Features
•Over temperature shutdown
•Over current shutdown
•Active clamp
•Low current & logic level input
•E.S.D protection
IPS0551T
FULLY PRO TECTED POWER MOSFET SWITCH
Data Sheet No. PD60160-C
Package
Product Summary
Typical Connection
Description
The IPS0551T is a fully protected three terminal SMART
POWER MOSFET that features over-current, over-tem-
perature, ESD protection, and drain to source active
clamp. This device combines a HEXFET® POWER
MOSFET and a gate driver. It offers full protection and
high reliability required in harsh environments. The driver
allows short switching times and provides efficient protec-
tion by turning OFF the power MOSFET when temperature
exceeds 165oC or when the drain current reaches 100A.
The device restarts once the input is cycled. The ava-
lanche capability is significantly enhanced by the active
clamp and covers most inductive load demagnetiza-
tions.
Rds(on) 6.0mΩ (max)
V clamp 40V
Ishutdown 100A
Ton/Toff 4µs
SUPER TO220
Lo ad
R in series
( if needed )
Logic signal
IN D
control
S
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(Please refer to
lead assignment
for correct pin
configuration)
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(1) Limited by junction temperature (pulsed current limited also by internal wiring)
(2) Operation at higher switching frequencies is possible. See Appl. Notes.
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to SOURCE lead. (TAmbient = 25oC unless otherwise specified). PCB mounting uses the standard foot-
print with 70 µm copper thickness.
Symbol Parameter Min. Max. Units Test Conditions
Vds Maximum drain to source voltage — 37
Vin Maximum input voltage -0.3 7
I+in Maximum IN current -10 +10 mA
Isd cont. Diode max. continuous current (1)
(rth=60oC/W) — 2.8
(rth=5oC/W) — 35
Isd pulsed Diode max. pulsed current (1) — 100
Pd Maximum power dissipation(1)
(rth=60oC/W) — 2 W
ESD1 Electrostatic discharge voltage (Human Body) — 4 C=100pF, R=1500Ω,
ESD2 Electrostatic discharge voltage (Machine Model) — 0.5 C=200pF, R=0Ω, L=10µH
T stor. Max. storage temperature -55
150
Tj max. Max. junction temperature -40
+150
Tlead Lead temperature (soldering, 10 seconds) — 300
V
A
kV
Symbol Parameter Min. Typ. Max. Units Test Conditions
Rth 1 Thermal resistance free air — 60 —
Rth 2 Thermal resistance to PCB min footprint — 60 —
Rth 3 Thermal resistance to PCB 1" sq. footprint — 35 —
Rth 4 Thermal resistance junction to case — 0.7 a
Thermal Characteristics
oC/W
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter Min. Max. Units
Vds (max) Continuous drain to source voltage — 18
VIH High level input voltage 4 6
VIL Low level input voltage 0 0.5
Ids Continuous drain current
Tamb=85oC (TAmbient = 85oC, IN = 5V, rth = 80oC/W, Tj = 125oC) — 8
(TAmbient = 85oC, IN = 5V, rth = 5oC/W, Tj = 125oC) — 35
Rin Recommended resistor in series with IN pin 0.1 0.5 kΩ
Tr-in (max) Max recommended rise time for IN signal (see fig. 2) — 1 µS
Fr-Isc (2) Max. frequency in short circuit condition (Vcc = 14V) 0 1 kHz
V
A
oC
IPS0551T
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Symbol Parameter Min. Typ. Max. Units Test Conditions
Tsd Over temperature threshold — 1 65 — oC See fig. 1
Isd Over current threshold 60 100 150 A See fig. 1
Vreset IN protection reset threshold 1.5 1 .9 2.8 V
Treset Time to reset protection 2 10 40 µs V in = 0V, Tj = 25oC
EOI_OT Short circuit energy (cf application note) 100 400 1200 µJVcc = 14V
Protection Characteristics
Symbol Parameter Min. T yp. Max. Units Test Conditions
Rds(on) ON state resistance Tj = 25oC — 4.5 6.0
@Tj=25oC
Rds(on) ON state resistance Tj = 150oC — 7.5 8.8
@Tj=150oC
Idss Drain to source leakage current 0 0.01 25 µA Vcc = 14V, Tj = 25oC
@Tj=25oC
V clamp 1 Drain to source clamp voltage 1 37 40 —Id = 20mA (see Fig.3 & 4)
V clamp 2 Drain to source clamp voltage 2 — 43 48
Vsd Body diode forward voltage — 0.85 1I
d = 35A, Vin = 0V
Vin clamp IN to source clamp voltage 7 8.0 9.5 Iin = 1 mA
Vth IN threshold voltage 1.0 1.8 2.2 Id = 50mA, Vds = 14V
Iin, on Input supply current (normal operation) 25 90 300 Vin = 5V
Iin, off Input supply current (protection mode) 50 130 400 Vin = 5V
over-current triggered
Static Electrical Characteristics
(Tj = 25oC and Vcc = 14V unless otherwise specified. Standard footprint 70µm of copper thickness)
I=35A -t<100us
V
µA
Switching Electrical Characteristics
Vcc = 14V, Resistive Load = 0.4Ω, Rinput = 50Ω, 100µs pulse, Tj = 25oC, (unless otherwise specified).
Symbol Parameter Min. Typ. Max. Units Test Conditions
Ton Turn-on delay time 0.25 1 4
TrRise time 0.25 14
Trf Time to 130% final Rds(on) —15—
Toff Turn-off delay time 1.5 4 8
TfFall time 0.5 2 5
Qin Total gate charge — 200 — nC Vin = 5V
See figure 2
See figure 2
µs
mΩVin = 5V, Ids = 10A
IPS0551T
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Lead Assignments
SUPER TO220
1 2 3
In D S
Functional Block Diagram
All values are typical
IN
DRAIN
SOURCE
8V
80
µ
A
37 V
I se n s e
100 k
Ω
200
Ω
S Q
R Q
T > 165°c
I > Isd
IPS0551T
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14 V
IN D
S
5 v
0 v
L
R+
-
Vds
Ids
Vin
V load
Rem : V load is negative
during demagnetization
Figure 4 - Active clamp test circuitFigure 3 - Active clamp waveforms
Ids
Vds
Vin
T clam
p
Vds clam
p
(
Vcc
)
( see Appl . Notes to evaluate power dissipation )
Figure 1 - Timing diagram
Tr-in
10 %
90 %
90 %
10 %
Td on Td off tf
tr
Ids
Tr-in
Vin
Vds
Figure 2 - IN rise time & switching time definitions
Tsd
(165 °c)
Vin
Ids
Isd I shutdown
TT s hutdown
t < T reset t > T reset
5 V
0 V
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All curves are typical values with standard footprint. Operating in the shaded area is not recommended.
Figure 6 - Normalised Rds(on) (%) Vs Tj (oC)Figure 5 - Rds(on) (mΩ) Vs Input Voltage (V)
Figure 8 - Turn-OFF Delay Time & Fall Time (us)
Vs Input Voltage (V)
Figure 7 - Turn-ON Delay Time, Rise Time & Time
to 130% final Rds(on) (us) Vs Input Voltage (V)
0
1
2
3
4
5
6
7
8
9
10
11
12
012345678
Tj = 150oC
Tj = 25oC
0
5
10
15
20
25
30
35
40
012345678
to ff d ela y
f all time
0
5
10
15
20
25
30
35
40
012345678
ton delay
rise t ime
130% rdson
0%
20%
40%
60%
80%
100%
120%
140%
160%
180%
200%
-50 -25 0 25 50 75 100 125 150 175
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Figure 9 - Turn-ON Delay Time, Rise Time & Time
to 130% final Rds(on) (us) Vs IN Resistor (Ω)Figure 10 - Turn-OFF Delay Time & Fall Time (us)
Vs IN Resistor (Ω)
1
10
100
10 100 1000
del ay of f
fall time
1
10
100 delay on
rise tim e
130% rdson
10 100 1000
Figure 12 - Over-current (A) Vs Temperature (oC)
Figure 11 - Current Iim. & Ishutdown (A) Vs Vin (V)
0
10
20
30
40
50
60
70
80
90
100
-50 -25 0 25 50 75 100 125 150
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
0123456789
Isd 25°C
Ilim 25°C
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Figure 15 - Iclamp (A) Vs Inductive Load (mH) Figure 16 - Transient Thermal Imped. ( oC/W)
Vs Time (s)
Figure 13 - Max.Cont. Ids (A) Vs
Amb. Temperature (oC)
0
10
20
30
40
50
60
70
80
90
100
-50 0 50 100 150 200
rth = 1°C/W (cas e to ambient)
r t h = 5°C /W
r t h = 15 °C /W
rt h = 30°C /W: 1'' foo tprint
rth = 6 0 °C/W : s td. footpri n t
Figure 14 - Ids (A) Vs Protection Resp. Time (s)
1
10
100
1000 T= 25 °C free air/ std. footprint
T=100°C free air/ std. footprint
C urre nt pat h c a pability sho uld
be above t his cur ve
Load characteristic shoul d
be belo w this cur ve
1.00E-02
1.00E-01
1.00E+00
1.00E+01
1.00E+02
rth free a ir / std. fooprint
rth 1 inch² footprint
rth infinite heatsink
Single pulse
0.1
1
10
100
1000
0.001 0.01 0.1 1 10
single pulse
10 Hz rth=60°C/W dT = 25°C
100Hz rth = 60°C/ W dT= 25°C
IPS0551T
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0
20
40
60
80
100
120
140
160
180
200
-50 -25 0 25 50 75 100 125 150
Iin,on
Iin,off
0
2
4
6
8
10
12
14
16
-50 -25 0 25 50 75 100 125 150
Treset
rise time
fall time
Figure 17 - Inputcurrent (µA) Vs Junction (oC) Figure 18 - Turn-on, Turn-off and Treset (µS) Vs Tj (oC)
80%
85%
90%
95%
100%
105%
110%
115%
120%
-50 -25 0 25 50 75 100 125 150
Vds clamp @ Isd
Vin clamp @ 10mA
Figure 19 - Vin clamp1 & Vin clamp2 (%) Vs Tj (oC)
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Case outline Super TO220
01-3073 02
4.00 [.157]
3.50 [.138] 14.50 [.570]
13.00 [.512]
1.30 [.051]
0.90 [.036]
2.55 [.100]
2X
15.00 [.590]
14.00 [.552]
11.00 [.433]
10.00 [.394]
1.50 [.059]
0.50 [.020]
A
123
3X
0.25 [.010] B A 3.00 [.118]
2.50 [.099]
1.00 [.039]
0.70 [.028]
5.00 [.196]
4.00 [.158]
B
4X
4
9.00 [.354]
8.00 [.315]
13.50 [.531]
12.50 [.493]
0.25 [.010] B A
1. DIMENSION IN G & TOLERANCING PER ASM E Y14 .5M-199 4.
2. CONTROL LING DIMENS ION: MILLIMET ER.
3. DIMENSIONS ARE SHO WN IN MILLIM ETERS [INCHES].
OS
4. OUT LINE CONF ORMS TO JEDEC OUT LINE T O-273AA.
LEAD ASSIGNMENTS
2 - DRAIN
1 - GATE
MOS F E T
4 - DRAIN
3 - SOURCE 4 - COLLECTOR
3 - EMITTER
2 - COLLECTOR
1 - GATE
IGBT
IR WORLD HEADQUARTERS: 233 Kansas Street, El Segundo, California 90245 Tel: (310) 252-7105
Data and specifications subject to change without notice. 6/21/2002
