INSULATED GATE BIPOLAR TRANSISTOR
VCES = 600V
IC = 24A, TC = 100°C
tSC 5μs, TJ(max) = 175°C
VCE(on) typ. = 1.65V
Features
• Low VCE (ON) Trench IGBT Technology
• Low switching losses
• Maximum Junction temperature 175 °C
•5 μS short circuit SOA
• Square RBSOA
• 100% of the parts tested for ILM
• Positive VCE (ON) Temperature co-efficient
• Tight parameter distribution
• Lead Free Package
Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
Low VCE (ON) and Low Switching losses
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
G
C
E
Gate Collector Emitter
IRGP4062-EPbF
www.irf.com © 2012 International Rectifier October 10, 2012
1
TO-247AD
C
GCE
E
C
G
n-channel
Form Quantity
IRGP4062-EPbF TO-247AD Tube 25 IRGP4062-EPbF
Base part number Package Type Standard Pack Orderable part number
Absolute Maximum Ratings
Parameter Max. Units
V
CES
Collector-to-Emitter Voltage 600 V
I
C
@ T
C
= 25°C Continuous Collector Current 48
I
C
@ T
C
= 100°C Continuous Collector Current 24
I
CM
Pulse Collector Current, V
GE
= 15V 72
I
LM
Clamped Inductive Load Current, V
GE
= 20V
c
96 A
V
GE
Continuous Gate-to-Emitter Voltage ±20 V
Transient Gate-to-Emitter Voltage ±30
P
D
@ T
C
= 25°C Maximum Power Dissipation 250 W
P
D
@ T
C
= 100°C Maximum Power Dissipation 125
T
J
Operating Junction and -55 to +175
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
JC
Thermal Resistance Junction-to-Case ––– ––– 0.65 °C/W
R
CS
Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.50 –––
R
JA
Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– ––– 40
IRGP4062-EPbF
www.irf.com © 2012 International Rectifier October 10, 2012
2
Notes:
VCC = 80% (VCES), VGE = 20V, L = 100μH, RG = 10
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Turn-on energy is measured using the same co-pak diode as IRGP4062DPbF.
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(B R)CES
Collector-to-E mitter B reakdown Vol t age
600 — — V VGE = 0V, IC = 100μA
d
V(B R)CE S/
TJT emper at ur e Coef f . of B r eak down Vol t age —0.30—V/°CV
GE = 0V, IC = 1mA (25°C-175°C)
—1.601.95 I
C = 24A, VGE = 15V, TJ = 25°C
VCE(on) Collector-to-Emitter Saturation Voltage — 2.03 — V IC = 24A, VGE = 15V, TJ = 150°C
—2.04— I
C = 24A, VGE = 15V, TJ = 175°C
VGE(th) Gate Threshold Voltage 4.0 — 6.5 V VCE = VGE , IC = 700μA
VGE ( t h) /
TJ Threshold Voltage temp. coefficient — -18 —
mV/°C
VCE = VGE , IC = 1.0mA (25°C - 175°C)
gfe Forward Transconductance — 17 — S VCE = 50V, IC = 24A, PW = 80μs
ICES Collector-to-Emitter Leakage Current — 2.0 25 μAV
GE = 0V, VCE = 600V
— 775 — VGE = 0V, VCE = 600V, TJ = 175°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
QgTotal Gate Charge (turn-on) — 50 75 IC = 24A
Qge Gate-to-Emitter Charge (turn-on) — 13 20 nC VGE = 15V
Qgc Gate-to-Collector Charge (turn-on) — 21 31 VCC = 400V
Eon Turn-On Switching Loss
e
— 115 201 IC = 24A, VCC = 400V, VGE = 15V
Eoff Turn-Off Switching Loss — 600 700 μJR
G = 10, L = 200μH, LS = 150nH, TJ = 25°C
Etotal Total Switching Loss — 715 901 Energy loss es include tail & diode revers e recovery
td(on) Turn-On delay time — 41 53 IC = 24A, VCC = 400V, VGE = 15V
trRise time — 22 31 ns RG = 10, L = 200μH, LS = 150nH, TJ = 25°C
td(off) Turn-Off delay time — 104 115
tfFall time — 29 41
Eon Turn-On Switching Loss
e
— 420 — IC = 24A, VCC = 400V, VGE =15V
Eoff Turn-Off Switching Loss — 840 — μJR
G=10, L= 200μH, LS=150nH, TJ = 175°C
Etotal Total Switching Loss — 1260 — Energy loss es include tail & diode revers e recovery
td(on) Turn-On delay time — 40 — IC = 24A, VCC = 400V, VGE = 15V
trRise time — 24 — ns RG = 10, L = 200μH, LS = 150nH
td(off) Turn-Off delay time — 125 — TJ = 175°C
tfFall time — 39 —
Cies Input Capacitance — 1490 — pF VGE = 0V
Coes Output Capacitance — 129 — VCC = 30V
Cres Reverse Transfer Capacitance — 45 — f = 1.0Mhz
TJ = 175°C, IC = 96A
RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp =600V
Rg = 10, VGE = +20V to 0V
SCSOA Short Circuit Safe Operating Area 5 — — μsV
CC = 400V, Vp =600V
Rg = 10, VGE = +15V to 0V
Conditions
IRGP4062-EPbF
www.irf.com © 2012 International Rectifier October 10, 20123
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case
Temperature
Fig. 3 - Forward SOA
TC = 25°C, TJ 175°C; VGE =15V
Fig. 4 - Reverse Bias SOA
TJ = 175°C; VGE =20V
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80μs
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80μs
020 40 60 80 100 120 140 160 180
TC (°C)
0
5
10
15
20
25
30
35
40
45
50
IC (A)
0 20 40 60 80 100 120 140 160 180
TC (°C)
0
50
100
150
200
250
300
Ptot (W)
10 100 1000
VCE (V)
1
10
100
1000
IC (A)
0 1 2 3 4 5 6 7 8
VCE (V)
0
10
20
30
40
50
60
70
80
90
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0 1 2 3 4 5 6 7 8
VCE (V)
0
10
20
30
40
50
60
70
80
90
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
1 10 100 1000 10000
VCE (V)
0.1
1
10
100
1000
IC (A)
1msec
10μsec
100μsec
Tc = 25°C
Tj = 175°C
Single Pulse
DC
IRGP4062-EPbF
www.irf.com © 2012 International Rectifier October 10, 2012
4
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 80μs
012345678
VCE (V)
0
10
20
30
40
50
60
70
80
90
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
Fig. 8 - Typical VCE vs. VGE
TJ = -40°C
5 101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 12A
ICE = 24A
ICE = 48A
Fig. 9 - Typical VCE vs. VGE
TJ = 25°C
5 101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 12A
ICE = 24A
ICE = 48A
Fig. 10 - Typical VCE vs. VGE
TJ = 175°C
5 101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 12A
ICE = 24A
ICE = 48A
Fig. 11 - Typ. Transfer Characteristics
VCE = 50V; tp = 10μs
0 5 10 15
VGE (V)
0
20
40
60
80
100
120
ICE (A)
TJ = 25°C
TJ = 175°C
Fig. 12 - VGE vs. Short Circuit Time
VCC = 400V; TC = 25°C
8 1012141618
VGE (V)
4
6
8
10
12
14
16
Time (μs)
40
80
120
160
200
240
280
Current (A)
IRGP4062-EPbF
www.irf.com © 2012 International Rectifier October 10, 20125
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200μH; VCE = 400V, ICE = 24A; VGE = 15V
Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 200μH; VCE = 400V, ICE = 24A; VGE = 15V
025 50 75 100 125
RG ()
10
100
1000
Swiching Time (ns)
tR
tdOFF
tF
tdON
0 25 50 75 100 125
Rg ()
0
200
400
600
800
1000
1200
1400
1600
Energy (μJ)
E
OFF
EON
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10; VGE = 15V
0 102030405060
IC (A)
0
200
400
600
800
1000
1200
1400
1600
1800
Energy (μJ)
EOFF
EON
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10; VGE = 15V
10 20 30 40 50
IC (A)
1
10
100
1000
Swiching Time (ns)
tR
tdOFF
tF
tdON
Fig. 17 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
Fig. 18 - Typical Gate Charge vs. VGE
ICE = 24A; L = 600μH
020 40 60 80 100
VCE (V)
10
100
1000
10000
Capacitance (pF)
Cies
Coes
Cres
0 5 10 15 20 25 30 35 40 45 50 55
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VGE, Gate-to-Emitter Voltage (V)
VCES
= 300V
VCES
= 400V
IRGP4062-EPbF
www.irf.com © 2012 International Rectifier October 10, 2012
6
Fig. 19 Maximum Transient Thermal Impedance, Junction-to-Case
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) i (sec)
0.2782 0.000311
0.3715 0.006347
J
J
1
1
2
2
R1
R1R2
R2
C
Ci= iRi
IRGP4062-EPbF
www.irf.com © 2012 International Rectifier October 10, 20127
1K
VC C
DUT
0
L
L
Rg
80 V DUT
480V
L
Rg
VCC
diode clamp /
DUT
DUT /
DRIVER
- 5V
Rg
VCC
DUT
R =
V
CC
I
CM
Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit
Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit
Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - BVCES Filter Circuit
DC
4x
DUT
360V
VCC
IRGP4062-EPbF
www.irf.com © 2012 International Rectifier October 10, 2012
8
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF3 - Typ. S.C. Waveform
@ TJ = 25°C using Fig. CT.3
-100
0
100
200
300
400
500
600
-5.00 0.00 5.00 10.00
time (µS )
V
CE
(V )
-50
0
50
100
150
200
250
300
I
CE
(A)
V
CE
I
CE
-100
0
100
200
300
400
500
600
-0.40 0.10 0.60
Time(µs)
V
CE
(V)
-5
0
5
10
15
20
25
30
EOFF Loss
5% VCE
5% ICE
90% ICE
tf
VCE
C
ICE
-100
0
100
200
300
400
500
600
11.70 11.90 12.10 12.30
Time (µs)
V
CE
(V)
-10
0
10
20
30
40
50
60
EON
ICE
C
90% test
10% ICE
5% VCE
tr
VCE
C
IRGP4062-EPbF
www.irf.com © 2012 International Rectifier October 10, 20129
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
TO-247AD Part Marking Information
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
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IRGP4062-EPbF
www.irf.com © 2012 International Rectifier October 10, 2012
10
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
Qualification Information
†
Moisture Sensitivity Level TO-247AD N/A
(per JEDEC J-STD-020D)
ESD
(per AEC-Q101-001)
Class C5(+/- 2000V )
(per AEC-Q101-005)
Machine Model
Human Body Model
Charged Device Model
Qualification Level Industrial
(per International Rectifier’s internal
guidelines)
RoHS Compliant Yes
Class M4 (+/- 700V )
(per AEC-Q101-002)
Class H1C (+/- 2000V )