Document Number: 94133 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 14-Jan-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
Schottky Rectifier, 2 x 6 A
VS-12CWQ04FNPbF
Vishay Semiconductors
FEATURES
Popular D-PAK outline
Center tap configuration
Small foot print, surface mountable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Compliant to RoHS Directive 2002/95/EC
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DESCRIPTION
The VS-12CWQ04FNPbF surface mount, center tap,
Schottky rectifier series has been designed for applications
requiring low forward drop and small foot prints on PC
board. Typical applications are in disk drives, switching
power supplies, converters, freewheeling diodes, battery
charging, and reverse battery protection.
PRODUCT SUMMARY
Package D-PAK (TO-252AA)
IF(AV) 2 x 6 A
VR40 V
VF at IF0.48 V
IRM 40 mA at 125 °C
TJ max. 150 °C
Diode variation Common cathode
EAS 9 mJ
Base
common
cathode
Common
cathode
2
4
13
Anode Anode
D-PAK (TO-252AA)
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 12 A
VRRM 40 V
IFSM tp = 5 μs sine 550 A
VF6 Apk, TJ = 125 °C (per leg) 0.48 V
TJRange - 55 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-12CWQ04FNPbF UNITS
Maximum DC reverse voltage VR40 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
See fig. 5
per leg
IF(AV) 50 % duty cycle at TC = 134 °C, rectangular waveform
6
A
per device 12
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
5 μs sine or 3 μs rect. pulse Following any rated
load condition and with
rated VRRM applied
550
A
10 ms sine or 6 ms rect. pulse 90
Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 1.5 A, L = 8 mH 9 mJ
Repetitive avalanche current per leg IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 1.2 A
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94133
2DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 14-Jan-11
VS-12CWQ04FNPbF
Vishay Semiconductors Schottky Rectifier, 2 x 6 A
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
Note
(1) thermal runaway condition for a diode on its own heatsink
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward
voltage drop per leg
See fig. 1
VFM (1)
6 A TJ = 25 °C 0.53
V
12 A 0.68
6 A TJ = 125 °C 0.48
12 A 0.64
Maximum reverse
leakage current per leg
See fig. 2
IRM (1)
TJ = 25 °C
VR = Rated VR
3
mA
TJ = 125 °C 40
Threshold voltage VF(TO) TJ = TJ maximum 0.28 V
Forward slope resistance rt25.58 m
Typical junction capacitance per leg CTVR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 405 pF
Typical series inductance per leg LSMeasured lead to lead 5 mm from package body 5.0 nH
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and srorage
temperature range TJ (1), TStg - 55 to 150 °C
Maximum thermal resistance,
junction to case
per leg RthJC
DC operation
See fig. 4
3.0 °C/W
per device 1.5
Approximate weight 0.3 g
0.01 oz.
Marking device Case style D-PAK (similar to TO-252AA) 12CWQ04FN
dPtot
dTJ
------------- 1
RthJA
--------------<
Document Number: 94133 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 14-Jan-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
VS-12CWQ04FNPbF
Schottky Rectifier, 2 x 6 A Vishay Semiconductors
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
1
10
100
IF - Instantaneous Forward
Current (A)
VFM - Forward Voltage Drop (V)
0.4 0.8 1.2 2.2
1.41.00.6
0.2
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
0 1.6 1.8 2.0
IR - Reverse Current (mA)
VR - Reverse Voltage (V)
0 102030
0.001
0.1
1
10
100
540
0.01
352515
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
CT - Junction Capacitance (pF)
VR - Reverse Voltage (V)
02030
40 45
100
1000
10
TJ = 25 °C
515
25 35
ZthJC - Thermal Impedance (°C/W)
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
0.00001 0.0001 0.001 0.01 0.1 1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
PDM
t1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94133
4DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 14-Jan-11
VS-12CWQ04FNPbF
Vishay Semiconductors Schottky Rectifier, 2 x 6 A
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Allowable Case Temperature (°C)
IF(AV) - Average Forward Current (A)
0894
115
125
130
140
150
155
26
DC
See note (1)
Square wave (D = 0.50)
80 % rated VR applied
1357
120
135
145
0
Average Power Loss (W)
IF(AV) - Average Forward Current (A)
046 9
1
2
3
4
5
28
RMS limit
DC
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
1357
I
FSM
- Non-Repetitive Surge Current (A)
t
p
- Square Wave Pulse Duration (µs)
100
1000
10 100 1000 10 000
At any rated load condition
and with rated V applied
following surge RRM
10
Document Number: 94133 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 14-Jan-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 5
VS-12CWQ04FNPbF
Schottky Rectifier, 2 x 6 A Vishay Semiconductors
ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95016
Part marking information www.vishay.com/doc?95059
Packaging information www.vishay.com/doc?95033
2- Current rating (12 A)
1- Vishay Semiconductors product
3- Center tap configuration-
4
4- Package identifier:
W = D-PAK
5- Schottky “Q” series
6- Voltage rating (04 = 40 V)
7- FN = TO-252AA
8- None = Tube (50 pieces)
TR = Tape and reel
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
- PbF = Lead (Pb)-free
9
Device code
51 32 4 6 7 8 9
12VS- C W Q 04 FN TRL PbF
Ø 1
E
(5)
b3 (3) 0.010 CAB
L3 (3)
B
AC
H
C
L2
D (5)
L4
b
2 x e
b2
(2) L5
123
4
Ø 2
A
c2 A
A
H
Seating
plane
c
Detail “C”
(7)
Seating
plane
A1
Detail “C”
Rotated 90 °CW
Scale: 20:1
(L1)
C
C
L
Ø
Gauge
plane
Lead tip
M
0.010 CAB
M
32
4
1
E1
D1
MIN.
0.265
(6.74)
MIN.
0.245
(6.23)
MIN.
0.089
(2.28)
MIN.
0.06
(1.524)
0.488 (12.40)
0.409 (10.40)
0.093 (2.38)
0.085 (2.18)
Pad layout
Legal Disclaimer Notice
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Revision: 13-Jun-16 1Document Number: 91000
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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