This is information on a product in full production.
December 2014 DocID026831 Rev 2 1/13
STP110N8F6
N-channel 80 V, 0.0056 Ω typ.,110 A, STripFET™ F6
Power MOSFET in a TO-220 package
Datasheet
-
production data
Figure 1. Internal schematic diagram
Features
•Very low on-resistance
•Very low gate charge
•High avalanche ruggedness
•Low gate drive power loss
Applications
•Switching applications
Description
This device is an N-channel Power MOSFET
developed using the STripFET™ F6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low R
DS(on)
in all
packages.
$0Y
'7$%
*
6
TO-220
1
2
3
TAB
Order code V
DS
R
DS(on)max
I
D
P
TOT
STP110N8F6 80 V 0.0065 Ω110 A 200 W
Table 1. Device summary
Order code Marking Package Pac king
STP110N8F6 110N8F6 TO-220 Tube
www.st.com
Contents STP110N8F6
2/13 DocID026831 Rev 2
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.1 T O-220 package i n formation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
DocID026831 Rev 2 3/13
STP110N8F6 Electrical ratings
13
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage 80 V
V
GS
Gate-source voltage ±20 V
I
D
Drain current (continuous) at T
C
= 25 °C 110 A
I
D
Drain current (continuous) at T
C
= 100 °C 85 A
I
DM(1)
1. Pulse width is limited by safe operating area
Drain current (pulsed) 440 A
P
TOT
Total dissipation at T
C
= 25 °C 200 W
E
AS(2)
2. S tarting T
J
= 25 °C, I
D
= 55 A, V
DD
= 60 V
Single pulse avalanche energy 180 mJ
T
J
Operating junction temperature -55 to 175 °C
T
stg
Storage temperature °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thj-case
Thermal res is t anc e jun cti on- cas e max. 0.75 °C/W
R
thj-amb
Thermal res istance juncti on- amb ie nt max . 62.5 °C/W
Electrical characteristics STP110N8F6
4/13 DocID026831 Rev 2
2 Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 4. On/off-state
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
breakdown voltage V
GS
= 0, I
D
= 1 mA 80 V
I
DSS
Zero-gate voltage
drain current
V
GS
= 0, V
DS
= 80 V 1 µA
V
GS
= 0, V
DS
= 80 V,
T
C
= 125 °C 100 µA
I
GSS
Gate-body leakage
current V
DS
= 0, V
GS
= +20 V 100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA 2.5 4.5 V
R
DS(on)
Static drain-source
on- resistance V
GS
= 10 V, I
D
= 55 A 0.0056 0.0065 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
iss
Input capacitance
V
DS
= 40 V, f = 1 MHz,
V
GS
= 0
- 9130 - pF
C
oss
Out put capacitance - 320 - pF
C
rss
Reverse transfer
capacitance - 225 - pF
Q
g
Total gate charge V
DD
= 40 V, I
D
= 110 A,
V
GS
= 10 V
(see Figure 14)
- 150 - nC
Q
gs
Gate-sou rce charge - 40 - nC
Q
gd
Gate-drain charge - 30 - nC
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time V
DD
= 40 V, I
D
= 55 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see Figure 13)
-24-ns
t
r
Rise time - 61 - ns
t
d(off)
Turn-off delay time - 162 - ns
t
f
Fall time - 48 - ns
DocID026831 Rev 2 5/13
STP110 N8F6 E lect ri cal chara ct er ist ics
13
Table 7. Source-drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
SD(1)
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage I
SD
= 110 A, V
GS
= 0 - 1.2 V
t
rr
Reverse recovery time I
SD
= 110 A, di/dt = 100 A/ µs
V
DD
= 64 V (see Figure 15)
-30 ns
Q
rr
Reverse recovery charge - 34 nC
I
RRM
Reverse recovery current - 2.3 A
Electrical characteristics STP110N8F6
6/13 DocID026831 Rev 2
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
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V
PV
V
7M &
7F &
6LQJOHSXOVH
*,3*/0
į
6LQJOHSXOVH
.
W
S
V
*,3*/0
Figure 4. Output characteristics Figure 5. Transfer characteristics
,'
9'69
$
9
9
9*6 9
*,3*/0
,'
9*69
$
9'6 9
*,3*/0
Figure 6. Gate charge vs gate-source Figure 7. Static drain-source on-resistance
9
*6
4
J
Q&
9
9
''
9
,
'
$
*,3*/0
5'6RQ
,'$
Pȍ
9*6 9
*,3*/0
DocID026831 Rev 2 7/13
STP110 N8F6 E lect ri cal chara ct er ist ics
13
Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage vs
temperature
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&RVV
&UVV
*,3*/0
9*6WK
7-&
QRUP
,' $
*,3*/0
Figure 10. Normalized on-resistance Figure 11. Normalized V
(BR)DSS
vs temperature
5'6RQ
7-&
QRUP
9*6 9
*,3*/0
9%5'66
7-&
QRUP
,' P$
*,3*/0
Figure 12. Drain-source diode forward
characteristics
96'
,6'$
9
7- &
7- &
7- &
*,3*/0
Test circuits STP110N8F6
8/13 DocID026831 Rev 2
3 Test circuits
Figure 13. Switching times test circuit for
resistive load Figure 14. Gate charge test circuit
Figure 15. Test circuit for inductive load
switching and diode recovery times Figure 16. Unclamped inductive load tes t circuit
Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF
3.3
μFVDD
AM01469v1
VDD
47kΩ1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200
μF
PW
IG=CONST
100Ω
100nF
D.U.T.
VG
AM01470v1
A
D
D.U.T.
S
B
G
25 Ω
AA
B
B
RG
G
FAST
DIODE
D
S
L=100μH
μF
3.3 1000
μFVDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200
μF
3.3
μFVDD
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon tdoff
toff
tf
tr
90%
10%
10%
0
0
90%
90%
10%
VGS
DocID026831 Rev 2 9/13
STP110N8F6 Package information
13
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
is an ST trademark.
Package information STP110N8F6
10/13 DocID026831 Rev 2
4.1 TO-220 package information
Figure 19. TO-220 type A outline
BW\SH$B5HYB7
DocID026831 Rev 2 11/13
STP110N8F6 Package information
13
Table 8. TO-220 type A mechanical data
Dim. mm
Min. Typ. Max.
A4.40 4.60
b0.61 0.88
b1 1.14 1.70
c0.48 0.70
D 15.25 15.75
D1 1.27
E 10 10.40
e2.40 2.70
e1 4.95 5.15
F1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L13 14
L1 3.50 3.93
L20 16.40
L30 28.90
øP 3.75 3.85
Q2.65 2.95
Revision history STP110N8F6
12/13 DocID026831 Rev 2
5 Revision history
Table 9. Document revision history
Date Revision Changes
26-Sep-2014 1 First release.
05-Dec-2014 2
Updated in cover page the title and features.
Product status promoted from preliminary to production data.
Updated E
AS
parameter in Table 2 and R
DS(on)
in Table 4.
Updated Table 5, Table 6 and Table 7.
Inserted Section 2.1.
DocID026831 Rev 2 13/13
STP110N8F6
13
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