1
File Number 4444.2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 |Copyright © Intersil Corporation 2000
HGTG30N60B3
60A, 600V, UFS Series N-Channel IGBT
The HGTG30N60B3 is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25oC and 150oC.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49170.
Symbol
Features
• 60A, 600V, TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
Packaging JEDEC STYLE TO-247
Ordering Information
PART NUMBER PACKAGE BRAND
HGTG30N60B3 TO-247 G30N60B3
NOTE: When ordering, use the entire part number.
C
E
G
G
C
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
Data Sheet January 2000
2
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG30N60B3 UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 600 V
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC25 60 A
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 30 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 220 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 60A at 600V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD208 W
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67 W/oC
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EARV 100 mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL260 oC
Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 4µs
Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 10 µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = 125oC, RG = 3Ω.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 600 - - V
Emitter to Collector Breakdown Voltage BVECS IC = 10mA, VGE = 0V 15 28 - V
Collector to Emitter Leakage Current ICES VCE = BVCES TC = 25oC - - 250 µA
TC = 150oC - - 3.0 mA
Collector to Emitter Saturation Voltage VCE(SAT) IC = IC110,
VGE = 15V TC = 25oC - 1.45 1.9 V
TC = 150oC - 1.7 2.1 V
Gate to Emitter Threshold Voltage VGE(TH) IC = 250µA, VCE = VGE 4.5 5.0 6.0 V
Gate to Emitter Leakage Current IGES VGE = ±20V - - ±250 nA
Switching SOA SSOA TJ = 150oC,
RG = 3Ω,
VGE = 15V
L = 100µH,
VCE (PK) = 480V 200 - - A
VCE (PK) = 600V 60 - - A
Gate to Emitter Plateau Voltage VGEP IC = IC110, VCE = 0.5 BVCES - 7.2 - V
On-State Gate Charge QG(ON) IC = IC110,
VCE = 0.5 BVCES VGE = 15V - 170 190 nC
VGE = 20V - 230 250 nC
Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 25oC
ICE = IC110
VCE = 0.8 BVCES
VGE = 15V
RG= 3Ω
L = 1mH
Test Circuit (Figure 17)
-36- ns
Current Rise Time trI -25- ns
Current Turn-Off Delay Time td(OFF)I - 137 - ns
Current Fall Time tfI -58- ns
Turn-On Energy (Note 4) EON1 - 500 - µJ
Turn-On Energy (Note 4) EON2 - 550 800 µJ
Turn-Off Energy (Note 3) EOFF - 680 900 µJ
HGTG30N60B3
3
Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 150oC
ICE = IC110
VCE = 0.8 BVCES
VGE = 15V
RG= 3Ω
L = 1mH
Test Circuit (Figure 17)
-32- ns
Current Rise Time trI -24- ns
Current Turn-Off Delay Time td(OFF)I - 275 320 ns
Current Fall Time tfI - 90 150 ns
Turn-On Energy (Note 4) EON1 - 500 - µJ
Turn-On Energy (Note 4) EON2 - 1300 1550 µJ
Turn-Off Energy (Note 3) EOFF - 1600 1900 µJ
Thermal Resistance Junction To Case RθJC - - 0.6 oC/W
NOTES:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 17.
Typical Performance Curves Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
TC, CASE TEMPERATURE (oC)
ICE, DC COLLECTOR CURRENT (A)
50
10
0
40
20
30
50
60 VGE = 15V
25 75 100 125 150
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
125
700
75
0
ICE, COLLECTOR TO EMITTER CURRENT (A)
25
50
300 400
200
100 500 600
100
0
150
175
200
225 TJ= 150oC, RG = 3Ω, VGE = 15V, L =100µH
fMAX, OPERATING FREQUENCY (kHz)
5
ICE, COLLECTOR TO EMITTER CURRENT (A)
1
0.1
10
6020 40
100
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
RØJC = 0.6oC/W, SEE NOTES
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
fMAX2 = (PD- PC) / (EON2 + EOFF)
TCVGE
110oC10V
15V
15V
75oC
110oC
75oC10V
10
VCE = 480V
TJ= 150oC, RG = 3Ω, L = 1mH,
VGE, GATE TO EMITTER VOLTAGE (V)
ISC, PEAK SHORT CIRCUIT CURRENT (A)
tSC, SHORT CIRCUIT WITHSTAND TIME (µs)
10 11 12 13 14 15
6
8
10
12
16
20
14
150
200
250
300
350
400
500
tSC
ISC
18 450
VCE = 360V, RG = 3Ω, TJ = 125oC
HGTG30N60B3
4
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves Unless Otherwise Specified (Continued)
024
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
25
50
75
6810
150
125
100 TC = 25oC
175 TC = -55oC
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, V GE = 10V
225
200
TC = 150oC
ICE, COLLECTOR TO EMITTER CURRENT (A)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
200
250
300
350
012
0
150
345
100
50
DUTY CYCLE <0.5%, VGE = 15V
PULSE DURATION = 250µs
TC = -55oC
TC = 150oC
TC = 25oC
67
EON2, TURN-ON ENERGY LOSS (mJ)
5
3
ICE, COLLECTOR TO EMITTER CURRENT (A)
4
2
1
4020 60503010
6
0
TJ = 25oC, TJ = 150oC, VGE = 10V
RG = 3Ω, L = 1mH, VCE = 480V
TJ = 25oC, TJ = 150oC, VGE = 15V
ICE, COLLECTOR TO EMITTER CURRENT (A)
EOFF, TURN-OFF ENERGY LOSS (mJ)
0
0.5
503020 40 6010
1.0
2.5
RG = 3Ω, L = 1mH, VCE = 480V
TJ = 150oC, VGE = 10V OR 15V
TJ = 25oC, VGE = 10V OR 15V
2.0
1.5
3.0
3.5
4.0
4.5
ICE, COLLECTOR TO EMITTER CURRENT (A)
tdI, TURN-ON DELAY TIME (ns)
2010 30 50
25
30
35
40
45
50
40
55
60
TJ = 25oC, TJ = 150oC, VGE = 10V
TJ = 25oC, TJ = 150oC, VGE = 15V
RG = 3Ω, L = 1mH, VCE = 480V
ICE, COLLECTOR TO EMITTER CURRENT (A)
trI, RISE TIME (ns)
20
0
50
250
200
100
6010
150
504030
RG = 3Ω, L = 1mH, VCE = 480V
TJ = 25oC, TJ = 150oC, VGE = 10V
TJ = 25oC, TJ = 150oC, VGE = 15V
HGTG30N60B3
5
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
Typical Performance Curves Unless Otherwise Specified (Continued)
20 30 6010
250
300
5040
100
200
150
ICE, COLLECTOR TO EMITTER CURRENT (A)
td(OFF)I, TURN-OFF DELAY TIME (ns)
TJ = 25oC, VGE = 10V, VGE = 15V
TJ = 150oC, VGE = 10V, VGE = 15V
RG = 3Ω, L = 1mH,
VCE = 480V
ICE, COLLECTOR TO EMITTER CURRENT (A)
tfI, FALL TIME (ns)
20 30 6010
40
100
120
5040
60
80
TJ = 150oC, VGE = 10V AND 15V
TJ = 25oC, VGE = 10V AND 15V
RG = 3Ω, L = 1mH, VCE = 480V
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
50
100
150
5 789106
VGE, GATE TO EMITTER VOLTAGE (V)
11
200
250
300
4
TC = 150oC
TC = 25oC
TC = -55oC
DUTY CYCLE <0.5%, VCE = 10V
PULSE DURATION = 250µs
QG, GATE CHARGE (nC)
0
8
10
6
4
2
050
VGE, GATE TO EMITTER VOLTAGE (V)
VCE = 400V
VCE = 600V
150 200100
12
14
16
VCE = 200V
Ig (REF) = 1mA, RL = 10Ω, TC= 25oC
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
0 5 10 15 20 25
0
C, CAPACITANCE (nF)
2
4
6
8
10
CIES
COES
CRES
FREQUENCY = 1MHz
HGTG30N60B3
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FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 18. SWITCHING TEST WAVEFORMS
Typical Performance Curves Unless Otherwise Specified (Continued)
ZθJC, NORMALIZED THERMAL RESPONSE
t1, RECTANGULAR PULSE DURATION (s)
10-5 10-3 100101
10-4
t1
t2
PD
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PDX ZθJC X RθJC) + TC
10-1
10-2
SINGLE PULSE
100
10-1
10-2
0.50
0.20
0.05
0.01
0.10
0.02
RG = 3Ω
L = 1mH
VDD = 480V
+
-
HGTP30N60B3D
tfI
td(OFF)I trI
td(ON)I
10%
90%
10%
90%
VCE
ICE
VGE
EOFF
EON2
HGTG30N60B3
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All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gate-
insulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through
the device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. td(OFF)I and td(ON)I are defined in Figure 18.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJM. td(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The
allow ab le dissipation (PD) is defined by PD=(T
JM -T
C)/RθJC.
The sum of device switching and conduction losses must
not exceed PD. A 50% duty factor was used (Figure 3) and
the conduction losses (PC) are approximated by
PC=(V
CE xI
CE)/2.
EON2 and EOFF are defined in the switching waveforms
shown in Figure 18. EON2 is the integral of the
instantaneous power loss (ICE x VCE) during turn-on and
EOFF is the integral of the instantaneous power loss
(ICE xV
CE) during turn-off. All tail losses are included in the
calculation for EOFF; i.e., the collector current equals zero
(ICE = 0).
HGTG30N60B3
ECCOSORBD™ is a trademark of Emerson and Cumming, Inc.
