Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 1 of 9 April 2006
ECP203
2 Watt, High Linearity InGaP HBT Amplifier Product Information
The Communications Ed
g
e TM
Product Features
• 2300 – 2700 MHz
• +32 dBm P1dB
• +46 dBm Output IP3
• 10 dB Gain @ 2450 MHz
• 9.5 dB Gain @ 2650 M Hz
• Single Positive Supply (+5V)
• Lead-free/Green/RoHS-compliant
SOIC-8 and 16pin 4mm QFN
packages
Applications
• W-LAN / Wi-B ro
• RFID
• DMB
• Fixed Wireless
Product Description
The ECP203 is a high dynamic range driver amplifier in
a low-cost surface mount package. The InGaP/GaAs
HBT is able to achieve high performance for various
narrowband-tuned application circuits with up to +46
dBm OIP3 and +32 dBm of compressed 1dB power. It
is housed in Lead-free/Green/RoHS-compliant SOIC-8
and 16-pin 4x4mm QFN packages. All devices are
100% RF and DC tested.
The ECP203 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. An internal active bias allows the
ECP203 to maintain high linearity over temperature and
operate directly off a single +5V supply. This
combination makes the device an excellent candidate for
driver amplifier stages in wireless-LAN, digital
multimedia broadcast, or fixed wireless applications.
The device can also be used in next generation RFID
readers.
Functional Diagram
ECP203D
ECP203G
Specifications (1)
Parameter Units Min Typ Max
Operational Bandwidth MHz 2300 2700
Test Frequency MHz 2450
Gain dB 9 10
Input Return Loss dB 8.5
Output Return Loss dB 8.5
Output P1dB dBm +31 +32
Output IP3 (2) dBm +46
Noise Figure dB 6.3
Test Frequency MHz 2650
Gain dB 9.5
Output P1dB dBm +32
Output IP3 (2) dBm +46
Operating Current Range, Icc (3) mA 700 800 900
Device Voltage, Vcc V +5
1. Test conditions unless otherwise noted: 25 ºC, Vsupply = +5 V in tuned application circuit.
2. 3OIP measured with two tones at an output power of +17 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions into
the Vbias and RF out pins. It is expected that the current can increase by an additional 200 mA
at P1dB. Pin 1 is used as a reference voltage for the internal biasing circuitry. It is expected that
Pin 1 will pull 22mA of current when used with a series bias resistor of R1=15Ω. (ie. total
device current typically will be 822 mA.)
Absolute Maximum Rating
Parameter Rating
Operating Case Temperature -40 to +85 °C
Storage Temperature -65 to +125 °C
RF Input Power (continuous) +28 dBm
Device Voltage +8 V
Device Current 1400 mA
Device Power 8 W
Junction Temperature +250 °C
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance (4)
Parameter Units Typical
Frequency MHz 2350 2450 2650
S21 – Gain dB 10 10 9.5
S11 dB -8 -8.5 -19.5
S22 dB -15.5 -8.5 -11.5
Output P1dB dBm +32 +32 +32
Output IP3 dBm +47 +46 +46
Noise Figure dB 6.3 6.3 6.3
Supply Bias (3) +5 V @ 800 mA
4. Typical parameters reflect performance in a tuned application circuit at +25 °C.
Ordering Information
Part No. Description
ECP203D-G 2 Watt InGaP HBT Am plifier
(lead-free/green/RoHS-compliant 16-pin 4x4mm QFN Package)
ECP203G-G 2 Watt InGaP HBT Am plifier
(lead-free/green/RoHS-compliant SOIC-8 Package)
ECP203D-PCB2450 2450 MHz Evaluation Board
ECP203D-PCB2650 2650 MHz Evaluation Board
ECP203G-PCB2450 2450 MHz Evaluation Board
ECP203G-PCB2650 2650 MHz Evaluation Board
1
2
3
4
8
7
6
5
Vre
f
GND
RF IN
GND
Vbias
RF OUT
RF OUT
GND
1
2
3
4
12
11
10
9
16 15 14 13
5 6 7 8
Gnd
RF OUT
RF OUT
Gnd
Vre
f
Gnd
RF IN
Gnd
Vbias
Gnd
Gnd
Gnd
Gnd
Gnd
Gnd
Gnd
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 2 of 9 April 2006
ECP203
2 Watt, High Linearity InGaP HBT Amplifier Product Information
The Communications Ed
g
e TM
Typical Device Data (QFN 4 X 4)
S-Parameters (VCC = +5 V, ICC = 800 mA, T = 25 °C, unmatched 50 ohm system)
2 2.2 2.4 2.6 2.8 3
Frequency (GHz)
Gai n / Max imum Sta ble Gain
0
5
10
15
20
Gai n (d B)
DB(|S(2,1)|) DB(GMax())
0
1.0 1.0-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
S11 Sw p Ma x
3GHz
Sw p M in
2GHz
0
1.0 1.0-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
S22 Swp Max
3GHz
Sw p Min
2GHz
Notes:
The gain for the unmatched device in 50 Ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency,
it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line.
The impedance plots are shown from 2 – 3 GHz, with markers placed at 2.0 – 3.0 GHz in 0.1 GHz increments.
S-Parameters (VCC = +5 V, ICC = 800 mA, T = 25 °C, unmatched 50 ohm system, calibra ted to device leads)
Freq (GHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (a ng) S22 (dB) S22 (ang)
2 -3.47 119.00 1.66 16.07 -40.39 -44.75 -0.90 167.78
2.1 -4.38 113.65 1.77 8.68 -39.83 -56.07 -0.73 166.99
2.2 -5.64 109.11 2.08 -0.45 -39.08 -62.38 -0.77 164.76
2.3 -7.46 105.86 2.29 -10.35 -37.86 -88.93 -0.81 164.27
2.4 -10.26 107.44 2.21 -22.19 -37.62 -82.33 -0.92 162.74
2.5 -13.43 125.78 2.04 -33.19 -37.98 -95.60 -0.74 161.75
2.6 -13.11 162.69 1.80 -47.53 -37.98 -119.59 -0.80 159.67
2.7 -9.53 177.72 1.22 -60.84 -38.05 -150.04 -0.70 158.22
2.8 -6.50 178.14 0.07 -74.55 -39.73 -156.73 -0.70 155.86
2.9 -4.64 171.86 -1.09 -85.18 -37.86 -161.71 -0.75 153.95
3 -3.34 164.77 -2.28 -96.66 -38.71 -166.97 -0.78 153.25
Application Circuit PC Board Layout
Circuit Board Material: .014” Getek, single layer, 1 oz copper, Microstrip line details: width = .026”, spacing = .026”
The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning
shunt capacitors – C8 and C9. The markers and vias are spaced in .050” increments.
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 3 of 9 April 2006
ECP203
2 Watt, High Linearity InGaP HBT Amplifier Product Information
The Communications Ed
g
e TM
2350 MHz Reference Design
Typical RF Performance at 25 °C
Frequency 2350 MHz
S21 – Gain 9.8 dB
S11 – Input Return Loss -8.5 dB
S22 – Output Return Loss -12 dB
Output P1dB +32 dBm
Output IP3
(+17 dBm / tone, 1 MHz spacing) +47 dBm
Noise Figure 6.3 dB
Device / Supply Voltage +5 V
Quiescent Current (1) 800 mA
1. This corresponds to the quiescent current or operating current under
small-signal conditions into pins 10, 11, and 16.
CAP
ID=C1
C=56 pF
CAP
ID=C2
C=56 pF
CAP
ID=C3
C=56 pF
CAP
ID=C4
C=100 00000 pF
CAP
ID=C5
C=1000 pF
CAP
ID=C6
C=10 pF
CAP
ID=C7
C=1000 pF
CAP
ID=C8
C=.5 pF
CAP
ID=C9
C= 2. 7 p F
TLINP
ID=FR4
Z0=50 Ohm
L=75 mil
Eeff=3.16
Loss=0
F0=0 MHz
TLINP
ID=FR1
Z0=50 Ohm
L=25 mil
Eeff=3.16
Loss=0
F0=0 MHz
RES
ID=R1
R=15 Ohm
RES
ID=R2
R=22 Ohm
IND
ID=L1
L=18 nH
RES
ID=R3
R=51 Ohm
TLINP
ID=FR2
Z0=50 Ohm
L=425 mil
Eeff=3.16
Los s=0
F0=0 MHz
RES
ID=C11
R=0 Ohm
1
2
3
4
5678
9
10
11
12
13 14 15 16
SUBCKT
ID=ECP203D
NET="QFN"
PORT
P=1
Z=50 Ohm
PORT
P=2
Z=50 Ohm
on the WJ evaluation board as shown.
This component should be placed at silk screen marker "A"
edge of the ECP203D pins to the center of the component.
·The transmission line length are from the
evaluation board as shown.
silk screen marker "2" on the WJ
This component shou ld be placed at
+5 V
All passive components are of size 0603 unless otherwise noted.
size 1008
+5.6 V zener
ECP203D 2.3 - 2.4GHz
-25
-20
-15
-10
-5
0
2.25 2.30 2.35 2.40 2.45
Frequency (GHz)
S11 & S22 (dB)
7
8
9
10
11
12
Gain (dB)
S11 S22 S21
ECP203D 2.3 - 2.4GHz
44
45
46
47
48
2.25 2.3 2.35 2.4 2.45
Frequency (GHz)
OIP3 (dBm)
30
31
32
33
34
P1dB (dBm)
OIP3 P1dB
2450 MHz Application Circuit (ECP203D-PCB2450)
Typical RF Performance at 25 °C
Frequency 2450 MHz
S21 – Gain 10.4 dB
S11 – Input Return Loss -12.5 dB
S22 – Output Return Loss -12.5 dB
Output P1dB +32 dBm
Output IP3
(+17 dBm / tone, 1 MHz spacing) +46 dBm
Noise Figure 6.3 dB
Device / Supply Voltage +5 V
Quiescent Current (1) 800 mA
1. This corresponds to the quiescent current or operating current under
small-signal conditions into pins 10, 11, and 16.
CAP
ID=C1
C=56 pF
CAP
ID=C2
C=56 pF
CAP
ID=C3
C=56 pF
CAP
ID=C4
C=10000000 pF
CAP
ID=C5
C=1000 pF
CAP
ID= C6
C=10 pF
CAP
ID=C7
C=1000 pF
CAP
ID=C8
C=.5 pF
CAP
ID=C9
C=2.2 pF
TLINP
ID=FR4
Z0=50 Ohm
L=125 m il
Eeff=3.16
Loss=0
F0=0 MHz
TLINP
ID=FR1
Z0=50 Ohm
L=25 mil
Eeff=3.16
Loss=0
F0=0 MHz
RES
ID=R1
R=15 Ohm
RES
ID=R2
R=22 Ohm
IND
ID=L1
L=18 nH
RES
ID=R3
R=51 Ohm
TLINP
ID=FR2
Z0=50 Ohm
L=425 m il
Eeff=3.16
Los s=0
F0=0 MHz
RES
ID=C11
R=0 Ohm
1
2
3
4
5678
9
10
11
12
13 14 15 16
SUBCKT
ID=ECP203D
NET="QFN"
PORT
P=1
Z=50 Ohm
PORT
P=2
Z=50 Ohm
on the WJ evaluation board as shown.
This component should be placed at silk screen marker "A"
edge of the ECP203D pins to the center of the component.
·The transmission line length are from the
evaluation board as shown.
silk screen marker "3" on the WJ
This component should be placed at
+5 V
All passive components are of size 0603 unless otherwise noted.
size 1008
+5.6 V zener
ECP203D 2.4 - 2.5GHz
-25
-20
-15
-10
-5
0
2.35 2.40 2.45 2.50 2.55
Frequency (GHz)
S11 & S22 (dB)
7
8
9
10
11
12
Gain (dB)
S11 S22 S21
ECP203D 2.4 - 2.5GHz
43
44
45
46
47
2.35 2.4 2.45 2.5 2.55
Frequency (GHz)
OIP3 (dBm)
30
31
32
33
34
P1dB (dBm)
OIP3 P1dB
1
2
3
4
1
2
3
4
68 5 7
6 85 7
12
11
10
9
12
11
10
9
15
13 16
14
15 1316 14
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800- WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 4 of 9 April 2006
ECP203
2 Watt, High Linearity InGaP HBT Amplifier Product Information
The Communications Ed
g
e TM
2650 MHz Application Circuit (ECP203D-PCB2650)
Typical RF Performance at 25 °C
Frequency 2650 MHz
S21 – Gain 9.4 dB
S11 – Input Return Loss -29.5 dB
S22 – Output Return Loss -9.5 dB
Output P1dB +32 dBm
Output IP3
(+17 dBm / tone, 1 MHz spacing) +47 dBm
Noise Figure 6.3 dB
Device / Supply Voltage +5 V
Quiescent Current (1) 800 mA
1. This corresponds to the quiescent current or operating current under
small-signal conditions into pins 10, 11, and 16.
ECP203 2.6 - 2.7 GH z
-25
-20
-15
-10
-5
0
2.55 2.60 2.65 2.70 2.75
Frequency (GHz)
S11 & S22 (dB)
7
8
9
10
11
12
Gain (dB)
S11 S22 S21
ECP203D 2.6 - 2.7GHz
43
44
45
46
47
48
2.55 2.6 2.65 2.7 2.75
Frequency (GHz)
OIP3 (dBm)
29
30
31
32
33
34
P1dB (dBm)
OIP3 P1dB
CAP
ID= C 6
C=10 pF
CA P
ID= C2
C=56 pF
IND
ID=L1
L= 18 nH CA P
ID=C3
C=56 pF
TLINP
ID=TL1
Z0= 50 Ohm
L=75 mil
Eeff=3.16
Loss=0
F0= 0 GHz
RES
ID= C 11
R= 0 O h m
RES
ID=R3
R =51 O hm
CAP
ID=C1
C=56 pF
CAP
ID=C8
C=0.5 pF
TLINP
ID=TL2
Z0=50 Ohm
L=2 5 mil
Eeff=3.16
Loss =0
F0=0 GHz
CAP
ID=C9
C=2.4 pF
CAP
ID=C7
C=1000 pF
CAP
ID=C4
C=1 e7 pF
RES
ID=R1
R=15 Ohm
RES
ID=R2
R=22 Ohm
CAP
ID=C5
C=1000 pF
TLINP
ID=TL3
Z0=50 Ohm
L=425 m il
Eeff=3.16
Loss=0
F0=0 GHz
1
2
3
4
5678
9
10
11
12
13141516
SUBCKT
ID=ECP203
NET="QFN"
PORT
P=1
Z=50 Ohm
PORT
P=2
Z=50 Ohm
Vsupply = +5V
size 1008
The transmission line lengths are from the edge of the device
pins to the center of the component.
All passive components are size 0603 unless otherwise noted. C8 should be placed at silk screen marker "B"on the
WJ evaluation board as shown.
C9 should be placed at silk screen marker "2"on the WJ
evaluation board as shown.
+5.6V Ze ner
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800- WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 5 of 9 April 2006
ECP203
2 Watt, High Linearity InGaP HBT Amplifier Product Information
The Communications Ed
g
e TM
Typical Device Data (SOIC-8)
S-Parameters (VCC = +5 V, ICC = 800 mA, T = 25 °C, unmatched 50 ohm system)
2 2.2 2.4 2.6 2.8 3
Frequency (GHz)
Gain / Maximu m S table Gain
0
5
10
15
20
Gain (dB)
DB(|S(2,1)|) DB(GMax())
0
1.0 1.0-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
S11 Swp Max
3GHz
Swp Min
2GHz
0
1.0 1.0-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
S22 Swp Max
3GHz
Swp Min
2GHz
Notes:
The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency,
it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line.
The impedance plots are shown from 2 – 3 GHz, with markers placed at 2.0 – 3.0 GHz in 0.1 GHz increments.
S-Parameters (VCC = +5 V, ICC = 800 mA, T = 25 °C, unmatched 50 ohm system, calibra ted to device leads)
Freq (GHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (a ng) S22 (dB) S22 (ang)
2 -2.47 93.29 1.52 5.56 -39.87 -21.45 -0.85 157.53
2.1 -3.14 86.48 1.61 -0.62 -40.28 -38.37 -0.84 155.92
2.2 -3.99 79.50 2.06 -9.93 -38.75 -44.73 -0.77 153.69
2.3 -5.24 72.21 2.49 -19.19 -39.46 -56.18 -0.91 152.59
2.4 -7.30 64.82 2.73 -30.97 -38.17 -73.68 -0.92 151.15
2.5 -10.80 62.44 3.08 -43.75 -38.91 -95.46 -0.82 149.97
2.6 -16.44 84.08 3.15 -59.32 -40.42 -128.44 -0.74 147.33
2.7 -14.08 141.09 2.59 -75.76 -42.11 -144.07 -0.81 144.78
2.8 -8.78 147.95 1.74 -91.84 -43.40 165.97 -0.60 141.53
2.9 -5.67 140.30 0.69 -105.74 -41.99 148.86 -0.71 139.50
3 -3.92 130.41 -0.73 -118.98 -46.07 116.99 -0.71 136.89
Application Circuit PC Board Layout
Circuit Board Material: .014” Getek, single layer, 1 oz copper, Microstrip line details: width = .026”, spacing = .026”
The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning
shunt capacitors – C8 and C9. The markers and vias are spaced in .050” increments.
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800- WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 6 of 9 April 2006
ECP203
2 Watt, High Linearity InGaP HBT Amplifier Product Information
The Communications Ed
g
e TM
2350 MHz Reference Design
Typical RF Performance at 25 °C
Frequency 2350 MHz
S21 – Gain 10 dB
S11 – Input Return Loss -7.5 dB
S22 – Output Return Loss -15.5 dB
Output P1dB +32 dBm
Output IP3
(+17 dBm / tone, 1 MHz spacing) +47 dBm
Noise Figure 6.3 dB
Device / Supply Voltage +5 V
Quiescent Current (1) 800 mA
1. This corresponds to the quiescent current or operating current under
small-signal conditions into pins 6, 7, and 8.
CAP
ID=C1
C=56 pF
CAP
ID=C2
C=56 pF
CAP
ID=C3
C= 56 pF
CAP
ID=C4
C=10000000 pF
CAP
ID=C5
C=1000 pF
CAP
ID=C6
C=10 pF
CAP
ID=C7
C=1000 pF
CAP
ID=C8
C=1 pF
CAP
ID=C9
C=2.7 pF
TLINP
ID=FR4
Z0=50 Ohm
L=25 mil
Eeff=3.16
Loss=0
F0=0 M Hz
TLINP
ID=FR1
Z0 =50 Ohm
L=25 mil
Eeff=3.16
Loss=0
F0=0 MHz
RES
ID=R1
R=15 Ohm
RES
ID=R2
R=22 Ohm
IND
ID=L1
L=18 nH
RES
ID=R3
R=51 Ohm
TLINP
ID=FR2
Z0= 50 Ohm
L=425 mil
Eeff=3.16
Loss=0
F0= 0 MHz
RES
ID=C16
R=0 Ohm
1
2
3
4
5
6
7
8
SUBCKT
NET="ECP203G"
PORT
P=1
Z=50 Ohm
PORT
P=2
Z =50 Ohm
on the WJ evaluation board as shown.
T his component shoul d be placed at silk scre en ma rke r "A"
edge of the ECP203G pi ns to the center of the c om ponent.
·The transmission line length are from the
evaluation board as shown.
silk screen marker "1" on the WJ
Th is component shoul d be placed at
All passive com ponents are of siz e 0603 unless otherwi se noted.
size 1008
+5.6 V zener
ECP203G 2.3 - 2.4GHz
-25
-20
-15
-10
-5
0
2.25 2.30 2.35 2.40 2.45
Frequency (GHz)
S11 & S22 (dB)
7
8
9
10
11
12
Gain (dB)
S11 S22 S21
ECP203G 2.3 - 2.4GHz
43
44
45
46
47
48
2.25 2.3 2.35 2.4 2.45
Frequency (GHz)
OIP3 (dBm)
29
30
31
32
33
34
P1dB (dBm)
OIP3 P1dB
2450 MHz Application Circuit (ECP203G-PCB2450)
Typical RF Performance at 25 °C
Frequency 2450 MHz
S21 – Gain 10 dB
S11 – Input Return Loss -8.5 dB
S22 – Output Return Loss -8.5 dB
Output P1dB +32 dBm
Output IP3
(+17 dBm / tone, 1 MHz spacing) +46 dBm
Noise Figure 6.3 dB
Device / Supply Voltage +5 V
Quiescent Current (1) 800 mA
1. This corresponds to the quiescent current or operating current under
small-signal conditions into pins 6, 7, and 8.
CAP
ID=C1
C=56 pF
CAP
ID=C2
C=56 pF
CAP
ID=C3
C=56 pF
CAP
ID=C4
C=10000000 pF
CAP
ID=C5
C=1000 pF
CAP
ID=C6
C=10 pF
CAP
ID=C7
C=1000 pF
CAP
ID=C8
C=.5 pF
CAP
ID=C9
C=2 .2 pF
TLINP
ID=FR4
Z0=50 Ohm
L=75 mil
Eeff=3.16
Loss=0
F0=0 M Hz
TLINP
ID=FR1
Z0=50 Ohm
L=25 mil
Eeff=3.16
Loss=0
F0=0 M Hz
RES
ID=R1
R=15 Ohm
RES
ID=R2
R=22 Ohm
IND
ID=L1
L=18 nH
RES
ID=R3
R=51 Oh m
TLINP
ID=FR2
Z0=50 Ohm
L=425 mil
Eeff=3.16
Loss=0
F0= 0 MHz
RES
ID=C16
R=0 Ohm
1
2
3
4
5
6
7
8
SUBCKT
NET="ECP203G"
PORT
P=1
Z=50 Ohm
PORT
P=2
Z=50 Ohm
on the WJ evaluation board as shown.
This component should be placed at silk screen marker "A"edge of the ECP203G pins to the center of the component.
·The transmission line length are from the
evaluation board as shown.
silk screen marker "1" & "2" on the WJ
This component should be placed between
+5 V
All passive components are of size 0603 unless otherwise noted.
size 1008
+5.6 V zener
ECP203G 2.4 - 2.5GHz
-25
-20
-15
-10
-5
0
2.35 2.40 2.45 2.50 2.55
Frequency (GHz)
S11 & S22 (dB)
6
7
8
9
10
11
Gain (dB)
S11 S22 S21
ECP203G 2.4 - 2.5GHz
43
44
45
46
47
2.35 2.4 2.45 2.5 2.55
Frequency (GHz)
OIP3 (dBm)
29
30
31
32
33
P1dB (dBm)
OIP3 P1dB
1
2
3
4
1
2
3
8
5
7
6
6
8
5
7
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800- WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 7 of 9 April 2006
ECP203
2 Watt, High Linearity InGaP HBT Amplifier Product Information
The Communications Ed
g
e TM
2650 MHz Application Circuit (ECP203G-PCB2650)
Typical RF Performance at 25 °C
Frequency 2650 MHz
S21 – Gain 9.5 dB
S11 – Input Return Loss -19.5 dB
S22 – Output Return Loss -11.5 dB
Output P1dB +32 dBm
Output IP3
(+17 dBm / tone, 1 MHz spacing) +46 dBm
Noise Figure 6.3 dB
Device / Supply Voltage +5 V
Quiescent Current (1) 800 mA
1. This corresponds to the quiescent current or operating current under
small-signal conditions into pins 6, 7, and 8.
CAP
ID=C1
C=56 pF
CAP
ID=C2
C=56 pF
CAP
ID=C3
C=56 pF
CAP
ID=C4
C=10000000 pF
CAP
ID=C5
C=1000 pF
CAP
ID=C6
C=10 pF
CAP
ID=C7
C=1000 pF
CAP
ID=C8
C=.5 pF
CAP
ID=C9
C=2.2 pF
TLINP
ID=FR4
Z0=50 Ohm
L=13 mil
Eeff=3.16
Loss=0
F0=0 MHz
TLINP
ID=FR1
Z0=50 Ohm
L=25 mil
Eeff=3.16
Loss=0
F0=0 MHz
RES
ID=R1
R=15 Ohm
RES
ID=R2
R=22 Ohm
IND
ID=L1
L=18 nH
RES
ID=R3
R=51 Ohm
TLINP
ID=FR2
Z0=50 Ohm
L=425 mil
Eeff=3.16
Loss=0
F0= 0 MHz
RES
ID=C16
R=0 Ohm
1
2
3
4
5
6
7
8
SUBCKT
NET="ECP203G"
PORT
P=1
Z=50 Ohm
PORT
P=2
Z=50 Ohm
on the WJ evaluation board as shown.
This component should be placed at silk screen marker "A"
edge of the ECP203G pins to the center of the component.
·The transmission line length are from the
evaluation board as shown.
silk screen marker "1" on the WJ
This component should be placed between device and
+5 V
All passive components are of size 0603 unless otherwise noted.
size 1008
+5.6 V zener
ECP203G 2.6 - 2.7GHz
-25
-20
-15
-10
-5
0
2.55 2.60 2.65 2.70 2.75
Frequency (GHz)
S11 & S22 (dB)
6
7
8
9
10
11
Gain (dB)
S11 S22 S21
ECP203G 2.6 - 2.7GHz
43
44
45
46
47
48
2.55 2.6 2.65 2.7 2.75
Frequency (GHz)
OIP3 (dBm)
29
30
31
32
33
34
P1dB (dBm)
OIP3 P1dB
8
6
1
3
4 5
27
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800- WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 8 of 9 April 2006
ECP203
2 Watt, High Linearity InGaP HBT Amplifier Product Information
The Communications Ed
g
e TM
ECP203G-G (Lead-Free Package) Mechanical Information
This package is lead-free/green/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free
(maximum 260 °C reflow temperature) and lead (maximum 245 °C reflow temperature) soldering processes.
Outline Drawing
Mounting Configuration / Land Pattern
Thermal Specifications
Parameter Rating
Operating Case Temperature -40 to +85 °C
Thermal Resistance, Rth (1) 17.5 °C / W
Junction Temperature, Tj (2) 155 °C
Notes:
1. The thermal resistance is referenced from the junction-to-case at a case
temperature of 85 °C. Tj is a function of the voltage at pins 6 and 7 and the
current applied to pins 6, 7, and 8 and can be calculated by:
Tj = Tcase + Rth * Vcc * Icc
2. This corresponds to t he typical biasing condition of +5V, 800 mA at an 85
°C case temperature. A minimum MTTF of 1 million hours is achi eved fo r
junction temperatures below 247 °C.
Product Marking
The component will be marked with an
“ECP203G-G” designator with an
alphanumeric lot code on the top surface of the
package. The obsolete tin-lead package is
marked with an “ECP03G” designator
followed by an alphanumeric lot code.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
ESD / MSL Information
ESD Rating: Class 1B
Value: Passes 500 V to <1000 V
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
MSL Rating: Level 2 at +260 °C convection reflow
Standard: JEDEC Standard J-STD-020
Mounting Config. Notes
1. A heatsink underneath the area of the PCB for the mounted
device is strictly required for proper thermal operation.
Damage to the device can occur without the use of one.
2. Ground / thermal vias are critical for the proper performan ce
of this device. Vias should use a .35mm (#80 / .0135”)
diameter drill and have a final plated thru diameter of .25
mm (.010”).
3. Add as much copper as possible to inner and outer layers
near the part to ensure optimal thermal performance.
4. Mounting screws can be added near the part to fasten the
board to a heatsink. Ensure that the ground / thermal via
region contacts the heatsink.
5. Do not put solder mask on the backside of the PC board in
the region where the board contacts the heatsink.
6. RF trace width depends upon the PC board material and
construction.
7. Use 1 oz. Copper minimum.
8 All dimensions are in millimeters (inches). Angles are in
degrees.
M TTF vs. GN D Tab Tem perature
100
1000
10000
100000
60 70 80 90 100 110 120
Tab Temperature (°C)
MTTF (million hrs)
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800- WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 9 of 9 April 2006
ECP203
2 Watt, High Linearity InGaP HBT Amplifier Product Information
The Communications Ed
g
e TM
ECP203D-G (16-pin 4x4mm Package) Mechanical Information
This package is lead-free/green/RoHS-compliant. The plating material on the leads is annealed matte tin over copper. It is compatible with
both lead-free (maximum 260 °C reflow temperature) and lead (maximum 245 °C reflow temperature) soldering processes.
Outline Drawing
E203G
Land Pattern
Thermal Specifications
Parameter Rating
Operating Case Temperature -40 to +85 °C
Thermal Resistance, Rth (1) 17.5 °C / W
Junction Temperature, Tj (2) 155 °C
Notes:
1. The thermal resistance is referenced from the junction-to-case at a case
temperature of 85 °C. Tj is a function of the voltage at pins 10 and 11 an d
the current applied to pins 10, 11, and 16 and can be calculated by:
Tj = Tcase + Rth * Vcc * Icc
2. This corresponds to the typical biasing condition of +5V, 800 mA at an 85°
C case temperature. A minimum MTTF of 1 million hours is achieved for
junction temperatures below 247 °C.
Product Marking
The component will be marked with an
“E203G” designator with an alphanumeric lot
code on the top surface of the package. The
obsolete tin-lead package is marked with an
“E203” designator followed by an
alphanumeric lot code.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
ESD / MSL Information
ESD Rating: Class 1B
Value: Passes between 500 and 1000V
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
MSL Rating: Level 2 at +260 °C convection reflow
Standard: JEDEC Standard J-STD-020
Mounting Config. Notes
1. A heatsink underneath the area of the PCB for the mounted
device is strictly required for proper thermal operation.
Damage to the device can occur without the use of one.
2. Ground / thermal vias are critical for the proper performan ce
of this device. Vias should use a .35mm (#80 / .0135”)
diameter drill and have a final plated thru diameter of .25
mm (.010”).
3. Add as much copper as possible to inner and outer layers
near the part to ensure optimal thermal performance.
4. Mounting screws can be added near the part to fasten the
board to a heatsink. Ensure that the ground / thermal via
region contacts the heatsink.
5. Do not put solder mask on the backside of the PC board in
the region where the board contacts the heatsink.
6. RF trace width depends upon the PC board material and
construction.
7. Use 1 oz. Copper minimum.
8 All dimensions are in millimeters. Angles are in degrees.
M TTF vs. GN D Tab Tem perature
100
1000
10000
100000
60 70 80 90 100 110 120
Tab Temperature (°C)
MTTF (million hrs)