IDD3 and ILVD when the LVD circuit operates.
7. Current flowing only during data flash rewrite.
8. Current flowing only during self programming.
9. For shift time to the SNOOZE mode, see 17.3.3 SNOOZE mode in the RL78/G12 User’s Manual.
Remarks 1. fIL: Low-speed on-chip oscillator clock frequency
2. Temperature condition of the TYP. value is TA = 25°C
RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 28 of 106
2.4 AC Characteristics
(TA = –40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Items Symbol Conditions MIN. TYP. MAX. Unit
Instruction cycle (minimum
instruction execution time)
TCY Main system
clock (fMAIN)
operation
HS (High-
speed main)
mode
2.7 V ≤ VDD ≤ 5.5 V 0.04167 1 µs
2.4 V ≤ VDD < 2.7 V 0.0625 1 µs
LS (Low-
speed main)
mode
1.8 V ≤ VDD ≤ 5.5 V 0.125 1 µs
During self
programming
HS (High-
speed main)
mode
2.7 V ≤ VDD ≤ 5.5 V 0.04167 1 µs
2.4 V ≤ VDD < 2.7 V 0.0625 1 µs
LS (Low-
speed main)
mode
1.8 V ≤ VDD ≤ 5.5 V 0.125 1 µs
External main system clock
frequency
fEX 2.7 V ≤ VDD ≤ 5.5 V 1.0 20.0 MHz
2.4 V ≤ VDD < 2.7 V 1.0 16.0 MHz
1.8 V ≤ VDD < 2.4 V 1.0 8.0 MHz
External main system clock
input high-level width, low-
level width
tEXH, tEXL 2.7 V ≤ VDD ≤ 5.5 V 24 ns
2.4 V ≤ VDD < 2.7 V 30 ns
1.8 V ≤ VDD < 2.4 V 60 ns
TI00 to TI07 input high-level
width, low-level width
tTIH, tTIL
1/f
MCK
+
10
ns
TO00 to TO07 output
frequency
fTO 4.0 V ≤ VDD ≤ 5.5 V
12 MHz
2.7 V ≤ VDD < 4.0 V
8 MHz
1.8 V ≤ VDD < 2.7 V
4 MHz
PCLBUZ0, or PCLBUZ1
output frequency
fPCL 4.0 V ≤ VDD ≤ 5.5 V
16 MHz
2.7 V ≤ VDD < 4.0 V
8 MHz
1.8 V ≤ VDD < 2.7 V
4 MHz
INTP0 to INTP5 input high-
level width, low-level width
tINTH, tINTL 1 µs
KR0 to KR9 input available
width
tKR 250 ns
RESET low-level width tRSL 10 µs
Remark fMCK: Timer array unit operation clock frequency
(Operation clock to be set by the timer clock select register 0 (TPS0) and the CKS0n bit of timer mode
register 0n (TMR0n). n: Channel number (n = 0 to 7))
RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 29 of 106
Minimum Instruction Execution Time during Main System Clock Operation
TCY vs VDD (HS (high-speed main) mode)
When the high-speed on-chip oscillator clock is selected
During self programming
When high-speed system clock is selected
Supply voltage V
DD
[V]
1.0
0.1
0
10
1.0 2.0 3.0 4.0 5.0 6.0
5.5
2.7
0.01
2.4
0.04167
0.0625
Cycle time T
CY
[µs]
TCY vs VDD (LS (low-speed main) mode)
1.0
0.1
0
10
1.0 2.0 3.0 4.0 5.0 6.0
5.5
0.01
1.8
0.125
Cycle time T
CY
[µs]
Supply voltage V
DD
[V]
When the high-speed on-chip oscillator clock is selected
During self programming
When high-speed system clock is selected
RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 30 of 106
AC Timing Test Point
V
IH
/V
OH
V
IL
/V
OL
Test points V
IH
/V
OH
V
IL
/V
OL
External Main System Clock Timing
EXCLK
1/fEX
tEXL tEXH
TI/TO Timing
TI00 to TI07
tTIL tTIH
TO00 to TO07
1/fTO
Interrupt Request Input Timing
INTP0 to INTP5
t
INTL
t
INTH
Key Interrupt Input Timing
KR0 to KR9
t
KR
RESET Input Timing
RESET
t
RSL
RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 31 of 106
2.5 Peripheral Functions Characteristics
AC Timing Test Point
VIH/VOH
VIL/VOL
Test points VIH/VOH
VIL/VOL
2.5.1 Serial array unit
(1) During communication at same potential (UART mode)
(TA = –40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter Symbol Conditions HS (high-speed
main) Mode
LS (low-speed
main) Mode
Unit
MIN. MAX. MIN. MAX.
Transfer rate
Note 1
f
MCK/6 fMCK/6 bps
Theoretical value of the maximum transfer rate
fCLK = fMCKNote 2
4.0 1.3 Mbps
Notes 1. Transfer rate in the SNOOZE mode is 4800 bps only.
2. The maximum operating frequencies of the CPU/peripheral hardware clock (fCLK) are:
HS (high-speed main) mode: 24 MHz (2.7 V ≤ VDD ≤ 5.5 V)
16 MHz (2.4 V ≤ VDD ≤ 5.5 V)
LS (low-speed main) mode: 8 MHz (1.8 V ≤ VDD ≤ 5.5 V)
Caution Select the normal input buffer for the RxDq pin and the normal output mode for the TxDq pin by
using port input mode register g (PIMg) and port output mode register g (POMg).
UART mode connection diagram (during communication at same potential)
RL78
microcontroller
TxDq
RxDq
Rx
Tx
User's device
UART mode bit width (during communication at same potential) (reference)
TxDq
RxDq
Baud rate error tolerance
High-/Low-bit width
1/Transfer rate
Remarks 1. q: UART number (q = 0 to 2), g: PIM, POM number (g = 0, 1)
2. fMCK: Serial array unit operation clock frequency
(Operation clock to be set by the serial clock select register m (SPSm) and the CKSmn bit of serial
mode register mn (SMRmn).
m: Unit number, n: Channel number (mn = 00 to 03, 10, 11))
RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 32 of 106
(2) During communication at same potential (CSI mode) (master mode, SCK00... internal clock output,
corresponding CSI00 only)
(TA = –40 to +85°C, 2.7 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter Symbol Conditions HS (high-speed main)
Mode
LS (low-speed main)
Mode
Unit
MIN. MAX. MIN. MAX.
SCK00 cycle time tKCY1 tKCY1 ≥ 2/fCLK 83.3 250 ns
SCK00 high-/low-
level width
tKH1,
tKL1
4.0 V ≤ VDD ≤ 5.5 V tKCY1/2–7 tKCY1/2–50 ns
2.7 V ≤ VDD ≤ 5.5 V tKCY1/2–10 tKCY1/2–50 ns
SI00 setup time
(to SCK00↑) Note 1
tSIK1 4.0 V ≤ VDD ≤ 5.5 V 23 110 ns
2.7 V ≤ VDD ≤ 5.5 V 33 110 ns
SI00 hold time
(from SCK00↑) Note 2
tKSI1 10 10 ns
Delay time from
SCK00↓ to SO00
output Note 3
tKSO1 C = 20 pF Note 4 10 10 ns
Notes 1. When DAP00 = 0 and CKP00 = 0, or DAP00 = 1 and CKP00 = 1. The SI00 setup time becomes “to
SCK00↓” when DAP00 = 0 and CKP00 = 1, or DAP00 = 1 and CKP00 = 0.
2. When DAP00 = 0 and CKP00 = 0, or DAP00 = 1 and CKP00 = 1. The SI00 hold time becomes “from
SCK00↓” when DAP00 = 0 and CKP00 = 1, or DAP00 = 1 and CKP00 = 0.
3. When DAP00 = 0 and CKP00 = 0, or DAP00 = 1 and CKP00 = 1. The delay time to SO00 output becomes
“from SCK00↑” when DAP00 = 0 and CKP00 = 1, or DAP00 = 1 and CKP00 = 0.
4. C is the load capacitance of the SCK00 and SO00 output lines.
Caution Select the normal input buffer for the SI00 pin and the normal output mode for the SO00 and SCK00
pins by using port input mode register 1 (PIM1) and port output mode register 1 (POM1).
Remarks 1. This specification is valid only when CSI00’s peripheral I/O redirect function is not used.
2. fMCK: Serial array unit operation clock frequency
(Operation clock to be set by the serial clock select register 0 (SPS0) and the CKS00 bit of serial mode
register 00 (SMR00).)
RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 33 of 106
(3) During communication at same potential (CSI mode) (master mode, SCKp... internal clock output)
(TA = –40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter Symbol Conditions HS (high-speed
main) Mode
LS (low-speed
main) Mode
Unit
MIN. MAX. MIN. MAX.
SCKp cycle time tKCY1 tKCY1 ≥ 4/fCLK 2.7 V ≤ VDD ≤ 5.5 V 167 500 ns
2.4 V ≤ VDD ≤ 5.5 V 250 500 ns
1.8 V ≤ VDD ≤ 5.5 V 500 ns
SCKp high-/low-level width tKH1,
tKL1
4.0 V ≤ VDD ≤ 5.5 V tKCY1/2–12 tKCY1/2–50 ns
2.7 V ≤ VDD ≤ 5.5 V tKCY1/2–18 tKCY1/2–50 ns
2.4 V ≤ VDD ≤ 5.5 V tKCY1/2–38 tKCY1/2–50 ns
1.8 V ≤ VDD ≤ 5.5 V tKCY1/2–50 ns
SIp setup time (to SCKp↑)
Note 1
tSIK1 4.0 V ≤ VDD ≤ 5.5 V 44 110 ns
2.7 V ≤ VDD ≤ 5.5 V 44 110 ns
2.4 V ≤ VDD ≤ 5.5 V 75 110 ns
1.8 V ≤ VDD ≤ 5.5 V 110 ns
SIp hold time
(from SCKp↑) Note 2
tKSI1 19 19 ns
Delay time from SCKp↓ to
SOp output Note 3
tKSO1 C = 30 pF Note 4 25 25 ns
Notes 1. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp setup time becomes “to
SCKp↓” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.
2. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp hold time becomes “from
SCKp↓” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.
3. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The delay time to SOp output
becomes “from SCKp↑” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.
4. C is the load capacitance of the SCKp and SOp output lines.
Caution Select the normal input buffer for the SIp pin and the normal output mode for the SOp and SCKp pins
by using port input mode register 1 (PIM1) and port output mode registers 0, 1, 4 (POM0, POM1,
POM4).
Remarks 1. p: CSI number (p = 00, 01, 11, 20), m: Unit number (m = 0, 1), n: Channel number (n = 0, 1, 3: 1, 3” is
only for the R5F102 products)
2. fMCK: Serial array unit operation clock frequency
(Operation clock to be set by the serial clock select register m (SPSm) and the CKSmn bit of serial mode
register mn (SMRmn). m: Unit number (m = 0, 1), n: Channel number (n = 0, 1, 3: “1, 3” is only for the
R5F102 products.))
RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 34 of 106
(4) During communication at same potential (CSI mode) (slave mode, SCKp... external clock input)
(TA = –40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter Symbol Conditions HS (high-speed
main) Mode
LS (low-speed main)
Mode
Unit
MIN. MAX. MIN. MAX.
SCKp cycle time Note 5 tKCY2 4.0 V ≤ VDD ≤ 5.5 V 20 MHz < fMCK 8/fMCK ns
fMCK ≤ 20 MHz 6/fMCK 6/fMCK ns
2.7 V ≤ VDD ≤ 5.5 V 16 MHz < fMCK 8/fMCK ns
fMCK ≤ 16 MHz 6/fMCK 6/fMCK ns
2.4 V ≤ VDD ≤ 5.5 V 6/fMCK
and 500
6/fMCK
and 500
ns
1.8 V ≤ VDD ≤ 5.5 V 6/fMCK
and 750
ns
SCKp high-/low-level
width
tKH2,
tKL2
4.0 V ≤ VDD ≤ 5.5 V tKCY2/2–7 tKCY2/2–7 ns
2.7 V ≤ VDD ≤ 5.5 V tKCY2/2–8 tKCY2/2–8 ns
2.4 V ≤ VDD ≤ 5.5 V tKCY2/2–18 tKCY2/2–18 ns
1.8 V ≤ VDD ≤ 5.5 V tKCY2/2–18 ns
SIp setup time
(to SCKp↑) Note 1
tSIK2 2.7 V ≤ VDD ≤ 5.5 V 1/fMCK + 20 1/fMCK + 30 ns
2.4 V ≤ VDD ≤ 5.5 V 1/fMCK + 30 1/fMCK + 30 ns
1.8 V ≤ VDD ≤ 5.5 V 1/fMCK + 30 ns
SIp hold time
(from SCKp↑) Note 2
tKSI2 1/fMCK + 31 1/fMCK + 31 ns
Delay time from
SCKp↓ to
SOp output Note 3
tKSO2 C = 30 pF Note 4 2.7 V ≤ VDD ≤ 5.5 V 2/fMCK +
44
2/fMCK +
110
ns
2.4 V ≤ VDD ≤ 5.5 V 2/fMCK +
75
2/fMCK +
110
ns
1.8 V ≤ VDD ≤ 5.5 V 2/fMCK +
110
ns
Notes 1. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp setup time becomes “to
SCKp↓” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.
2. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp hold time becomes “from
SCKp↓” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.
3. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The delay time to SOp output
becomes “from SCKp↑” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.
4. C is the load capacitance of the SOp output lines.
5. Transfer rate in the SNOOZE mode: MAX. 1 Mbps.
Caution Select the normal input buffer for the SIp and SCKp pins and the normal output mode for the SOp pin
by using port input mode register 1 (PIM1) and port output mode registers 0, 1, 4 (POM0, POM1,
POM4).
RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 35 of 106
CSI mode connection diagram (during communication at same potential)
RL78
microcontroller
SCKp
SOp
SCK
SI
User's device
SIp SO
CSI mode serial transfer timing (during communication at same potential)
(When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1.)
SIp
SOp
t
KCY1, 2
t
KL1, 2
t
KH1, 2
t
SIK1, 2
t
KSI1, 2
t
KSO1, 2
SCKp
Input data
Output data
CSI mode serial transfer timing (during communication at same potential)
(When DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.)
SIp
SOp
t
KCY1, 2
t
KH1, 2
t
KL1, 2
t
SIK1, 2
t
KSI1, 2
t
KSO1, 2
SCKp
Input data
Output data
(Remarks are listed on the next page.)
RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 36 of 106
Remarks 1. p: CSI number (p = 00, 01, 11, 20), m: Unit number (m = 0, 1), n: Channel number (n = 0, 1, 3: “1, 3” is
only for the R5F102 products.)
2. f
MCK: Serial array unit operation clock frequency
(Operation clock to be set by the serial clock select register m (SPSm) and the CKSmn bit of serial mode
register mn (SMRmn). m: Unit number (m = 0, 1), n: Channel number (n = 0, 1, 3: “1, 3” is only for the
R5F102 products.))
(5) During communication at same potential (simplified I2C mode)
(TA = –40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter Symbol Conditions HS (high-speed main) Mode
LS (low-speed main) Mode
Unit
MIN. MAX.
SCLr clock frequency fSCL 1.8 V ≤ VDD ≤ 5.5 V,
Cb = 100 pF, Rb = 3 kΩ
400 Note 1 kHz
1.8 V ≤ VDD < 2.7 V,
Cb = 100 pF, Rb = 5 kΩ
300 Note 1 kHz
Hold time when SCLr = “L” tLOW 1.8 V ≤ VDD ≤ 5.5 V,
Cb = 100 pF, Rb = 3 kΩ
1150 ns
1.8 V ≤ VDD < 2.7 V,
Cb = 100 pF, Rb = 5 kΩ
1550 ns
Hold time when SCLr = “H” tHIGH 1.8 V ≤ VDD ≤ 5.5 V,
Cb = 100 pF, Rb = 3 kΩ
1150 ns
1.8 V ≤ VDD < 2.7 V,
Cb = 100 pF, Rb = 5 kΩ
1550 ns
Data setup time (reception) tSU:DAT 1.8 V ≤ VDD ≤ 5.5 V,
Cb = 100 pF, Rb = 3 kΩ
1/fMCK + 145 Note 2 ns
1.8 V ≤ VDD < 2.7 V,
Cb = 100 pF, Rb = 5 kΩ
1/fMCK + 230 Note 2 ns
Data hold time (transmission) tHD:DAT 1.8 V ≤ VDD ≤ 5.5 V,
Cb = 100 pF, Rb = 3 kΩ
0 355 ns
1.8 V ≤ VDD < 2.7 V,
Cb = 100 pF, Rb = 5 kΩ
0 405 ns
Notes 1. The value must be equal to or less than fMCK/4.
2. Set tSU:DAT so that it will not exceed the hold time when SCLr = “L” or SCLr = “H”.
Caution Select the N-ch open drain output (VDD tolerance) mode for SDAr by using port output mode register
h (POMh).
(Remarks are listed on the next page.)
RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 37 of 106
Simplified I2C mode connection diagram (during communication at same potential)
RL78
microcontroller
SDAr
SCLr
SDA
SCL
User's device
V
DD
R
b
Simplified I2C mode serial transfer timing (during communication at same potential)
SDAr
t
LOW
t
HIGH
t
HD:DAT
SCLr
t
SU:DAT
1/f
SCL
Remarks 1. R
b [Ω]:Communication line (SDAr) pull-up resistance
C
b [F]: Communication line (SCLr, SDAr) load capacitance
2. r: IIC number (r = 00, 01, 11, 20), h: = POM number (h = 0, 1, 4, 5)
3. f
MCK: Serial array unit operation clock frequency
(Operation clock to be set by the serial clock select register m (SPSm) and the CKSmn bit of serial
mode register mn (SMRmn). m: Unit number (m = 0, 1), n: Channel number (0, 1, 3))
4. Simplified I2C mode is supported only by the R5F102 products.
RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 38 of 106
(6) Communication at different potential (1.8 V, 2.5 V, 3 V) (UART mode)
(TA = –40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter Symbol Conditions HS (high-speed
main) Mode
LS (low-speed
main) Mode
Unit
MIN. MAX. MIN. MAX.
Transfer
rate Note4
Reception 4.0 V VDD ≤ 5.5 V,
2.7 V ≤ Vb ≤ 4.0 V
f
MCK/6
Note1
f
MCK/6
Note1
bps
Theoretical value of the maximum
transfer rate
fMCK = fCLKNote3
4.0 1.3 Mbps
2.7 V ≤ VDD < 4.0 V,
2.3 V ≤ Vb ≤ 2.7 V
f
MCK/6
Note1
f
MCK/6
Note1
bps
Theoretical value of the maximum
transfer rate
fMCK = fCLKNote3
4.0 1.3 Mbps
1.8 V ≤ VDD < 3.3 V,
1.6 V ≤ Vb ≤ 2.0 V
f
MCK/6
Notes1, 2
f
MCK/6
Notes1, 2
bps
Theoretical value of the maximum
transfer rate
fMCK = fCLKNote3
4.0 1.3 Mbps
Transmission
4.0 V ≤ VDD ≤ 5.5 V,
2.7 V ≤ Vb ≤ 4.0 V
Note4 Note4 bps
Theoretical value of the maximum
transfer rate
Cb = 50 pF, Rb = 1.4 kΩ, Vb = 2.7 V
2.8
Note5
2.8
Note5
Mbps
2.7 V ≤ VDD < 4.0 V,
2.3 V ≤ Vb ≤ 2.7 V,
Note6 Note6 bps
Theoretical value of the maximum
transfer rate
Cb = 50 pF, Rb = 2.7 kΩ, Vb = 2.3 V
1.2
Note7
1.2
Note7
Mbps
1.8 V ≤ VDD < 3.3 V,
1.6 V ≤ Vb ≤ 2.0 V
Notes
2, 8
Notes
2, 8
bps
Theoretical value of the maximum
transfer rate
Cb = 50 pF, Rb = 5.5 kΩ, Vb = 1.6 V
0.43
Note9
0.43
Note9
Mbps
Notes 1. Transfer rate in the SNOOZE mode is 4800 bps only.
2. Use it with VDD ≥ Vb.
3. The maximum operating frequencies of the CPU/peripheral hardware clock (fCLK) are:
HS (high-speed main) mode: 24 MHz (2.7 V ≤ VDD ≤ 5.5 V)
16 MHz (2.4 V ≤ VDD ≤ 5.5 V)
LS (low-speed main) mode: 8 MHz (1.8 V ≤ VDD ≤ 5.5 V)
4. The smaller maximum transfer rate derived by using fMCK/6 or the following expression is the valid
maximum transfer rate.
Expression for calculating the transfer rate when 4.0 V ≤ VDD ≤ 5.5 V and 2.7 V ≤ Vb ≤ 4.0 V
Maximum transfer rate =
1
[bps]
{–Cb × Rb × ln (1 – 2.2
Vb)} × 3
1
Transfer rate × 2 – {–Cb × Rb × ln (1 2.2
Vb)}
Baud rate error (theoretical value) =
× 100 [%]
( 1
Transfer rate ) × Number of transferred bits
* This value is the theoretical value of the relative difference between the transmission and reception sides.
RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 39 of 106
5. This value as an example is calculated when the conditions described in the “Conditions” column are met.
Refer to Note 4 above to calculate the maximum transfer rate under conditions of the customer.
6. The smaller maximum transfer rate derived by using fMCK/6 or the following expression is the valid
maximum transfer rate.
Expression for calculating the transfer rate when 2.7 V ≤ VDD < 4.0 V and 2.3 V ≤ Vb ≤ 2.7 V
Maximum transfer rate =
1
[bps]
{–Cb × Rb × ln (1 – 2.0
Vb)} × 3
1
Transfer rate × 2 – {–Cb × Rb × ln (1 – 2.0
Vb)}
Baud rate error (theoretical value) =
× 100 [%]
( 1
Transfer rate ) × Number of transferred bits
* This value is the theoretical value of the relative difference between the transmission and reception sides.
7. This value as an example is calculated when the conditions described in the “Conditions” column are met.
Refer to Note 6 above to calculate the maximum transfer rate under conditions of the customer.
8. The smaller maximum transfer rate derived by using fMCK/6 or the following expression is the valid
maximum transfer rate.
Expression for calculating the transfer rate when 1.8 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V
Maximum transfer rate =
1
[bps]
{–Cb × Rb × ln (1 – 1.5
Vb)} × 3
1
Transfer rate × 2 – {–Cb × Rb × ln (1 1.5
Vb)}
Baud rate error (theoretical value) =
× 100 [%]
( 1
Transfer rate ) × Number of transferred bits
* This value is the theoretical value of the relative difference between the transmission and reception sides.
9. This value as an example is calculated when the conditions described in the “Conditions” column are met.
Refer to Note 8 above to calculate the maximum transfer rate under conditions of the customer.
Caution Select the TTL input buffer for the RxDq pin and the N-ch open drain output (VDD tolerance) mode for
the TxDq pin by using port input mode register g (PIMg) and port output mode register g (POMg).
For VIH and VIL, see the DC characteristics with TTL input buffer selected.
RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 40 of 106
UART mode connection diagram (during communication at different potential)
RL78
microcontroller
TxDq
RxDq
Rx
Tx
User's device
V
b
R
b
UART mode bit width (during communication at different potential) (reference)
TxDq
RxDq
Baud rate error tolerance
High-/Low-bit width
1/Transfer rate
Baud rate error tolerance
High-bit width
Low-bit width
1/Transfer rate
Remarks 1. Rb[Ω]: Communication line (TxDq) pull-up resistance, Cb[F]: Communication line (TxDq) load capacitance,
Vb[V]: Communication line voltage
2. q: UART number (q = 0 to 2), g: PIM and POM number (g = 0, 1)
3. fMCK: Serial array unit operation clock frequency
(Operation clock to be set by the serial clock select register m (SPSm) and the CKSmn bit of serial mode
register mn (SMRmn).
m: Unit number, n: Channel number (mn = 00 to 03, 10, 11))
4. UART0 of the 20- and 24-pin products supports communication at different potential only when the
peripheral I/O redirection function is not used.
RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 41 of 106
(7) Communication at different potential (2.5 V, 3 V) (CSI mode) (master mode, SCK00... internal clock output,
corresponding CSI00 only)
(TA = –40 to +85°C, 2.7 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter Symbol Conditions HS (high-speed
main) Mode
LS (low-speed
main) Mode
Unit
MIN. MAX. MIN. MAX.
SCK00 cycle time tKCY1 tKCY1 ≥ 2/fCLK 4.0 V ≤ VDD ≤ 5.5 V,
2.7 V ≤ Vb ≤ 4.0 V,
Cb = 20 pF, Rb = 1.4 kΩ
200 1150 ns
2.7 V ≤ VDD < 4.0 V,
2.3 V ≤ Vb ≤ 2.7 V,
Cb = 20 pF, Rb = 2.7 kΩ
300 1150 ns
SCK00 high-level width tKH1 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 20 pF, Rb = 1.4 kΩ
tKCY1/2 –
50
tKCY1/2 –
50
ns
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 20 pF, Rb = 2.7 kΩ
tKCY1/2 –
120
tKCY1/2 –
120
ns
SCK00 low-level width tKL1 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 20 pF, Rb = 1.4 kΩ
tKCY1/2 –
7
tKCY1/2 –
50
ns
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 20 pF, Rb = 2.7 kΩ
tKCY1/2 –
10
tKCY1/2 –
50
ns
SI00 setup time
(to SCK00↑) Note 1
tSIK1 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 20 pF, Rb = 1.4 kΩ
58 479 ns
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 20 pF, Rb = 2.7 kΩ
121 479 ns
SI00 hold time
(from SCK00↑) Note 1
tKSI1 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 20 pF, Rb = 1.4 kΩ
10 10 ns
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 20 pF, Rb = 2.7 kΩ
10 10 ns
Delay time from SCK00↓
to SO00 output Note 1
tKSO1 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 20 pF, Rb = 1.4 kΩ
60 60 ns
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 20 pF, Rb = 2.7 kΩ
130 130 ns
SI00 setup time
(to SCK00↓) Note 2
tSIK1 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 20 pF, Rb = 1.4 kΩ
23 110 ns
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 20 pF, Rb = 2.7 kΩ
33 110 ns
SI00 hold time
(from SCK00↓) Note 2
tKSI1 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 20 pF, Rb = 1.4 kΩ
10 10 ns
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 20 pF, Rb = 2.7 kΩ
10 10 ns
Delay time from SCK00↑
to SO00 output Note 2
tKSO1 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 20 pF, Rb = 1.4 kΩ
10 10 ns
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 20 pF, Rb = 2.7 kΩ
10 10 ns
(Notes, Caution, and Remarks are listed on the next page.)
RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 42 of 106
Notes 1. When DAP00 = 0 and CKP00 = 0, or DAP00 = 1 and CKP00 = 1
2. When DAP00 = 0 and CKP00 = 1, or DAP00 = 1 and CKP00 = 0.
Caution Select the TTL input buffer for the SI00 pin and the N-ch open drain output (VDD tolerance) mode for
the SO00 pin and SCK00 pin by using port input mode register 1 (PIM1) and port output mode
register 1 (POM1). For VIH and VIL, see the DC characteristics with TTL input buffer selected.
Remarks 1. R
b [Ω]:Communication line (SCK00, SO00) pull-up resistance, Cb [F]: Communication line (SCK00, SO00)
load capacitance, Vb [V]: Communication line voltage
2. fMCK: Serial array unit operation clock frequency
(Operation clock to be set by the serial clock select register 0 (SPS0) and the CKS00 bit of serial mode
register 00 (SMR00).)
RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 43 of 106
(8) Communication at different potential (1.8 V, 2.5 V, 3 V) (CSI mode) (master mode, SCKp... internal clock
output) (1/3)
(TA = –40 to +85°C, 1.8 V ≤ VDD ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter Symbol Conditions HS (high-speed main)
Mode
LS (low-speed main)
Mode
Unit
MIN. MAX. MIN. MAX.
SCKp cycle time tKCY1 tKCY1 ≥ 4/fCLK 4.0 V ≤ VDD ≤ 5.5 V,
2.7 V ≤ Vb ≤ 4.0 V,
Cb = 30 pF, Rb = 1.4 kΩ
300 1150 ns
2.7 V ≤ VDD < 4.0 V,
2.3 V ≤ Vb ≤ 2.7 V,
Cb = 30 pF, Rb = 2.7 kΩ
500 1150 ns
1.8 V ≤ VDD < 3.3 V,
1.6 V ≤ Vb ≤ 2.0 V Note,
Cb = 30 pF, Rb = 5.5 kΩ
1150 1150 ns
SCKp high-level width tKH1 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 30 pF, Rb = 1.4 kΩ
tKCY1/2 –75 tKCY1/2–75 ns
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 30 pF, Rb = 2.7 kΩ
tKCY1/2 –170 tKCY1/2–170 ns
1.8 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V Note,
Cb = 30 pF, Rb = 5.5 kΩ
tKCY1/2 –458 tKCY1/2–458 ns
SCKp low-level width tKL1 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 30 pF, Rb = 1.4 kΩ
tKCY1/2 –12 tKCY1/2–50 ns
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 30 pF, Rb = 2.7 kΩ
tKCY1/2 –18 tKCY1/2–50 ns
1.8 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V Note,
Cb = 30 pF, Rb = 5.5 kΩ
tKCY1/2 –50 tKCY1/2–50 ns
Note Use it with VDD ≥ Vb.
Cautions 1. Select the TTL input buffer for the SIp pin and the N-ch open drain output (VDD tolerance) mode for
the SOp pin and SCKp pin by using port input mode register 1 (PIM1) and port output mode
register 1 (POM1). For VIH and VIL, see the DC characteristics with TTL input buffer selected.
2. CSI01 and CSI11 cannot communicate at different potential.
Remarks 1. R
b [Ω]: Communication line (SCKp, SOp) pull-up resistance, Cb [F]: Communication line (SCKp, SOp)
load capacitance, Vb [V]: Communication line voltage
2. p: CSI number (p = 00, 20)
RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 44 of 106
(8) Communication at different potential (1.8 V, 2.5 V, 3 V) (CSI mode) (master mode, SCKp... internal clock
output) (2/3)
(TA = –40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter Symbol Conditions HS (high-speed
main) Mode
LS (low-speed
main) Mode
Unit
MIN. MAX. MIN. MAX.
SIp setup time
(to SCKp↑) Note 1
tSIK1 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 30 pF, Rb = 1.4 kΩ
81 479 ns
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 30 pF, Rb = 2.7 kΩ
177 479 ns
1.8 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V Note 2,
Cb = 30 pF, Rb = 5.5 kΩ
479 479 ns
SIp hold time
(from SCKp↑) Note 1
tKSI1 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 30 pF, Rb = 1.4 kΩ
19 19 ns
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 30 pF, Rb = 2.7 kΩ
19 19 ns
1.8 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V Note 2,
Cb = 30 pF, Rb = 5.5 kΩ
19 19 ns
Delay time from
SCKp↓ to
SOp output Note 1
tKSO1 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 30 pF, Rb = 1.4 kΩ
100 100 ns
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 30 pF, Rb = 2.7 kΩ
195 195 ns
1.8 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V Note 2,
Cb = 30 pF, Rb = 5.5 kΩ
483 483 ns
Notes 1. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1.
2. Use it with VDD ≥ Vb.
(Cautions and Remarks are listed on the next page.)
RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 45 of 106
(8) Communication at different potential (1.8 V, 2.5 V, 3 V) (CSI mode) (master mode, SCKp... internal clock
output) (3/3)
(TA = –40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter Symbol Conditions HS (high-speed
main) Mode
LS (low-speed
main) Mode
Unit
MIN. MAX. MIN. MAX.
SIp setup time
(to SCKp↓) Note 1
tSIK1 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 30 pF, Rb = 1.4 kΩ
44 110 ns
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 30 pF, Rb = 2.7 kΩ
44 110 ns
1.8 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V Note 2,
Cb = 30 pF, Rb = 5.5 kΩ
110 110 ns
SIp hold time
(from SCKp↓) Note 1
tKSI1 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 30 pF, Rb = 1.4 kΩ
19 19 ns
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 30 pF, Rb = 2.7 kΩ
19 19 ns
1.8 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V Note 2,
Cb = 30 pF, Rb = 5.5 kΩ
19 19 ns
Delay time from
SCKp↑ to
SOp output Note 1
tKSO1 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 30 pF, Rb = 1.4 kΩ
25 25 ns
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 30 pF, Rb = 2.7 kΩ
25 25 ns
1.8 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V Note 2,
Cb = 30 pF, Rb = 5.5 kΩ
25 25 ns
Notes 1. When DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.
2. Use it with VDD ≥ Vb.
Cautions 1. Select the TTL input buffer for the SIp pin and the N-ch open drain output (VDD tolerance) mode
for the SOp pin and SCKp pin by using port input mode register 1 (PIM1) and port output mode
register 1 (POM1). For VIH and VIL, see the DC characteristics with TTL input buffer selected.
2. CSI01 and CSI11 cannot communicate at different potential.
Remarks 1. R
b [Ω]: Communication line (SCKp, SOp) pull-up resistance, Cb [F]: Communication line (SCKp, SOp)
load capacitance, Vb [V]: Communication line voltage
2. p: CSI number (p = 00, 20), m: Unit number (m = 0, 1), n: Channel number (n = 0)
CSI mode connection diagram (during communication at different potential)
V
b
R
b
SCKp
SOp
SCK
SI
User's device
SIp SO
V
b
R
b
<Master>
RL78
microcontroller
RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 46 of 106
CSI mode serial transfer timing (master mode) (during communication at different potential)
(When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1)
Input data
Output data
SIp
SOp
t
KCY1
t
KL1
t
KH1
t
SIK1
t
KSI1
t
KSO1
SCKp
CSI mode serial transfer timing (master mode) (during communication at different potential)
(When DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.)
t
KCY1
t
KL1
t
KH1
t
SIK1
t
KSI1
t
KSO1
SIp
SOp
SCKp
Input data
Output data
RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 47 of 106
(9) Communication at different potential (1.8 V, 2.5 V, 3 V) (CSI mode) (slave mode, SCKp... external clock input)
(TA = –40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter Symbol Conditions HS (high-speed main)
Mode
LS (low-speed main)
Mode
Unit
MIN. MAX. MIN. MAX.
SCKp cycle time Note 1 tKCY2 4.0 V ≤ VDD ≤ 5.5 V,
2.7 V ≤ Vb ≤ 4.0 V
20 MHz < fMCK ≤ 24 MHz 12/fMCK ns
8 MHz < fMCK ≤ 20 MHz 10/fMCK ns
4 MHz < fMCK ≤ 8 MHz 8/fMCK 16/fMCK ns
fMCK ≤ 4 MHz 6/fMCK 10/fMCK ns
2.7 V ≤ VDD < 4.0 V,
2.3 V ≤ Vb ≤ 2.7 V
20 MHz < fMCK ≤ 24 MHz 16/fMCK ns
16 MHz < fMCK ≤ 20 MHz 14/fMCK ns
8 MHz < fMCK ≤ 16 MHz 12/fMCK ns
4 MHz < fMCK ≤ 8 MHz 8/fMCK 16/fMCK ns
fMCK ≤ 4 MHz
6/fMCK 10/fMCK ns
1.8 V ≤ VDD < 3.3 V,
1.6 V ≤ Vb ≤ 2.0 V
Note 2
20 MHz < fMCK ≤ 24 MHz 36/fMCK ns
16 MHz < fMCK ≤ 20 MHz 32/fMCK ns
8 MHz < fMCK ≤ 16 MHz 26/fMCK ns
4 MHz < fMCK ≤ 8 MHz
16/fMCK 16/fMCK ns
fMCK ≤ 4 MHz
10/fMCK 10/fMCK ns
SCKp high-/low-level
width
tKH2,
tKL2
4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V
t
KCY2/2 – 12 tKCY2/2 – 50 ns
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V
t
KCY2/2 – 18 tKCY2/2 – 50 ns
1.8 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V Note 2
t
KCY2/2 – 50 tKCY2/2 – 50 ns
SIp setup time
(to SCKp↑) Note 3
tSIK2 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ VDD ≤ 4.0 V
1/f
MCK
+
20
1/fMCK
+
30 ns
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V
1/f
MCK
+
20
1/fMCK
+
30 ns
1.8 V ≤ VDD < 3.3 V, 1.6 V ≤ VDD ≤ 2.0 V Note 2
1/f
MCK
+ 30
1/fMCK
+
30 ns
SIp hold time
(from SCKp↑) Note 4
tKSI2
1/f
MCK
+ 31
1/fMCK
+
31 ns
Delay time from
SCKp↓ to SOp
output Note 5
tKSO2 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 30 pF, Rb = 1.4 kΩ
2/fMCK +
120
2/fMCK
+
573
ns
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 30 pF, Rb = 2.7 kΩ
2/fMCK +
214
2/fMCK
+
573
ns
1.8 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V Note 2,
Cb = 30 pF, Rb = 5.5 kΩ
2/fMCK +
573
2/fMCK
+
573
ns
Notes 1. Transfer rate in the SNOOZE mode: MAX. 1 Mbps
2. Use it with VDD ≥ Vb.
3. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp setup time becomes “to
SCKp↓” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.
4. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp hold time becomes “from
SCKp↓” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.
5. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The delay time to SOp output
becomes “from SCKp↑” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.
Cautions 1. Select the TTL input buffer for the SIp and SCKp pins and the N-ch open drain output (VDD
tolerance) mode for the SOp pin by using port input mode register 1 (PIM1) and port output mode
register 1 (POM1). For VIH and VIL, see the DC characteristics with TTL input buffer selected.
2. CSI01 and CSI11 cannot communicate at different potential.
RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 48 of 106
CSI mode connection diagram (during communication at different potential)
RL78
microcontroller
SOp
SCK
SI
User's device
SIp SO
Vb
Rb
SCKp
<Slave>
Remarks 1. Rb [Ω]: Communication line (SOp) pull-up resistance, Cb [F]: Communication line (SOp) load capacitance,
V
b [V]: Communication line voltage
2. p: CSI number (p = 00, 20), m: Unit number (m = 0, 1), n: Channel number (n = 0)
3. f
MCK: Serial array unit operation clock frequency
(Operation clock to be set by the serial clock select register m (SPSm) and the CKSmn bit of serial mode
register mn (SMRmn). m: Unit number, n: Channel number (mn = 00, 10))
CSI mode serial transfer timing (slave mode) (during communication at different potential)
(When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1.)
t
KCY2
t
KL2
t
KH2
t
SIK2
t
KSI2
t
KSO2
SIp
SOp
S
CKp
Input data
Output data
RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 49 of 106
CSI mode serial transfer timing (slave mode) (during communication at different potential)
(When DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.)
t
KCY2
t
KL2
t
KH2
t
SIK2
t
KSI2
t
KSO2
SIp
SOp
S
CKp
Input data
Output data
Remark p: CSI number (p = 00, 20), m: Unit number (m = 0, 1), n: Channel number (n = 0)
RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 50 of 106
(10) Communication at different potential (1.8 V, 2.5 V, 3 V) (simplified I2C mode)
(TA = –40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter Symbol Conditions HS (high-speed
main) Mode
LS (low-speed
main) Mode
Unit
MIN. MAX. MIN. MAX.
SCLr clock frequency fSCL 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 100 pF, Rb = 2.8 kΩ
400Note1 300Note1 kHz
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 100 pF, Rb = 2.7 kΩ
400Note1 300Note1 kHz
1.8 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V,Note2
Cb = 100 pF, Rb = 5.5 kΩ
300Note1 300Note1 kHz
Hold time when SCLr = “L” tLOW 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 100 pF, Rb = 2.8 kΩ
1150 1550 ns
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 100 pF, Rb = 2.7 kΩ
1150 1550 ns
1.8 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V,Note2
Cb = 100 pF, Rb = 5.5 kΩ
1550 1550 ns
Hold time when SCLr = “H” tHIGH 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 100 pF, Rb = 2.8 kΩ
675 610 ns
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 100 pF, Rb = 2.7 kΩ
600 610 ns
1.8 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V,Note2
Cb = 100 pF, Rb = 5.5 kΩ
610 610 ns
Data setup time (reception) tSU:DAT 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 100 pF, Rb = 2.8 kΩ
1/fMCK
+ 190
Note3
1/f
MCK
+ 190
Note3
ns
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 100 pF, Rb = 2.7 kΩ
1/fMCK
+ 190
Note3
1/f
MCK
+ 190
Note3
ns
1.8 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V,Note2
Cb = 100 pF, Rb = 5.5 kΩ
1/fMCK
+ 190
Note3
1/fMCK
+ 190
Note3
ns
Data hold time
(transmission)
tHD:DAT 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 100 pF, Rb = 2.8 kΩ
0 355 0 355 ns
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 100 pF, Rb = 2.7 kΩ
0 355 0 355 ns
1.8 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V,Note2
Cb = 100 pF, Rb = 5.5 kΩ
0 405 0 405 ns
Notes 1. The value must be equal to or less than fMCK/4.
2. Use it with VDD ≥ Vb.
3. Set tSU:DAT so that it will not exceed the hold time when SCLr = “L” or SCLr = “H”.
Cautions 1. Select the TTL input buffer and the N-ch open drain output (VDD tolerance) mode for the SDAr pin
and the N-ch open drain output (VDD tolerance) mode for the SCLr pin by using port input mode
register 1 (PIM1) and port output mode register 1 (POM1). For VIH and VIL, see the DC
characteristics with TTL input buffer selected.
2. IIC01 and IIC11 cannot communicate at different potential.
(Remarks are listed on the next page.)
RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 51 of 106
Simplified I2C mode connection diagram (during communication at different potential)
SDAr
SCLr
SDA
SCL
User's device
V
b
R
b
V
b
R
b
RL78
microcontroller
Simplified I2C mode serial transfer timing (during communication at different potential)
SDAr
t
LOW
t
HIGH
t
HD : DAT
SCLr
t
SU : DAT
1/f
SCL
Remarks 1. R
b [Ω]: Communication line (SDAr, SCLr) pull-up resistance, Cb [F]: Communication line (SDAr, SCLr)
load capacitance, Vb [V]: Communication line voltage
2. r: IIC Number (r = 00, 20)
3. fMCK: Serial array unit operation clock frequency
(Operation clock to be set by the serial clock select register m (SPSm) and the CKSmn bit of serial mode
register mn (SMRmn).
m: Unit number (m = 0,1), n: Channel number (n = 0))
4. Simplified I2C mode is supported only by the R5F102 products.
RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 52 of 106
2.5.2 Serial interface IICA
(TA = –40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter Symbol Conditions HS (high-speed main) mode
LS (low-speed main) mode
Unit
Standard Mode Fast Mode
MIN. MAX. MIN. MAX.
SCLA0 clock frequency fSCL Fast mode: fCLK ≥ 3.5 MHz 0 400 kHz
Normal mode: fCLK ≥ 1 MHz 0 100 kHz
Setup time of restart condition tSU:STA 4.7 0.6 µs
Hold timeNote 1 tHD:STA 4.0 0.6 µs
Hold time when SCLA0 = “L” tLOW 4.7 1.3 µs
Hold time when SCLA0 = “H” tHIGH 4.0 0.6 µs
Data setup time (reception) tSU:DAT 250 100 ns
Data hold time (transmission)Note 2 tHD:DAT 0 3.45 0 0.9 µs
Setup time of stop condition tSU:STO 4.0 0.6 µs
Bus-free time tBUF 4.7 1.3 µs
Notes 1. The first clock pulse is generated after this period when the start/restart condition is detected.
2. The maximum value (MAX.) of tHD:DAT is during normal transfer and a wait state is inserted in the ACK
(acknowledge) timing.
Caution Only in the 30-pin products, the values in the above table are applied even when bit 2 (PIOR2) in the
peripheral I/O redirection register (PIOR) is 1. At this time, the pin characteristics (IOH1, IOL1, VOH1,
VOL1) must satisfy the values in the redirect destination.
Remark The maximum value of Cb (communication line capacitance) and the value of Rb (communication line pull-up
resistor) at that time in each mode are as follows.
Normal mode: Cb = 400 pF, Rb = 2.7 kΩ
Fast mode: Cb = 320 pF, Rb = 1.1 kΩ
IICA serial transfer timing
t
LOW
t
R
t
HIGH
t
F
t
BUF
t
HD:DAT
t
SU:DAT
t
HD:STA
t
SU:STA
t
HD:STA
t
SU:STO
SCLA0
SDAA0
Stop
condition
Start
condition
Restart
condition
Stop
condition
RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 53 of 106
2.6 Analog Characteristics
2.6.1 A/D converter characteristics
Classification of A/D converter characteristics
Input channel Reference Voltage
Reference voltage (+) = AVREFP
Reference voltage (–) = AVREFM
Reference voltage (+) = VDD
Reference voltage (–) = VSS
Reference voltage (+) = VBGR
Reference voltage (–) = AVREFM
ANI0 to ANI3 Refer to 2.6.1 (1). Refer to 2.6.1 (3). Refer to 2.6.1 (4).
ANI16 to ANI22 Refer to 2.6.1 (2).
Internal reference voltage
Temperature sensor
output voltage
Refer to 2.6.1 (1).
(1) When reference voltage (+) = AVREFP/ANI0 (ADREFP1 = 0, ADREFP0 = 1), reference voltage (–) = AVREFM/ANI1
(ADREFM = 1), target pin: ANI2, ANI3, internal reference voltage, and temperature sensor output voltage
(TA =40 to +85°C, 1.8 V AVREFP VDD 5.5 V, VSS = 0 V, Reference voltage (+) = AVREFP, Reference voltage (–) =
AVREFM = 0 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Resolution RES 8 10 bit
Overall errorNote 1 AINL
10-bit resolution
AVREFP = VDD Note 3
1.2 ±3.5 LSB
1.2 ±7.0
Note 4 LSB
Conversion time tCONV 10-bit resolution
Target pin: ANI2, ANI3
3.6 V ≤ VDD ≤ 5.5 V 2.125 39 µs
2.7 V ≤ VDD ≤ 5.5 V 3.1875 39 µs
1.8 V ≤ VDD ≤ 5.5 V 17 39 µs
57 95 µs
10-bit resolution
Target pin: Internal
reference voltage, and
temperature sensor
output voltage
(HS (high-speed main)
mode)
3.6 V ≤ VDD ≤ 5.5 V 2.375 39 µs
2.7 V ≤ VDD ≤ 5.5 V 3.5625 39 µs
2.4 V ≤ VDD ≤ 5.5 V 17 39 µs
Zero-scale errorNotes 1, 2 EZS
10-bit resolution
AVREFP = VDD Note 3
±0.25 %FSR
±0.50 Note 4 %FSR
Full-scale errorNotes 1, 2 EFS
10-bit resolution
AVREFP = VDD Note 3
±0.25 %FSR
±0.50 Note 4 %FSR
Integral linearity errorNote 1 ILE 10-bit resolution
AVREFP = VDD Note 3
±2.5 LSB
±5.0
Note 4 LSB
Differential linearity error
Note 1
DLE 10-bit resolution
AVREFP = VDD Note 3
±1.5 LSB
±2.0
Note 4 LSB
Analog input voltage VAIN ANI2, ANI3 0 AVREFP V
Internal reference voltage
(2.4 V ≤ VDD ≤ 5.5 V, HS (high-speed main) mode)
VBGR Note 5 V
Temperature sensor output voltage
(2.4 V ≤ VDD ≤ 5.5 V, HS (high-speed main) mode)
VTMPS25 Note 5 V
(Notes are listed on the next page.)
RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 54 of 106
Notes 1. Excludes quantization error (±1/2 LSB).
2. This value is indicated as a ratio (%FSR) to the full-scale value.
3. When AVREFP < VDD, the MAX. values are as follows.
Overall error: Add ±1.0 LSB to the MAX. value when AVREFP = VDD.
Zero-scale error/Full-scale error: Add ±0.05%FSR to the MAX. value when AVREFP = VDD.
Integral linearity error/ Differential linearity error: Add ±0.5 LSB to the MAX. value when AVREFP = VDD.
4. Values when the conversion time is set to 57 µs (min.) and 95 µs (max.).
5. Refer to 2.6.2 Temperature sensor/internal reference voltage characteristics.
(2) When reference voltage (+) = AVREFP/ANI0 (ADREFP1 = 0, ADREFP0 = 1), reference voltage (–) = AVREFM/ANI1
(ADREFM = 1), target pin: ANI16 to ANI22
(TA =40 to +85°C, 1.8 V AVREFP VDD 5.5 V, VSS = 0 V, Reference voltage (+) = AVREFP, Reference voltage (–) =
AVREFM = 0 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Resolution RES 8 10 bit
Overall error Note 1 AINL 10-bit resolution
AVREFP = VDD Note 3
1.2 ±5.0 LSB
1.2
±8.5
Note 4 LSB
Conversion time tCONV 10-bit resolution
Target ANI pin: ANI16 to ANI22
3.6 V ≤ VDD ≤ 5.5 V 2.125 39 µs
2.7 V ≤ VDD ≤ 5.5 V 3.1875 39 µs
1.8 V ≤ VDD ≤ 5.5 V 17 39 µs
57 95 µs
Zero-scale error Notes 1, 2 EZS 10-bit resolution
AVREFP = VDD Note 3
±0.35 %FSR
±0.60 Note 4 %FSR
Full-scale error Notes 1, 2 EFS 10-bit resolution
AVREFP = VDD Note 3
±0.35 %FSR
±0.60 Note 4 %FSR
Integral linearity error Note 1 ILE 10-bit resolution
AVREFP = VDD Note 3
±3.5 LSB
±6.0
Note 4 LSB
Differential linearity
error Note 1
DLE 10-bit resolution
AVREFP = VDD Note 3
±2.0 LSB
±2.5
Note 4 LSB
Analog input voltage VAIN ANI16 to ANI22 0 AVREFP
and VDD
V
Notes 1. Excludes quantization error (±1/2 LSB).
2. This value is indicated as a ratio (%FSR) to the full-scale value.
3. When AVREFPVDD, the MAX. values are as follows.
Overall error: Add ±4.0 LSB to the MAX. value when AVREFP = VDD.
Zero-scale error/Full-scale error: Add ±0.20%FSR to the MAX. value when AVREFP = VDD.
Integral linearity error/ Differential linearity error: Add ±2.0 LSB to the MAX. value when AVREFP = VDD.
4. When the conversion time is set to 57 µs (min.) and 95 µs (max.).
RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 55 of 106
(3) When reference voltage (+) = VDD (ADREFP1 = 0, ADREFP0 = 0), reference voltage () = VSS (ADREFM = 0),
target pin: ANI0 to ANI3, ANI16 to ANI22, internal reference voltage, and temperature sensor output voltage
(TA = –40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V, Reference voltage (+) = VDD, Reference voltage (–) = VSS)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Resolution RES 8 10 bit
Overall errorNote 1 AINL 10-bit resolution 1.2 ±7.0 LSB
1.2 ±10.5 Note 3 LSB
Conversion time tCONV 10-bit resolution
Target pin: ANI0 to ANI3,
ANI16 to ANI22
3.6 V ≤ VDD ≤ 5.5 V 2.125 39 µs
2.7 V ≤ VDD ≤ 5.5 V 3.1875 39 µs
1.8 V ≤ VDD ≤ 5.5 V
17 39 µs
57 95 µs
Conversion time tCONV 10-bit resolution
Target pin: internal reference
voltage, and temperature
sensor output voltage (HS
(high-speed main) mode)
3.6 V ≤ VDD ≤ 5.5 V 2.375 39 µs
2.7 V ≤ VDD ≤ 5.5 V 3.5625 39 µs
2.4 V ≤ VDD ≤ 5.5 V 17 39 µs
Zero-scale errorNotes 1, 2 EZS 10-bit resolution ±0.60 %FSR
±0.85
Note 3
%FSR
Full-scale errorNotes 1, 2 EFS 10-bit resolution ±0.60 %FSR
±0.85
Note 3
%FSR
Integral linearity errorNote 1 ILE 10-bit resolution ±4.0 LSB
±6.5 Note 3 LSB
Differential linearity error Note 1 DLE 10-bit resolution ±2.0 LSB
±2.5 Note 3 LSB
Analog input voltage VAIN ANI0 to ANI3, ANI16 to ANI22 0 VDD V
Internal reference voltage
(2.4 V ≤ VDD ≤ 5.5 V, HS (high-speed main) mode)
VBGR Note 4 V
Temperature sensor output voltage
(2.4 V ≤ VDD ≤ 5.5 V, HS (high-speed main) mode)
VTMPS25 Note 4 V
Notes 1. Excludes quantization error (±1/2 LSB).
2. This value is indicated as a ratio (%FSR) to the full-scale value.
3. When the conversion time is set to 57 µs (min.) and 95 µs (max.).
4. Refer to 2.6.2 Temperature sensor/internal reference voltage characteristics.
RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 56 of 106
(4) When reference voltage (+) = Internal reference voltage (ADREFP1 = 1, ADREFP0 = 0), reference voltage (–) =
AVREFM (ADREFM = 1), target pin: ANI0, ANI2, ANI3, and ANI16 to ANI22
(TA = –40 to +85°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V, Reference voltage (+) = VBGR Note 3, Reference voltage (–) = AVREFM
Note 4= 0 V, HS (high-speed main) mode)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Resolution RES 8 bit
Conversion time tCONV 8-bit resolution 17 39 µs
Zero-scale errorNotes 1, 2 EZS 8-bit resolution ±0.60 %FSR
Integral linearity errorNote 1 ILE 8-bit resolution ±2.0 LSB
Differential linearity error Note 1 DLE 8-bit resolution ±1.0 LSB
Analog input voltage VAIN 0 VBGR Note 3 V
Notes 1. Excludes quantization error (±1/2 LSB).
2. This value is indicated as a ratio (%FSR) to the full-scale value.
3. Refer to 2.6.2 Temperature sensor/internal reference voltage characteristics.
4. When reference voltage (–) = VSS, the MAX. values are as follows.
Zero-scale error: Add ±0.35%FSR to the MAX. value when reference voltage (–) = AVREFM.
Integral linearity error: Add ±0.5 LSB to the MAX. value when reference voltage (–) = AVREFM.
Differential linearity error: Add ±0.2 LSB to the MAX. value when reference voltage (–) = AVREFM.
RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 57 of 106
2.6.2 Temperature sensor/internal reference voltage characteristics
(TA = –40 to +85°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V, HS (high-speed main) mode
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Temperature sensor output voltage VTMPS25 Setting ADS register = 80H,
TA = +25°C
1.05 V
Internal reference voltage VBGR Setting ADS register = 81H 1.38 1.45 1.50 V
Temperature coefficient FVTMPS Temperature sensor output
voltage that depends on the
temperature
–3.6 mV/°C
Operation stabilization wait time tAMP 5 µs
2.6.3 POR circuit characteristics
(TA = –40 to +85°C, VSS = 0 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Detection voltage VPOR Power supply rise time 1.47 1.51 1.55 V
VPDR Power supply fall time 1.46 1.50 1.54 V
Minimum pulse width Note TPW 300
µs
Note Minimum time required for a POR reset when VDD exceeds below VPDR. This is also the minimum time required
for a POR reset from when VDD exceeds below 0.7 V to when VDD exceeds VPOR while STOP mode is entered or
the main system clock is stopped through setting bit 0 (HIOSTOP) and bit 7 (MSTOP) in the clock operation
status control register (CSC).
T
PW
VPOR
VPDR or 0.7 V
Supply voltage (VDD)
RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 58 of 106
2.6.4 LVD circuit characteristics
LVD Detection Voltage of Reset Mode and Interrupt Mode
(TA = 40 to +85°C, VPDR ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Detection supply voltage VLVD0 Power supply rise time 3.98 4.06 4.14 V
Power supply fall time 3.90 3.98 4.06 V
VLVD1 Power supply rise time 3.68 3.75 3.82 V
Power supply fall time 3.60 3.67 3.74 V
VLVD2 Power supply rise time 3.07 3.13 3.19 V
Power supply fall time 3.00 3.06 3.12 V
VLVD3 Power supply rise time 2.96 3.02 3.08 V
Power supply fall time 2.90 2.96 3.02 V
VLVD4 Power supply rise time 2.86 2.92 2.97 V
Power supply fall time 2.80 2.86 2.91 V
VLVD5 Power supply rise time 2.76 2.81 2.87 V
Power supply fall time 2.70 2.75 2.81 V
VLVD6 Power supply rise time 2.66 2.71 2.76 V
Power supply fall time 2.60 2.65 2.70 V
VLVD7 Power supply rise time 2.56 2.61 2.66 V
Power supply fall time 2.50 2.55 2.60 V
VLVD8 Power supply rise time 2.45 2.50 2.55 V
Power supply fall time 2.40 2.45 2.50 V
VLVD9 Power supply rise time 2.05 2.09 2.13 V
Power supply fall time 2.00 2.04 2.08 V
VLVD10 Power supply rise time 1.94 1.98 2.02 V
Power supply fall time 1.90 1.94 1.98 V
VLVD11 Power supply rise time 1.84 1.88 1.91 V
Power supply fall time 1.80 1.84 1.87 V
Minimum pulse width tLW 300 µs
Detection delay time 300 µs
RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 59 of 106
LVD detection voltage of interrupt & reset mode
(TA = –40 to +85°C, VPDR ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Interrupt and reset
mode
VLVDB0 VPOC2, VPOC1, VPOC0 = 0, 0, 1, falling reset voltage 1.80 1.84 1.87 V
VLVDB1 LVIS1, LVIS0 = 1, 0
Rising reset release voltage 1.94 1.98 2.02 V
Falling interrupt voltage 1.90 1.94 1.98 V
VLVDB2 LVIS1, LVIS0 = 0, 1
Rising reset release voltage 2.05 2.09 2.13 V
Falling interrupt voltage 2.00 2.04 2.08 V
VLVDB3 LVIS1, LVIS0 = 0, 0
Rising reset release voltage 3.07 3.13 3.19 V
Falling interrupt voltage 3.00 3.06 3.12 V
VLVDC0 VPOC2, VPOC1, VPOC0 = 0, 1, 0, falling reset voltage 2.40 2.45 2.50 V
VLVDC1 LVIS1, LVIS0 = 1, 0
Rising reset release voltage 2.56 2.61 2.66 V
Falling interrupt voltage 2.50 2.55 2.60 V
VLVDC2 LVIS1, LVIS0 = 0, 1
Rising reset release voltage 2.66 2.71 2.76 V
Falling interrupt voltage 2.60 2.65 2.70 V
VLVDC3 LVIS1, LVIS0 = 0, 0
Rising reset release voltage 3.68 3.75 3.82 V
Falling interrupt voltage 3.60 3.67 3.74 V
VLVDD0 VPOC2, VPOC1, VPOC1 = 0, 1, 1, falling reset voltage 2.70 2.75 2.81 V
VLVDD1 LVIS1, LVIS0 = 1, 0
Rising reset release voltage 2.86 2.92 2.97 V
Falling interrupt voltage 2.80 2.86 2.91 V
VLVDD2 LVIS1, LVIS0 = 0, 1
Rising reset release voltage 2.96 3.02 3.08 V
Falling interrupt voltage 2.90 2.96 3.02 V
VLVDD3 LVIS1, LVIS0 = 0, 0
Rising reset release voltage 3.98 4.06 4.14 V
Falling interrupt voltage 3.90 3.98 4.06 V
2.6.5 Power supply voltage rising slope characteristics
(TA = –40 to +85°C, VSS = 0 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Power supply voltage rising slope SVDD 54 V/ms
Caution Make sure to keep the internal reset state by the LVD circuit or an external reset until VDD reaches the
operating voltage range shown in 2.4 AC Characteristics.
RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 60 of 106
2.7 RAM Data Retention Characteristics
(TA = –40 to +85°C, VSS = 0 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Data retention supply voltage VDDDR 1.46 Note 5.5 V
Note This depends on the POR detection voltage. For a falling voltage, data in RAM are retained until the voltage
reaches the level that triggers a POR reset but not once it reaches the level at which a POR reset is generated.
V
DD
STOP instruction execution
Standby release signal
(interrupt request)
STOP mode
RAM data retention
V
DDDR
Operation mod
e
2.8 Flash Memory Programming Characteristics
(TA = –40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
System clock frequency fCLK 1 24 MHz
Code flash memory rewritable times
Notes 1, 2, 3
Cerwr Retained for 20 years
TA = 85°C
1,000 Times
Data flash memory rewritable times
Notes 1, 2, 3
Retained for 1 year
TA = 25°C
1,000,000
Retained for 5 years
TA = 85°C
100,000
Retained for 20 years
TA = 85°C
10,000
Notes 1. 1 erase + 1 write after the erase is regarded as 1 rewrite. The retaining years are until next rewrite after the
rewrite.
2. When using flash memory programmer and Renesas Electronics self programming library
3. These are the characteristics of the flash memory and the results obtained from reliability testing by
Renesas Electronics Corporation.
RL78/G12 2. ELECTRICAL SPECIFICATIONS (TA = –40 to +85°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 61 of 106
2.9 Dedicated Flash Memory Programmer Communication (UART)
(TA = –40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Transfer rate During serial programming 115,200 1,000,000 bps
2.10 Timing of Entry to Flash Memory Programming Modes
(TA = –40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Time to complete the communication for the initial
setting after the external reset is released
tSUINIT POR and LVD reset are
released before external
reset release
100 ms
Time to release the external reset after the TOOL0
pin is set to the low level
tSU POR and LVD reset are
released before external
reset release
10 µs
Time to hold the TOOL0 pin at the low level after
the external reset is released
(excluding the processing time of the firmware to
control the flash memory)
tHD POR and LVD reset are
released before external
reset release
1 ms
RESET
TOOL0
<1> <2> <3>
t
SUINIT
t
HD
+ software
processing
time 1-byte data for
setting mode
t
SU
<4>
<1> The low level is input to the TOOL0 pin.
<2> The external reset is released (POR and LVD reset must be released before the external
reset is released.).
<3> The TOOL0 pin is set to the high level.
<4> Setting of the flash memory programming mode by UART reception and complete the baud
rate setting.
Remark t
SUINIT: Communication for the initial setting must be completed within 100 ms after the external reset is released
during this period.
tSU: Time to release the external reset after the TOOL0 pin is set to the low level
tHD: Time to hold the TOOL0 pin at the low level after the external reset is released (excluding the processing
time of the firmware to control the flash memory)
RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018;
Page 62 of 106
3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to
+105°C)
This chapter describes the following electrical specifications.
Target products G: Industrial applications TA = -40 to +105°C
R5F102xxGxx
Cautions 1. The RL78 microcontrollers have an on-chip debug function, which is provided for development and
evaluation. Do not use the on-chip debug function in products designated for mass production,
because the guaranteed number of rewritable times of the flash memory may be exceeded when this
function is used, and product reliability therefore cannot be guaranteed. Renesas Electronics is not
liable for problems occurring when the on-chip debug function is used.
2. The pins mounted depend on the product. Refer to 2.1 Port Functions to 2.2.1 Functions for each
product in the RL78/G12 User’s Manual.
3. Please contact Renesas Electronics sales office for derating of operation under TA = +85°C to
+105°C. Derating is the systematic reduction of load for the sake of improved reliability.
Remark When the RL78 microcontroller is used in the range of TA = -40 to +85°C, see 2. ELECTRICAL
SPECIFICATIONS (TA = -40 to +85°C).
There are following differences between the products “G: Industrial applications (TA = -40 to +105°C)” and the products “A:
Consumer applications, and D: Industrial applications”.
Parameter Application
A: Consumer applications,
D: Industrial applications
G: Industrial applications
Operating ambient temperature TA = -40 to +85°C TA = -40 to +105°C
Operating mode
Operating voltage range
HS (high-speed main) mode:
2.7 V ≤ VDD ≤ 5.5 V@1 MHz to 24 MHz
2.4 V ≤ VDD ≤ 5.5 V@1 MHz to 16 MHz
LS (low-speed main) mode:
1.8 V ≤ VDD ≤ 5.5 V@1 MHz to 8 MHz
HS (high-speed main) mode only:
2.7 V ≤ VDD ≤ 5.5 V@1 MHz to 24 MHz
2.4 V ≤ VDD ≤ 5.5 V@1 MHz to 16 MHz
High-speed on-chip oscillator
clock accuracy
R5F102 products, 1.8 V ≤ VDD ≤ 5.5 V:
±1.0%@ TA = -20 to +85°C
±1.5%@ TA = -40 to -20°C
R5F103 products, 1.8 V ≤ VDD ≤ 5.5 V:
±5.0%@ TA = -40 to +85°C
R5F102 products, 2.4 V ≤ VDD ≤ 5.5 V:
±2.0%@ TA = +85 to +105°C
±1.0%@ TA = -20 to +85°C
±1.5%@ TA = -40 to -20°C
Serial array unit UART
CSI: fCLK/2 (supporting 12 Mbps), fCLK/4
Simplified I2C communication
UART
CSI: fCLK/4
Simplified I2C communication
Voltage detector Rise detection voltage: 1.88 V to 4.06 V (12 levels)
Fall detection voltage: 1.84 V to 3.98 V (12 levels)
Rise detection voltage: 2.61 V to 4.06 V
(8 levels)
Fall detection voltage: 2.55 V to 3.98 V (8 levels)
Remark The electrical characteristics of the products G: Industrial applications (TA = -40 to +105°C) are different
from those of the products “A: Consumer applications, and D: Industrial applications”. For details, refer to
3.1 to 3.10.
RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018;
Page 63 of 106
3.1 Absolute Maximum Ratings
Absolute Maximum Ratings (TA = 25°C)
Parameter Symbols Conditions Ratings Unit
Supply Voltage VDD –0.5 to + 6.5 V
REGC terminal input
voltageNote1
VIREGC REGC –0.3 to +2.8
and –0.3 to VDD + 0.3
Note 2
V
Input Voltage VI1 Other than P60, P61 –0.3 to VDD + 0.3Note 3 V
VI2 P60, P61 (N-ch open drain) –0.3 to 6.5 V
Output Voltage VO –0.3 to VDD + 0.3Note 3 V
Analog input voltage VAI 20, 24-pin products: ANI0 to ANI3, ANI16 to ANI22
30-pin products: ANI0 to ANI3, ANI16 to ANI19
–0.3 to VDD + 0.3
and –0.3 to
AVREF(+)+0.3 Notes 3, 4
V
Output current, high
IOH1 Per pin Other than P20 to P23 –40 mA
Total of all pins All the terminals other than P20 to P23 –170 mA
20-, 24-pin products: P40 to P42
30-pin products: P00, P01, P40, P120
–70 mA
20-, 24-pin products: P00 to P03Note 5,
P10 to P14
30-pin products: P10 to P17, P30, P31,
P50, P51, P147
–100 mA
IOH2 Per pin P20 to P23 –0.5 mA
Total of all pins –2 mA
Output current, low IOL1 Per pin Other than P20 to P23 40 mA
Total of all pins All the terminals other than P20 to P23 170 mA
20-, 24-pin products: P40 to P42
30-pin products: P00, P01, P40, P120
70 mA
20-, 24-pin products: P00 to P03 Note 5,
P10 to P14, P60, P61
30-pin products: P10 to P17, P30, P31,
P50, P51, P60, P61, P147
100 mA
IOL2 Per pin P20 to P23 1 mA
Total of all pins 5 mA
Operating ambient
temperature
TA –40 to +105 °C
Storage temperature Tstg –65 to +150 °C
Notes 1. 30-pin product only.
2. Connect the REGC pin to VSS via a capacitor (0.47 to 1 µF). This value determines the absolute maximum
rating of the REGC pin. Do not use it with voltage applied.
3. Must be 6.5 V or lower.
4. Do not exceed AVREF(+) + 0.3 V in case of A/D conversion target pin.
5. 24-pin products only.
Caution Product quality may suffer if the absolute maximum rating is exceeded even momentarily for any
parameter. That is, the absolute maximum ratings are rated values at which the product is on the
verge of suffering physical damage, and therefore the product must be used under conditions that
ensure that the absolute maximum ratings are not exceeded.
Remarks 1. Unless specified otherwise, the characteristics of alternate-function pins are the same as those of the port
pins.
2. AV
REF(+) : + side reference voltage of the A/D converter.
3. V
SS : Reference voltage
RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018;
Page 64 of 106
3.2 Oscillator Characteristics
3.2.1 X1 oscillator characteristics
(TA = –40 to +105°C, 2.4 V ≤ VDD ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter Resonator Conditions MIN. TYP. MAX. Unit
X1 clock oscillation
frequency (fX)Note
Ceramic resonator /
crystal oscillator
2.7 V ≤ VDD ≤ 5.5 V 1.0 20.0 MHz
2.4 V ≤ VDD < 2.7 V 1.0 8.0
Note Indicates only permissible oscillator frequency ranges. Refer to AC Characteristics for instruction execution time.
Request evaluation by the manufacturer of the oscillator circuit mounted on a board to check the oscillator
characteristics.
Caution Since the CPU is started by the high-speed on-chip oscillator clock after a reset release, check the X1
clock oscillation stabilization time using the oscillation stabilization time counter status register (OSTC)
by the user. Determine the oscillation stabilization time of the OSTC register and the oscillation
stabilization time select register (OSTS) after sufficiently evaluating the oscillation stabilization time
with the resonator to be used.
Remark When using the X1 oscillator, refer to 5.4 System Clock Oscillator in the RL78/G12 User’s Manual.
3.2.2 On-chip oscillator characteristics
(TA = –40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Oscillators Parameters Conditions MIN. TYP. MAX. Unit
High-speed on-chip oscillator
clock frequency Notes 1, 2
fIH 1 24 MHz
High-speed on-chip oscillator
clock frequency accuracy R5F102 products TA = –20 to +85°C -1.0 +1.0 %
TA = –40 to –20°C -1.5 +1.5 %
TA = +85 to +105°C -2.0 +2.0 %
Low-speed on-chip oscillator
clock frequency
fIL 15 kHz
Low-speed on-chip oscillator
clock frequency accuracy
-15 +15 %
Notes 1. High-speed on-chip oscillator frequency is selected by bits 0 to 3 of option byte (000C2H) and bits 0 to 2 of
HOCODIV register.
2. This only indicates the oscillator characteristics. Refer to AC Characteristics for instruction execution time.
RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018;
Page 65 of 106
3.3 DC Characteristics
3.3.1 Pin characteristics
(TA = –40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V) (1/4)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Output current, highNote 1 IOH1 20-, 24-pin products:
Per pin for P00 to P03Note 4,
P10 to P14, P40 to P42
30-pin products:
Per pin for P00, P01, P10 to P17, P30,
P31, P40, P50, P51, P120, P147
–3.0
Note 2
mA
20-, 24-pin products:
Total of P40 to P42
30-pin products:
Total of P00, P01, P40, P120
(When duty ≤ 70% Note 3)
4.0 V ≤ VDD ≤ 5.5 V
–9.0 mA
2.7 V ≤ VDD < 4.0 V
–6.0 mA
2.4 V ≤ VDD < 2.7 V –4.5 mA
20-, 24-pin products:
Total of P00 to P03Note 4, P10 to P14
30-pin products:
Total of P10 to P17, P30, P31,
P50, P51, P147
(When duty ≤ 70% Note 3)
4.0 V ≤ VDD ≤ 5.5 V
–27.0 mA
2.7 V ≤ VDD < 4.0 V
–18.0 mA
2.4 V ≤ VDD < 2.7 V –10.0 mA
Total of all pins (When duty ≤ 70%Note 3)
–36.0 mA
IOH2 Per pin for P20 to P23 –0.1 mA
Total of all pins –0.4 mA
Notes 1. value of current at which the device operation is guaranteed even if the current flows from the VDD pin to an
output pin.
2. However, do not exceed the total current value.
3. The output current value under conditions where the duty factor ≤ 70%.
If duty factor > 70%: The output current value can be calculated with the following expression (where n
represents the duty factor as a percentage).
Total output current of pins = (IOH × 0.7)/(n × 0.01)
<Example> Where n = 80% and IOH = –10.0 mA
Total output current of pins = (–10.0 × 0.7)/(80 × 0.01) –8.7 mA
However, the current that is allowed to flow into one pin does not vary depending on the duty factor. A
current higher than the absolute maximum rating must not flow into one pin.
4. 24-pin products only.
Caution P10 to P12 and P41 for 20-pin products, P01, P10 to P12, and P41 for 24-pin products, and P00, P10
to P15, P17, and P50 for 30-pin products do not output high level in N-ch open-drain mode.
Remark Unless specified otherwise, the characteristics of alternate-function pins are the same as those of the port
pins.
RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018;
Page 66 of 106
(TA = –40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V) (2/4)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Output current, lowNote 1 IOL1 20-, 24-pin products:
Per pin for P00 to P03Note 4,
P10 to P14, P40 to P42
30-pin products:
Per pin for P00, P01, P10 to P17, P30,
P31, P40, P50, P51, P120, P147
8.5
Note 2
mA
Per pin for P60, P61
15.0
Note 2
mA
20-, 24-pin products:
Total of P40 to P42
30-pin products:
Total of P00, P01, P40, P120
(When duty ≤ 70% Note 3)
4.0 V ≤ VDD ≤ 5.5 V
25.5 mA
2.7 V ≤ VDD < 4.0 V
9.0 mA
2.4 V ≤ VDD < 2.7 V 1.8 mA
20-, 24-pin products:
Total of P00 to P03Note 4,
P10 to P14, P60, P61
30-pin products:
Total of P10 to P17, P30, P31, P50,
P51, P60, P61, P147
(When duty ≤ 70% Note 3)
4.0 V ≤ VDD ≤ 5.5 V 40.0 mA
2.7 V ≤ VDD < 4.0 V 27.0 mA
2.4 V ≤ VDD < 2.7 V 5.4 mA
Total of all pins (When duty ≤ 70%Note 3)
65.5 mA
IOL2 Per pin for P20 to P23 0.4 mA
Total of all pins 1.6 mA
Notes 1. Value of current at which the device operation is guaranteed even if the current flows from an output pin to
the VSS pin.
2. However, do not exceed the total current value.
3. The output current value under conditions where the duty factor ≤ 70%.
If duty factor > 70%: The output current value can be calculated with the following expression (where n
represents the duty factor as a percentage).
Total output current of pins = (IOL × 0.7)/(n × 0.01)
<Example> Where n = 80% and IOL = 10.0 mA
Total output current of pins = (10.0 × 0.7)/(80 × 0.01) 8.7 mA
However, the current that is allowed to flow into one pin does not vary depending on the duty factor. A
current higher than the absolute maximum rating must not flow into one pin.
4. 24-pin products only.
Remark Unless specified otherwise, the characteristics of alternate-function pins are the same as those of the port
pins.
RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018;
Page 67 of 106
(TA = –40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V) (3/4)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Input voltage, high VIH1 Normal input buffer
20-, 24-pin products: P00 to P03Note 2, P10 to P14,
P40 to P42
30-pin products: P00, P01, P10 to P17, P30, P31,
P40, P50, P51, P120, P147
0.8VDD VDD V
VIH2 TTL input buffer
20-, 24-pin products: P10, P11
30-pin products: P01, P10,
P11, P13 to P17
4.0 V ≤ VDD ≤ 5.5 V 2.2 VDD V
3.3 V ≤ VDD < 4.0 V 2.0 VDD V
2.4 V ≤ VDD < 3.3 V 1.5 VDD V
VIH3 Normal input buffer
P20 to P23
0.7VDD VDD V
VIH4 P60, P61 0.7VDD 6.0 V
VIH5 P121, P122, P125Note 1, P137, EXCLK, RESET 0.8VDD VDD V
Input voltage, low VIL1 Normal input buffer
20-, 24-pin products: P00 to P03Note 2, P10 to P14,
P40 to P42
30-pin products: P00, P01, P10 to P17, P30, P31,
P40, P50, P51, P120, P147
0 0.2VDD V
VIL2 TTL input buffer
20-, 24-pin products: P10, P11
30-pin products: P01, P10,
P11, P13 to P17
4.0 V ≤ VDD ≤ 5.5 V 0 0.8 V
3.3 V ≤ VDD < 4.0 V 0 0.5 V
2.4 V ≤ VDD < 3.3 V 0 0.32 V
VIL3 P20 to P23 0 0.3VDD V
VIL4 P60, P61 0 0.3VDD V
VIL5 P121, P122, P125Note 1, P137, EXCLK, RESET 0 0.2VDD V
Output voltage, high VOH1 20-, 24-pin products:
P00 to P03Note 2, P10 to P14,
P40 to P42
30-pin products:
P00, P01, P10 to P17, P30,
P31, P40, P50, P51, P120,
P147
4.0 V ≤ VDD ≤ 5.5 V,
IOH1 = –3.0 mA
VDD–0.7 V
2.7 V ≤ VDD ≤ 5.5 V,
IOH1 = –2.0 mA
VDD–0.6 V
2.4 V ≤ VDD ≤ 5.5 V,
IOH1 = –1.5 mA
VDD–0.5 V
VOH2 P20 to P23 IOH2 = –100 µA VDD–0.5 V
Notes 1. 20, 24-pin products only.
2. 24-pin products only.
Caution The maximum value of VIH of pins P10 to P12 and P41 for 20-pin products, P01, P10 to P12, and P41
for 24-pin products, and P00, P10 to P15, P17, and P50 for 30-pin products is VDD even in N-ch open-
drain mode.
High level is not output in the N-ch open-drain mode.
Remark Unless specified otherwise, the characteristics of alternate-function pins are the same as those of the port
pins.
RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018;
Page 68 of 106
(TA = –40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V) (4/4)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Output voltage, low VOL1 20-, 24-pin products:
P00 to P03Note, P10 to P14,
P40 to P42
30-pin products: P00, P01,
P10 to P17, P30, P31, P40,
P50, P51, P120, P147
4.0 V ≤ VDD ≤ 5.5 V,
IOL1 = 8.5 mA
0.7 V
2.7 V ≤ VDD ≤ 5.5 V,
IOL1 = 3.0 mA
0.6 V
2.7 V ≤ VDD ≤ 5.5 V,
IOL1 = 1.5 mA
0.4 V
2.4 V ≤ VDD ≤ 5.5 V,
IOL1 = 0.6 mA
0.4 V
VOL2 P20 to P23 IOL2 = 400 µA 0.4 V
VOL3 P60, P61 4.0 V ≤ VDD ≤ 5.5 V,
IOL1 = 15.0 mA
2.0 V
4.0 V ≤ VDD ≤ 5.5 V,
IOL1 = 5.0 mA
0.4 V
2.7 V ≤ VDD ≤ 5.5 V,
IOL1 = 3.0 mA
0.4 V
2.4 V ≤ VDD ≤ 5.5 V,
IOL1 = 2.0 mA
0.4 V
Input leakage current,
high
ILIH1 Other than P121,
P122
VI = VDD 1 µA
ILIH2 P121, P122
(X1, X2/EXCLK)
VI = VDD Input port or external
clock input
1 µA
When resonator
connected
10 µA
Input leakage current,
low
ILIL1 Other than P121,
P122
VI = VSS –1 µA
ILIL2 P121, P122
(X1, X2/EXCLK)
VI = VSS Input port or external
clock input
–1 µA
When resonator
connected
–10 µA
On-chip pull-up
resistance
RU 20-, 24-pin products:
P00 to P03Note, P10 to P14,
P40 to P42, P125, RESET
30-pin products: P00, P01,
P10 to P17, P30, P31, P40,
P50, P51, P120, P147
VI = VSS, input port 10 20 100
Note 24-pin products only.
Remark Unless specified otherwise, the characteristics of alternate-function pins are the same as those of the port
pins.
RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018;
Page 69 of 106
3.3.2 Supply current characteristics
(1) 20-, 24-pin products
(TA = 40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V) (1/2)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Supply
currentNote 1
IDD1 Operating
mode
HS (High-speed
main) mode
Note 4
f
IH
= 24 MHz
Note 3
Basic
operation
VDD = 5.0 V 1.5 mA
VDD = 3.0 V 1.5
Normal
operation
VDD = 5.0 V 3.3 5.3 mA
VDD = 3.0 V 3.3 5.3
f
IH
= 16 MHz
Note 3
VDD = 5.0 V 2.5 3.9 mA
VDD = 3.0 V 2.5 3.9
f
MX
= 20 MHz
Note 2
,
V
DD
= 5.0 V
Square wave input 2.8 4.7 mA
Resonator connection 3.0 4.8
f
MX
= 20 MHz
Note 2
,
V
DD
= 3.0 V
Square wave input 2.8 4.7 mA
Resonator connection 3.0 4.8
f
MX
= 10 MHz
Note 2
,
V
DD
= 5.0 V
Square wave input 1.8 2.8 mA
Resonator connection 1.8 2.8
f
MX
= 10 MHz
Note 2
,
V
DD
= 3.0 V
Square wave input 1.8 2.8 mA
Resonator connection 1.8 2.8
Notes 1. Total current flowing into VDD, including the input leakage current flowing when the level of the input pin is
fixed to VDD or VSS. The values below the MAX. column include the peripheral operation current. However,
not including the current flowing into the A/D converter, LVD circuit, I/O port, and on-chip pull-up/pull-down
resistors and the current flowing during data flash rewrite.
2. When high-speed on-chip oscillator clock is stopped.
3. When high-speed system clock is stopped
4. Relationship between operation voltage width, operation frequency of CPU and operation mode is as
follows.
HS (High speed main) mode: VDD = 2.7 V to 5.5 V @1 MHz to 24 MHz
V
DD = 2.4 V to 5.5 V @1 MHz to 16 MHz
Remarks 1. f
MX: High-speed system clock frequency (X1 clock oscillation frequency or external main system clock
frequency)
2. f
IH: high-speed on-chip oscillator clock frequency
3. Temperature condition of the TYP. value is TA = 25°C.
RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018;
Page 70 of 106
(1) 20-, 24-pin products
(TA = 40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V) (2/2)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Supply
currentNote 1
IDD2 Note 2 HALT
mode
HS (High-speed
main) mode
Note 6
fIH = 24 MHzNote 4
VDD = 5.0 V 440 2230 µA
VDD = 3.0 V 440 2230
fIH = 16 MHzNote 4 VDD = 5.0 V 400 1650 µA
VDD = 3.0 V 400 1650
fMX = 20 MHzNote 3,
VDD = 5.0 V
Square wave input 280 1900 µA
Resonator connection 450 2000
fMX = 20 MHzNote 3,
VDD = 3.0 V
Square wave input 280 1900 µA
Resonator connection 450 2000
fMX = 10 MHzNote 3,
VDD = 5.0 V
Square wave input 190 1010 µA
Resonator connection 260 1090
fMX = 10 MHzNote 3,
VDD = 3.0 V
Square wave input 190 1010 µA
Resonator connection 260 1090
IDD3 Note 5 STOP
mode
TA = –40°C 0.19 0.50 µA
TA = +25°C 0.24 0.50
TA = +50°C 0.32 0.80
TA = +70°C 0.48 1.20
TA = +85°C 0.74 2.20
TA = +105°C 1.50 10.20
Notes 1. Total current flowing into VDD, including the input leakage current flowing when the level of the input pin is
fixed to VDD or VSS. The values below the MAX. column include the peripheral operation current. However,
not including the current flowing into the A/D converter, LVD circuit, I/O port, and on-chip pull-up/pull-down
resistors and the current flowing during data flash rewrite.
2. During HALT instruction execution by flash memory.
3. When high-speed on-chip oscillator clock is stopped.
4. When high-speed system clock is stopped.
5. Not including the current flowing into the 12-bit interval timer and watchdog timer.
6. Relationship between operation voltage width, operation frequency of CPU and operation mode is as
follows.
HS (High speed main) mode: VDD = 2.7 V to 5.5 V @1 MHz to 24 MHz
V
DD = 2.4 V to 5.5 V @1 MHz to 16 MHz
Remarks 1. f
MX: High-speed system clock frequency (X1 clock oscillation frequency or external main system clock
frequency)
2. f
IH: high-speed on-chip oscillator clock frequency
3. Except temperature condition of the TYP. value is TA = 25°C, other than STOP mode
RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018;
Page 71 of 106
(2) 30-pin products
(TA = 40 to +105°C, 2.4 V ≤ VDD 5.5 V, VSS = 0 V) (1/2)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Supply
currentNote 1
IDD1 Operating
mode
HS (High-speed
main) mode
Note 4
f
IH
= 24 MHz
Note 3
Basic
operation
VDD = 5.0 V 1.5 mA
VDD = 3.0 V 1.5
Normal
operation
VDD = 5.0 V 3.7 5.8 mA
VDD = 3.0 V 3.7 5.8
f
IH
= 16 MHz
Note 3
VDD = 5.0 V 2.7 4.2 mA
VDD = 3.0 V 2.7 4.2
f
MX
= 20 MHz
Note 2
,
V
DD
= 5.0 V
Square wave input 3.0 4.9 mA
Resonator connection 3.2 5.0
f
MX
= 20 MHz
Note 2
,
V
DD
= 3.0 V
Square wave input 3.0 4.9 mA
Resonator connection 3.2 5.0
f
MX
= 10 MHz
Note 2
,
V
DD
= 5.0 V
Square wave input 1.9 2.9 mA
Resonator connection 1.9 2.9
f
MX
= 10 MHz
Note 2
,
V
DD
= 3.0 V
Square wave input 1.9 2.9 mA
Resonator connection 1.9 2.9
Notes 1. Total current flowing into VDD, including the input leakage current flowing when the level of the input pin is
fixed to VDD or VSS. The values below the MAX. column include the peripheral operation current. However,
not including the current flowing into the A/D converter, LVD circuit, I/O port, and on-chip pull-up/pull-down
resistors and the current flowing during data flash rewrite.
2. When high-speed on-chip oscillator clock is stopped.
3. When high-speed system clock is stopped
4. Relationship between operation voltage width, operation frequency of CPU and operation mode is as
follows.
HS (High speed main) mode: VDD = 2.7 V to 5.5 V @1 MHz to 24 MHz
V
DD = 2.4 V to 5.5 V @1 MHz to 16 MHz
Remarks 1. f
MX: High-speed system clock frequency (X1 clock oscillation frequency or external main system clock
frequency)
2. f
IH: high-speed on-chip oscillator clock frequency
3. Temperature condition of the TYP. value is TA = 25°C.
RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018;
Page 72 of 106
(2) 30-pin products
(TA = 40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V) (2/2)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Supply
current Note 1
IDD2 Note 2 HALT
mode
HS (High-speed
main) mode
Note 6
fIH = 24 MHzNote 4
VDD = 5.0 V 440 2300 µA
VDD = 3.0 V 440 2300
fIH = 16 MHzNote 4 VDD = 5.0 V 400 1700 µA
VDD = 3.0 V 400 1700
fMX = 20 MHzNote 3,
VDD = 5.0 V
Square wave input 280 1900 µA
Resonator connection 450 2000
fMX = 20 MHzNote 3,
VDD = 3.0 V
Square wave input 280 1900 µA
Resonator connection 450 2000
fMX = 10 MHzNote 3,
VDD = 5.0 V
Square wave input 190 1020 µA
Resonator connection 260 1100
fMX = 10 MHzNote 3,
VDD = 3.0 V
Square wave input 190 1020 µA
Resonator connection 260 1100
IDD3 Note 5 STOP
mode
TA = –40°C 0.18 0.50 µA
TA = +25°C 0.23 0.50
TA = +50°C 0.30 1.10
TA = +70°C 0.46 1.90
TA = +85°C 0.75 3.30
TA = +105°C 2.94 15.30
Notes 1. Total current flowing into VDD, including the input leakage current flowing when the level of the input pin is
fixed to VDD or VSS. The values below the MAX. column include the peripheral operation current. However,
not including the current flowing into the A/D converter, LVD circuit, I/O port, and on-chip pull-up/pull-down
resistors and the current flowing during data flash rewrite.
2. During HALT instruction execution by flash memory.
3. When high-speed on-chip oscillator clock is stopped.
4. When high-speed system clock is stopped.
5. Not including the current flowing into the 12-bit interval timer and watchdog timer.
6. Relationship between operation voltage width, operation frequency of CPU and operation mode is as
follows.
HS (High speed main) mode: VDD = 2.7 V to 5.5 V @1 MHz to 24 MHz
V
DD = 2.4 V to 5.5 V @1 MHz to 16 MHz
Remarks 1. f
MX: High-speed system clock frequency (X1 clock oscillation frequency or external main system clock
frequency)
2. f
IH: high-speed on-chip oscillator clock frequency
3. Except STOP mode, temperature condition of the TYP. value is TA = 25°C.
RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018;
Page 73 of 106
(3) Peripheral functions (Common to all products)
(TA = –40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Low-speed onchip
oscillator operating
current
IFIL Note 1 0.20 µA
12-bit interval timer
operating current
ITMKA
Notes 1, 2, 3
0.02 µA
Watchdog timer
operating current
IWDT
Notes 1, 2, 4
fIL = 15 kHz 0.22 µA
A/D converter
operating current
IADC
Notes 1, 5
When conversion
at maximum speed
Normal mode, AVREFP = VDD = 5.0 V 1.30 1.70 mA
Low voltage mode,
AVREFP = VDD = 3.0 V
0.50 0.70 mA
A/D converter
reference voltage
operating current
IADREF
Note 1
75.0 µA
Temperature sensor
operating current
ITMPS
Note 1
75.0 µA
LVD operating current ILVD
Notes 1, 6
0.08 µA
Self-programming
operating current
IFSP
Notes 1, 8
2.00 12.20 mA
BGO operating
current
IBGO
Notes 1, 7
2.00 12.20 mA
SNOOZE operating
current
ISNOZ
Note 1
ADC operation The mode is performed Note 9 0.50 1.10 mA
The A/D conversion operations are
performed, Low voltage mode, AVREFP
= VDD = 3.0 V
1.20 2.04 mA
CSI/UART operation 0.70 1.54 mA
Notes 1. Current flowing to the VDD.
2. When high speed on-chip oscillator and high-speed system clock are stopped.
3. Current flowing only to the 12-bit interval timer (excluding the operating current of the low-speed on-chip
oscillator). The current value of the RL78 microcontrollers is the sum of IDD1, IDD2 or IDD3, and IFIL and ITMKA when
the 12-bit interval timer operates.
4. Current flowing only to the watchdog timer (including the operating current of the low-speed on-chip oscillator).
The current value of the RL78 microcontrollers is the sum of IDD1, IDD2 or IDD3 and IWDT when the watchdog timer
operates.
5. Current flowing only to the A/D converter. The current value of the RL78 microcontrollers is the sum of IDD1 or
IDD2 and IADC when the A/D converter operates in an operation mode or the HALT mode.
6. Current flowing only to the LVD circuit. The current value of the RL78 microcontrollers is the sum of IDD1, IDD2 or
IDD3 and ILVD when the LVD circuit operates.
7. Current flowing only during data flash rewrite.
8. Current flowing only during self programming.
9. For shift time to the SNOOZE mode, see 17.3.3 SNOOZE mode in the RL78/G12 User’s Manual.
Remarks 1. fIL: Low-speed on-chip oscillator clock frequency
2. Temperature condition of the TYP. value is TA = 25°C
RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018;
Page 74 of 106
3.4 AC Characteristics
(TA = –40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Items Symbol Conditions MIN. TYP. MAX. Unit
Instruction cycle (minimum
instruction execution time)
TCY
Main system
clock (f
MAIN
)
operation
HS (High-
speed main)
mode
2.7 V ≤ VDD ≤ 5.5 V 0.04167 1 µs
2.4 V ≤ VDD < 2.7 V 0.0625 1 µs
During self
programming
HS (High-
speed main)
mode
2.7 V ≤ VDD ≤ 5.5 V 0.04167 1 µs
2.4 V ≤ VDD < 2.7 V 0.0625 1 µs
External main system clock
frequency
fEX 2.7 V ≤ VDD ≤ 5.5 V 1.0 20.0 MHz
2.4 V ≤ VDD < 2.7 V 1.0 16.0 MHz
External main system clock
input high-level width, low-
level width
tEXH, tEXL 2.7 V ≤ VDD ≤ 5.5 V 24 ns
2.4 V ≤ VDD < 2.7 V 30 ns
TI00 to TI07 input high-level
width, low-level width
tTIH, tTIL
1/f
MCK
+
10
ns
TO00 to TO07 output
frequency
fTO 4.0 V ≤ VDD ≤ 5.5 V
12 MHz
2.7 V ≤ VDD < 4.0 V
8 MHz
2.4 V ≤ VDD < 2.7 V
4 MHz
PCLBUZ0, or PCLBUZ1
output frequency
fPCL 4.0 V ≤ VDD ≤ 5.5 V
16 MHz
2.7 V ≤ VDD < 4.0 V
8 MHz
2.4 V ≤ VDD < 2.7 V
4 MHz
INTP0 to INTP5 input high-
level width, low-level width
tINTH, tINTL 1 µs
KR0 to KR9 input available
width
tKR 250 ns
RESET low-level width tRSL 10 µs
Remark fMCK: Timer array unit operation clock frequency
(Operation clock to be set by the timer clock select register 0 (TPS0) and the CKS0n bit of timer mode
register 0n (TMR0n). n: Channel number (n = 0 to 7))
RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018;
Page 75 of 106
Minimum Instruction Execution Time during Main System Clock Operation
TCY vs VDD (HS (high-speed main) mode)
When the high-speed on-chip oscillator clock is selected
During self programming
When high-speed system clock is selected
Cycle time T
CY
[µs]
Supply voltage V
DD
[V]
1.0
0.1
0
10
1.0 2.0 3.0 4.0 5.0 6.0
5.52.7
0.01
2.4
0.04167
0.0625
AC Timing Test Point
V
IH
/V
OH
V
IL
/V
OL
Test points V
IH
/V
OH
V
IL
/V
OL
External Main System Clock Timing
EXCLK
1/fEX
tEXL tEXH
RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018;
Page 76 of 106
TI/TO Timing
TI00 to TI07
t
TIL
t
TIH
TO00 to TO07
1/f
TO
Interrupt Request Input Timing
INTP0 to INTP5
t
INTL
t
INTH
Key Interrupt Input Timing
KR0 to KR9
t
KR
RESET Input Timing
RESET
t
RSL
RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018;
Page 77 of 106
3.5 Peripheral Functions Characteristics
AC Timing Test Point
V
IH
/V
OH
V
IL
/V
OL
Test points V
IH
/V
OH
V
IL
/V
OL
3.5.1 Serial array unit
(1) During communication at same potential (UART mode)
(TA = –40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter Symbol Conditions HS (high-speed main) Mode Unit
MIN. MAX.
Transfer rate
Note 1
fMCK/12 bps
Theoretical value of the maximum transfer rate
fCLK = fMCKNote 2
2.0 Mbps
Notes 1. Transfer rate in the SNOOZE mode is 4800 bps only.
2. The maximum operating frequencies of the CPU/peripheral hardware clock (fCLK) are:
HS (high-speed main) mode: 24 MHz (2.7 V ≤ VDD ≤ 5.5 V)
16 MHz (2.4 V ≤ VDD ≤ 5.5 V)
Caution Select the normal input buffer for the RxDq pin and the normal output mode for the TxDq pin by
using port input mode register g (PIMg) and port output mode register g (POMg).
UART mode connection diagram (during communication at same potential)
RL78
microcontroller
TxDq
RxDq
Rx
Tx
User's device
UART mode bit width (during communication at same potential) (reference)
TxDq
RxDq
Baud rate error tolerance
High-/Low-bit width
1/Transfer rate
Remarks 1. q: UART number (q = 0 to 2), g: PIM, POM number (g = 0, 1)
2. f
MCK: Serial array unit operation clock frequency
(Operation clock to be set by the serial clock select register m (SPSm) and the CKSmn bit of serial
mode register mn (SMRmn).
m: Unit number, n: Channel number (mn = 00 to 03, 10, 11))
RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018;
Page 78 of 106
(2) During communication at same potential (CSI mode) (master mode, SCKp... internal clock output)
(TA = –40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter Symbol Conditions HS (high-speed main) Mode Unit
MIN. MAX.
SCKp cycle time tKCY1 tKCY1 ≥ 4/fCLK 2.7 V ≤ VDD ≤ 5.5 V 334 ns
2.4 V ≤ VDD ≤ 5.5 V 500 ns
SCKp high-/low-level width tKH1,
tKL1
4.0 V ≤ VDD ≤ 5.5 V tKCY1/2–24 ns
2.7 V ≤ VDD ≤ 5.5 V tKCY1/2–36 ns
2.4 V ≤ VDD ≤ 5.5 V tKCY1/2–76 ns
SIp setup time (to SCKp↑) Note 1 tSIK1 4.0 V ≤ VDD ≤ 5.5 V 66 ns
2.7 V ≤ VDD ≤ 5.5 V 66 ns
2.4 V ≤ VDD ≤ 5.5 V 113 ns
SIp hold time (from SCKp↑) Note 2 tKSI1 38 ns
Delay time from SCKp↓ to
SOp output Note 3
tKSO1 C = 30 pF Note 4 50 ns
Notes 1. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp setup time becomes “to
SCKp↓” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.
2. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp hold time becomes “from
SCKp↓” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.
3. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The delay time to SOp output
becomes “from SCKp↑” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.
4. C is the load capacitance of the SCKp and SOp output lines.
Caution Select the normal input buffer for the SIp pin and the normal output mode for the SOp and SCKp pins
by using port input mode register 1 (PIM1) and port output mode registers 0, 1, 4 (POM0, POM1,
POM4).
Remarks 1. p: CSI number (p = 00, 01, 11, 20), m: Unit number (m = 0, 1), n: Channel number (n = 0, 1, 3)
2. fMCK: Serial array unit operation clock frequency
(Operation clock to be set by the serial clock select register m (SPSm) and the CKSmn bit of serial mode
register mn (SMRmn). m: Unit number (m = 0, 1), n: Channel number (n = 0, 1, 3))
RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018;
Page 79 of 106
(3) During communication at same potential (CSI mode) (slave mode, SCKp... external clock input)
(TA = –40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter Symbol Conditions HS (high-speed main) Mode Unit
MIN. MAX.
SCKp cycle time Note 5 tKCY2 4.0 V ≤ VDD ≤ 5.5 V 20 MHz < fMCK 16/fMCK ns
fMCK ≤ 20 MHz 12/fMCK ns
2.7 V ≤ VDD ≤ 5.5 V 16 MHz < fMCK 16/fMCK ns
fMCK ≤ 16 MHz 12/fMCK ns
2.4 V ≤ VDD ≤ 5.5 V 12/fMCK
and 1000
ns
SCKp high-/low-level width tKH2,
tKL2
4.0 V ≤ VDD ≤ 5.5 V tKCY2/2–14 ns
2.7 V ≤ VDD ≤ 5.5 V tKCY2/2–16 ns
2.4 V ≤ VDD ≤ 5.5 V tKCY2/2–36 ns
SIp setup time (to SCKp↑)
Note 1
tSIK2 2.7 V ≤ VDD ≤ 5.5 V 1/fMCK + 40 ns
2.4 V ≤ VDD ≤ 5.5 V 1/fMCK + 60 ns
SIp hold time
(from SCKp↑) Note 2
tKSI2 1/fMCK + 62 ns
Delay time from SCKp↓ to
SOp output Note 3
tKSO2 C = 30 pF Note 4 2.7 V ≤ VDD ≤ 5.5 V 2/fMCK + 66 ns
2.4 V ≤ VDD ≤ 5.5 V 2/fMCK + 113 ns
Notes 1. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp setup time becomes “to
SCKp↓” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.
2. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp hold time becomes “from
SCKp↓” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.
3. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The delay time to SOp output
becomes “from SCKp↑” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.
4. C is the load capacitance of the SOp output lines.
5. Transfer rate in the SNOOZE mode: MAX. 1 Mbps.
Caution Select the normal input buffer for the SIp and SCKp pins and the normal output mode for the SOp pin
by using port input mode register 1 (PIM1) and port output mode registers 0, 1, 4 (POM0, POM1,
POM4).
CSI mode connection diagram (during communication at same potential)
RL78
microcontroller
SCKp
SOp
SCK
SI
User's device
SIp SO
RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018;
Page 80 of 106
CSI mode serial transfer timing (during communication at same potential)
(When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1.)
SIp
SOp
t
KCY1, 2
t
KL1, 2
t
KH1, 2
t
SIK1, 2
t
KSI1, 2
t
KSO1, 2
SCKp
Input data
Output data
CSI mode serial transfer timing (during communication at same potential)
(When DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.)
SIp
SOp
t
KCY1, 2
t
KH1, 2
t
KL1, 2
t
SIK1, 2
t
KSI1, 2
t
KSO1, 2
SCKp
Input data
Output data
Remarks 1. p: CSI number (p = 00, 01, 11, 20), m: Unit number (m = 0, 1), n: Channel number (n = 0, 1, 3)
2. f
MCK: Serial array unit operation clock frequency
(Operation clock to be set by the serial clock select register m (SPSm) and the CKSmn bit of serial
mode register mn (SMRmn). m: Unit number (m = 0,1), n: Channel number (n = 0, 1, 3))
RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018;
Page 81 of 106
(4) During communication at same potential (simplified I2C mode)
(TA = –40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter Symbol Conditions HS (high-speed main) Mode Unit
MIN. MAX.
SCLr clock frequency fSCL Cb = 100 pF, Rb = 3 kΩ 100 Note 1 kHz
Hold time when SCLr = “L” tLOW Cb = 100 pF, Rb = 3 kΩ 4600 ns
Hold time when SCLr = “H” tHIGH Cb = 100 pF, Rb = 3 kΩ 4600 ns
Data setup time (reception) tSU:DAT Cb = 100 pF, Rb = 3 kΩ 1/fMCK + 580 Note 2 ns
Data hold time (transmission) tHD:DAT Cb = 100 pF, Rb = 3 kΩ 0 1420 ns
Notes 1. The value must be equal to or less than fMCK/4.
2. Set tSU:DAT so that it will not exceed the hold time when SCLr = “L” or SCLr = “H”.
Caution Select the N-ch open drain output (VDD tolerance) mode for SDAr by using port output mode register
h (POMh).
Simplified I2C mode connection diagram (during communication at same potential)
RL78
microcontroller
SDAr
SCLr
SDA
SCL
User's device
V
DD
R
b
Simplified I2C mode serial transfer timing (during communication at same potential)
SDAr
t
LOW
t
HIGH
t
HD:DAT
SCLr
t
SU:DAT
1/f
SCL
Remarks 1. Rb [Ω]:Communication line (SDAr) pull-up resistance
C
b [F]: Communication line (SCLr, SDAr) load capacitance
2. r: IIC number (r = 00, 01, 11, 20), h: = POM number (h = 0, 1, 4, 5)
3. f
MCK: Serial array unit operation clock frequency
(Operation clock to be set by the serial clock select register m (SPSm) and the CKSmn bit of serial mode
register mn (SMRmn).
m: Unit number (m = 0, 1), n: Channel number (0, 1, 3))
RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018;
Page 82 of 106
(5) Communication at different potential (1.8 V, 2.5 V, 3 V) (UART mode)
(TA = –40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter Symbol Conditions HS (high-speed main)
Mode
Unit
MIN. MAX.
Transfer
rate Note4
Reception 4.0 V VDD ≤ 5.5 V,
2.7 V ≤ Vb ≤ 4.0 V
fMCK/12
Note 1
bps
Theoretical value of the maximum
transfer rate
fMCK = fCLKNote 2
2.0 Mbps
2.7 V ≤ VDD < 4.0 V,
2.3 V ≤ Vb ≤ 2.7 V
f
MCK/12
Note 1
bps
Theoretical value of the maximum
transfer rate
fMCK = fCLKNote 2
2.0 Mbps
2.4 V ≤ VDD < 3.3 V,
1.6 V ≤ Vb ≤ 2.0 V
fMCK/12
Note 1
bps
Theoretical value of the maximum
transfer rate
fMCK = fCLKNote 2
2.0 Mbps
Transmission
4.0 V ≤ VDD ≤ 5.5 V,
2.7 V ≤ Vb ≤ 4.0 V
Note 3 bps
Theoretical value of the maximum
transfer rate
Cb = 50 pF, Rb = 1.4 kΩ, Vb = 2.7 V
2.0
Note 4
Mbps
2.7 V ≤ VDD < 4.0 V,
2.3 V ≤ Vb ≤ 2.7 V,
Note 5 bps
Theoretical value of the maximum
transfer rate
Cb = 50 pF, Rb = 2.7 kΩ, Vb = 2.3 V
1.2
Note 6
Mbps
2.4 V ≤ VDD < 3.3 V,
1.6 V ≤ Vb ≤ 2.0 V
Notes
2, 7
bps
Theoretical value of the maximum
transfer rate
Cb = 50 pF, Rb = 5.5 kΩ, Vb = 1.6 V
0.43
Note 8
Mbps
Notes 1. Transfer rate in the SNOOZE mode is 4800 bps only.
2. The maximum operating frequencies of the CPU/peripheral hardware clock (fCLK) are:
HS (high-speed main) mode: 24 MHz (2.7 V ≤ VDD ≤ 5.5 V)
16 MHz (2.4 V ≤ VDD ≤ 5.5 V)
3. The smaller maximum transfer rate derived by using fMCK/12 or the following expression is the valid
maximum transfer rate.
Expression for calculating the transfer rate when 4.0 V ≤ VDD ≤ 5.5 V and 2.7 V ≤ Vb ≤ 4.0 V
Maximum transfer rate =
1
[bps]
{–Cb × Rb × ln (1 – 2.2
Vb)} × 3
RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018;
Page 83 of 106
1
Transfer rate × 2 – {–Cb × Rb × ln (1 2.2
Vb)}
Baud rate error (theoretical value) =
× 100 [%]
( 1
Transfer rate ) × Number of transferred bits
* This value is the theoretical value of the relative difference between the transmission and reception sides.
4. This value as an example is calculated when the conditions described in the “Conditions” column are met.
Refer to Note 3 above to calculate the maximum transfer rate under conditions of the customer.
5. The smaller maximum transfer rate derived by using fMCK/12 or the following expression is the valid
maximum transfer rate.
Expression for calculating the transfer rate when 2.7 V ≤ VDD < 4.0 V and 2.3 V ≤ Vb ≤ 2.7 V
Maximum transfer rate =
1
[bps]
{–Cb × Rb × ln (1 – 2.0
Vb)} × 3
1
Transfer rate × 2 – {–Cb × Rb × ln (1 – 2.0
Vb)}
Baud rate error (theoretical value) =
× 100 [%]
( 1
Transfer rate ) × Number of transferred bits
* This value is the theoretical value of the relative difference between the transmission and reception sides.
6. This value as an example is calculated when the conditions described in the “Conditions” column are met.
Refer to Note 5 above to calculate the maximum transfer rate under conditions of the customer.
7. The smaller maximum transfer rate derived by using fMCK/12 or the following expression is the valid
maximum transfer rate.
Expression for calculating the transfer rate when 2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V
Maximum transfer rate =
1
[bps]
{–Cb × Rb × ln (1 – 1.5
Vb)} × 3
1
Transfer rate × 2 – {–Cb × Rb × ln (1 1.5
Vb)}
Baud rate error (theoretical value) =
× 100 [%]
( 1
Transfer rate ) × Number of transferred bits
* This value is the theoretical value of the relative difference between the transmission and reception sides.
8. This value as an example is calculated when the conditions described in the “Conditions” column are met.
Refer to Note 7 above to calculate the maximum transfer rate under conditions of the customer.
Caution Select the TTL input buffer for the RxDq pin and the N-ch open drain output (VDD tolerance) mode for
the TxDq pin by using port input mode register g (PIMg) and port output mode register g (POMg).
For VIH and VIL, see the DC characteristics with TTL input buffer selected.
RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018;
Page 84 of 106
UART mode connection diagram (during communication at different potential)
RL78
microcontroller
TxDq
RxDq
Rx
Tx
User's device
V
b
R
b
UART mode bit width (during communication at different potential) (reference)
TxDq
RxDq
Baud rate error tolerance
High-/Low-bit width
1/Transfer rate
Baud rate error tolerance
High-bit width
Low-bit width
1/Transfer rate
Remarks 1. Rb[Ω]: Communication line (TxDq) pull-up resistance, Cb[F]: Communication line (TxDq) load capacitance,
Vb[V]: Communication line voltage
2. q: UART number (q = 0 to 2), g: PIM and POM number (g = 0, 1)
3. fMCK: Serial array unit operation clock frequency
(Operation clock to be set by the serial clock select register m (SPSm) and the CKSmn bit of serial mode
register mn (SMRmn).
m: Unit number, n: Channel number (mn = 00 to 03, 10, 11))
4. UART0 of the 20- and 24-pin products supports communication at different potential only when the
peripheral I/O redirection function is not used.
RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018;
Page 85 of 106
(6) Communication at different potential (1.8 V, 2.5 V, 3 V) (CSI mode) (master mode, SCKp... internal clock
output) (1/3)
(TA = –40 to +105°C, 2.4 V ≤ VDD ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter Symbol Conditions HS (high-speed main) Mode Unit
MIN. MAX.
SCKp cycle time tKCY1 tKCY1 ≥ 4/fCLK 4.0 V ≤ VDD ≤ 5.5 V,
2.7 V ≤ Vb ≤ 4.0 V,
Cb = 30 pF, Rb = 1.4 kΩ
600 ns
2.7 V ≤ VDD < 4.0 V,
2.3 V ≤ Vb ≤ 2.7 V,
Cb = 30 pF, Rb = 2.7 kΩ
1000 ns
2.4 V ≤ VDD < 3.3 V,
1.6 V ≤ Vb ≤ 2.0 V,
Cb = 30 pF, Rb = 5.5 kΩ
2300 ns
SCKp high-level width tKH1 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 30 pF, Rb = 1.4 kΩ
tKCY1/2 –150 ns
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 30 pF, Rb = 2.7 kΩ
tKCY1/2 –340 ns
2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V,
Cb = 30 pF, Rb = 5.5 kΩ
tKCY1/2 –916 ns
SCKp low-level width tKL1 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 30 pF, Rb = 1.4 kΩ
tKCY1/2 –24 ns
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 30 pF, Rb = 2.7 kΩ
tKCY1/2 –36 ns
2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V,
Cb = 30 pF, Rb = 5.5 kΩ
tKCY1/2 –100 ns
Cautions 1. Select the TTL input buffer for the SIp pin and the N-ch open drain output (VDD tolerance) mode
for the SOp pin and SCKp pin by using port input mode register 1 (PIM1) and port output mode
register 1 (POM1). For VIH and VIL, see the DC characteristics with TTL input buffer selected.
2. CSI01 and CSI11 cannot communicate at different potential.
Remarks 1. R
b [Ω]: Communication line (SCKp, SOp) pull-up resistance, Cb [F]: Communication line (SCKp, SOp)
load capacitance, Vb [V]: Communication line voltage
2. p: CSI number (p = 00, 20)
RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018;
Page 86 of 106
(6) Communication at different potential (1.8 V, 2.5 V, 3 V) (CSI mode) (master mode, SCKp... internal clock
output) (2/3)
(TA = –40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter Symbol Conditions HS (high-speed main) Mode Unit
MIN. MAX.
SIp setup time (to SCKp↑)
Note
tSIK1 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 30 pF, Rb = 1.4 kΩ
162 ns
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 30 pF, Rb = 2.7 kΩ
354 ns
2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V,
Cb = 30 pF, Rb = 5.5 kΩ
958 ns
SIp hold time
(from SCKp↑) Note
tKSI1 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 30 pF, Rb = 1.4 kΩ
38 ns
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 30 pF, Rb = 2.7 kΩ
38 ns
2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V,
Cb = 30 pF, Rb = 5.5 kΩ
38 ns
Delay time from SCKp↓ to
SOp output Note
tKSO1 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 30 pF, Rb = 1.4 kΩ
200 ns
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 30 pF, Rb = 2.7 kΩ
390 ns
2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V,
Cb = 30 pF, Rb = 5.5 kΩ
966 ns
Note When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1.
(Cautions and Remarks are listed on the next page.)
RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018;
Page 87 of 106
(6) Communication at different potential (1.8 V, 2.5 V, 3 V) (CSI mode) (master mode, SCKp... internal clock
output) (3/3)
(TA = –40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter Symbol Conditions HS (high-speed main) Mode Unit
MIN. MAX.
SIp setup time (to SCKp↓)
Note
tSIK1 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 30 pF, Rb = 1.4 kΩ
88 ns
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 30 pF, Rb = 2.7 kΩ
88 ns
2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V,
Cb = 30 pF, Rb = 5.5 kΩ
220 ns
SIp hold time
(from SCKp↓) Note
tKSI1 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 30 pF, Rb = 1.4 kΩ
38 ns
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 30 pF, Rb = 2.7 kΩ
38 ns
2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V,
Cb = 30 pF, Rb = 5.5 kΩ
38 ns
Delay time from SCKp↑ to
SOp output Note
tKSO1 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 30 pF, Rb = 1.4 kΩ
50 ns
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 30 pF, Rb = 2.7 kΩ
50 ns
2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V,
Cb = 30 pF, Rb = 5.5 kΩ
50 ns
Note When DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.
Cautions 1. Select the TTL input buffer for the SIp pin and the N-ch open drain output (VDD tolerance) mode
for the SOp pin and SCKp pin by using port input mode register 1 (PIM1) and port output mode
register 1 (POM1). For VIH and VIL, see the DC characteristics with TTL input buffer selected.
2. CSI01 and CSI11 cannot communicate at different potential.
Remarks 1. R
b [Ω]: Communication line (SCKp, SOp) pull-up resistance, Cb [F]: Communication line (SCKp, SOp)
load capacitance, Vb [V]: Communication line voltage
2. p: CSI number (p = 00, 20), m: Unit number (m = 0, 1), n: Channel number (n = 0)
CSI mode connection diagram (during communication at different potential)
V
b
R
b
SCKp
SOp
SCK
SI
User's device
SIp SO
V
b
R
b
<Master>
RL78
microcontroller
RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018;
Page 88 of 106
CSI mode serial transfer timing (master mode) (during communication at different potential)
(When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1)
t
KCY1
t
KL1
t
KH1
t
SIK1
t
KSI1
t
KSO1
SIp
SOp
SCKp
Input data
Output data
CSI mode serial transfer timing (master mode) (during communication at different potential)
(When DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.)
t
KCY1
t
KL1
t
KH1
t
SIK1
t
KSI1
t
KSO1
SIp
SOp
SCKp
Input data
Output data
Remark p: CSI number (p = 00, 20), m: Unit number (m = 0, 1), n: Channel number (n = 0)
RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018;
Page 89 of 106
(7) Communication at different potential (1.8 V, 2.5 V, 3 V) (CSI mode) (slave mode, SCKp... external clock input)
(TA = –40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter Symbol Conditions HS (high-speed main)
Mode
Unit
MIN. MAX.
SCKp cycle time Note 1 tKCY2 4.0 V ≤ VDD ≤ 5.5 V,
2.7 V ≤ Vb ≤ 4.0 V
20 MHz < fMCK ≤ 24 MHz 24/fMCK ns
8 MHz < fMCK ≤ 20 MHz 20/fMCK ns
4 MHz < fMCK ≤ 8 MHz 16/fMCK ns
fMCK ≤ 4 MHz 12/fMCK ns
2.7 V ≤ VDD < 4.0 V,
2.3 V ≤ Vb ≤ 2.7 V
20 MHz < fMCK ≤ 24 MHz 32/fMCK ns
16 MHz < fMCK ≤ 20 MHz 28/fMCK ns
8 MHz < fMCK ≤ 16 MHz 24/fMCK ns
4 MHz < fMCK ≤ 8 MHz 16/fMCK ns
fMCK ≤ 4 MHz
12/fMCK ns
2.4 V ≤ VDD < 3.3 V,
1.6 V ≤ Vb ≤ 2.0 V
20 MHz < fMCK ≤ 24 MHz 72/fMCK ns
16 MHz < fMCK ≤ 20 MHz 64/fMCK ns
8 MHz < fMCK ≤ 16 MHz 52/fMCK ns
4 MHz < fMCK ≤ 8 MHz
32/fMCK ns
fMCK ≤ 4 MHz
20/fMCK ns
SCKp high-/low-level
width
tKH2,
tKL2
4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V
t
KCY2/2 – 24 ns
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V
t
KCY2/2 – 36 ns
2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V
t
KCY2/2 – 100 ns
SIp setup time
(to SCKp↑) Note 2
tSIK2 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ VDD ≤ 4.0 V
1/f
MCK
+
40
ns
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V
1/f
MCK
+
40
ns
2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ VDD ≤ 2.0 V
1/f
MCK
+ 60
ns
SIp hold time
(from SCKp↑) Note 3
tKSI2
1/f
MCK
+ 62
ns
Delay time from SCKp↓ to
SOp output Note 4
tKSO2 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 30 pF, Rb = 1.4 kΩ
2/fMCK +
240
ns
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 30 pF, Rb = 2.7 kΩ
2/fMCK +
428
ns
2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V,
Cb = 30 pF, Rb = 5.5 kΩ
2/fMCK +
1146
ns
Notes 1. Transfer rate in the SNOOZE mode: MAX. 1 Mbps
2. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp setup time becomes “to
SCKp↓” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.
3. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The SIp hold time becomes “from
SCKp↓” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.
4. When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1. The delay time to SOp output
becomes “from SCKp↑” when DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.
Cautions 1. Select the TTL input buffer for the SIp and SCKp pins and the N-ch open drain output (VDD
tolerance) mode for the SOp pin by using port input mode register 1 (PIM1) and port output
mode register 1 (POM1). For VIH and VIL, see the DC characteristics with TTL input buffer
selected.
2. CSI01 and CSI11 cannot communicate at different potential.
RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018;
Page 90 of 106
CSI mode connection diagram (during communication at different potential)
RL78
microcontroller
SOp
SCK
SI
User's device
SIp SO
Vb
Rb
SCKp
<Slave>
CSI mode serial transfer timing (slave mode) (during communication at different potential)
(When DAPmn = 0 and CKPmn = 0, or DAPmn = 1 and CKPmn = 1.)
t
KCY2
t
KL2
t
KH2
t
SIK2
t
KSI2
t
KSO2
SIp
SOp
S
CKp
Input data
Output data
Remarks 1. R
b [Ω]: Communication line (SOp) pull-up resistance, Cb [F]: Communication line (SOp) load capacitance,
V
b [V]: Communication line voltage
2. p: CSI number (p = 00, 20), m: Unit number (m = 0, 1), n: Channel number (n = 0)
3. f
MCK: Serial array unit operation clock frequency
(Operation clock to be set by the serial clock select register m (SPSm) and the CKSmn bit of serial mode
register mn (SMRmn))
RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018;
Page 91 of 106
CSI mode serial transfer timing (slave mode) (during communication at different potential)
(When DAPmn = 0 and CKPmn = 1, or DAPmn = 1 and CKPmn = 0.)
t
KCY2
t
KL2
t
KH2
t
SIK2
t
KSI2
t
KSO2
SIp
SOp
S
CKp
Input data
Output data
Remark p: CSI number (p = 00, 20), m: Unit number (m = 0, 1), n: Channel number (n = 0)
RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018;
Page 92 of 106
(8) Communication at different potential (1.8 V, 2.5 V, 3 V) (simplified I2C mode)
(TA = –40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter Symbol Conditions HS (high-speed main)
Mode
Unit
MIN. MAX.
SCLr clock frequency fSCL 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 100 pF, Rb = 2.8 kΩ
100Note1 kHz
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 100 pF, Rb = 2.7 kΩ
100Note1 kHz
2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V,
Cb = 100 pF, Rb = 5.5 kΩ
100Note1 kHz
Hold time when SCLr = “L” tLOW 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 100 pF, Rb = 2.8 kΩ
4600 ns
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 100 pF, Rb = 2.7 kΩ
4600 ns
2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V,
Cb = 100 pF, Rb = 5.5 kΩ
4650 ns
Hold time when SCLr = “H” tHIGH 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 100 pF, Rb = 2.8 kΩ
2700 ns
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 100 pF, Rb = 2.7 kΩ
2400 ns
2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V,
Cb = 100 pF, Rb = 5.5 kΩ
1830 ns
Data setup time (reception) tSU:DAT 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 100 pF, Rb = 2.8 kΩ
1/fMCK
+ 760 Note2
ns
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 100 pF, Rb = 2.7 kΩ
1/fMCK
+ 760 Note2
ns
2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V,
Cb = 100 pF, Rb = 5.5 kΩ
1/fMCK
+ 570 Note2
ns
Data hold time (transmission) tHD:DAT 4.0 V ≤ VDD ≤ 5.5 V, 2.7 V ≤ Vb ≤ 4.0 V,
Cb = 100 pF, Rb = 2.8 kΩ
0 1420 ns
2.7 V ≤ VDD < 4.0 V, 2.3 V ≤ Vb ≤ 2.7 V,
Cb = 100 pF, Rb = 2.7 kΩ
0 1420 ns
2.4 V ≤ VDD < 3.3 V, 1.6 V ≤ Vb ≤ 2.0 V,
Cb = 100 pF, Rb = 5.5 kΩ
0 1215 ns
Notes 1. The value must be equal to or less than fMCK/4.
2. Set tSU:DAT so that it will not exceed the hold time when SCLr = “L” or SCLr = “H”.
Cautions 1. Select the TTL input buffer and the N-ch open drain output (VDD tolerance) mode for the SDAr pin
and the N-ch open drain output (VDD tolerance) mode for the SCLr pin by using port input mode
register 1 (PIM1) and port output mode register 1 (POM1). For VIH and VIL, see the DC
characteristics with TTL input buffer selected.
2. IIC01 and IIC11 cannot communicate at different potential.
(Remarks are listed on the next page.)
RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018;
Page 93 of 106
Simplified I2C mode connection diagram (during communication at different potential)
SDAr
SCLr
SDA
SCL
User's device
V
b
R
b
V
b
R
b
RL78
microcontroller
Simplified I2C mode serial transfer timing (during communication at different potential)
SDAr
t
LOW
t
HIGH
t
HD : DAT
SCLr
t
SU : DAT
1/f
SCL
Remarks 1. R
b [Ω]: Communication line (SDAr, SCLr) pull-up resistance, Cb [F]: Communication line (SDAr, SCLr)
load capacitance, Vb [V]: Communication line voltage
2. r: IIC Number (r = 00, 20)
3. fMCK: Serial array unit operation clock frequency
(Operation clock to be set by the serial clock select register m (SPSm) and the CKSmn bit of serial mode
register mn (SMRmn).
m: Unit number (m = 0,1), n: Channel number (n = 0))
RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018;
Page 94 of 106
3.5.2 Serial interface IICA
(TA = –40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter Symbol Conditions HS (high-speed main) mode Unit
Standard Mode Fast Mode
MIN. MAX. MIN. MAX.
SCLA0 clock frequency fSCL Fast mode: fCLK ≥ 3.5 MHz 0 400 kHz
Normal mode: fCLK ≥ 1 MHz 0 100 kHz
Setup time of restart condition tSU:STA 4.7 0.6 µs
Hold timeNote 1 tHD:STA 4.0 0.6 µs
Hold time when SCLA0 = “L” tLOW 4.7 1.3 µs
Hold time when SCLA0 = “H” tHIGH 4.0 0.6 µs
Data setup time (reception) tSU:DAT 250 100 ns
Data hold time (transmission)Note 2 tHD:DAT 0 3.45 0 0.9 µs
Setup time of stop condition tSU:STO 4.0 0.6 µs
Bus-free time tBUF 4.7 1.3 µs
Notes 1. The first clock pulse is generated after this period when the start/restart condition is detected.
2. The maximum value (MAX.) of tHD:DAT is during normal transfer and a wait state is inserted in the ACK
(acknowledge) timing.
Caution Only in the 30-pin products, the values in the above table are applied even when bit 2 (PIOR2) in the
peripheral I/O redirection register (PIOR) is 1. At this time, the pin characteristics (IOH1, IOL1, VOH1,
VOL1) must satisfy the values in the redirect destination.
Remark The maximum value of Cb (communication line capacitance) and the value of Rb (communication line pull-up
resistor) at that time in each mode are as follows.
Normal mode: Cb = 400 pF, Rb = 2.7 kΩ
Fast mode: Cb = 320 pF, Rb = 1.1 kΩ
IICA serial transfer timing
t
LOW
t
R
t
HIGH
t
F
t
BUF
t
HD:DAT
t
SU:DAT
t
HD:STA
t
SU:STA
t
HD:STA
t
SU:STO
SCLA0
SDAA0
Stop
condition
Start
condition
Restart
condition
Stop
condition
RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018;
Page 95 of 106
3.6 Analog Characteristics
3.6.1 A/D converter characteristics
Classification of A/D converter characteristics
Input channel Reference Voltage
Reference voltage (+) = AVREFP
Reference voltage (–) = AVREFM
Reference voltage (+) = VDD
Reference voltage (–) = VSS
Reference voltage (+) = VBGR
Reference voltage (–) = AVREFM
ANI0 to ANI3 Refer to 3.6.1 (1). Refer to 3.6.1 (3). Refer to 3.6.1 (4).
ANI16 to ANI22 Refer to 3.6.1 (2).
Internal reference voltage
Temperature sensor
output voltage
Refer to 3.6.1 (1).
(1) When reference voltage (+) = AVREFP/ANI0 (ADREFP1 = 0, ADREFP0 = 1), reference voltage (–) = AVREFM/ANI1
(ADREFM = 1), target pin: ANI2, ANI3, internal reference voltage, and temperature sensor output voltage
(TA = 40 to +105°C, 2.4 V AVREFP VDD 5.5 V, VSS = 0 V, Reference voltage (+) = AVREFP, Reference voltage (–) =
AVREFM = 0 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Resolution RES 8 10 bit
Overall errorNote 1 AINL
10-bit resolution
AVREFP = VDD Note 3
1.2 ±3.5 LSB
Conversion time tCONV 10-bit resolution
Target pin: ANI2, ANI3
3.6 V ≤ VDD ≤ 5.5 V 2.125 39 µs
2.7 V ≤ VDD ≤ 5.5 V 3.1875 39 µs
2.4 V ≤ VDD ≤ 5.5 V 17 39 µs
10-bit resolution
Target pin: Internal
reference voltage, and
temperature sensor
output voltage
(HS (high-speed main)
mode)
3.6 V ≤ VDD ≤ 5.5 V 2.375 39 µs
2.7 V ≤ VDD ≤ 5.5 V 3.5625 39 µs
2.4 V ≤ VDD ≤ 5.5 V 17 39 µs
Zero-scale errorNotes 1, 2 EZS
10-bit resolution
AVREFP = VDD Note 3
±0.25 %FSR
Full-scale errorNotes 1, 2 EFS
10-bit resolution
AVREFP = VDD Note 3
±0.25 %FSR
Integral linearity errorNote 1 ILE 10-bit resolution
AVREFP = VDD Note 3
±2.5 LSB
Differential linearity error
Note 1
DLE 10-bit resolution
AVREFP = VDD Note 3
±1.5 LSB
Analog input voltage VAIN ANI2, ANI3 0 AVREFP V
Internal reference voltage
(HS (high-speed main) mode)
VBGR Note 4 V
Temperature sensor output voltage
(HS (high-speed main) mode)
VTMPS25 Note 4 V
(Notes are listed on the next page.)
RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018;
Page 96 of 106
Notes 1. Excludes quantization error (±1/2 LSB).
2. This value is indicated as a ratio (%FSR) to the full-scale value.
3. When AVREFP < VDD, the MAX. values are as follows.
Overall error: Add ±1.0 LSB to the MAX. value when AVREFP = VDD.
Zero-scale error/Full-scale error: Add ±0.05%FSR to the MAX. value when AVREFP = VDD.
Integral linearity error/ Differential linearity error: Add ±0.5 LSB to the MAX. value when AVREFP = VDD.
4. Refer to 3.6.2 Temperature sensor/internal reference voltage characteristics.
(2) When reference voltage (+) = AVREFP/ANI0 (ADREFP1 = 0, ADREFP0 = 1), reference voltage (–) = AVREFM/ANI1
(ADREFM = 1), target pin: ANI16 to ANI22
(TA = –40 to +105°C, 2.4 V AVREFP ≤ VDD ≤ 5.5 V, VSS = 0 V, Reference voltage (+) = AVREFP, Reference voltage (–) =
AVREFM = 0 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Resolution RES 8 10 bit
Overall error Note 1 AINL
10-bit resolution
AVREFP = VDD Note 3
1.2 ±5.0 LSB
Conversion time tCONV 10-bit resolution
Target ANI pin: ANI16 to ANI22
3.6 V ≤ VDD ≤ 5.5 V 2.125 39 µs
2.7 V ≤ VDD ≤ 5.5 V 3.1875 39 µs
2.4 V ≤ VDD ≤ 5.5 V 17 39 µs
Zero-scale error Notes 1, 2 EZS 10-bit resolution
AVREFP = VDD Note 3
±0.35 %FSR
Full-scale error Notes 1, 2 EFS
10-bit resolution
AVREFP = VDD Note 3
±0.35 %FSR
Integral linearity error Note 1 ILE 10-bit resolution
AVREFP = VDD Note 3
±3.5 LSB
Differential linearity
error Note 1
DLE 10-bit resolution
AVREFP = VDD Note 3
±2.0 LSB
Analog input voltage VAIN ANI16 to ANI22 0 AVREFP
and VDD
V
Notes 1. Excludes quantization error (±1/2 LSB).
2. This value is indicated as a ratio (%FSR) to the full-scale value.
3. When AVREFPVDD, the MAX. values are as follows.
Overall error: Add ±4.0 LSB to the MAX. value when AVREFP = VDD.
Zero-scale error/Full-scale error: Add ±0.20%FSR to the MAX. value when AVREFP = VDD.
Integral linearity error/ Differential linearity error: Add ±2.0 LSB to the MAX. value when AVREFP = VDD.
RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018;
Page 97 of 106
(3) When reference voltage (+) = VDD (ADREFP1 = 0, ADREFP0 = 0), reference voltage () = VSS (ADREFM = 0),
target pin: ANI0 to ANI3, ANI16 to ANI22, internal reference voltage, and temperature sensor output voltage
(TA = –40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V, Reference voltage (+) = VDD, Reference voltage (–) = VSS)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Resolution RES 8 10 bit
Overall errorNote 1 AINL 10-bit resolution 1.2 ±7.0 LSB
Conversion time tCONV 10-bit resolution
Target pin: ANI0 to ANI3,
ANI16 to ANI22
3.6 V ≤ VDD ≤ 5.5 V 2.125 39 µs
2.7 V ≤ VDD ≤ 5.5 V 3.1875 39 µs
2.4 V ≤ VDD ≤ 5.5 V 17 39 µs
Conversion time tCONV 10-bit resolution
Target pin: internal reference
voltage, and temperature
sensor output voltage (HS
(high-speed main) mode)
3.6 V ≤ VDD ≤ 5.5 V 2.375 39 µs
2.7 V ≤ VDD ≤ 5.5 V 3.5625 39 µs
2.4 V ≤ VDD ≤ 5.5 V 17 39 µs
Zero-scale errorNotes 1, 2 EZS 10-bit resolution ±0.60 %FSR
Full-scale errorNotes 1, 2 EFS 10-bit resolution ±0.60 %FSR
Integral linearity errorNote 1 ILE 10-bit resolution ±4.0 LSB
Differential linearity error Note 1 DLE 10-bit resolution ±2.0 LSB
Analog input voltage VAIN ANI0 to ANI3, ANI16 to ANI22 0 VDD V
Internal reference voltage
(HS (high-speed main) mode)
VBGR Note 3 V
Temperature sensor output voltage
(HS (high-speed main) mode)
VTMPS25 Note 3 V
Notes 1. Excludes quantization error (±1/2 LSB).
2. This value is indicated as a ratio (%FSR) to the full-scale value.
3. Refer to 3.6.2 Temperature sensor/internal reference voltage characteristics.
RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018;
Page 98 of 106
(4) When reference voltage (+) = Internal reference voltage (ADREFP1 = 1, ADREFP0 = 0), reference voltage (–) =
AVREFM (ADREFM = 1), target pin: ANI0, ANI2, ANI3, and ANI16 to ANI22
(TA = –40 to +105°C, 2.4 V VDD 5.5 V, VSS = 0 V, Reference voltage (+) = VBGR Note 3, Reference voltage (–) =
AVREFM Note 4 = 0 V, HS (high-speed main) mode)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Resolution RES 8 bit
Conversion time tCONV 8-bit resolution 17 39 µs
Zero-scale errorNotes 1, 2 EZS 8-bit resolution ±0.60 %FSR
Integral linearity errorNote 1 ILE 8-bit resolution ±2.0 LSB
Differential linearity error Note 1 DLE 8-bit resolution ±1.0 LSB
Analog input voltage VAIN 0 VBGR Note 3 V
Notes 1. Excludes quantization error (±1/2 LSB).
2. This value is indicated as a ratio (%FSR) to the full-scale value.
3. Refer to 3.6.2 Temperature sensor/internal reference voltage characteristics.
4. When reference voltage (–) = VSS, the MAX. values are as follows.
Zero-scale error: Add ±0.35%FSR to the MAX. value when reference voltage (–) = AVREFM.
Integral linearity error: Add ±0.5 LSB to the MAX. value when reference voltage (–) = AVREFM.
Differential linearity error: Add ±0.2 LSB to the MAX. value when reference voltage (–) = AVREFM.
RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018;
Page 99 of 106
3.6.2 Temperature sensor/internal reference voltage characteristics
(TA = –40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V, HS (high-speed main) mode
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Temperature sensor output voltage VTMPS25 Setting ADS register = 80H,
TA = +25°C
1.05 V
Internal reference voltage VBGR Setting ADS register = 81H 1.38 1.45 1.50 V
Temperature coefficient FVTMPS Temperature sensor output
voltage that depends on the
temperature
–3.6 mV/°C
Operation stabilization wait time tAMP 5 µs
3.6.3 POR circuit characteristics
(TA = –40 to +105°C, VSS = 0 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Detection voltage VPOR Power supply rise time 1.45 1.51 1.57 V
VPDR Power supply fall time 1.44 1.50 1.56 V
Minimum pulse width Note TPW 300
µs
Note Minimum time required for a POR reset when VDD exceeds below VPDR. This is also the minimum time required
for a POR reset from when VDD exceeds below 0.7 V to when VDD exceeds VPOR while STOP mode is entered or
the main system clock is stopped through setting bit 0 (HIOSTOP) and bit 7 (MSTOP) in the clock operation
status control register (CSC).
T
PW
V
POR
V
PDR
or 0.7 V
Supply voltage (V
DD
)
RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018;
Page 100 of 106
3.6.4 LVD circuit characteristics
LVD Detection Voltage of Reset Mode and Interrupt Mode
(TA = 40 to +105°C, VPDR ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Detection supply voltage VLVD0 Power supply rise time 3.90 4.06 4.22 V
Power supply fall time 3.83 3.98 4.13 V
VLVD1 Power supply rise time 3.60 3.75 3.90 V
Power supply fall time 3.53 3.67 3.81 V
VLVD2 Power supply rise time 3.01 3.13 3.25 V
Power supply fall time 2.94 3.06 3.18 V
VLVD3 Power supply rise time 2.90 3.02 3.14 V
Power supply fall time 2.85 2.96 3.07 V
VLVD4 Power supply rise time 2.81 2.92 3.03 V
Power supply fall time 2.75 2.86 2.97 V
VLVD5 Power supply rise time 2.70 2.81 2.92 V
Power supply fall time 2.64 2.75 2.86 V
VLVD6 Power supply rise time 2.61 2.71 2.81 V
Power supply fall time 2.55 2.65 2.75 V
VLVD7 Power supply rise time 2.51 2.61 2.71 V
Power supply fall time 2.45 2.55 2.65 V
Minimum pulse width tLW 300 µs
Detection delay time 300 µs
RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018;
Page 101 of 106
LVD detection voltage of interrupt & reset mode
(TA = –40 to +105°C, VPDR ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Interrupt and reset
mode
VLVDD0 VPOC2, VPOC1, VPOC1 = 0, 1, 1, falling reset voltage 2.64 2.75 2.86 V
VLVDD1 LVIS1, LVIS0 = 1, 0
Rising reset release voltage 2.81 2.92 3.03 V
Falling interrupt voltage 2.75 2.86 2.97 V
VLVDD2 LVIS1, LVIS0 = 0, 1
Rising reset release voltage 2.90 3.02 3.14 V
Falling interrupt voltage 2.85 2.96 3.07 V
VLVDD3 LVIS1, LVIS0 = 0, 0
Rising reset release voltage 3.90 4.06 4.22 V
Falling interrupt voltage 3.83 3.98 4.13 V
3.6.5 Power supply voltage rising slope characteristics
(TA = –40 to +105°C, VSS = 0 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Power supply voltage rising slope SVDD 54 V/ms
Caution Make sure to keep the internal reset state by the LVD circuit or an external reset until VDD reaches the
operating voltage range shown in 3.4 AC Characteristics.
RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018;
Page 102 of 106
3.7 RAM Data Retention Characteristics
(TA = –40 to +105°C, VSS = 0 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Data retention supply voltage VDDDR 1.44 Note 5.5 V
Note This depends on the POR detection voltage. For a falling voltage, data in RAM are retained until the voltage
reaches the level that triggers a POR reset but not once it reaches the level at which a POR reset is generated.
V
DD
STOP instruction execution
Standby release signal
(interrupt request)
STOP mode
RAM data retention
V
DDDR
Operation mod
e
3.8 Flash Memory Programming Characteristics
(TA = –40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
System clock frequency fCLK 1 24 MHz
Code flash memory rewritable times
Notes 1, 2, 3
Cerwr Retained for 20 years
TA = 85°C Note 4
1,000 Times
Data flash memory rewritable times
Notes 1, 2, 3
Retained for 1 year
TA = 25°C
1,000,000
Retained for 5 years
TA = 85°C Note 4
100,000
Retained for 20 years
TA = 85°C Note 4
10,000
Notes 1. 1 erase + 1 write after the erase is regarded as 1 rewrite. The retaining years are until next rewrite after the
rewrite.
2. When using flash memory programmer and Renesas Electronics self programming library
3. These are the characteristics of the flash memory and the results obtained from reliability testing by
Renesas Electronics Corporation.
4. This temperature is the average value at which data are retained.
RL78/G12 3. ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS TA = –40 to +105°C)
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018;
Page 103 of 106
3.9 Dedicated Flash Memory Programmer Communication (UART)
(TA = –40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Transfer rate During serial programming 115,200 1,000,000 bps
3.10 Timing of Entry to Flash Memory Programming Modes
(TA = –40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Time to complete the communication for the initial
setting after the external reset is released
tSUINIT POR and LVD reset are released
before external release
100 ms
Time to release the external reset after the TOOL0
pin is set to the low level
tSU POR and LVD reset are released
before external release
10 µs
Time to hold the TOOL0 pin at the low level after the
external reset is released
(excluding the processing time of the firmware to
control the flash memory)
tHD POR and LVD reset are released
before external release
1 ms
RESET
TOOL0
<1> <2> <3>
t
SUINIT
t
HD
+ software
processing
time 1-byte data for
setting mode
t
SU
<4>
<1> The low level is input to the TOOL0 pin.
<2> The external reset is released (POR and LVD reset must be released before the external
reset is released.).
<3> The TOOL0 pin is set to the high level.
<4> Setting of the flash memory programming mode by UART reception and complete the baud
rate setting.
Remark t
SUINIT: Communication for the initial setting must be completed within 100 ms after the external reset is released
during this period.
tSU: Time to release the external reset after the TOOL0 pin is set to the low level
tHD: Time to hold the TOOL0 pin at the low level after the external reset is released (excluding the processing
time of the firmware to control the flash memory)
RL78/G12 4. PACKAGE DRAWINGS
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 104 of 106
4. PACKAGE DRAWINGS
4.1 20-pin products
R5F1026AASP, R5F10269ASP, R5F10268ASP, R5F10267ASP, R5F10266ASP
R5F1036AASP, R5F10369ASP, R5F10368ASP, R5F10367ASP, R5F10366ASP
R5F1026ADSP, R5F10269DSP, R5F10268DSP, R5F10267DSP, R5F10266DSP
R5F1036ADSP, R5F10369DSP, R5F10368DSP, R5F10367DSP, R5F10366DSP
R5F1026AGSP, R5F10269GSP, R5F10268GSP, R5F10267GSP, R5F10266GSP
2012 Renesas Electronics Corporation. All rights reserved.
JEITA Package Code RENESAS Code Previous Code MASS (TYP.) [g]
P-LSSOP20-4.4x6.5-0.65 PLSP0020JB-A P20MA-65-NAA-1 0.1
20
110
detail of lead end
ITEM DIMENSIONS
D
E
e
A1
A
A2
L
c
y
bp
0.10
0.10
0 to 10
(UNIT:mm)
AA2
A1 e
y
HE
c
6.50
4.40
0.20
0.10
6.40
0.10
0.10
1.45 MAX.
1.15
0.65 0.12
0.10
0.05
0.22
0.05
0.02
0.15
0.50 0.20
11
bp
HE
E
D
L
3
2
1
NOTE
1.Dimensions “ 1” and 2”
2.Dimension “ does not include tr
RL78/G12 4. PACKAGE DRAWINGS
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 105 of 106
4.2 24-pin products
R5F1027AANA, R5F10279ANA, R5F10278ANA, R5F10277ANA
R5F1037AANA, R5F10379ANA, R5F10378ANA, R5F10377ANA
R5F1027ADNA, R5F10279DNA, R5F10278DNA, R5F10277DNA
R5F1037ADNA, R5F10379DNA, R5F10378DNA, R5F10377DNA
R5F1027AGNA, R5F10279GNA, R5F10278GNA, R5F10277GNA
2012 Renesas Electronics Corporation. All rights reserved.
S
y
e
Lp
SxbA B
M
A
D
E
18
12
13
6
7
1
24
A
S
B
A
D
E
A
e
Lp
x
y
4.00 0.05
0.50
0.05
0.05
4.00 0.05
0.75 0.05
0.40 0.10
S
D2
E2
(UNIT:mm)
ITEM DIMENSIONS
19
DETAIL OF A PART
EXPOSED DIE PAD
ITEM D2 E2
A
MIN NOM MAX
2.45 2.50
EXPOSED
DIE PAD
VARIATIONS
2.55
MIN NOM MAX
2.452.50 2.55
b0.25 0.05
0.07
JEITA Package Code RENESAS Code Previous Code MASS (TYP.) [g]
P-HWQFN24-4x4-0.50 PWQN0024KE-A P24K8-50-CAB-1 0.04
RL78/G12 4. PACKAGE DRAWINGS
R01DS0193EJ0220 Rev.2.20
Oct 31, 2018
Page 106 of 106
4.3 30-pin products
R5F102AAASP, R5F102A9ASP, R5F102A8ASP, R5F102A7ASP
R5F103AAASP, R5F103A9ASP, R5F103A8ASP, R5F103A7ASP
R5F102AADSP, R5F102A9DSP, R5F102A8DSP, R5F102A7DSP
R5F103AADSP, R5F103A9DSP, R5F103A8DSP, R5F103A7DSP
R5F102AAGSP, R5F102A9GSP, R5F102A8GSP, R5F102A7GSP
JEITA Package Code RENESAS Code Previous Code MASS (TYP.) [g]
P-LSSOP30-0300-0.65 PLSP0030JB-B S30MC-65-5A4-3 0.18
S
S
H
J
T
I
G
D
E
F
CB
K
PL
U
N
ITEM
B
C
I
L
M
N
A
K
D
E
F
G
H
J
P
30 16
115
A
detail of lead end
M
M
T
MILLIMETERS
0.65 (T.P.)
0.45 MAX.
0.13
0.5
6.1 0.2
0.10
9.85 0.15
0.17 0.03
0.1 0.05
0.24
1.3 0.1
8.1 0.2
1.2
0.08
0.07
1.0 0.2
35
3
0.25
0.6 0.15U
NOTE
Each lead centerline is located within 0.13 mm of
its true position (T.P.) at maximum material condition.
2012 Renesas Electronics Corporation. All rights reserved.
C - 1
Revision History RL78/G12 Datasheet
Rev. Date
Description
Page Summary
1.00 Dec 10, 2012 - First Edition issued
2.00 Sep 06, 2013 1 Modification of 1.1 Features
3 Modification of 1.2 List of Part Numbers
4 Modification of Table 1-1. List of Ordering Part Numbers, Note, and Caution
7 to 9 Modification of package name in 1.4.1 to 1.4.3
14 Modification of tables in 1.7 Outline of Functions
17 Modification of description of table in 2.1 Absolute Maximum Ratings (TA =
25°C)
18 Modification of table, Note, and Caution in 2.2.1 X1 oscillator characteristics
18 Modification of table in 2.2.2 On-chip oscillator characteristics
19 Modification of Note 3 in 2.3.1 Pin characteristics (1/4)
20 Modification of Note 3 in 2.3.1 Pin characteristics (2/4)
23 Modification of Notes 1 and 2 in (1) 20-, 24-pin products (1/2)
24 Modification of Notes 1 and 3 in (1) 20-, 24-pin products (2/2)
25 Modification of Notes 1 and 2 in (2) 30-pin products (1/2)
26 Modification of Notes 1 and 3 in (2) 30-pin products (2/2)
27 Modification of (3) Peripheral functions (Common to all products)
28 Modification of table in 2.4 AC Characteristics
29 Addition of Minimum Instruction Execution Time during Main System Clock
Operation
30 Modification of figures of AC Timing Test Point and External Main System
Clock Timing
31 Modification of figure of AC Timing Test Point
31 Modification of description and Note 2 in (1) During communication at same
potential (UART mode)
32 Modification of description in (2) During communication at same potential (CSI
mode)
33 Modification of description in (3) During communication at same potential (CSI
mode)
34 Modification of description in (4) During communication at same potential (CSI
mode)
36 Modification of table and Note 2 in (5) During communication at same
potential (simplified I2C mode)
38, 39 Modification of table and Notes 1 to 9 in (6) Communication at different
potential
(1.8 V, 2.5 V, 3 V) (UART mode)
40 Modification of Remarks 1 to 3 in (6) Communication at different potential (1.8
V,
2.5 V, 3 V) (UART mode)
41 Modification of table in (7) Communication at different potential (2.5 V, 3 V) (CSI
mode)
42 Modification of Caution in (7) Communication at different potential (2.5 V, 3 V) (CSI
mode)
43 Modification of table in (8) Communication at different potential (1.8 V, 2.5 V, 3
V) (CSI mode) (1/3)
44 Modification of table and Notes 1 and 2 in (8) Communication at different
potential (1.8 V, 2.5 V, 3 V) (CSI mode) (2/3)
45 Modification of table, Note 1, and Caution 1 in (8) Communication at different
potential (1.8 V, 2.5 V, 3 V) (CSI mode) (3/3)
47 Modification of table in (9) Communication at different potential (1.8 V, 2.5 V, 3
V) (CSI mode)
50 Modification of table, Note 1, and Caution 1 in (10) Communication at different
potential (1.8 V, 2.5 V, 3 V) (simplified I2C mode)
C - 2
Rev. Date
Description
Page Summary
2.00 Sep 06, 2013 52 Modification of Remark in 2.5.2 Serial interface IICA
53 Addition of table to 2.6.1 A/D converter characteristics
53 Modification of description in 2.6.1 (1)
54 Modification of Notes 3 to 5 in 2.6.1 (1)
54 Modification of description and Notes 2 to 4 in 2.6.1 (2)
2.00 Sep 06, 2013 55 Modification of description and Notes 3 and 4 in 2.6.1 (3)
56 Modification of description and Notes 3 and 4 in 2.6.1 (4)
57 Modification of table in 2.6.2 Temperature sensor/internal reference voltage
characteristics
57 Modification of table and Note in 2.6.3 POR circuit characteristics
58 Modification of table in 2.6.4 LVD circuit characteristics
59 Modification of table of LVD detection voltage of interrupt & reset mode
59 Modification of number and title to 2.6.5 Power supply voltage rising slope
characteristics
61 Modification of table, figure, and Remark in 2.10 Timing of Entry to Flash
Memory Programming Modes
62 to 103 Addition of products of industrial applications (G: TA = -40 to +105°C)
104 to
106
Addition of products of industrial applications (G: TA = -40 to +105°C)
2.10 Mar 25, 2016 6 Modification of Figure 1-1 Part Number, Memory Size, and Package of
RL78/G12
7 Modification of Table 1-1 List of Ordering Part Numbers
8 Addition of product name (RL78/G12) and description (Top View) in 1.4.1 20-
pin products
9 Addition of product name (RL78/G12) and description (Top View) in 1.4.2 24-
pin products
10 Addition of product name (RL78/G12) and description (Top View) in 1.4.3 30-
pin products
15 Modification of description in 1.7 Outline of Functions
16 Modification of description, and addition of target products
52 Modification of note 2 in 2.5.2 Serial interface IICA
60 Modification of title and note, and addition of caution in 2.7 RAM Data
Retention Characteristics
60 Modification of conditions in 2.8 Flash Memory Programming Characteristics
62 Modification of description, and addition of target products and remark
94 Modification of note 2 in 3.5.2 Serial interface IICA
102 Modification of title and note in 3.7 RAM Data Retention Characteristics
102 Modification of conditions in 3.8 Flash Memory Programming Characteristics
104 to
106
Addition of package name
2.20 Oct 31, 2018 4 Modification of Table 1-1 List of Ordering Part Numbers
7 Modification of pin configuration diagram in 1.4.1 20-pin products
All trademarks and registered trademarks are the property of their respective owners.
SuperFlash is a registered trademark of Silicon Storage Technology, Inc. in several countries including the United
States and Japan.
Caution: This product uses SuperFlash® technology licensed from Silicon Storage Technology, Inc.
NOTES FOR CMOS DEVICES
(1) VOLTAGE APPLICATION WAVEFORM AT INPUT PIN: Waveform distortion due to input noise or a
reflected wave may cause malfunction. If the input of the CMOS device stays in the area between VIL
(MAX) and VIH (MIN) due to noise, etc., the device m ay malfunction. Take care to prevent chattering noise
from entering the device when the input level is fixed, and also in the transition period when the input level
passes through the area between VIL (MAX) and VIH (MIN).
(2) HANDLING OF UNUSED INPUT PINS: Uncon nected CMOS device inputs can be cause of malfunction. If
an input pin is unconnected, it is possible that an internal input level may be generated due to noise, etc.,
causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of
CMOS devices must be fixed high or lo w by using pull-up or pull-do wn circuitry. Each unused pin sho uld be
connected to VDD or GND via a resistor if there is a possibility that it will be an output pin. All handling
related to unused pins must be judged separately for each device and according to related specifications
governing the device.
(3) PRECAUTION AGAINST ESD: A strong electric field, when exposed to a MOS device, can cause
destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop
generation of static electricity as much as possible, and quickly dissipate it when it has occurred.
Environmental control must be adequate. When it is dry, a humidifier should be used. It is recommended
to avoid using insulators that easily build up static electricity. Semiconductor devices must be stored and
transported in an anti-static container, static shiel ding bag or conductive material. All test and me asurement
tools including work benches and flo ors should b e gr ound e d. The operator shou ld be gr ounded usin g a wrist
strap. Semiconductor devices must not be touched with bare hands. Similar precautions need to be take n
for PW boards with mounted semiconductor devices.
(4) STATUS BEFORE INITIALIZATION: Power-on does not necessarily define the initial status of a MOS
device. Immediately after the power source is turned ON, devices with reset functions have not yet been
initialized. Hence, power-on does not guarantee output pin levels, I/O settings or contents of registers. A
device is not initialized until the reset signal is received. A reset operation must be executed immediately
after power-on for devices with reset functions.
(5) POWER ON/OFF SEQUENCE: In the case of a device that uses different power supplies for the internal
operation and exter nal interface, as a rule, s witch on the external power supply after s witching on the in ternal
power supply. When s witching the power supply off, as a rule, switch off the external power supply and then
the internal power supply. Use of the reverse power on/off sequences may result in the application of an
overvoltage to the internal elements of the device, causing malfunction and degradation of internal elements
due to the passage of an abnormal current. The correct power on/off sequence must be judged separately
for each device and according to related specifications governing the device.
(6) INPUT OF SIGNAL DURING POWER OFF STATE : Do not input signals or an I/O pull-up power supply
while the device is not powered. The current injection that results from input of such a signal or I/O pull-up
power supply may cause malfunction and the abnormal current that passes in the device at this time may
cause degradation of internal elements. Input of signals during the power off state must be judged
separately for each device an d accord ing to related specifications governing the device.
http://www.renesas.com
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics Corporation
TOYOSU FORESIA, 3-2-24 Toyosu, Koto-ku, Tokyo 135-0061, Japan
Renesas Electronics America Inc.
1001 Murphy Ranch Road, Milpitas, CA 95035, U.S.A.
Tel: +1-408-432-8888, Fax: +1-408-434-5351
Renesas Electronics Canada Limited
9251 Yonge Street, Suite 8309 Richmond Hill, Ontario Canada L4C 9T3
Tel: +1-905-237-2004
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-651-700
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-6503-0, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
Room 1709 Quantum Plaza, No.27 ZhichunLu, Haidian District, Beijing, 100191 P. R. China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 301, Tower A, Central Towers, 555 Langao Road, Putuo District, Shanghai, 200333 P. R. China
Tel: +86-21-2226-0888, Fax: +86-21-2226-0999
Renesas Electronics Hong Kong Limited
Unit 1601-1611, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2265-6688, Fax: +852 2886-9022
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei 10543, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre, Singapore 339949
Tel: +65-6213-0200, Fax: +65-6213-0300
Renesas Electronics Malaysia Sdn.Bhd.
Unit 1207, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics India Pvt. Ltd.
No.777C, 100 Feet Road, HAL 2nd Stage, Indiranagar, Bangalore 560 038, India
Tel: +91-80-67208700, Fax: +91-80-67208777
Renesas Electronics Korea Co., Ltd.
17F, KAMCO Yangjae Tower, 262, Gangnam-daero, Gangnam-gu, Seoul, 06265 Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5338
SALES OFFICES
© 2018 Renesas Electronics Corporation. All rights reserved.
Colophon 7.2
(Rev.4.0-1 November 2017)
Notice
1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for
the incorporation or any other use of the circuits, software, and information in the design of your product or system. Renesas Electronics disclaims any and all liability for any losses and damages incurred by
you or third parties arising from the use of these circuits, software, or information.
2. Renesas Electronics hereby expressly disclaims any warranties against and liability for infringement or any other claims involving patents, copyrights, or other intellectual property rights of third parties, by or
arising from the use of Renesas Electronics products or technical information described in this document, including but not limited to, the product data, drawings, charts, programs, algorithms, and application
examples.
3. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others.
4. You shall not alter, modify, copy, or reverse engineer any Renesas Electronics product, whether in whole or in part. Renesas Electronics disclaims any and all liability for any losses or damages incurred by
you or third parties arising from such alteration, modification, copying or reverse engineering.
5. Renesas Electronics products are classified according to the following two quality grades: “Standard” and “High Quality”. The intended applications for each Renesas Electronics product depends on the
product’s quality grade, as indicated below.
"Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic
equipment; industrial robots; etc.
"High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control (traffic lights); large-scale communication equipment; key financial terminal systems; safety control equipment; etc.
Unless expressly designated as a high reliability product or a product for harsh environments in a Renesas Electronics data sheet or other Renesas Electronics document, Renesas Electronics products are
not intended or authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems; surgical implantations; etc.), or may cause
serious property damage (space system; undersea repeaters; nuclear power control systems; aircraft control systems; key plant systems; military equipment; etc.). Renesas Electronics disclaims any and all
liability for any damages or losses incurred by you or any third parties arising from the use of any Renesas Electronics product that is inconsistent with any Renesas Electronics data sheet, user’s manual or
other Renesas Electronics document.
6. When using Renesas Electronics products, refer to the latest product information (data sheets, user’s manuals, application notes, “General Notes for Handling and Using Semiconductor Devices” in the
reliability handbook, etc.), and ensure that usage conditions are within the ranges specified by Renesas Electronics with respect to maximum ratings, operating power supply voltage range, heat dissipation
characteristics, installation, etc. Renesas Electronics disclaims any and all liability for any malfunctions, failure or accident arising out of the use of Renesas Electronics products outside of such specified
ranges.
7. Although Renesas Electronics endeavors to improve the quality and reliability of Renesas Electronics products, semiconductor products have specific characteristics, such as the occurrence of failure at a
certain rate and malfunctions under certain use conditions. Unless designated as a high reliability product or a product for harsh environments in a Renesas Electronics data sheet or other Renesas
Electronics document, Renesas Electronics products are not subject to radiation resistance design. You are responsible for implementing safety measures to guard against the possibility of bodily injury, injury
or damage caused by fire, and/or danger to the public in the event of a failure or malfunction of Renesas Electronics products, such as safety design for hardware and software, including but not limited to
redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult
and impractical, you are responsible for evaluating the safety of the final products or systems manufactured by you.
8. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. You are responsible for carefully and
sufficiently investigating applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive, and using Renesas Electronics
products in compliance with all these applicable laws and regulations. Renesas Electronics disclaims any and all liability for damages or losses occurring as a result of your noncompliance with applicable
laws and regulations.
9. Renesas Electronics products and technologies shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws
or regulations. You shall comply with any applicable export control laws and regulations promulgated and administered by the governments of any countries asserting jurisdiction over the parties or
transactions.
10. It is the responsibility of the buyer or distributor of Renesas Electronics products, or any other party who distributes, disposes of, or otherwise sells or transfers the product to a third party, to notify such third
party in advance of the contents and conditions set forth in this document.
11. This document shall not be reprinted, reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products.
(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its directly or indirectly controlled subsidiaries.
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.