& HERMETIC SILICON OPTOELECTRONICS PHOTODARLINGTON BPW38 L- pd -- The BPW38 is a silicon photodarlington mounted in a b- pol 4 narrow angle TO-18 package. _| P SEATING PLANE h te ae L ord of SyMBOL|__INCHES | MILLIMETERS |) 47 p< = Hermetically sealed package MIN. | MAX. [ MIN. | MAX. A__| 225 | 255 | 5.71 | 6.47 wb | 016 | .o2t | 407 | 533 m European Pro Electron registered @b__| 209 | 230 | 531 | 5.84 @D, | .178 | .195 | 4.52 | 4.96 m@ Narrow reception angle e -100 NOM 2.54 NOM 2 6, .050 NOM 1.27 NOM 2 h = .030 = 76 j 036 | .046 92 | 1.16 k 028 | .048 71 _| 1.22 1 L .500 = 12.7 = w 45 45 45 45 3 PACKAGE OUTLINE 3c ST1606 NOTES: 1. MEASURED FROM MAXIMUM DIAMETER OF DEVICE. 2. LEADS HAVING MAXIMUM DIAMETER .021 (.533mm) MEASURED IN GAUGING PLANE .054 + .001 .000 (137 + .025 .000mm) BELOW THE REFERENCE PLANE OF THE DEVICE SHALL BE WITHIN .007 (778mm) THEIR TRUE POSITION RELATIVE TO MAXIMUM WIDTH TAB. 3. FROM CENTERLINE TAB. & HERMETIC SILICON OPTOELECTROWICS PHOTODARLINGTON Storage Temperature 65C to +150C Operating Temperature 20... cece cece eee eee cen erent ene beeenenes 65C to +125C Soldering: Lead Temperature (IFOM) 60... . icc cece cece cate ne bette nneeenes 240C for 5 sec.845 Lead Temperature (Flow) 2.0.60. c cece eect ent erateenees 260C for 10 sec.* Collector-Emitter Breakdown Voltage .. 02.0.0. e cere e tenet neve eune tee eneens 25 Volts Collector-Base Breakdown Voltage 2.6.6... cece ccc ee teen eee tect e tet n tect eeveeuentnes 25 Volts Emitter-Base Breakdown Voltage ....0 2... ccc ccc ccc eee ec eet e nett ve tntenereueenennes 12 Volts Power Dissipation (T, = 25C) 2.0.00... cece ccc vnc eee eeeeeennnetuunnnnnnys 300 mW Power Dissipation (Tc = 25C) 2.0 n cent b neta tee tnetrtnttneneens 600 mw PARAMETER SYMBOL MIN. . . TEST CONDITIONS Collector-Emitter Breakdown BV ceo 25 V |; = 10 mA, Ee = 0 Emitter-Base Breakdown BV eso 12 Vv |. = 100 pA, Ee = 0 Collector-Base Breakdown BV cso 25 Vv le = 100 vA, Ee = 0 Collector-Emitter Leakage loca nA Vee = 12 V, Ee =0 Reception Angle at 2 Sensitivity 6 Degrees On-State Collector Current legen . mA Ee = .05 mW/cm?, Vo. = 5 V7 Rise Time t Bs I, = 10 MA, Vc = 10 V, R, = 1000, Fall Time t us I, = 10 MA, Voc = 10 V, R, = 1002 . Derate power dissipation linearly 3.00mW/C above 25C ambient. Derate power dissipation linearly 6.00mW/C above 25C case. RMA flux is recommended. .. Methanol or Isopropyl alcohols are recommended as cleaning agents. . Soldering iron tip 4s" (1.6 mm) minimum from housing. . As long as leads are not under any stress or spring tension. . Light source is a GaAs LED emitting light at a peak wavelength of 940 nm. . Figure 7 and figure 2 use light source of tungsten lamp at 2870K color temperature. A GaAs source of 0.05 mW/cr is approximately equivalent to a tungsten source, at 2870K, of 0.2 mW/enr. ANDaASM foo & HERMETIC SILICON DPTOELECTRONICS PHOTODARLINGTON Vee * SY Ee = .2mW/cem2 NORMALIZED TO: Vee = BV Ee = .2mW/cem2 Ol 5 10 15 20 25 30 35 -50 -26 oO 25 50 75 (00 125 Voce - COLLECTOR TO EMITTER ~ VOLTS T - TEMPERATURE - C T . di . sT Fig. 1. Light Current vs. Collector to Emitter Voltage ST1260 Fig. 2. Relative Light Current vs. Ambient Temperature IL - NORMALIZED LIGHT CURRENT I, /1_ @ 25C - RELATIVE LIGHT CURRENT 1265 2 io 2 N QD g a as 3 Q a 2 9 ow 2 wo - ao ao oOo 9o 2 nN Ww a z Oo a w a o Ww 2 = E a Z z e 3 gos S a = z Ww < y a bE a t lt Ww & - o 600 700 800 900 1000 oo (200 -70 =-80 -30 = -10 lo 30 so 70 90 X- WAVELENGTH - NANOMETERS DEGREES Fig. 3. Spectral Response Curve ST1261 Fig. 4. Angular Response ST'264 NORMALIZED TO: R, = 1008 In = 10mA 90% OUTPUT Ty - LIGHT CURRENT - mA RL OUTPUT #o Sineur PULSE = ton = ta + t, torr = ty + te Ol T1262 9.01 Veo = 10V aul 1.0 10 100 RELATIVE SWITCHING SPEEDO tat tr tte + te Fig. 5. Test Circuit and Voitage Waveforms Fig. 6. Light Current vs. Relative Switching Speed S78