Semiconductor Group 1 Mar-04-1996
BAR 65-03W
Preliminary data
Silicon RF Switching Diode
• Low loss, low capacitance PIN-diode
• Band switch for TV-tuners
• Series diode for mobile communications
transmit-receive switch
Type Marking Ordering Code Pin Configuration Package
BAR 65-03WM/blue Q62702- 1 = C 2 = A SOD-323
Maximum Ratings
Parameter Symbol Values Unit
Diode reverse voltage
V
R 30 V
Forward current
I
F 100 mA
Operating temperature range
T
op - 55 ... + 125 °C
Storage temperature
T
stg - 55 ... + 150
Q62702-A1047
Semiconductor Group 2 Mar-04-1996
BAR 65-03W
Electrical Characteristics at
T
A=25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Reverse current
V
R = 20 V,
T
A = 25 °C
I
R- - 20 nA
Forward voltage
I
F = 100 mA
V
F- 0.93 1 V
AC characteristics
Diode capacitance
V
R = 1 V,
f
= 1 MHz
V
R = 3 V,
f
= 1 MHz
C
T
-
- 0.57
0.6 0.8
0.9 pF
Forward resistance
I
F = 5 mA,
f
= 100 MHz
I
F = 10 mA,
f
= 100 MHz
r
f
-
- 0.56
0.65 0.9
0.95 Ω
Series inductance
L
s- 1.8 - nH
Semiconductor Group Mar-04-1996 3
BAR 65-03W
Forward current
I
F =
f
(
V
F)
400 500 600 700 800 mV 1000
V
F
-1
10
0
10
1
10
2
10
3
10
mA
I
F
Forward resistance
r
f =
f
(
I
F)
f
= 100MHz
10 -1 10 0 mA
I
F
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
Ω
3.0
R
F
Diode capacitance
C
T
= f
(
V
R)
f
= 1MHz
012345678V10
V
R
0.2
0.3
0.4
0.5
0.6
0.7
0.8
pF
1.0
C
T
Diode capacitance
C
T
= f
(
V
R)
f
= 100MHz
012345678V10
V
R
0.2
0.3
0.4
0.5
0.6
0.7
0.8
pF
1.0
C
T
