TOSHIBA 2SK210 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK210 FM TUNER APPLICATIONS Unit in mm VHF BAND AMPLIFIER APPLICATIONS High Power Gain : Gpg=24dB (Typ.) (f= 100MHz) @ Low Noise Figure : NF=1.8dB (Typ.) (f=100MHz) @ High Forward Transfer Admitance : |Y.|=7mS (Typ.) (f=1kHz) 2940.2 MAXIMUM RATINGS (Ta = 25C) 438 CHARACTERISTIC SYMBOL | RATING | UNIT + ! | = Gate-Drain Voltage Vapo 18 V i ' Gate Current Ig 10 mA 1 DRAIN z Drain Power Dissipation Pp 100 mW 2. GATE Junction Temperature Tj 125 C 3. SOURCE Storage Temperature Range Tstg 55~125 C JEDEC _ EIAJ SC-59 TOSHIBA 2-3F1C Weight : 0.012g ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. |MAX./UNIT Gate Leakage Current Igss Va@s=1.0V, Vpg=0V |-10] nA Gate-Drain Breakdown Voltage V (BR) GDO} IG= 1004A -18; |]]|vV Drain Current DSS VqGs=0V, Vpg=10V 3]; 24 | mA (Note) Gate-Source Cut-off Voltage |VGs(OFF)| VDS=10V, Ip=1uA -1.2/-3 | Vv Forward Transfer Admittance] [Y4,| Vag=0V, Vpg=10V, f=1kHz 7|/ | mS Input Capacitance Cis Vps=10V, Vag=0V, f=1MHz | 35] | pF Reverse Transfer Capacitance] Cygg Vq@p=10V, f=1MHz | 0.65 | pF Power Gain Gps Vpp=10V, f=100MHz (Fig.) 24 | dB Noise Figure NF Vpp=1L0V, f=100MHz (Fig.) 1.8] 3.5 | dB Note :Ipss Classificatopn Y :3.0~7.0mA, GR(R): 6.0~14.0mA, BL(L) : 12.0~24.0mA 961001EAA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1998-10-28 1/5 TOSHIBA 2SK210 Marking Type Name 3 Ipgg Rank OO Kae YG | eS 1 2 Fig. 100MHz Gps NF TEST CIRCUIT TpF 8pF INPUT p OUTPUT Rg=500 G4 7 RL =500, L 2 & i I Mo Al Be Vpp Ly : 0.8mm Ag PLATED Cu WIRE 3 TURNS, 10mm ID, 10mm LENGTH Lg : 0.8mm Ag PLATED Cu WIRE 3.5 TURNS, 10mm ID, 10mm LENGTH 1998-10-28 2/5 TOSHIBA 2SK210 FORWARD TRANSFER ADMITTANCE GATE-SOURCE CUT-OFF VOLTAGE DRAIN CURRENT Ip (mA) |Yfs| (nS) VGS(OFF) (VY) STATIC CHARACTERISTICS COMMON 16| SOURCE Vag=0.6V: Ta=25C 1 0,3 -3.2 -2.4-16-08 0 4 8 12 16 20 24 GATE-SOURCE DRAIN-SOURCE VOLTAGE Vas (V) VOLTAGE Vpg (V) lYts| - Ip COMMON SOURCE 14] Vpg=10V 12 f=1kHz Ta=25C 0 2 4 6 8 10 12 14 16 18 20 DRAIN CURRENT Ip (mA) VGS (OFF) [bss 10 COMMON SOURCE Vgg(OFF) : Vpg=10V Ip=1pyA _5| lpss : Vps=10V Lt Vag=0V | Ta=25C TA -3 AT | LT a 7 -1 2 5 10 30 DRAIN CURRENT Ipgg (mA) DRAIN CURRENT Ip (mA) FORWARD TRANSFER ADMITTANCE |Yfs] (mS) Ip Vas COMMON SOURCE Vps=10V Ta=25C =< E a fe a & oe o 2 a z a -5 -4 -3 -2 -1 0 0 20 GATE-SOURCE VOLTAGE Vag (V) Ip Vpg (LOW VOLTAGE REGION) COMMON = SOURCE Ta=25C 0.8 16 24 3.2 4.0 4.8 5.6 DRAIN-SOURCE VOLTAGE Vpg (V) lYfsl Ipss 10 COMMON SOURCE Ta=25C Ipss : Vpg=10V Vas=0v lyfs]) : Vpg=10V Vag=0V f=1kHz 5 10 30 DRAIN CURRENT Ipgg (mA) 1998-10-28 3/5 TOSHIBA Crss VGD & 1 = COMMON SOURCE < ra f=1MHz 5 s Ta=25C 5 fe io as & 1 Wm wn 26 & 0.5 2 5 0.2 fe 0 -2 -4 -6 -8 -10 -12 -14 -16 fiat GATE-DRAIN VOLTAGE Vgqg (V) Yis, Yos f COMMON SOURCE Vpg=10V 8 tof Vas=ov a Ta=25C E = & a 3 Qs FE ow BE wm 3b a 0.5 = 2 0.3 0.1 10 30 50 100 300 500 1000 3000 FREQUENCY f (MHz) Yis VDS D=10mA 2 |6 COMMON SOURCE f=100MHz S He Ta=25C INPUT ADMITTANCE Yis (mS) 2 _ co Oo 4 6 8 10 12 14 16 18 DRAIN-SOURCE VOLTAGE Vpg (V) (pF) INPUT CAPACITANCE Cigs (mS) FORWARD, REVERSE TRANSFER ADMITTANCE Yfs, Yrs OUTPUT ADMITTANCE Yos (mS) 2SK210 Ciss VGS COMMON SOURCE Vps=0v f=1MHz Ta=25C 0 -1 2 3 4 GATE-SOURCE VOLTAGE Vag (V) Yfs, Yrg f COMMON SOURCE Vps=10V, Vag=0V Ta=25C wl 10 30 50 100 300 500 1000 3000 FREQUENCY f (MHz) Yos VDS COMMON SOURCE f=100MHz Ta=25C 4 6 8 10 12 14 16 18 DRAIN-SOURCE VOLTAGE Vpg (V) 1998-10-28 4/5 TOSHIBA 2SK210 9 Yfs, Yrs VDS Pp Ta 4 COMMON SOURCE 5 f=100MHz = Ta=25C Z z p=10mA(L g < a1 g Be oe Be z- as ee At By 2 Bu is B g is z g <br 5 << = S e 4 6 8 10 12 14 16 18 0 50 100 150 200 DRAIN-SOURCE VOLTAGE Vpg (V) AMBIENT TEMPERATURE Ta (C) 1998-10-28 5/5