MOSPOWER Cross. Reference List (Contd) INTERSIL (Cont'd) Industry BVpss DS(on) Siliconix BVpss DS(on) Part No. (Volts) (Ohms) Package Equivalent (Volts) (Ohms) IVN6100TNU 500 15.0 TO-39 IVN6200CND 40 0.35 TO-220 VNO401D 40 0.15 IVN6200CNE 60 0.25 TO-220 IRF533 60 0.25 IVN6200CNF 80 0.25 TO-220 VNO801D 80 0.25 IVN6200CNH 100 0.25 TO-220 VN1001D 100 0.25 IVN6200CNM 200 0.5 TO-220 IRF630 200 0.4 IVN6200GNP 250 05 TO-220 IVN6200CGNR 395 25 TO-220 VN4001D 400 1.5 IVN6200CNS 400 15 TO-220 VN4001D 400 15 IVN6200CNT 450 1.5 TO-220 VN4501D 450 15 IVN6200CNU 500 2.0 TO-220 VN5001D 500 15 IVN6200KND 40 0.25 TO-3 VNO401A 40 0.15 IVN6200KNE 60 0.25 TO-3 IRF133 60 0.25 IVN6200KNF 80 0.25 TO-3 VNO801A 80 0.25 IVN6200KNH 100 0.25 TO-3 VN1001A 100 0.25 IVN6200KNM 200 05 TO-3 IRF230 200 0.4 IVN6200KNP 250 0.5 TO-3 IVN6200KNS 400 1.5 TO-3 VN4001A 400 1.5 IVN6200KNT 450 15 TO-3 VNABO1A 450 15 IVN6200KNU 500 2.0 TO-3 VN5000A 500 15 IVN6300ANE 60 75 TO-237 VN2222LM 60 75 IVN6300ANF 80 75 10-237 IVN6300ANH 100 75 TO-237 = = IVN6300ANM 200 25.0 TO-237 VN2410M 240 10.0 IVN6300ANP 250 25.0 TO-237 VN2410M 240 10.0 IVN6300ANS 400 75.0 TO-237 ~ IVN6300ANT 450 75.0 10-237 ~ ~ IVN6300ANU 500 75.0 TO-237 IVN6300SNE 60 75 TO-52 VN1OLE 60 5.0 IVN6300SNF 80 75 TO-52 ~ IVN6300SNH 100 75 TO-52 _ IVN6300SNM 200 25.0 TO-52 _ IVN6300SNP 250 25.0 TO-52 - _ IVN6300SNS 400 75.0 TO-52 IVN6300SNT 450 75.0 TO-52 _~ _ _ IVN6300SNU 500 75.0 TO-52 _ MOTOROLA MTM1NQ5 950 10.0 TO-3 _ _ MTM1N100 1000 10.0 T0-3 MTM2N45 450 4.0 TO-3 IRF423 450 4.0 MTM2N50 500 4.0 TO-3 IRF 422 500 4.0 MTM2N85 850 8.0 10-3 me . MTM2N90 900 8.0 TO-3 = MTM3N35 350 3.3 TO-3 IRF323 350 25 MTM3N40 400 3.3 TO-3 IRF 322 400 25 MTM3N55 550 25 TO-3 MTM3N60 600 2.5 TO-3 MTM4N45 450 2.0 TO-3 VN4502A 450 2.0 MTM4N50 500 2.0 TO-3 VN5002A 500 20 MTM5N35 350 1.5 TO-3 VN3501A 350 15 MTM5N40 400 15 TO-3 VN4001A 400 15 MTM6N55 550 15 TO-3 _ = MTM6N60 600 15 TO-3 ~ MTM7N45 450 12 TO-3 IRF443 450 tA MTM7N50 500 1.2 TO-3 IRF442 500 11 MTM8N12 120 0.5 TO-3 MTM8N15 150 0.5 TO-3 ~ MTM8N18 180 0.4 TO-3 - ~ MTM8N20 200 0.4 TO-3 _ = MTM8N35 350 0.8 TO-3 IRF343 350 0.8 MTM8N40 400 08 TO-3 IRF 342 400 0.8 MTM10N08 80 0.33 TO-3 IRF 120 100 0.3 MTM10N10 100 0.33 TO-3 IRF 120 100 0.3 MTM10N12 120 0.3 TO-3 MTM10N15 150 0.3 TO-3 MTM12NO05 50 0.2 TO-3. VNOB01A 60 0.15 MTM12N06 60 0.2 TO-3 VNO601A 60 0.15 MTM12N08 80 0.25 TO-3 VNO801A 80 0.25 MTM12N10 100 0.25 TO-3 VN1001A 100 0.25 Siliconix 1-17 jSI] SOUSGIOJOY SSOID YIMOdSOWMOSPOWER Selector Guide *200C Rating MOSPOWER Selector Guide = Sse" N-Channel MOSPOWER Breakdown Ip Power Device Voltage (Bolon Continuous Dissipation Part (Volts) (Ohms (Amps) (Watts) Number 500 0.4 13.0 150 IRF450 500 0.5 12.0 150 IRF452 500 0.85 8.0 125 IRF440 500 1.10 7.0 125 IRF442 500 1.5 6.5 175 VNPO002A* 500 1.5 45 100 VN5001A 500 1.5 45 75 IRF430 500 2.0 4.0 100 VN5002A 500 2.0 4.0 75 IRF432 500 3.0 2.5 40 {RF420 500 4.0 2.0 40 IRF422 450 0.4 13.0 150 IRF461 450 0.5 12.0 150 IRF453 450 0.85 8.0 125 IRF441 450 1.10 7.0 125 IRF443 450 1.5 6.5 175 VNNOO2A* 450 1.5 45 100 VN4501A 450 1.5 45 75 IRF431 450 2.0 40 100 VN4502A 450 2.0 4.0 75 IRF433 450 3.0 2.5 40 IRF421 450 4.0 2.0 40 IRF423 400 0.3 15.0 150 IRF350 400 0.4 13.0 150 IRF352 400 0.55 10.0 125 (RF340 400 0.80 8.0 125 IRF342 400 1.0 8.0 175 VNMO01A* 400 1.0 6.0 125 VN4000A 400 1.0 5.5 76 IRF330 400 1.5 5.0 125 VN4001A 400 1.5 45 75 IRF332 e 400 1.8 3.0 40 IRF320 400 2.5 2.5 40 IRF322 eS 350 0.3 15.0 150 IRF351 350 0.4 13.0 150 IRF353 350 0.55 10.0 125 (RF341 TO-3 350 0.80 8.0 125 IRF343 350 1.0 8.0 175 VNLOO01A* 350 1.0 6.0 125 VN3500A 350 1.0 5.5 75 IRF331 350 1.5 5.0 125 VN3501A 350 1.5 45 75 IRF333 350 1.8 3.0 40 IRF321 350 2.5 2.5 40 IRF323 200 0.085 30.0 150 IRF250 200 0.12 25.0 150 IRF252 200 0.18 18.0 125 IRF240 200 0.22 16.0 125 IRF242 200 0.4 9.0 75 {RF230 200 0.6 8.0 75 IRF232 200 0.8 5.0 40 IRF220 200 1.2 4.0 40 IRF222 150 0.085 30.0 150 IRF251 150 0.12 25.0 150 IRF253 150 0.18 18.0 125 IRF241 150 0.22 16.0 125 IRF243 150 0.4 9.0 75 IRF231 150 0.6 8.0 75 IRF233 150 0.8 5.0 40 IRF221 150 1.2 4.0 40 IRF223 120 0.18 14.0 75 VN1200A 120 0.25 12.0 100 VN1201A 1-4 SiliconixIRF420 = IRF424 IRF422 = IRF423 Ss IRF820 = IRF824 = IRF822 IRF823 Siliconix Advanced Information 5OOV) -Channel Enhancement Mode These power FETs are designed especially for off-line switching regulators, converters, solenoid and relay drivers. Product Summary FEATURES Neate er BVoss | Rosion) Ip Package ws High Voltage IRF420 S00V , 32 2.54 No Second Breakdown IRF421 450V 103 a High Input Impedance IRF422 500V 40 20A g Internal Drain-Source Diode IRF423 450V _w Very Rugged: Excellent SOA iRFB20 500V 30 3 6A as Extremely Fast Switching IRF821 | 450V " T0.220A8 IRF822 500V f _ BENEFITS . TAFezS TOV 40 2.0A u Reduced Component Count a Improved Performance o a Simpler Designs te eps G a Improved Reliability at s ABSOLUTE MAXIMUM RATINGS (Tc = 25C unless otherwise noted) Drain-Source Voltage Drain Current IRF420, 422 0... cece eee c cece cece eee n ene nee eee e eee ee 500V Pulsed (80s to 300us, 1% duty cycle)-......eeeeeeeeee +10A IRF820, 822 IRF421, 423 oeeceeeeccecceeceueeeceucesenseesenecaes A50V Gate Current (Peak) oo... c cece cece cere cece tener eens t1A IRF821, 823 Gate-Source Voltage -+-1--s rere eee eer erene tere ereeerenes + 40V Drain-Gate Voltage Total Power Dissipation ........00cciccceeasceseeesesenenens 40W IRFA20, 422 vee b eee e ee ne ene senate nae seneeennenene 500V Linger Derating Factor .s+esse+letesesesete 0.32 W/C VRF421, 423 i ccc cece cence tere ete e een ee tes 450V Operating and Storage IRF821, 823 Temperature oo... . seer eee teeters -55C to + 150C - Drain Current Continuous IRF420, 421.0. e ee cee een teen teens +2.5A IRF422, 423.000... ec eect e reece cnet tte e ones +2.0A PACKAGE DIMENSIONS 875 0.450 . (77.43) 20 (0.51) 23 p22 225) ~ (6.35) BSS (1.39) = oe 208 S35 x $ TWrvne ne TT 0.043 (7.092) SEATING aT e036 rege) | ane be - 890 1279 PLANE 7 Dae pales 4.09) a er) 0.675. 7. 145) [a7 (29.896) or ee (6.355 0.655 (16.637) 1 EN hs 4 m8 oaao (71.176) Ln {2 \ We tan | (+ 4 0420 (70.668) Ye N 1 a | 1 | t ~~] / 0.161 (4.089) : O45 (1.15) 0226 rs715h O181 (3.835) Ge (0:207) aoscom view 13385) MAX a | PIN 1 Gate TO-3 PIN 1 Gate TO-220AB PIN 2 Source PIN 2 & TAB Drain CASE Drain PIN 3 Source 2-26 SiliconixELECTRICAL CHARACTERISTICS (Tc =25C unless otherwise noted) Part : Parameter Number Min Typ Max Unit Test Conditions Static IRF 420, 820 500 Drain-Source Breakdown tRF422, 822 . BV, : - 4 Veg = 0,-Ip = 250 DSS Voltage IRF421, 821 | 400 Vv es D pA IRF 423, 823 Vast) Gate Threshold Voltage All 2.0 3.3 4.0 Vv Vos = Ves; p= 1 mA \ess Gate-Body Leakage All 10 +100 nA Veg = + 20V, Vos =0 Zero Gate Voltage Drain : / 0.4 0.25 Vpg = 0.8 Rated Vig Vag = 0 loss Current All mA _ g oe u 0.2 1.0 Vpg = Rated Vos, Vag = 0, Ty = 125C Ipjon) +: ON-State Drain Current All 2.5 A Vps = 25V, Vgs = 10V (Note 1) IRF 420, 820 25 3.0 Static Drain-Source On-State IRF 421, 821 . . : . Toston) Resistance TAF4D2, 822 2 | Vag = 10V, Ip = 1A (Note 1) IRF423, 823 3.0 | 40 : Dynamic Dts Forward Transconductance All 1.0 1.75 S |'Vpg = 25V, Ip = 1A (Note 1) Ciss Input Capacitance 300 400 Coss Output Capacitance All | 75 150 pF Ves = 0, Vog = 25V, f= 1 MHz Ciss Reverse Transfer Capacitance 20 40 taon) Turn-On Delay Time All 30 60 t, Rise Time All 25 50 Vop= 250V, Ip *1A, R, = 2400, R, = 50Q, ns 9 taoty Turn-Off Delay Time All 30 60 Veg = 10V (Fig. 1) tr Fall Time . All. 15 | 30 . . ' Drain-Source Diode Characteristics Vep Forward On Voltage Alt -1.0 v ls =-2.5A Veg = 0 (Note 1) ter Reverse Recovery Time All 200 ns |lp=2.5A, Veg =0, di/dt = 100A/us (Fig. 2) Note 1: Pulse test 80 xs to 300 us, 1% duty cycle FIGURE 1 Switching Test Circuit FIGURE 2 JEDEC Reverse Recovery Circult y WV DD 50Q di/dt Adjust (1-27 UH) : | . = STO 50uF I / , | IN4933 # _ (pKyAdjust , Rgen | wt L l ~ Lie | | | | yeton IN4001 20v + | 1 | T | 4000UF = 2 >i | J | I j | CIRCUIT = | R< 0.252 PULSE UNDER - L $0.01uH [generator] [TEST a = PW. = Tus Cg < 50 pF +4 > id AA DUTY CYCLE = 1% | A IN4723 2N4204 SCOPE 3 FROM TRIGGER CKT Siliconix 2-27 ceddl = 72esal = b7Ssal = OSI cysdl = Ccovsdl = bovsdl = Odsal