RF2850PCBA - RF Micro Devices - Datasheet.Directory

5-51

Product Description

Ordering Information

Typical Applications

Features

Functional Block Diagram

RF Micro Devices, Inc.

7628 Thorndike Road

Greensboro, NC 27409, USA

Tel (336) 664 1233

Fax (336) 664 0454

http://www.rfmd.com

Optimum Technology Matc hing® Applied

Si BJT GaAs MESFETGaAs HBT

Si Bi-CMOS SiGe HBT Si CMOS

InGaP/HBT GaN HEMT SiGe Bi-CMOS

VCC

QSIG

QREF

GND

VCC

GND

RFOUT

GND

VCC

GND

LOREF

RFREFGND

ISIG

IREF

1516

-45°

+45° Σ

RF2850

DIRECT QUADRATURE MODULATOR

• UMTS Base Stations

• CDMA Base Stations

• GSM-EDGE/EGSM Base Stations

• WLAN and WLL Systems

• GMSK,QPSK,DQPSK,QAM Modulation

The RF2850 is a direct quadrature modulator for use in

base stations and other communications systems.

RF2850 supports PCS, GSM, EDGE, CDMA2000, and

UMTS standards. This device features a narrow-band

operation at 1700 MHz to 2500MHz with excellent carrier

and sideband suppression and ultra low noise floor. The

device is manufactured on an advanced GaAs HBT pro-

cess. The RF2850 operates from a single 5V supply and

is packaged in a low cost 4mmx4mm 16-pin leadless

package.

• Typical Carrier Suppression>40dBc

• Typical Sideband Suppression>40dBc

• Noise Floor better than -158dBm/Hz

• Single 5V Power Supply

RF2850 Direct Quadrature Modulator

RF2850 PCBA Fully Assembled Evaluation Board

Rev A0 050616

0.10 CABM

0.35

0.23

Pin 1 ID

0.20 R

2.25

1.95 SQ.

0.65

0.75

0.50TYP

0.60

0.24

TYP

0.05 C

0.90

0.85

0.70

0.65 0.05

0.00

12°

MAX

-C- SEATING

PLANE

Shaded lead is pin 1.

Dimensions in mm.

0.10 C A

2 PLCS

-A- 4.00 SQ.

0.10 C B

2 PLCS

0.10 C B

2 PLCS -B-

3.75 SQ

1.87 TYP

0.10 C A

2 PLCS

2.00 TYP

Pa ckage Style: QFN, 16-Pin, 4x4

RoHS Compliant & Pb-Free Product

5-52

RF2850

Rev A0 050616

Absolute Maximum Ratings

Parameter Rating Unit

Supply Voltage -0.5 to +5.3 V

LO Input +10 dBm

Operating Temperature -40 to +85 °C

Storage Temperature -65 to +150 °C

Parameter Specification Unit Condition

Min. Typ. Max.

High Band Performance (1900MHz) with CW Baseband Inputs

LO Input Port

LO Drive Level -5 dBm

LO Input Impedance 50 Ω

LO Port Return Loss 13 dB

Modulation Input

Frequency Range DC 250 MHz

Reference Voltage 2.05 V Baseband common mode voltage

Baseband Input Level 0.25 VP-P 0.25VP-P per pin, 500mV VP-P differential,

I/Q in quadrature

I/Q Signal 200 kHz CW baseband signal

Input Impedance 40 kΩMeasured at DC

Bandwidth (-1dB) 130 MHz 500mV VP-P differential, I/Q at 2.05V DC

Input Bias Current 40 μA

I/Q Modulator Output

RF Frequency Range 1700 2500 MHz T=25°C, VCC=5V

RF Output Power -6 dBm

RF Output Return Loss 15 dB

RF Output P1dB 4 5 dBm

Carrier Suppression 20 25 dBc Unadjusted (see note)

Carrier Suppression 35 55 dBc Adjusted. T=-40°C to +85°C

Sideband Suppression 30 45 dBc Unadjusted

IM3 Suppression 52 dBc Two tone baseband input @ 500mVP-P dif-

ferential per tone

Output IP3 15 20 dBm

Broadband Noise Floor -158 -156 dBm/Hz 20MHz offset from LO, all IQ input at bias of

2.05V

DC Parameter s

Supply Voltage 5.0 V Specification

4.75 5.25 V Operating limits

Supply Current 60 mA

Note: 20dBc limit for unadjusted carrier suppression is applicable for differential I and Q inputs only.

Caution! ESD sensitive device.

RF Micro Device s belie v es the f urnished info rmation is correct and accu rate

at the time of this p rinting. RoHS marking ba sed on EUDirective2002/95/EC

(at time of this printing). However, RF Micro Devices reser ves the right to

make changes to its products without notice. RF Micro Devices does not

assume responsibility for the use of the described product(s).

5-53

RF2850

Rev A0 050616

Parameter Specification Unit Condition

Min. Typ. Max.

High Band Performance with PCS CDMA and W-CDMA Baseband Inputs

W-CDMA 3GPP

Channel Power -13 dBm 3.84MHz integrated bandwidth, ESG-D with

LPF

ACPR @ 1960MHz -68 -62 dBc

SNR @ 1960MHz -74 -70 dBc

ACPR @ 2140MHz -65 -62 dBc

SNR @ 2140MHz -74 -70 dBc

Noise Floor @ 20MHz Offset -156 -155 dBm/Hz 20MHz offset from LO

PCS CDMA

Channel Po w er -13 d Bm 1.2288MHz integr ated band width

ACPR @ 1960MHz -72 -70 dBc 30kHz integrated bandwidth

W-CDMA 1MHz BW

Channel Power -14 dBm 1MHz integrated bandwidth at adjacent

channel

ACPR @ 2140MHz -74 -71 dBc

SNR @ 2140MHz -85 -82 dBc

Noise Floor @ 20MHz Offset -157 -156 dBm/Hz 20MHz offset from LO

5-54

RF2850

Rev A0 050616

Pin Function Description Interface Schematic

1GND

Ground connection.

2LO

LO input signal. This pin has an internal DC-blocking capacitor. This

port is voltage-driven so matching at different frequencies is generally

not required.

3LOREF

The reference end of local oscillator.

4GND

Ground connection.

5VCC

Power supply. An external capacitor is required.

6I REF

Reference voltage for the I mixer. The DC voltage should be the same

as the DC supplied to I SIG (pin 7). See pin 7 for more inform ation.

The SIG and REF inputs a re inputs of a diff erential am plifier . Theref ore ,

the REF and SIG inputs are interchangeab le . If s wappin g the I SIG and

I REF pins, the Q SIG and Q REF also need to be s w apped to maintain

the correct phase. It is also possib le to driv e the SIG and REF inputs in

a differential mode which will increase gain.

7I SIG

Baseband input to the I mixer. This pin is DC-coupled. The input drive

level determines output power and linearity performance. For better

carrier/sideband suppression and dynamic range, the drive level

should be as high as possible to meet the required linearity perfor-

mance. The recommended DC level for this pin is 2.05V.

8GND

Ground connection.

9RFREF

The reference end of RF input.

10 VCC Power supply. An external capacitor is required.

11 GND Ground connection.

12 RF OUT RF Output. This pin has an internal DC-b loc king capacitor. At some fre-

quencies, external matching may be needed to optimize output power.

13 GND Ground connection.

14 Q SIG Baseband input to the Q mixer . This pin is DC-cou pled. The input driv e

lev el determines the output pow er and linearity perf ormance. F or better

carrier/sideband suppression and dynamic range, the drive level

should be as high as possible to meet the required linearity perfor-

mance. The recommended DC level for this pin is 2.05V.

15 Q REF Reference voltage for the Q mixer. See pin 14 for more information.

16 VCC Power supply. An external capacitor is required.

Pkg

Base GND Ground connection.

2 pF

VCC

2 pF

VCC

RF OUT

2 pF

VCC

2 pF

VCC

5-55

RF2850

Rev A0 050616

Evaluation Board Schematic

1700MHz to 2500MHz (Differential Drive)

VIN

VCC VCC2

VCC1 C9

100 pF

C10

100 pF

C14

0.5 pF

-45°

+45°

7 86

1516

QREF 50 Ω μstrip J4

QSIG

50 Ω μstrip

IREF 50 Ω μstrip J5

ISIG

50 Ω μstrip

1 nH

50 Ω μstrip

C12

3.9 pF

C13

3.9 pF

2.1 GHz X2

2.1 GHz

50 Ω μstrip J6

RF OUT

VCC1

100 nH

VCC2

100 nH

100 pF

2.2 pF

5-56

RF2850

Rev A0 050616

Evaluation Board Layout

Board Size 2.00” x 2.00”

Board Thickness 0.042” (±10%), Board Material FR-4