
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGA16N60B2
IXGP16N60B2
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
TO-263 (IXGA) Outline
Pins: 1 - Gate 2 - Drain
TO-220 (IXGP) Outline
1 = Gate
2 = Collector
3 = Emitter
4 = Collector
1 = Gate 2 = Collector
3 = Emitter
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs IC = 12A, VCE = 10V, Note 1 8 S
Cies 675 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 60 pF
Cres 20 pF
Qg(on) 24 nC
Qge IC = 12A, VGE = 15V, VCE = 0.5 • VCES 5 nC
Qgc 13 nC
td(on) 18 ns
tri 20 ns
Eon 0.16 mJ
td(off) 73 ns
tfi 70 ns
Eoff 0.12 0.22 mJ
td(on) 17 ns
tri 20 ns
Eon 0.26 mJ
td(off) 140 ns
tfi 125 ns
Eoff 0.38 mJ
RthJC 0.83 °C/W
RthCK TO-220 0.50 °C/W
Inductive load, TJ = 125°C
IC = 12A, VGE = 15V
VCE = 400V, RG = 22Ω
Note 2
Inductive load, TJ = 25°C
IC = 12A, VGE = 15V
VCE = 400V, RG = 22Ω
Note 2