T4-LDS-0241, Rev. 1 (112023) ©2011 Microsemi Corporation Page 1 of 4
1N5610 thru 1N5613
Available on
commercial
versions
Voidless Hermetically Sealed Uni directional
Tr ansien t Vo ltage Su p pres so rs
Qualified per MIL-PRF-19500/434
Qualified Levels:
JAN , JANTX, and
JANTXV
DESCRIPTION
This series of industry recognized voidless hermetically sealed unid i r ectional Transi ent
V oltage S uppressor (TVS) desi gns is military qu al ified and ar e ideal for high-reliability
applications wher e a fail ure cannot be t olerated. Th ey provide a Wor king P eak “S tandoff”
V oltage sel ection from 30.5 to 175 volts with 1500 watt ratings. They are very robust in hard-
glass construct i on and als o us e an internal metallu r gical bond id entified as “Category 1” for
high reliability app lic at ion s . These d evices are also av ai lable i n a s urfac e mount MELF
pack age configuration as a speci al or der. Microsemi also offers n umerous oth er TV S
products to meet higher and lower peak pulse power and voltage ratings in both through-hole
and surface-mou nt pac kag es.
“G” Package
Also av ai la ble by
Special order:
MELF Surf ace Mount
Important: For the latest information, visit our web site http://www.microsemi.com.
FEATURES
• High surge current and peak pulse power provides transient voltage protection for sensitive circuits.
• Triple-layer passivation.
• Internal “Category 1” metallurgical bonds.
• Voidless hermetically sealed glass package.
• JAN, JANTX, and JANTXV military qualifications available per MIL-PRF-19500/434.
• Further options for screening in accordance with MIL-PRF-19500 for JANS equivalent level by
using a “SP” prefix.
• RoHS compliant versions available (commercial grade only).
APPLICATIONS / BENEF ITS
• Military and other high reliability transient protection.
• Extremely robust construction.
• Working Peak “Standoff” Voltage (VWM) from 30.5 to 175 V.
• Available as 1500 watt Peak Pulse P ower (PPP).
• ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4 respectively.
• Secondary lightning protection per select levels in IEC61000-4-5.
• Flexible axial-l eaded mounting terminals.
• Non-sensitive to ESD per MIL-STD-750 method 1020.
• Inherently radiation hard as described in Microsemi “MicroNote 050 ”.
MAXI MUM RATIN GS @ TA = 25 oC unl ess oth er wis e noted.
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-55 to +175
oC
Peak Pulse Power @ tp = 1.0 ms
PPP
1500
W
Rated Forward Surge Current @ tp = 8.33 ms
IFSM
150
A (pk)
Impulse repetition rate (duty factor)
IPP
0.01
%
Steady-State Power (1) (Figure 4)
PD
3.0
W
Solder Temperature @ 10 s
TSP
260
oC
Notes: 1. Derate at 20 mW/oC above TA = +25 oC. Steady-state power ratings with referen ce to ambient are for PC
boards where thermal resistance from mounting point to ambient is sufficiently controlled where TJ(MAX)
is not exceeded.
T4-LDS-0241, Rev. 1 (112023) ©2011 Microsemi Corporation Page 2 of 4
1N5610 thru 1N5613
• CASE: Hermetically sealed voidless hard glass with tung sten slug s.
• TERMINATIONS: Axial-leads are tin/lead (Sn/Pb) over copper. RoHS compliant matte-tin available for commercial only.
• MARKING: Body painted and part number.
• POLARITY: Cathode band.
• Tape & Reel option: Standard per EIA-296. Consult factory for quantities.
• Weight: 1270 milligrams.
• See Package Dimensions on last page.
JAN 1N5610 (e3)
Reliability Leve l
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
SP = Reference JANS
Blank = Commercial
RoHS Compl iance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
JEDEC type number
See Electrical Characteristics
table
SYMBOL S & DEFI NITIONS
Symbol
Definition
I(BR)
Breakdown Current: The c urrent used for measuring Breakdown Voltage V(BR) .
ID
Maximum Standoff Current: The maximum current that will flow at the specified voltage and temperature.
IPP
Peak Pulse Current: The peak current during the impulse.
PPP
Peak Pulse Power: The peak power dissipation resulting from the peak impulse current IPP.
TSP
Temperature Solder Pad: The maximum solder tem perature that can be safely applied to the terminal.
α V(BR)
Temperature Coefficient of Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified
current temperature.
V(BR)
Minimum Breakdown Voltage: The minimum voltage the device will exhi bit at a specified current.
VC
Maximum clamping voltage at specified IPP (Peak Pulse Current) at the specified pulse conditions.
VWM
Work ing Peak V oltage: The maximum peak voltage that can be applied over the operating temperature range. This is
also referred to as Standoff Voltage.
TYPE
MINIMUM
BREAK
DOWN
VOLTAGE
V(BR)
@ 1.0 mA
BREAKDOWN
CURRENT
MAXIMUM dc
CURRENT
TA = +25 oC
I (BR)
WORKING
PEAK
REVERSE
VOLTAGE
VWM
MAX
STANDOFF
CURRENT
ID
@ VWM
MAXIMUM
CLAMPING
VOLTAGE
VC
@ 10/1000 µs
MAXIMUM
PEAK PULSE
CURRENT
IPP
@8/20 µs @10/1000 µs
MAXIMUM
TEMP.
COEF.
OF V(BR)
α V(BR)
Volts
mA
V (pk)
µA
V (pk)
A (pk)
A (pk)
% / oC
1N5610
33.0
75.0
30.5
5
47.6
193
32.0
.093
1N5611
43.7
53.0
40.3
5
63.5
136
24.0
.094
1N5612
54.0
43.0
49.0
5
78.5
116
19.0
.096
1N5613
191
12.5
175
5
265
33
5.7
.100
T4-LDS-0241, Rev. 1 (112023) ©2011 Microsemi Corporation Page 3 of 4
1N5610 thru 1N5613
Pulse Time (tp) Tim e ( t) in microseconds
FIG. 1 – Non-repeti tiv e peak puls e power rating curve FIG. 2 Pulse wave form for e xpon ential
NOTE: Peak power defined as peak voltage times peak current. surge for 10/1000 µs
T – Time – µs T – Temperature – oC
FIGURE 3 FIGURE 4
8/20 µs CURRENT IMPULSE WAVE FORM DERATING CURVE
TES T WA VEFORM PA RAMETERS: tr = 8µsec
tp = 20µsec
Peak Pulse Power (Ppp), Current (Ipp),
an d D C Power i n Per cen t of 25
o
C Rat ing
I
PP
– Pe ak Pul s e C ur r en t - % I
PP
Peak Pulse Power P
PP
in kW
Pulse time duration (tp) is
defined as that point w her e
I
P decays to 50% of peak
value (I
PP).
Peak Value
IPP
Pulse current (I
P
) i n per cen t of I
PP
T4-LDS-0241, Rev. 1 (112023) ©2011 Microsemi Corporation Page 4 of 4
1N5610 thru 1N5613
Ltr
Dimensions
Notes
Inches
Millimeters
Min
Max
Min
Max
BD
.150
.185
3.81
4.70
3
BL
.160
.375
4.06
9.53
3
LD
.037
.042
0.94
1.07
LL
.900
1.300
22.86
33.02
LU
.050
1.27
4
Schematic Symbol
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Package contour optional within BD and length BL.
4. Within this zone lead diameter may vary to allow for lead finishes and irregularities other than heat slugs.
5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.