ES3AB thru ES3GB
FEATURES
Glass passivated chip
Super fast switching for high efficiency
For surface mounted applications
Low forward voltage drop and high current capability
Low reverse leakage current
Plastic ma t eri al has UL flammability clas sification
94V-0
MECHANICAL DATA
Case : Molded plastic
Polarity : Color band denotes cathode
Weight : 0.003 ounces, 0.093 grams
SMB
All Dimen sio ns in m illime te r
SMB
DIM. MIN. MAX.
A
C
D
E
F
G
H
B 4.06 4.57
3.94 3.3 0
1.9 6 2.21
0.31 0.1 5
5.21 5.59
0.05 0.20
2.01 2.62
0.76 1.52
C
B
A
HEF
GD
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
V
F
I
R
Maximum Av erage Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC METHOD)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maxim um DC Blocking Voltage
Maxim um forward Voltage at 3.0A DC
Maximum DC Re verse Current
at Rated DC Blocking Voltage
@T
J
=125 C
@T
J
=25 C
3.0
100
10
500
T
J
Operating Temperature Range
-55 to +150 C
T
STG
Storage Tem perature Range
-55 to +150 C
Typical Thermal Resistance (Note 3)
R
0JL
10
C/W
C
J
Typical Junction Capacitance (Note 2)
45
pF
uA
V
A
A
V
UNIT
V
V
CHARACTERISTICS SYMBOL
@T
L
=100 C
50
35
50
ES3AB
200
140
200
ES3DB
150
105
150
ES3CB
100
70
100
ES3BB
Maxim um Reverse Recovery T im e (Note 1)
T
RR
25
ns
NOTES : 1. Reverse Recovery Test Conditions :I
F
=0.5A,I
R
=1.0A,I
RR
=0.25A.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Therm al Resistance junction to Lead
4. Therm al Resistance junction to Ambient
Typical Thermal Resistance (Note 4)
R
0JA
50
C/W
SURFACE MOUNT
SUPER FA ST RECT IFIERS
REVERSE VOL TAGE -
50
to
400
Volts
FOR WARD CURRENT -
3.0
Amperes
0.92 1.25
400
280
400
ES3GB
MAXIMUM RATINGS AND ELECTRICA L CHARACTERISTICS
Ratings at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
SEMICONDUCTOR
LITE-ON
REV. 2, 01-Dec-2000, KSGB02