2N2904 2N2904A 2N2905 2N2905A PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2904, 2N2905 series types are PNP silicon transistors manufactured by the epitaxial planar process, designed for small signal, general purpose and switching applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Power Dissipation PD Power Dissipation (TC=25C) PD Operating and Storage Junction Temperature TJ, Tstg 2N2904 2N2905 MIN MAX 20 60 40 5.0 0.4 1.6 1.3 2.6 2N2904 2N2904A MIN MAX 20 VCE=10V, IC=100A (2N2904, 2N2905) VCE=10V, IC=100A (2N2904A, 2N2905A) 40 VCE=10V, IC=1.0mA (2N2904, 2N2905) 25 VCE=10V, IC=1.0mA (2N2904A, 2N2905A) 40 VCE=10V, IC=10mA (2N2904, 2N2905) 35 VCE=10V, IC=10mA (2N2904A, 2N2905A) 40 VCE=10V, IC=150mA 40 120 VCE=10V, IC=500mA (2N2904, 2N2905) 20 VCE=10V, IC=500mA (2N2904A, 2N2905A) 40 - ELECTRICAL SYMBOL ICBO ICEV BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE hFE hFE hFE hFE 2N2904 2N2905 60 40 CHARACTERISTICS: (TA=25C) TEST CONDITIONS VCB=50V VCE=30V, VEB=0.5V IC=10A IC=10mA IE=10A IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA 2N2904A 2N2905A 60 60 5.0 0.6 0.6 3.0 -65 to +200 2N2904A 2N2905A MIN MAX 10 50 60 60 5.0 0.4 1.6 1.3 2.6 2N2905 2N2905A MIN MAX 35 75 50 100 75 100 100 300 30 50 - UNITS V V V A W W C UNITS nA nA V V V V V V V R1 (11-June 2012) 2N2904 2N2904A 2N2905 2N2905A PNP SILICON TRANSISTOR ELECTRICAL SYMBOL fT Cob ton toff CHARACTERISTICS - Continued: (TA=25C unless otherwise noted) TEST CONDITIONS MIN MAX UNITS VCE=20V, IC=50mA, f=100MHz 200 MHz VCB=10V, f=100kHz 8.0 pF VCC=30V, IC=150mA, IB=15mA 45 ns VCC=6.0V, IC=150mA, IB1=IB2=15mA 180 ns TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (11-June 2012) w w w. c e n t r a l s e m i . c o m