© 2013 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VCES TJ = 25°C to 150°C 600 V
VCGR TJ = 25°C to 150°C, RGE = 1MΩ600 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC = 25°C (Chip Capability) 40 A
IC110 TC = 110°C16 A
ICM TC = 25°C, 1ms 100 A
SSOA VGE = 15V, TJ = 125°C, RG = 22Ω ICM = 32 A
(RBSOA) Clamped Inductive load VCE
VCES
PCTC = 25°C 150 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
MdMounting Torque (TO-220) 1.13/10 Nm/lb.in.
FCMounting Force (TO-263) 10..65 / 2.2..14.6 N/lb.
TL Maximum Lead Temperature for Soldering 300 °C
TSOLD 1.6mm (0.062 in.) from Case for 10s 260 °C
Weight TO-263 2.5 g
TO-220 3.0 g
DS99141C(03/13)
HiPerFASTTM IGBTs
B2-Class High Speed
VCES = 600V
IC110 = 16A
VCE(sat)
1.95V
IXGA16N60B2
IXGP16N60B2
tfi(typ) = 70ns
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
VGE(th) IC= 250μA, VCE = VGE 3.0 5.5 V
ICES VCE = VCES,VGE = 0V 15 μA
TJ = 125°C 250 μA
IGES VCE = 0V, VGE = ±20V ±100 nA
VCE(sat) IC = 12A, VGE = 15V, Note1 1.95 V
TJ = 125°C 1.65 V
Features
zOptimized for Low Conduction and
Switching Losses
zSquare RBSOA
zInternational Standard Packages
Advantages
zHigh Power Density
zLow Gate Drive Requirement
Applications
zPower Inverters
zUPS
zMotor Drives
zSMPS
zPFC Circuits
zBattery Chargers
zWelding Machines
zLamp Ballasts
G = Gate C = Collector
E = Emitter Tab = Collector
TO-263 AA (IXGA)
GCE
TO-220AB (IXGP)
G
E
C (Tab)
C (Tab)
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGA16N60B2
IXGP16N60B2
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
TO-263 (IXGA) Outline
Pins: 1 - Gate 2 - Drain
TO-220 (IXGP) Outline
1 = Gate
2 = Collector
3 = Emitter
4 = Collector
1 = Gate 2 = Collector
3 = Emitter
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs IC = 12A, VCE = 10V, Note 1 8 S
Cies 675 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 60 pF
Cres 20 pF
Qg(on) 24 nC
Qge IC = 12A, VGE = 15V, VCE = 0.5 VCES 5 nC
Qgc 13 nC
td(on) 18 ns
tri 20 ns
Eon 0.16 mJ
td(off) 73 ns
tfi 70 ns
Eoff 0.12 0.22 mJ
td(on) 17 ns
tri 20 ns
Eon 0.26 mJ
td(off) 140 ns
tfi 125 ns
Eoff 0.38 mJ
RthJC 0.83 °C/W
RthCK TO-220 0.50 °C/W
Inductive load, TJ = 125°C
IC = 12A, VGE = 15V
VCE = 400V, RG = 22Ω
Note 2
Inductive load, TJ = 25°C
IC = 12A, VGE = 15V
VCE = 400V, RG = 22Ω
Note 2
© 2013 IXYS CORPORATION, All Rights Reserved
IXGA16N60B2
IXGP16N60B2
Fi g . 1. Ou tpu t C har ac ter i sti cs @ T
J
= 25ºC
0
4
8
12
16
20
24
00.511.522.53
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
12V
9V
8V
10V
7V
11V
Fi g . 2. Exte n d ed Ou tpu t Ch ar ac ter i sti cs @ T
J
= 25ºC
0
10
20
30
40
50
60
70
80
90
100
0 5 10 15 20 25 30
V
CE
- Volts
I
C
-
Amperes
V
GE
= 15V
8V
9V
11V
13V
12V
14V
10V
Fi g . 3. Ou tp ut C har act er i sti cs @ T
J
= 125º C
0
4
8
12
16
20
24
00.511.522.53
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
12V
9V
11V
8V
6V
10V
7V
Fig. 4. Dependence of V
CE(sat)
on
Junction T emperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 12A
I
C
= 6A
I
C
= 24A
Fi g . 5. C o l l ector -to -E mi tt er Vo l tag e vs.
Gate-to -Emitter Vo l tage
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
8 9 10 11 12 13 14 15
V
GE
- Volts
V
CE
- Volts
I
C
= 24
A
T
J
= 25ºC
12
A
6
A
Fig. 6. Input Admittance
0
5
10
15
20
25
30
35
456789101112
V
GE
- Volts
I
C
-
Amperes
T
J
= 125ºC
25ºC
- 40ºC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGA16N60B2
IXGP16N60B2
Fig. 7. Transconductance
0
2
4
6
8
10
12
14
16
18
0 5 10 15 20 25 30 35
IC - Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fi g . 10. Rever se-B ias Safe Op er ati ng Area
0
5
10
15
20
25
30
35
100 150 200 250 300 350 400 450 500 550 600 650
VCE - Volts
IC - Amperes
T
J
= 125ºC
R
G
= 22
dv / dt < 10V / ns
Fi g . 11. Maximum Tr ansi en t Thermal I mped an ce
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z(th)JC - ºC / W
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 5 10 15 20 25
QG - NanoCoulombs
VGE - Volts
V
CE
= 300V
I
C
= 12A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
VCE - Volts
Capacitance - PicoFarads
f
= 1 MHz
Cies
Coes
Cres
© 2013 IXYS CORPORATION, All Rights Reserved
IXGA16N60B2
IXGP16N60B2
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
20 30 40 50 60 70 80 90 100
R
G
- Ohms
Eoff - MilliJoules
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
Eon - MilliJoules
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 400V
I
C
= 12A
I
C
= 24A
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
100
110
120
130
140
150
160
170
180
190
20 30 40 50 60 70 80 90 100
R
G
- Ohms
t f i - Nanoseconds
60
90
120
150
180
210
240
270
300
330
t d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 400V
I
C
= 24A
I
C
= 12A
Fig . 13. In d u ctive Switchi ng En erg y Lo ss vs.
Collector Current
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
12 13 14 15 16 17 18 19 20 21 22 23 24
I
C
- Amperes
Eoff - MilliJoules
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Eon - MilliJoules
E
off
E
on
- - - -
R
G
= 22
,
V
GE
= 15V
V
CE
= 400V
T
J
= 125ºC
T
J
= 25ºC
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
off
- MilliJoules
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 22
,
V
GE
= 15V
V
CE
= 400V
I
C
= 12A
I
C
= 24A
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
40
60
80
100
120
140
160
180
200
12 13 14 15 16 17 18 19 20 21 22 23 24
I
C
- Amperes
t
f i - Nanoseconds
40
60
80
100
120
140
160
180
200
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 22
, V
GE
= 15V
V
CE
= 400V
T
J
= 125ºC
T
J
= 25ºC
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
40
60
80
100
120
140
160
180
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f i - Nanoseconds
40
60
80
100
120
140
160
180
t
d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 22
, V
GE
= 15V
V
CE
= 400V
I
C
= 24A, 12A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGA16N60B2
IXGP16N60B2
IXYS REF: IXG_16N60B2D1(3D)8-02-10
Fig. 19. Inductive Turn-on Switching Ti mes vs.
Collector Current
15
20
25
30
35
40
45
50
55
12 13 14 15 16 17 18 19 20 21 22 23 24
I
C
- Amperes
t
r i
- Nanoseconds
15
16
17
18
19
20
21
22
23
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 22
, V
GE
= 15V
V
CE
= 400V
T
J
= 25ºC, 125ºC
Fig. 20. Inductive T urn-on Switching Times vs.
Jun c ti o n Temp eratu re
10
15
20
25
30
35
40
45
50
55
60
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r i
- Nanoseconds
14
15
16
17
18
19
20
21
22
23
24
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 22
, V
GE
= 15V
V
CE
= 400V
I
C
= 24A
I
C
= 12A
Fi g . 18. In d u ct i ve Tu rn-o n Sw i tch i ng Ti mes vs.
Gate R esi stan ce
0
10
20
30
40
50
60
70
80
90
20 30 40 50 60 70 80 90 100
R
G
- Ohms
t
r i
- Nanoseconds
10
15
20
25
30
35
40
45
50
55
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 400V
I
C
= 12A
I
C
= 24A