NTE98 Silicon NPN Transistor HV Darlington Power Amp, Switch Description: The NTE98 is a silicon NPN Darlington transistor in a TO3 type package designed for high voltage, high-speed, power switching in inductive circuits where fall-time is critical. They are particularly suited for line operated switch-mode applications. Applications: D Switching Regulators D Inverters D Solenoid and Relay Drivers Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Collector-Emitter Voltage, VCEX(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Collector-Emitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Base Current, IB Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175W Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/C Total Power Dissipation (TC = +100C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0C/W Lead Temperature (During Soldering, 1/8" from case, 5sec), TL . . . . . . . . . . . . . . . . . . . . . . . +275C Note 1. Pulse test: Pulse Width = 5ms, Duty Cycle 10%. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCEO(sus) IC = 100mA, IB = 0, Vclamp = 500V 500 - - V VCEX(sus) IC = 2A, Vclamp = 500V, TC = +100C 500 - - V IC = 5A, Vclamp = 500V, TC = +100C 375 - - V VCEV = 700V, VBE(off) = 1.5V - - 0.25 mA VCEV = 700V, VBE(off) = 1.5V, TC = +150C - - 5.0 mA ICER VCE= 700V, RBE= 50, TC = +100C - - 5.0 mA IEBO VEB = 2V, IC = 0 - - 175 mA hFE VCE = 5V, IC = 5A 40 - 400 VCE = 5V, IC = 10A 30 - 300 IC = 10A, IB = 500mA - - 2.0 V IC = 10A, IB = 500mA, TC = +100C - - 2.5 V IC = 20A, IB = 2A - - 3.5 V IC = 10A, IB = 500mA - - 2.5 V IC = 10A, IB = 500mA, TC = +100C - - 2.5 V VF IF = 5A, Note 3 - 3 5 V Small-Signal Current Gain hfe VCE = 10V, IC = 1A, ftest = 1MHz 8 - - Output Capacitance Cob VCB = 50V, IE = 0, ftest = 100kHz 100 - 325 pF - 0.12 0.25 s - 0.5 1.5 s OFF Characteristics (Note 2) Collector-Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current ICEV ON Characteristics (Note 3) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Diode Forward Voltage VCE(sat) VBE(sat) Dynamic Characteristics Switching Characteristics (Resistive Load) Delay Time td Rise Time tr Storage Time ts - 0.8 2.0 s Fall Time tf - 0.2 0.6 s IC = 10A Peak, Vclamp = 250V, IB1 = 500mA, VBE(off) = 5V, TC = +100C - 1.5 3.5 s - 0.36 1.6 s IC = 10A Peak, Vclamp = 250V, IB1 = 500mA, VBE(off) = 5V, TC = +25C - 0.8 - s - 0.18 - s VCC = 250V, IC = 10A, IB1 = 500mA, VBE(off) = 5V, tp = 50s, Duty Cycle 2% Switching Characteristics (Inductive Load, Clamped) Storage Time tsv Crossover Time tc Storage Time tsv Crossover Time tc Note 2. Pulse test: Pulse Width = 300s, Duty Cycle 2%. Note 3. The internal Collector-Emitter diode can eliminate the need for an external diode to clamp inductive loads. Tests have shown that the Forward Recovery Voltage (VF) of this diode is comparable to that of typical fast recovery rectifiers. C B E .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .040 (1.02) 1.187 (30.16) .665 (16.9) .215 (5.45) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case