FDD8447L-F085 N-Channel PowerTrench® MOSFET
©2009 Semiconductor Components Industries, LLC.
September-2017, Rev. 1
Publication Order Number:
FDD8447L-F085/D
FDD8447L-F085
N-Channel PowerTrench® MOSFET
40V, 50A, 11.0mΩ
Features
Typ rDS(on) = 7.0mΩ at VGS = 10V, ID = 14A
Typ rDS(on) = 8.5mΩ at VGS = 4.5V, ID = 11A
Fast Switching
Qualified to AEC Q101
RoHS Compliant
Applications
Inverter
Power Supplies
Automotive Engine Control
Power Train Management
Solenoid and Motor Drivers
Electronic Transmission
Primary Switch for 12V and 24V Systems
G
S
D
TO-252
D-PAK
(
TO-252
)
D
G
S
FDD8447L-F085 N-Channel PowerTrench® MOSFET
www.onsemi.com
2
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Thermal Characteristics
Symbol Parameter Ratings Units
VDSS Drain to Source Voltage (Note 1) 40 V
VGS Gate to Source Voltage ±20 V
ID
Drain Current Continuous (TC < 80oC, VGS = 10V) 50 A
Pulsed See Figure 4
EAS Single Pulse Avalanche Energy (Note 2) 40 mJ
PD
Power Dissipation 65 W
Dreate above 25oC0.43W/
oC
TJ, TSTG Operating and Storage Temperature -55 to + 175 oC
RθJC Maximum Thermal Resistance Junction to Case 2.3 oC/W
RθJA Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 40 oC/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDD8447L FDD8447L-F085 D-PAK(TO-252) 13’’ 12mm 2500 units
Electrical Characteristics TC = 25°C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 40 - - V
IDSS Zero Gate Voltage Drain Current VDS = 32V, VGS = 0V - - 1 µA
IGSS Gate to Source Leakage Current VGS = ±20V, VGS = 0V - - ±100 nA
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.0 1.9 3.0 V
rDS(on) Drain to Source On Resistance
ID = 14A, VGS = 10V - 7.0 8.5
mΩID = 11A, VGS = 4.5V - 8.5 11.0
ID = 14A, VGS = 10V, TJ = 125°C - 10.4 14.0
gFS Forward Transconductance ID = 14A, VDS = 5V - 58 - S
Ciss Input Capacitance VDS = 20V, VGS = 0V,
f = 1MHz
- 1970 - pF
Coss Output Capacitance - 250 - pF
Crss Reverse Transfer Capacitance - 150 - pF
RgGate Resistance f = 1MHz - 1.27 - Ω
Qg(TOT) Total Gate Charge at 10V VGS = 0 to 10V
VDD = 20V
ID = 14A
VGS = 10V
-3752nC
Qg(5) Total Gate Charge at 5V VGS = 0 to 5V - 20 28 nC
Qgs Gate to Source Gate Charge -6-nC
Qgd Gate to Drain “Miller“ Charge - 7 - nC
FDD8447L-F085 N-Channel PowerTrench® MOSFET
Electrical Characteristics TC = 25oC unless otherwise noted
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1: Starting TJ = 25oC to 175oC.
2: Starting TJ = 25oC, L = 0.05mH, IAS = 40A
Symbol Parameter Test Conditions Min Typ Max Units
td(on) Turn-On Delay Time
VDD = 20 V, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω
-1221ns
trRise Time - 12 21 ns
td(off) Turn-Off Delay Time - 38 61 ns
tfFall Time - 9 18 ns
VSD Source to Drain Diode Voltage ISD = 14A - 0.8 1.2 V
trr Reverse Recovery Time IF = 14A, dISD/dt = 100A/µs-2229ns
Qrr Reverse Recovery Charge - 11 14 nC
www.onsemi.com
3
FDD8447L-F085 N-Channel PowerTrench® MOSFET
Typical Characteristics
Figure 1. Normalized Power Dissipation vs Case
Temperature
0 25 50 75 100 125 150 175
0.0
0.2
0.4
0.6
0.8
1.0
1.2
POWER DISSIPATION MULTIPLIER
TC, CASE TEMPERATURE(oC)
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
25 50 75 100 125 150 175
0
10
20
30
40
50
60
70
CURRENT LIMITED
BY PACKAGE
V
GS
= 10V
ID, DRAIN CURRENT (A)
TC, CASE TEMPERATURE
(
oC
)
Figure 3.
10
-5
10
-4
10
-3
10
-2
10
-1
110
0.001
0.01
0.1
1
SINGLE PULSE
D = 0.50
0.20
0.10
0.05
0.02
0.01
NORMALIZED THERMAL
IMPEDANCE, Z
θ
JC
t
,
RECTANGULAR PULSE DURATION
(
s
)
DUTY CYCLE - DESCENDING ORDER
2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TC
PDM
t1
t2
Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
10
-5
10
-4
10
-3
10
-2
10
-1
110
10
100
1000
V
GS
= 10V
SINGLE PULSE
I
DM
, PEAK CURRENT (A)
t, RECTANGULAR PULSE DURATION(s)
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
T
C
= 25
o
C
I = I
2
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
www.onsemi.com
4
FDD8447L-F085 N-Channel PowerTrench® MOSFET
Figure 5.
110100
0.1
1
10
100
1000
100us
1ms
10ms
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
SINGLE PULSE
TJ = MAX RATED
T
C
= 25oC
DC
Forward Bias Safe Operating Area
0.001 0.01 0.1 1 10 100
1
10
100
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
I
AS
, AVALANCHE CURRENT (A)
t
AV
, TIME IN AVALANCHE (ms)
400
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
Figure 6. Unclamped Inductive Switching
Capability
Figure 7.
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
0
20
40
60
80
100
T
J
= -55oC
T
J
= 25oC
T
J
= 175oC
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
VDD = 5V
I
D
, DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Transfer Characteristics Figure 8.
0.00.51.01.52.02.5
0
20
40
60
80
100
V
GS
= 5V
V
GS
= 4.5V V
GS
= 3.5V
V
GS
= 10V
V
GS
= 6V
V
GS
= 3V
V
GS
= 4V
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Saturation Characteristics
Figure 9.
246810
0
10
20
30
40
I
D =
14A PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
r
DS(on)
, DRAIN TO SOURCE
ON-RESISTANCE
(
m
Ω)
V
GS
, GATE TO SOURCE VOLTAGE
(
V
)
T
J
= 25
o
C
T
J
= 175
o
C
Drain to Source On-Resistance
Variation vs Gate to Source Voltage
Figure 10.
-80 -40 0 40 80 120 160 200
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
I
D
= 14A
V
GS
= 10V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TEMPERATURE(
o
C)
Normalized Drain to Source On
Resistance vs Junction Temperature
Typical Characteristics
www.onsemi.com
5
FDD8447L-F085 N-Channel PowerTrench® MOSFET
Figure 11.
-80 -40 0 40 80 120 160 200
0.4
0.6
0.8
1.0
1.2
1.4
V
GS = VDS
ID
= 250
µ
A
NORMALIZED GATE
THRESHOLD VOLTAGE
T
J
, JUNCTION TEMPERATURE
(
o
C
)
Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
-80 -40 0 40 80 120 160 200
0.90
0.95
1.00
1.05
1.10
1.15
I
D
= 1mA
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
T
J
, JUNCTION TEMPERATURE (
o
C)
Figure 13.
0.1 1 10 80
100
1000
f = 1MHz
V
GS
= 0V C
rss
C
oss
C
iss
CAPACITANCE (pF)
V
DS
, DRAIN TO SOURCE VOLTAGE
(
V
)
4000
Capacitance vs Drain to Source
Voltage
Figure 14.
0 8 16 24 32 40
0
2
4
6
8
10
I
D
= 14A
V
DD
= 30V
V
DD
= 10V
V
DD
= 20V
Q
g
, GATE CHARGE(nC)
V
GS
, GATE TO SOURCE VOLTAGE(V)
Gate Charge vs Gate to Source Voltage
Typical Characteristics
www.onsemi.com
6
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
❖
