NTE98
Silicon NPN Transistor
HV Darlington Power Amp, Switch
Description:
The NTE98 is a silicon NPN Darlington transistor in a TO3 type package designed for high voltage,
high–speed, power switching in inductive circuits where fall–time is critical. They are particularly
suited for line operated switch–mode applications.
Applications:
DSwitching Regulators
DInverters
DSolenoid and Relay Drivers
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO(sus) 500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, VCEX(sus) 500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, VCEV 700V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEB 8V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
Continuous 20A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1) 30A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, IB
Continuous 2.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1) 5.0A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (TC = +25°C), PD175W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above +25°C 1.0W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (TC = +100°C), PD100W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, TJ–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, RthJC 1.0°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/8” from case, 5sec), TL+275°C. . . . . . . . . . . . . . . . . . . . . . .
Note 1. Pulse test: Pulse Width = 5ms, Duty Cycle ≤ 10%.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics (Note 2)
Collector–Emitter Sustaining Voltage VCEO(sus) IC = 100mA, IB = 0, Vclamp = 500V 500 – – V
VCEX(sus) IC = 2A, Vclamp = 500V, TC = +100°C 500 – – V
IC = 5A, Vclamp = 500V, TC = +100°C 375 – – V
Collector Cutoff Current ICEV VCEV = 700V, VBE(off) = 1.5V – – 0.25 mA
VCEV = 700V, VBE(off) = 1.5V, TC = +1 50°C– – 5.0 mA
ICER VCE= 700V, RBE= 50Ω, TC = +100°C– – 5.0 mA
Emitter Cutoff Current IEBO VEB = 2V, IC = 0 – – 175 mA
ON Characteristics (Note 3)
DC Current Gain hFE VCE = 5V, IC = 5A 40 –400
VCE = 5V, IC = 10A 30 –300
Collector–Emitter Saturation Voltage VCE(sat) IC = 10A, IB = 500mA – – 2.0 V
IC = 10A, IB = 500mA, TC = +100°C– – 2.5 V
IC = 20A, IB = 2A – – 3.5 V
Base–Emitter Saturation Voltage VBE(sat) IC = 10A, IB = 500mA – – 2.5 V
IC = 10A, IB = 500mA, TC = +100°C– – 2.5 V
Diode Forward Voltage VFIF = 5A, Note 3 –3 5 V
Dynamic Characteristics
Small–Signal Current Gain hfe VCE = 10V, IC = 1A, ftest = 1MHz 8– –
Output Capacitance Cob VCB = 50V, IE = 0, ftest = 100kHz 100 –325 pF
Switching Characteristics (Resistive Load)
Delay Time tdVCC = 250V, IC = 10A, IB1 = 500mA,
µ ≤
–0.12 0.25 µs
Rise Time trVBE(off) = 5V, tp = 50µs, Duty Cycle ≤ 2% –0.5 1.5 µs
Storage Time ts–0.8 2.0 µs
Fall Time tf–0.2 0.6 µs
Switching Characteristics (Inductive Load, Clamped)
Storage Time tsv IC = 10A Pe ak, V clamp = 250V,
°
–1.5 3.5 µs
Crossover Time tcIB1 = 500mA, VBE(off) = 5V, TC = +100°C–0.36 1.6 µs
Storage Time tsv IC = 10A Pe ak, V clamp = 250V,
°
–0.8 –µs
Crossover Time tcIB1 = 500mA, VBE(off) = 5V, TC = +25°C–0.18 –µs
Note 2. Pulse test: Pulse Width = 300µs, Duty Cycle ≤ 2%.
Note 3. The internal Collector–Emitter diode can eliminate the need for an external diode to clamp
inductive loads. Tests have shown that the Forward Recovery Voltage (VF) of this diode is
comparable to that of typical fast recovery rectifiers.
1.187 (30.16)
.875 (22.2)
Dia Max
.665
(16.9)
.430
(10.92)
Seating
Plane
.040 (1.02).312 (7.93) Min
.135 (3.45) Max
.350 (8.89)
Emitter
Collector/CaseBase
.215 (5.45)
.525 (13.35) R Max
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
B
C
E
