SuperSOT
SOT23 NPN SILICON POWER
(SWITCHING) TRANSISTORS
ISSUE 3 - NOVEMBER 1995
FEATURES
* 625mW POWER DISSIPATION
*I
C CONT 3A
* 12A Peak Pulse Current
* Excellent HFE Characteristics Up To 12A (pulsed)
* Extremely Low Saturation Voltage E.g. 8mV Typ.
* Extremely Low Equivalent On Resistance; RCE(sat)
DEVICE TYPE COMPLEMENT PARTMARKING RCE(sat)
FMMT617 FMMT717 617 50mΩ at 3A
FMMT618 FMMT718 618 50mΩ at 2A
FMMT619 FMMT720 619 75mΩ at 2A
FMMT624 FMMT723 624 -
FMMT625 625 -
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL
FMMT
617
FMMT
618
FMMT
619
FMMT
624
FMMT
625 UNIT
Collector-Base Voltage VCBO 15 20 50 125 150 V
Collector-Emitter Voltage VCEO 15 20 50 125 150 V
Emitter-Base Voltage VEBO 55555V
Peak Pulse Current** ICM 126633A
Continuous Collector Current IC32.5211A
Base Current IB500 mA
Power Dissipation at Tamb
=25°C* Ptot 625 mW
Operating and Storage Temperature
Range
Tj:Tstg -55 to +150 °C
* Maximum power dissipation is calculated assuming that the device is mounted on a ceramic
substrate measuring 15x15x0.6mm
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for these devices
C
B
E
FMMT617 FMMT618
FMMT619 FMMT624
FMMT625
3 - 149
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Collector Current
I
C
/I
B
=40
Collector Current
10A
Collector Current
Collector Current
0.0
I
C
/I
B
=40
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
CE
=2V
0
450
225
V
CE
=2V
0.2
0.0
1.0
0.8
0.6
0.4
10
1.0
0.1
0.01
SINGLE PULSE TEST T
amb
= 25 deg C
VCE (VOLTS)
TYPICAL CHARACTERISTICS
0.2
0.4
0.6
-55°C
100°C
25°C
25°C
100°C
-55°C
25°C
100°C
-55°C
25°C
100°C
-55°C D.C.1s
100ms
10ms
1ms
100
µ
s
0.1
10A1mA
10A1mA
10A1mA
10A1mA
Safe Operating Area
1
100m
10m
1m
1m 10m 100m 1 10
IC - Collector Current (A)
VCE(sat) v IC
I
C
/I
B
=10
I
C
/I
B
=50
I
C
/I
B
=100
+25°C
VCE(SAT) vs IC
VBE(SAT) vs IC
HFE vs IC
VBE(ON) vs IC
10mA 100mA 1A
10mA 100mA 1A
10mA 100mA 1A
10mA 100mA 1A 110100
FMMT619
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL
FMMT624 FMMT625
UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
125 250 150 300 V I
C
=100µA
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
125 160 150 175 V I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
58.3 58.3 V
I
E
=100µA
Collector Cut-Off
Current
I
CBO
100
100
nA
nA
V
CB
=100V
V
CB
=130V
Emitter Cut-Off
Current
I
EBO
100 100 nA V
EB
=4V
Collector Emitter
Cut-Off Current
I
CES
100
100
nA
nA
V
CES
=100V
V
CES
=130V
Collector-Emitter
Saturation Voltage
V
CE(SAT)
26
70
160
165
50
150
220
250
26
110
180
50
200
300
mV
mV
mV
mV
mV
I
C
=0.1A, I
B
=10mA*
I
C
=0.1A, I
B
=1mA*
I
C
=0.5A, I
B
=50mA*
I
C
=0.5A, I
B
=10mA*
I
C
=1A, I
B
=50mA*
Base-Emitter
Saturation Voltage
V
BE(SAT)
0.85 1.0 0.85 1.0 V I
C
=1A, I
B
=50mA*
Base-Emitter
Turn-On Voltage
V
BE(ON)
0.7 1.0 0.74 1.0 V I
C
=1A, V
CE
=10V*
Static Forward
Current Transfer
Ratio
h
FE
200
300
100
400
450
140
18
200
300
30
400
450
45
15
I
C
=10mA, V
CE
=10V*
I
C
=0.2A, V
CE
=10V*
I
C
=1A, V
CE
=10V*
I
C
=3A, V
CE
=10V*
Transition
Frequency
f
T
100 155 100 135 MHz I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance C
OBO
715 6 10 pF V
CB
=10V, f=1MHz
Turn-On Time t
(ON)
60 160 ns V
CC
=50V, I
C
=0.5A
I
B1
=-I
B2
=50mA
Turn-Off Time t
(OFF)
1300 1500 ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
FMMT624
FMMT625
3 - 154 3 - 155
0.0
0.2
0.4
0.6
0.8
1.0
Collector Current
I
C
/I
B
=20
Collector Current Collector Current
Collector Current
Collector Current
I
C
/I
B
=10
I
C
/I
B
=20
I
C
/I
B
=100
25 °C I
C
/I
B
=20
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
CE
=10V
450
225
V
CE
=10V
0.2
0.0
1.0
0.8
0.6
0.4
10
1.0
0.1
0.01
SINGLE PULSE TEST T
amb
= 25 deg C
VCE (VOLTS)
TYPICAL CHARACTERISTICS
0.4
0.3
0.2
0.1
0.0
0.5
0.1
0.0
0.3
0.2
0.5
0.4
-55°C
100°C
25°C
25°C
100°C
-55°C
25°C
100°C
-55°C
25°C
100°C
-55°C
D.C.1s
100ms
10ms
1ms
100
µ
s
1mA 10A
1
10A1mA
10A1mA
10A1mA
10A1mA
Safe Operating Area
10mA 100mA 1A
VCE(SAT) vs IC
10mA 100mA 1A
VCE(SAT) vs IC
10mA 100mA 1A
VBE(SAT) vs IC
10mA 100mA 1A
hFE vs IC
10mA 100mA 1A
VBE(ON) vs IC
10 100 1000
FMMT625
0.0
0.2
0.4
0.6
0.8
1.0
Collector Current
I
C
/I
B
=20
Collector Current
10A
Collector Current
10A
Collector Current
10A
Collector Current
10A
I
C
/I
B
=10
I
C
/I
B
=20
I
C
/I
B
=50
25 °C I
C
/I
B
=20
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
CE
=10V
450
225
V
CE
=10V
0.2
0.0
1.0
0.8
0.6
0.4
10
1.0
0.1
0.01
SINGLE PULSE TEST T
amb
= 25 deg C
VCE (VOLTS)
TYPICAL CHARACTERISTICS
1.2
-55°C
100°C
25°C
25°C
100°C
-55°C
25° C
100°C
-55°C
25°C
100°C
-55°C
D.C.1s
100ms
10ms
1ms
100
µ
s
1mA
1.0
1mA
10A1mA
1mA
10A1mA
0.0
0.1
0.2
0.3
0.4
0.5
0.1
0.0
0.2
0.3
0.4
0.5
Safe Operating Area
VCE(SAT) vs ICVCE(SAT) vs IC
VBE(SAT) vs IC
hFE vs IC
VBE(ON) vs IC
10 100 1000
10mA 100mA 1A 10mA 100mA 1A
10mA 100mA 1A
10mA 100mA 1A
10mA 100mA 1A
FMMT624
3 - 156 3 - 157
DERATING CURVE
* Reference above figures, Devices were mounted on a 15mmx15mm ceramic substrate
MAXIMUM TRANSIENT THERMAL RESISTANCE
FMMT617 FMMT624
FMMT618 FMMT625
FMMT619
THERMAL CHARACTERISTICS AND DERATING INFORMATION
FMMT717 FMMT722
FMMT718 FMMT723
FMMT720
SuperSOT Series
3 - 158
