SuperSOT SOT23 NPN SILICON POWER (SWITCHING) TRANSISTORS FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 ISSUE 3 - NOVEMBER 1995 FEATURES * 625mW POWER DISSIPATION * * * * * IC CONT 3A 12A Peak Pulse Current Excellent HFE Characteristics Up To 12A (pulsed) Extremely Low Saturation Voltage E.g. 8mV Typ. Extremely Low Equivalent On Resistance; RCE(sat) E C B DEVICE TYPE COMPLEMENT PARTMARKING RCE(sat) FMMT617 FMMT717 617 50m at 3A FMMT618 FMMT718 618 50m at 2A FMMT619 FMMT720 619 75m at 2A FMMT624 FMMT723 624 - FMMT625 625 - ABSOLUTE MAXIMUM RATINGS. FMMT FMMT FMMT FMMT FMMT 617 618 619 624 625 PARAMETER SYMBOL Collector-Base Voltage VCBO 15 20 50 125 150 V Collector-Emitter Voltage VCEO 15 20 50 125 150 V Emitter-Base Voltage VEBO 5 5 5 5 5 V Peak Pulse Current** ICM 12 6 6 3 3 A Continuous Collector Current IC 3 2.5 2 1 1 A Base Current IB 500 mA Power Dissipation at Tamb=25C* Ptot 625 mW -55 to +150 C Operating and Storage Temperature Tj:Tstg Range UNIT * Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15x15x0.6mm **Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for these devices 3 - 149 FMMT624 FMMT625 FMMT619 TYPICAL CHARACTERISTICS 1 +25C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). IC/IB=40 0.6 100m 100C 0.4 25C -55C 10m IC/IB=100 0.2 IC/IB=50 IC/IB=10 1m 1m 10m 100m 1 0.0 10 10mA 1mA IC - Collector Current (A) 100C 10A VCE(SAT) vs IC 1.2 VCE=2V IC/IB=40 25C 0.8 0.8 225 -55C 25C 100C 0.4 0.2 0.2 0.0 1mA 10mA 100mA 0 10A 1A 0.0 1mA 10mA Collector Current 100mA 1A 10A Collector Current HFE vs IC VBE(SAT) vs IC 10 SINGLE PULSE TEST Tamb = 25 deg C 1.0 VCE =2V 0.8 0.6 0.4 Collector-Base Breakdown Voltage FMMT624 -55C 1.0 100C 0.1 MAX. MIN. V(BR)CBO 125 250 150 300 V IC=100A Collector-Emitter Breakdown Voltage V(BR)CEO 125 160 150 175 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 8.3 5 8.3 V IE=100A Collector Cut-Off Current ICBO 100 100 nA nA VCB=100V VCB=130V Emitter Cut-Off Current IEBO 100 100 nA VEB=4V Collector Emitter Cut-Off Current ICES 100 100 nA nA VCES=100V VCES=130V Collector-Emitter Saturation Voltage VCE(SAT) IC=0.1A, IB=10mA* IC=0.1A, IB=1mA* IC=0.5A, IB=50mA* IC=0.5A, IB=10mA* IC=1A, IB=50mA* 26 50 70 160 165 150 220 250 10mA 100mA 1A 0.01 10A Collector Current 180 300 mV mV mV mV mV 1.0 0.85 1.0 V IC=1A, IB=50mA* Base-Emitter Turn-On Voltage VBE(ON) 0.7 1.0 0.74 1.0 V IC=1A, VCE=10V* Static Forward Current Transfer Ratio hFE 200 300 100 400 450 140 18 200 300 30 400 450 45 15 Transition Frequency fT 100 155 100 135 Output Capacitance COBO 7 Turn-On Time t(ON) 60 Turn-Off Time t(OFF) 1300 15 1 10 100 Safe Operating Area 3 - 154 50 200 0.85 VCE (VOLTS) VBE(ON) vs IC 26 110 VBE(SAT) 100ms 10ms 1ms 100s 0.1 MAX. Base-Emitter Saturation Voltage 0.2 0.0 1mA TYP. UNIT CONDITIONS. TYP. IC=10mA, VCE=10V* IC=0.2A, VCE=10V* IC=1A, VCE=10V* IC=3A, VCE=10V* MHz IC=50mA, VCE=10V f=100MHz pF VCB=10V, f=1MHz 160 ns 1500 ns VCC=50V, IC=0.5A IB1=-IB2=50mA 6 10 *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% D.C. 1s 25C FMMT625 MIN. -55C 0.6 0.4 SYMBOL 1.0 450 1.0 0.6 1A Collector Current VCE(sat) v IC 1.2 100mA PARAMETER 3 - 155 FMMT624 FMMT625 TYPICAL CHARACTERISTICS IC/I B=20 25 C 0.5 0.4 0.3 IC/IB =50 IC/IB =20 0.5 0.5 0.4 0.4 0.3 0.3 100C IC/IB =10 0.2 0.2 0.1 0.1 0.0 0.0 1mA 10mA 100mA 1A 10A -55C 1mA 1.0 0.8 100mA 1A -55C 1.2 25C 1.0 100C 0.8 0.4 225 -55C 100C IC/IB=10 10mA 100mA 1A 10A 1mA 1.2 10mA 100mA 1A 0.0 10A 1mA 10mA 100mA 1A Collector Current hFE vs IC VBE(SAT) vs IC 10A 1A 10A 1A 10A 1.0 VCE=10V 100C IC /IB =20 450 -55C 0.8 25C 25C 0.6 225 100C 0.4 0.2 0.0 1mA 10mA 100mA 0.0 1mA 10A 1A 10mA Collector Current 100mA Collector Current hFE vs IC VBE(SAT) vs IC 10 SINGLE PULSE TEST Tamb = 25 deg C SINGLE PULSE TEST Tamb = 25 deg C 10 VCE =10V VCE =10V 1.0 1.0 0.8 -55C 0.6 25C 1.0 0.8 0.6 100C 0.4 0.1 100ms 10ms 1ms 10mA 100mA 1A 10A Collector Current 0.01 1.0 D.C. 1s 100ms 10ms 100s 10 100 Safe Operating Area 3 - 156 0.1 0.2 VCE (VOLTS) VBE(ON) vs IC 1.0 25C 100C 0.2 1mA -55C 0.4 D.C. 1s 0.0 100mA VCE(SAT) vs IC 0.4 Collector Current 10mA Collector Current 0.2 0.0 0.0 1mA VCE(SAT) vs IC -55C 0.2 -55C Collector Current 0.6 0.2 25C 0.2 0.1 0.0 1mA 10A 0.6 25C 0.3 IC/IB=100 IC/IB=20 VCE =10V 0.6 0.4 10mA VCE(SAT) vs IC 450 0.4 0.1 VCE(SAT) vs IC 1.0 IC/IB=20 0.5 0.2 Collector Current 100C 25 C IC/IB=20 25C Collector Current 1.2 0.8 TYPICAL CHARACTERISTICS 1000 0.0 1mA 10mA 100mA 1A 10A Collector Current 0.01 1ms 100s 1 10 100 VCE (VOLTS) VBE(ON) vs IC Safe Operating Area 3 - 157 1000 FMMT617 FMMT624 FMMT618 FMMT625 FMMT619 SuperSOT Series FMMT717 FMMT722 FMMT718 FMMT723 FMMT720 THERMAL CHARACTERISTICS AND DERATING INFORMATION DERATING CURVE MAXIMUM TRANSIENT THERMAL RESISTANCE * Reference above figures, Devices were mounted on a 15mmx15mm ceramic substrate 3 - 158