221 West Industry Court 3 Deer Park, NY 11729-4681 3 Phone (631) 586 7600 Fax (631) 242 9798
World Wide Web - www.sensitron.com E-mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 193, REV. B
HERMETIC AXIAL LEAD / MELF
SCHOTTKY BARRIER DIODE
DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE.
MAXIMUM RATINGS All ratings are at TA = 25oC unless otherwise specified.
RATING CONDITIONS MIN TYP MAX UNIT
Peak Inverse Voltage
(PIV)
- - 45 Vdc
Average DC Output
Current (Io)
- - 1.0 Amps
Peak Single Cycle Surge
Current (Ifsm)tp = 8.3 ms Single
Half Cycle Sine
Wave,
Superimposed On
Rated Load
- - 25 Amps(pk)
Thermal Resistance (
JL)Junction to Lead
d = 0.375” - - 70 C/W
Thermal Resistance (qJEC)Junction to Endcap - - 40 C/W
Junction Temperature (TJ) - -55 - +125 C
Operating Temperature
(Top)
- -55 - +125 C
Storage Temp. (Tstg) - -55 - +150 C
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC CONDITIONS MIN TYP MAX UNIT
Maximum Forward
Voltage (Vf)IF = 1.0A (300 msec
pulse, duty cycle <
2%)
- - 0.49 Volts
Maximum Instantaneous
Reverse Current At Rated
(PIV)
TA = 25 C
TA = 100 C
- - 0.05
4.0 mAmps
mAmps
Junction Capacitance (CJ) VR = 5 Vdc
0.01 f 1MHz
Vsig = 15 mV p-p - - 70 pF
Notes: - All ratings are at TA = 25
C unless otherwise specified.
- Maximum storage temperature range: -55
C to +150
C.
- Maximum operating temperature range: -55
C to +125
C (1N5819-1, 1N5819UR-1).
Derate linearly at 4.5 V/
C above TL or TEC = +100
C (1N5819-1), where TEC is at L = .375 inch.
Derate linearly at 14 mA/
C above TL or TEC = +55
C (1N5819-1), where TEC is at L = .375 inch.
1N5819-1
1N5819UR-1
JAN
JANTX
JANTXV
221 West Industry Court 3 Deer Park, NY 11729-4681 3 Phone (631) 586 7600 Fax (631) 242 9798
World Wide Web - www.sensitron.com E-mail Address - sales@sensitron.com
SENSITRON
TECHNICAL DATA
DATA SHEET 193, REV. A
AXIAL MELF
SCHOTTKY BARRIER 1N5819-1 SCHOTTKY BARRIER 1N5819UR-1
PACKAGE DIMENSIONS - INCHES ( MILLIMETERS) PACKAGE DIMENSIONS - INCHES ( MILLIMETERS)
STYLE
B
DG L STYLE A B C D
DO-41 .028/.034
0.71/0.86 .08/.107
2.03/2.72 .160/.205
4.06/5.21 1.00/1.30
25.4/33.02 DO-213AB .189/.205
4.80/5.21 .016/.022
0.41/0.56 0.001 Min
0.03 Min .094/.105
2.39/2.67
1N5819-1
1N5819UR-1
0.0 0.1 0.2 0.3 0.4 0.5 0.6
Forward Voltage Drop - V F (V)
10-3
10-2
10-1
100
Instantaneous Forward Current - I
F
(A)
Typical Forward Characteristics
100 °C
125 °C
25 °C
0 10 20 30 40 50 60
Reverse Voltage - V R (V)
10-3
10-2
10-1
100
101
102
Instantaneous Reverse Current - I
R
(mA)
Typical Reverse Characteristics
25 °C
50 °C
75 °C
100 °C
125 °
C
150 °C
0 10 20 30 40 50 60
Reverse Voltage - V R (V)
10
20
30
40
50
Junction Capacitance - C
T
(pF)
Typical Junction Capacitance
221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798
World Wide Web - http://www.sensitron.com E-Mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
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1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
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medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement.
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operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that ma y result from applications of information, products or circuits described in the datasheets.
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use at a value exceeding the absolute maximum rating.
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