=hr= SEME LAB MECHANICAL DATA Dimensions in mm (inches) 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655) ~ 4.09 (0.161) 3.84 (0.151) dia. 2 ples. 26.67 (1.050) max, 20.32 (0.800) 18.80 (0.740) dia. 1.57 (0.062) Ss t 1.47 (0.058) > dia. i 2 ples. CD TO-3 Metal Package Pin 2 Source 7.87 (0.310 6.99 (0.275 1.78 (0.070) 1.52 (0.060) > < 0.475 0.445 12.07 11.30 Pin 1 Gate Case Drain IRF250 N-CHANNEL POWER MOSFET Voss 200V lp(cont) 30A Rpsion) :0-085Q FEATURES * HERMETICALLY SEALED TO-3 METAL PACKAGE SIMPLE DRIVE REQUIREMENTS SCREENING OPTIONS AVAILABLE ABSOLUTE MAXIMUM RATINGS (T,,5. = 25C unless otherwise stated) Ves Gate Source Voltage +20V Ip Continuous Drain Current (Vag =9, Tease = 25C) 30A Ip Continuous Drain Current (Vag =9, Tease = 100C) 19A lou Pulsed Drain Current 1 120A Pp Power Dissipation @ Toase = 25C 150W Linear Derating Factor 1.2W/C Eas Single Pulse Avalanche Energy 2 200mJ laR Avalanche Current 2 30A Ear Repetitive Avalanche Energy 2 15mJ dv/dt Peak Diode Recovery 3 5V/ns Ty, Tstg Operating and Storage Temperature Range 55 to +150C TL Lead Temperature 1.6mm (0.63) from case for 10 sec. 300C Notes 1) Pulse Test: Pulse Width < 300us, 5 < 2%. 2) @ Vpp = 50V,, L>330mMH , Re = 25, Peak |, = 30A, Starting Ty = 25C. 3) @ Igp < 30A, di/dt < 190A/Us , Vpp < BVpsg , Ty < 150C , Suggested Rg = 2.350 Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 9/96 =r= SEME LAB IRF250 ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min. | Typ. | Max. | Unit STATIC ELECTRICAL RATINGS BVpsg Drain Source Breakdown Voltage | Veg =0 Ip = 1mA 200 Vv ABV Temperature Coefficient of Reference to 25C ss em 0.029 vic AT, Breakdown Voltage Ip = 1mA Static Drain Source OnState Veg = 10V Ip = 19A 0.085 Rpg(on) . 1 _ _ Resistance Veg = 10V Ip = 30A 0.090 Vesithy Gate Threshold Voltage Vos = Vas Ip = 250mA 2 4 Vv Dts Forward Transconductance 1 Vps > 15V Ip = 19A 9 S (0) | Zero Gate Voltage Drain Current A pss 9 Ty = 125C 250 | > less Forward Gate Source Leakage Veg = 20V 100 nA less Reverse Gate Source Leakage Veg = -20V 100 DYNAMIC CHARACTERISTICS Ciss Input Capacitance Veg =0 3500 Coss Output Capacitance Vps = 25V 700 pF Criss Reverse Transfer Capacitance f = 1MHz 110 Qg Total Gate Charge Veg = 10V 55 115 Qgs Gate Source Charge Ip = 30A 8 22 nc Qga Gate Drain (Miller) Charge Vps = 0.5BVpss 30 60 t TurnOn Delay Time 35 don) ey Vpp = 100V t Rise Time 190 , Ip = 30A ns taor) TurnOff Delay Time 170 ; Re = 2.350 t Fall Time 130 SOURCE DRAIN DIODE CHARACTERISTICS Is Continuous Source Current 30 A Ism Pulse Source Current 2 120 ; lg = 30A Ty = 25C Vsp Diode Forward Voltage 1 1.9 V Vas = 0 ter Reverse Recovery Time Ip = 30A Ty = 25C 950 ns Qr Reverse Recovery Charge 1 dj/d,< 100A/us Vpp < 50V 9.0 uC ton Forward TurnOn Time Negligible PACKAGE CHARACTERISTICS Lp Internal Drain Inductance (measured from 6mm down drain lead to centre of die) 5.0 nH Ls Internal Source Inductance (from 6mm down source lead to source bond pad) 13 THERMAL CHARACTERISTICS Rejc Thermal Resistance Junction Case 0.83 Recs Thermal Resistance Case Sink 0.12 C/W Roya Thermal Resistance Junction Ambient 30 Notes 1) Pulse Test: Pulse Width < 300ms, 6< 2% 2) Repetitive Rating Pulse width limited by maximum junction temperature. Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 9/96