-TRF820,621 POWER: MOS [FET [pescrekt FIELD EFFECT POWER TRANSISTOR | to. ovocts RpS(ON) = 3.0 2 This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology N-CHANNEL to achieve low on-resistance with excellent device rugged- ness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. omc so ES) Also, the extended safe operating area with good linear soauoge 18295) sora os transfer characteristics makes it well suited for many linear jr sooth ior T70(4.32)(" oy" ba SESH 38 applications such as audio amplifiers and servo motors. C_ |B oe + ata) A Features / : t i TEMPERATURE | ili ili reliabili 38518. Polysilicon gate Improved stability and reliability 4509681, + ge5i0.02) = No secondary breakdown Excellent ruggedness | ) + 130(3.3) > Bee Ultra-fast switching Independent of temperature Ad a | [covers TERM.1 Voltage controlled High transconductance rea | oss a8 | Low input capacitance Reduced drive requirement TeRw3~| a . 033(0.84) { 105(2.67) 4 |. 10712.72) e Excellent thermal stability Ease of paralleling 0270.68) ee 0950.41) rm 08712.29) seit age SBR UNIT TYPE |TERM.1TERM.2| TERM.3 TAB POWER MOS FET|1T0-220-AB] GATE |QRAIN|SOURCE| ORAIN maximum ratings (Tc = 25C) (unless otherwise specified) RATING SYMBOL IRF8&20/D84CR2 IRF821/D84CR1 UNITS Drain-Source Voltage Voss 500 450 Volts Drain-Gate Voltage, Ras = MQ VpGR 500 450 Volts Continuous Drain Current @ To = 25C Ip 2.5 2.5 A @ Tc = 100C 1.5 1.5 A Pulsed Drain Current lpm 10 10 A Gate-Source Voltage Ves +20 +20 Volts Total Power Dissipation @ Tc = 25C Pp 40 40 Watts Derate Above 25C 0.32 0.32 Ww/G Operating and Storage Junction Temperature Range Ty, Tsta -55 to 150 ~55 to 150 C thermal characteristics Thermal Resistance, Junction to Case Rec 3.12 3.12 C/W Thermal Resistance, Junction to Ambient Raya 80 80 C/W Maximum Lead Temperature for Soldering Purposes: % from Case for 5 Seconds TL 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 221 electrical characteristics (Tc = 25C) (unless otherwise specified) | CHARACTERISTIC | SYMBOL | MIN | TYP | MAX | UNIT | off characteristics Drain-Source Breakdown Voltage {RF820/D84CR2 BVoss 500 _ _ Volts (Ves = OV, Ip = 250 wA) IRF821/D84CR1 450 _ _ Zero Gate Voltage Drain Current lpss (Vps = Max Rating, Vag = OV, Tc = 25C) _ _ 250 uA (Vps = Max Rating, 0.8, Vag = OV, To = 125C) _ _ 1000 Gate-Source Leakage Current on characteristics* Gate Threshold Voltage To = 25C | Ves(TH) 2.0 _ 4.0 Volts (Vps = Ves, Ip = 250 nA) On-State Drain Current \ 25 _ _ A (Vgg = 10V, Vps = 10V) D(ON) " Static Drain-Source On-State Resistance (Vag = 10V, Ip = 1.0A) RDS(ON) 2.5 3.0 Ohms Forward Transconductance (Vpg = 10V, Ip = 1.0A) Sts 0.8 1 mhos dynamic characteristics Input Capacitance Vag = 10V Ciss _ 380 400 pF Output Capacitance Vps = 25V Coss _ 60 150 pF Reverse Transfer Capacitance f= 1 MHz Crss _ 10 40 pF switching characteristics* Turn-on Delay Time Vos = 225V ta(on) _ 16 _ ns Rise Time Ip = 1.0A, Vag = 15V tr 10 _ ns Turn-off Delay Time Raen = 500, Reg = 12.52 ta (off) _ 30 ns Fall Time (Res (EQuiv.) = 100) tt _ 25 _ ns source-drain diode ratings and characteristics* Continuous Source Current Is _ ~~ 2.5 A Pulsed Source Current Ism _ ~ 10.0 A Diode Forward Voltage _ (To = 28C, Vas = OV, Ig = 2.5A) VsD 0.8 14 Volts Reverse Recovery Time ter _ 410 _ ns (Ig = 2.5A, dig/dt = 100A/usec, To = 125C) Qrar _ 2.4 uC *Pulse Test: Pulse width = 300 us, duty cycle <= 2% 100 80 60 40 gq 20 w 4 # 10 3 8 ~ 6 Ee 4 & > 2 o Zz < 10 = os 3 0.6 RATION JN THIS AREA 04 MAY BE LIMITED BY Rogiony | SINGLE PULSE Ty = 25C o1 1 2 4 6 810 20 40 60 80100 Vpg, DRAINSOURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA 200 400 600 1000 222 CONDITIONS: Rps(ON) CONDITIONS: Ip = 1.0 A, Vag = 10V V@g(TH) CONDITIONS: Ip = 250uA, Vg = Vag Rosion) AND Vegipy) NORMALIZED 40 9 40 80 T,. JUNCTION TEMPERATURE (C) TYPICAL NORMALIZED Rogion, AND Vogir1 VS. TEMP. 120 160