Electrical Characteristics @TA = 25°C unless otherwise specified
DS30272 Rev. 8 - 2
2 of 4
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MMBT4401T
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Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage V(BR)CBO 60 ⎯ V IC = 100μA, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO 40 ⎯ V IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage V(BR)EBO 6.0 ⎯ V IE = 100μA, IC = 0
Collector Cutoff Current ICEX ⎯ 100 nA VCE = 35V, VEB(OFF) = 0.4V
Base Cutoff Current IBL ⎯ 100 nA VCE = 35V, VEB(OFF) = 0.4V
ON CHARACTERISTICS (Note 5)
DC Current Gain hFE
20
40
80
100
40
⎯
⎯
⎯
300
⎯
⎯
IC = 100µA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 150mA, VCE = 1.0V
IC = 500mA, VCE = 2.0V
Collector-Emitter Saturation Voltage VCE(SAT) ⎯ 0.40
0.75 V IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Base-Emitter Saturation Voltage VBE(SAT)
0.75
⎯
0.95
1.2 V IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cobo ⎯ 6.5 pF VCB = 5.0V, f = 1.0MHz, IE = 0
Input Capacitance Cibo ⎯ 30 pF VEB = 0.5V, f = 1.0MHz, IC = 0
Input Impedance hie 1.0 15 kΩ
Voltage Feedback Ratio hre 0.1 8.0 x 10-4
Small Signal Current Gain hfe 40 500 ⎯
Output Admittance hoe 1.0 30 μS
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product fT 250 ⎯ MHz VCE = 10V, IC = 20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time td ⎯ 15 ns
Rise Time tr ⎯ 20 ns
VCC = 30V, IC = 150mA,
VBE(off) = 2.0V, IB1 = 15mA
Storage Time ts ⎯ 225 ns
Fall Time tf ⎯ 30 ns
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
Notes: 5. Short duration pulse test used to minimize self-heating effect.
0
100
150
50
200
250
0160200
,
WE
DISSI
A
I
N (mW)
d
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Power Derating Curve
A
1208040
1
10
1,000
100
0.1 110 1,000
100
h, D
EN
AIN
FE
I , COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain vs.
Collector Current
C
T = -25°C
A
T = 25°C
A
T = 125°C
A
V = 1.0V
CE