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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
©2014 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
FPF1C2P5BF07A Rev. C2
FPF1C2P5BF07A F1 Module solution for PV-Application
July. 2014
FPF1C2P5BF07A
F1 Module solution for PV-Application
General Description
Fairchild's brand-new DC-DC module is designed for a power
stage that needs more compact design. And the Press-fit techn-
ology provides simple and reliable mounting. This module is op-
timized for the application such as solar inverter where a high
efficiency and robust design are needed.
Electrical Features
• High Efficiency
• Low Conduction and Switching losses
•Low R
DS(ON) : 90 mΩ max.
• Fast Recovery Body Diode
• Built-in NTC for temperature monitoring
Mechanical Features
• Compact size : F1 Package
• Press-fit contact technology
Applications
• Solar Inverter
Certification
• UL approved (E209204)
Package Code: F1
Internal Circuit Diagram
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol Description Rating Units
VDSS Drain-Source Voltage 650 V
VGSS Gate-Source Voltage ± 20 V
IDContinuous Drain Current @ TC = 25°C 36 A
@ TC = 80°C 27 A
IDM Pulsed Drain Current Limited by TJ max. 156 A
IS Continuous Source-Drain Forward Current 36 A
ISM Maximum Pulsed Source-Drain Forward Current 156 A
PDMaximum Power Dissipation @ TC = 25°C 250 W
TJ Operating Junction Temperature -40 to +150 °C
©2014 Fairchild Semiconductor Corporation 2www.fairchildsemi.com
FPF1C2P5BF07A Rev. C2
FPF1C2P5BF07A F1 Module solution for PV-Application
Absolute Maximum Ratings TC = 25°C unless otherwise noted. (Continued)
Symbol Description Rating Units
Module
TSTG Storage Temperature -40 to +125 °C
VISO Isolation Voltage @ AC 1MIN 2500 V
Iso._Material Internal Isolation Material Al2O3
FMOUNT Mounting Force per Clamp 20 to 50 N
Weight Typ. 22 g
Creepage Terminal to Heatshink 11.5 mm
Terminal to Terminal 6.3 mm
Clearance Terminal to Heatshink 10.0 mm
Terminal to Terminal 5.0 mm
Package Marking and Ordering Information
Device Device Marking Package Packing Type Quantity / Tray
FPF1C2P5BF07A FPF1C2P5BF07A F1 Tray 22
©2014 Fairchild Semiconductor Corporation 3www.fairchildsemi.com
FPF1C2P5BF07A Rev. C2
FPF1C2P5BF07A F1 Module solution for PV-Application
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol Parameter Conditions Min. Typ. Max. Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 1 mA 650 - - V
IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS= 0 V--25μA
IGSS Gate-Body Leakage Current, Forward VGS = 20 V, VDS= 0 V--2.5μA
On Characteristics
VGS(th) Gate-Source Threshold Voltage VGS = VDS, ID= 250 μA-3.8-V
RDS(ON) Static Drain-Source On-Resistance ID = 27 A, VGS = 10 V--90mΩ
ID = 27 A, VGS = 10 V @TC = 125°C - 135 - mΩ
ID = 47 A, VGS = 10 V-76-mΩ
Switching Characteristics
td(on) Turn-On Delay Time VCC = 380 V
ID = 27A
VGS = 10 V
RG(ON) = 51 Ω
RG(OFF) = 3 Ω
Inductive Load
TC = 25 °C
- 192 - ns
trRise Time -75- ns
td(off) Turn-Off Delay Time - 140 - ns
tfFall Time -13- ns
EON Turn-On Switching Loss per Pulse - 2.29 - mJ
EOFF Turn-Off Switching Loss per Pulse - 58 - μJ
td(on) Turn-On Delay Time VCC = 380 V
ID = 27 A
VGS = 10 V
RG(ON) = 51 Ω
RG(OFF) = 3 Ω
Inductive Load
TC = 125 °C
- 159 - ns
trRise Time -82- ns
td(off) Turn-Off Delay Time - 156 - ns
tfFall Time -13- ns
EON Turn-On Switching Loss per Pulse - 4.06 - mJ
EOFF Turn-Off Switching Loss per Pulse - 65 - μJ
Qg(total) Total Gate Charge VDS = 380 V, VGS = 0V...+10 V,
ID = 27 A
- 155 - nC
RθJC Thermal Resistance of Junction to Case per Chip - - 0.5 °C/W
Switching Characteristics : Body Diode
VSD Source-Drain Diode Forward Voltage ISD = 27 A, VGS = 0 V--1.5V
ISD = 47 A, VGS = 0 V-1.3-V
trr Reverse Recovery Time ISD = 27 A
dIF/dt = 364 A/μs
- 109 ns
Irr Reverse Recovery Current - 39 - A
Qrr Reverse Recovery Charge - 2000 - nC
trr Reverse Recovery Time ISD = 27A
dIF/dt = 320 A/μs @TC = 125°C
- 179 ns
Irr Reverse Recovery Current - 55 - A
Qrr Reverse Recovery Charge - 4802 - nC
NTC
RNTC Rated Resistance TC = 25°C - 10 - kΩ
TC = 100°C - 936 - Ω
Tolerance TC = 25°C -3 - +3 %
PDPower Dissipation TC = 25°C - - 20 mW
BValue B-Constance B25/50 - 3450 - K
B25/100 - 3513 - K
©2014 Fairchild Semiconductor Corporation 4www.fairchildsemi.com
FPF1C2P5BF07A Rev. C2
FPF1C2P5BF07A F1 Module solution for PV-Application
Typical Performance Characteristic
Fig 1. On-Region Characteristics Fig 2. On-Resistance Variation
vs. Drain Current and Gate Voltage
0 5 10 15 20
0
20
40
60
80
100
120
140
160
* Note:
1. 250μs pulse test
VGS = 20 V
15 V
10 V
8 V
6 V
ID, Drain Current[A]
VDS, Drain-Source Voltage[V]
0 40 80 120 160
0.04
0.08
0.12
0.16
0.20
RDS(ON) [Ω],
Drain to Source On-Resistance
ID, Drain Current [A]
VGS = 10 V
VGS = 20 V
Fig 3. On-Resistance Variation vs. Temperature Fig 4. Body Diode Forward Voltage Variation
vs. Source Current and Temperature
-50 -25 0 25 50 75 100 125 150 175
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
* Notes:
1. VGS = 10 V
2. ID = 27 A
RDS(ON) [Ω], [Normalized]
Drain to Source On-Resistance
T
C
, Case Temperature [°C]
0.3 0.6 0.9 1.2 1.5 1.8 2.1
0
30
60
90
120
150
TC = 25°C
TC = 80°C
TC = 125°C
IS, Reverse Drain Current [A]
V
SD
, Body Diode Forward Voltage [V]
Fig 5. Turn-Off Loss vs. Drain Current
0 5 10 15 20 25 30 35
0
20
40
60
80
100
* Notes:
1. with an inductive load
2. VDS = 380 V
3. VGS = 10 V
4. Rg(on) = 51 Ω
5. Rg(off) = 3 Ω
TC = 125°C
TC = 25°C
Eoff, Turn-off Loss [uJ]
ID, Drain Current [A]
0 5 10 15 20 25 30 35
0
1
2
3
4
5
6
TC = 25°C
* Notes:
1. with an inductive load
2. VDS = 380 V
3. VGS = 10 V
4. Rg(on) = 51 Ω
5. Rg(off) = 3 Ω
TC = 125°C
Eon, Turn-on Loss [mJ]
ID, Drain Current [A]
Fig 6. Turn-On Loss vs. Drain Current
©2014 Fairchild Semiconductor Corporation 5www.fairchildsemi.com
FPF1C2P5BF07A Rev. C2
FPF1C2P5BF07A F1 Module solution for PV-Application
Fig 7. Turn-Off Loss
vs. Turn-Off Gate Resistor Values
Fig 8. Transient Thermal Response Curve
Fig 9. Typical NTC Value vs. Temperature
0 5 10 15 20
20
40
60
80
100
120
140
160
* Note:
1. 250μs pulse test
VGS = 20V
15V
10V
8V
6V
ID, Drain Current[A]
V
DS
, Drain-Source Voltage[V]
0 5 10 15 20 25 30 35
0
100
200
300
400
TC = 25°C
TC = 125°C
* Notes:
1. with an inductive load
2. VDS = 380 V, ID = 27 A
3. VGS = 10 V
4. Rg(on) = 51 Ω
Eoff, Turn-off Loss [uJ]
Rg(off), Off Resistance [Ω]
1E-5 1E-4 1E-3 0.01 0.1 1
1E-4
1E-3
0.01
0.1
1
ZθJC(t), Thermal Response [°C/W]
t1, Rectangular Pulse Duration [sec]
PDM
t1
t2
* Notes :
1. ZθJC(t) = 0.5 °C/W Max.
2. Duty Factor, D = t1/t2
3. TJ - TC = PDM*ZθJC(t)
0.5
0.3
0.1
0.05
0.02
0.01
0.005
Single Pulse
0 25 50 75 100 125 150
0.2
1
10
50
RNTC, NTC Resistance [kΩ]
TC, Case Temperature [°C]
Typical Performance Characteristic (Continued)
©2014 Fairchild Semiconductor Corporation 6www.fairchildsemi.com
FPF1C2P5BF07A Rev. C2
FPF1C2P5BF07A F1 Module solution for PV-Application
Internal Circuit Diagram
Package Outlines [mm]
G2
S2
DC+ DC+
G4
S4
S5
G5
G1
S1
G3
S3
RTNRTN
T1
T2
OUT1
OUT1
OUT2
OUT2
OUT3
OUT3
M2 M4
M5
M1 M3
©2014 Fairchild Semiconductor Corporation 7www.fairchildsemi.com
FPF1C2P5BF07A Rev. C2
FPF1C2P5BF07A F1 Module solution for PV-Application
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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