FDD8447L-F085 N-Channel PowerTrench(R) MOSFET FDD8447L-F085 N-Channel PowerTrench(R) MOSFET 40V, 50A, 11.0m Features Applications Typ rDS(on) = 7.0m at VGS = 10V, ID = 14A Inverter Typ rDS(on) = 8.5m at VGS = 4.5V, ID = 11A Power Supplies Fast Switching Automotive Engine Control Qualified to AEC Q101 Power Train Management RoHS Compliant Solenoid and Motor Drivers Electronic Transmission Primary Switch for 12V and 24V Systems D D G S G D-PAK TO -252 (TO-252) (c)2009 Semiconductor Components Industries, LLC. September-2017, Rev. 1 S Publication Order Number: FDD8447L-F085/D Symbol VDSS Drain to Source Voltage VGS ID EAS PD Parameter Ratings 40 Units V Gate to Source Voltage 20 V Drain Current Continuous (TC < 80oC, VGS = 10V) 50 (Note 1) Pulsed A See Figure 4 Single Pulse Avalanche Energy (Note 2) 40 mJ Power Dissipation 65 W Dreate above 25oC 0.43 W/oC TJ, TSTG Operating and Storage Temperature o -55 to + 175 C Thermal Characteristics RJC Maximum Thermal Resistance Junction to Case 2.3 o C/W RJA Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 40 o C/W Package Marking and Ordering Information Device Marking FDD8447L Device FDD8447L-F085 Package D-PAK(TO-252) Reel Size 13'' Tape Width 12mm Quantity 2500 units Electrical Characteristics TC = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250A, VGS = 0V 40 - - V IDSS Zero Gate Voltage Drain Current VDS = 32V, VGS = 0V - - 1 A IGSS Gate to Source Leakage Current VGS = 20V, VGS = 0V - - 100 nA VGS = VDS, ID = 250A V On Characteristics VGS(th) rDS(on) gFS Gate to Source Threshold Voltage Drain to Source On Resistance Forward Transconductance 1.0 1.9 3.0 ID = 14A, VGS = 10V - 7.0 8.5 ID = 11A, VGS = 4.5V - 8.5 11.0 ID = 14A, VGS = 10V, TJ = 125C - 10.4 14.0 ID = 14A, VDS = 5V - 58 - VDS = 20V, VGS = 0V, f = 1MHz - 1970 - pF - 250 - pF pF m S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 150 - Rg Gate Resistance f = 1MHz - 1.27 - Qg(TOT) Total Gate Charge at 10V VGS = 0 to 10V - 37 52 nC Qg(5) Total Gate Charge at 5V VGS = 0 to 5V nC Qgs Gate to Source Gate Charge Qgd Gate to Drain "Miller" Charge VDD = 20V ID = 14A VGS = 10V www.onsemi.com 2 - 20 28 - 6 - nC - 7 - nC FDD8447L-F085 N-Channel PowerTrench(R) MOSFET MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units - 12 21 ns - 12 21 ns - 38 61 ns - 9 18 ns - 0.8 1.2 V - 22 29 ns - 11 14 nC Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time VDD = 20 V, ID = 1 A, VGS = 10 V, RGEN = 6 Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 14A IF = 14A, dISD/dt = 100A/s Notes: 1: Starting TJ = 25oC to 175oC. 2: Starting TJ = 25oC, L = 0.05mH, IAS = 40A www.onsemi.com 3 FDD8447L-F085 N-Channel PowerTrench(R) MOSFET Electrical Characteristics TC = 25oC unless otherwise noted 70 1.0 60 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 2 VGS = 10V 40 30 20 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 Figure 2. Maximum Continuous Drain Current vs Case Temperature DUTY CYCLE - DESCENDING ORDER 1 NORMALIZED THERMAL IMPEDANCE, ZJC 50 175 Figure 1. Normalized Power Dissipation vs Case Temperature CURRENT LIMITED BY PACKAGE D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TC 0.001 -5 10 SINGLE PULSE -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 Figure 3. Normalized Maximum Transient Thermal Impedance 1000 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION IDM, PEAK CURRENT (A) VGS = 10V TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 175 - TC I = I2 150 100 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability www.onsemi.com 4 1 10 FDD8447L-F085 N-Channel PowerTrench(R) MOSFET Typical Characteristics 400 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 1000 100 100 100us 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 SINGLE PULSE TJ = MAX RATED TC = 25oC 0.1 1 1ms 10ms DC 10 VDS, DRAIN TO SOURCE VOLTAGE (V) STARTING TJ = 25oC 10 STARTING TJ = 150oC 1 0.001 100 Figure 5. Forward Bias Safe Operating Area 80 VDD = 5V 60 40 TJ = 175oC TJ = -55oC 20 0.1 1 10 100 Figure 6. Unclamped Inductive Switching Capability ID, DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 0.01 tAV, TIME IN AVALANCHE (ms) 100 100 ID, DRAIN CURRENT (A) If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 80 VGS = 10V VGS = 6V 60 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 5V VGS = 4.5V VGS = 3.5V VGS = 4V 40 VGS = 3V 20 o TJ = 25 C 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS, GATE TO SOURCE VOLTAGE (V) 0 0.0 4.5 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m) 40 ID = 14A PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 30 20 o TJ = 175 C 10 TJ = 25oC 0 2 4 6 2.5 Figure 8. Saturation Characteristics 8 10 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure 7. Transfer Characteristics 0.5 1.0 1.5 2.0 VDS, DRAIN TO SOURCE VOLTAGE (V) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -80 VGS, GATE TO SOURCE VOLTAGE (V) Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX ID = 14A VGS = 10V -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature www.onsemi.com 5 FDD8447L-F085 N-Channel PowerTrench(R) MOSFET Typical Characteristics 1.15 1.2 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = VDS ID = 250A 1.0 0.8 0.6 0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 4000 CAPACITANCE (pF) Ciss 1000 Coss f = 1MHz VGS = 0V 100 0.1 Crss 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 80 Figure 13. Capacitance vs Drain to Source Voltage ID = 1mA 1.10 1.05 1.00 0.95 0.90 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature VGS, GATE TO SOURCE VOLTAGE(V) NORMALIZED GATE THRESHOLD VOLTAGE 1.4 10 ID = 14A 8 VDD = 10V VDD = 20V 6 VDD = 30V 4 2 0 0 8 16 24 Qg, GATE CHARGE(nC) 32 40 Figure 14. Gate Charge vs Gate to Source Voltage www.onsemi.com 6 FDD8447L-F085 N-Channel PowerTrench(R) MOSFET Typical Characteristics ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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